FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V - 8V). * -13.5 A, -20 V. RDS(ON) = 8.5 m @ VGS = -4.5 V RDS(ON) = 10.5 m @ VGS = -2.5 V RDS(ON) = 14 m @ VGS = -1.8 V * Fast switching speed Applications * High performance trench technology for extremely low RDS(ON) * Power management * Load switch * High current and power handling capability * Battery protection DD DD DD DD G SS G S SS S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Drain-Source Voltage Ratings -20 Units VDSS Parameter VGSS Gate-Source Voltage ID Drain Current - Continuous 8 (Note 1a) -13.5 -50 A (Note 1a) 2.5 W (Note 1b) 1.5 (Note 1c) 1.2 - Pulsed Power Dissipation for Single Operation PD TJ, TSTG V V Operating and Storage Junction Temperature Range -55 to +175 C Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W RJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 25 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4465 FDS4465 13'' 12mm 2500 units 2000 Fairchild Semiconductor International FDS4465 Rev B(W) FDS4465 October 2000 PRELIMINARY Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS ===TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 0 V -1 A IGSSF Gate-Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA -1.5 V On Characteristics -20 V -12 mV/C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A VGS(th) ===TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 A, Referenced to 25C 3 VGS = -4.5 V, ID = -13.5 A ID = -12 A VGS = -2.5 V, ID = -10.5 A VGS = -1.8 V, VGS=-4.5 V, ID =-13.5A, TJ=125C 6.7 8.0 9.8 9.0 ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -13.5 A VDS = -10 V, f = 1.0 MHz V GS = 0 V, -0.4 -0.6 mV/C 8.5 10.5 14 13 -50 m A 70 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics 8237 pF 1497 pF 750 pF (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time 140 224 ns Qg Total Gate Charge 86 120 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -10V, VGS = -4.5 V, VDS = -10 V, VGS = -4.5 V ID = -1 A, RGEN = 6 ID = -13.5 A, 20 36 ns 24 38 ns 300 480 ns 20 nC 11 nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -2.1 A Voltage (Note 2) -0.6 -2.1 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50 C/W when mounted on a 1in2 pad of 2 oz copper b) 105 C/W when mounted on a .04 in2 pad of 2 oz copper c) 125 C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS4465 Rev B(W) FDS4465 Electrical Characteristics FDS4465 Typical Characteristics 50 3 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -ID, DRAIN CURRENT (A) -2.0V 40 -2.5V -1.5V -1.8V 30 20 10 0 2.6 2.2 VGS = -1.5V 1.8 -1.8V -2.0V 1.4 -2.5V -4.5V 1 0.6 0 0.5 1 1.5 0 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 40 50 0.025 ID = -13.5A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 0.6 ID = -6.3A 0.02 0.015 TA = 125oC 0.01 TA = 25oC 0.005 0 -50 -25 0 25 50 75 100 125 150 175 0 1 TJ, JUNCTION TEMPERATURE (oC) 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 -IS, REVERSE DRAIN CURRENT (A) 100 VDS = -5.0V -ID, DRAIN CURRENT (A) 20 -ID, DRAIN CURRENT (A) 40 30 20 TA = 125oC o 25 C 10 -55oC 0 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4465 Rev B(W) FDS4465 Typical Characteristics 10000 VDS = -5V ID = -13.5A 4 8000 -15V 3 2 6000 4000 1 2000 0 0 COSS CRSS 0 20 40 60 80 100 0 5 Qg, GATE CHARGE (nC) 100 P(pk), PEAK TRANSIENT POWER (W) 10ms 10 100ms 1s 10s DC VGS = -4.5V SINGLE PULSE RJA = 125oC/W 0.1 TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RJA = 125C/W TA = 25C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 50 100s 1 15 Figure 8. Capacitance Characteristics. 1ms RDS(ON) LIMIT 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V CISS -10V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) + RJA 0.2 0.1 o RJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4465 Rev B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1