October 2000
PRELIMINARY
2000 Fairc hild S emi c onduc tor International FDS4465 Rev B(W)
FDS4465
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V ).
Applications
• Power management
• Load switch
• Battery protection
Features
• –13.5 A, –20 V. RDS(ON) = 8.5 mΩ @ VGS = –4.5 V
RDS(ON) = 10.5 mΩ @ VGS = –2.5 V
RDS(ON) = 14 mΩ @ VGS = –1.8 V
• Fast switching speed
• High performanc e trenc h technology for extremely
low RDS(ON)
• High current and power handling capability
S
D
S
S
SO-8
D
D
D
G
DDDD
SSSG
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Sourc e V oltage –20 V
VGSS Gate-Source Voltage ±8V
IDDrain Current – Continuous (Note 1a) –13.5 A
– Pulsed –50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b) 1.5
PD
(Note 1c) 1.2
W
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Am bient (Note 1a) 50 °C/W
RθJA Thermal Resistance, Junction-to-Am bient (Note 1c) 125 °C/W
RθJC Thermal Resistance, Junction-to-Cas e (Note 1) 25 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4465 FDS4465 13’’ 12mm 2500 units
FDS4465
FDS4465 Rev B(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source B reakdown Volt age VGS = 0 V, ID = –250 µA–20 V
∆BVDSS
===∆TJ
Breakdown Voltage Temperature
Coefficient ID = –250 µA, Referenced to 25°C–12 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leak age, Reverse VGS = –8 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA–0.4 –0.6 –1.5 V
∆VGS(th)
===∆TJ
Gate Threshold Voltage
Temperature Coeffic i ent ID = –250 µA, Referenced to 25°C3mV/°C
RDS(on) Static Drain–S ource
On–Resistance VGS = –4.5 V, ID = –13.5 A
VGS = –2.5 V, ID = –12 A
VGS = –1.8 V, ID = –10.5 A
VGS=–4.5 V, ID =–13.5A, TJ=125°C
6.7
8.0
9.8
9.0
8.5
10.5
14
13
mΩ
ID(on) On–Stat e Drain Current VGS = –4.5 V, VDS = –5 V –50 A
gFS Forward Transconductance VDS = –5 V, ID = –13.5 A 70 S
Dynamic Charac teristics
Ciss Input Capacitance 8237 pF
Coss Output Capacitance 1497 pF
Crss Reverse Transfer Capaci t ance
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz 750 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 20 36 ns
trTurn–On Rise Time 24 38 ns
td(off) Turn–Of f Delay Time 300 480 ns
tfTurn–Off Fall Time
VDD = –10V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 Ω
140 224 ns
QgTotal Gate Charge 86 120 nC
Qgs Gate–Source Charge 20 nC
Qgd Gate–Drain Charge
VDS = –10 V, ID = –13.5 A,
VGS = –4.5 V
11 nC
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drai n–S ource Diode Forward Current –2.1 A
VSD Drain–Source Di ode Forward
Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.6 –1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50 °C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105 °C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125 °C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4465
FDS4465 Rev B(W)
Typical Characteristics
0
10
20
30
40
50
00.511.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A
)
VGS = -4.5V
-2.5V
-2.0V
-1.8V -1.5V
0.6
1
1.4
1.8
2.2
2.6
3
0 1020304050
-ID, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANC
E
VGS = -1.5V
-4.5V
-2.0V -2.5V
-1.8V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNC TION TE MPERATURE ( oC)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANC
E
ID = -13.5A
VGS = -10V
0
0.005
0.01
0.015
0.02
0.025
012345
-VGS, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
ID = -6.3A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
00.511.52
-VGS, GATE TO SOUR CE V O LTAGE (V )
-I
D
, DRAIN CURRENT (A
)
TA = 125oC25oC
-55oC
VDS = -5.0V
0.0001
0.001
0.01
0.1
1
10
100
00.20.40.60.811.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A
)
VGS = 0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4465
FDS4465 Rev B(W)
Typical Characteristics
0
1
2
3
4
5
0 20406080100
Qg, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
ID = -13.5A VDS = -5V -10V
-15V
0
2000
4000
6000
8000
10000
0 5 10 15 20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAIN-SOURC E VOLTAG E (V)
-I
D
, DRAIN CURRENT (A
)
DC
10s1s
100ms
100
µ
s
RDS(ON) LIMIT
VGS = -4.5V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
10ms
1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100
t1, TIME (sec)
P(pk), PEA K TRANSIENT POWER ( W
)
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) + RθJA
RθJA = 125oC/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P
(p
k
)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4465
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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