PESD3V3L5UK - NXP - Datasheet.Directory

1. Product profile

1.1 General description

Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode

arrays in a leadless ultra sm all SOT891 Surface-Mounted Device (SMD) plastic package

designed to protect up to five unidire ctional signal lines from the damage caused by ESD

and other transients.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PESD3V3L5UK; PESD5V0L5UK

Low capacitance unidirectional fivefold ESD protection diode

arrays

Rev. 1 — 25 August 2010 Product data sheet

ESD protection of up to five lines Very low leakage current: IRM =0.5μA

Low diode capacitance ESD protection up to 20 kV

Max. peak pulse power: PPP =30W IEC 61000-4-2; level 4 (ESD)

Low clamping voltage: VCL =9.5V IEC 61000-4-5 (surge); IPP =3.2A

AEC-Q101 qualified

Computers and peripherals Communication systems

Audio and video equipment Portable electronics

Cellular handsets and accessories Subscriber Identity Module (SIM) card

protection

Table 1. Quick reference data

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff voltage

PESD3V3L5UK - - 3.3 V

PESD5V0L5UK - - 5.0 V

Cddiode capacitance f = 1 MHz; VR=0V

PESD3V3L5UK - 20 24 pF

PESD5V0L5UK - 18.5 22 pF

Product data sheet Rev. 1 — 25 August 2010 2 of 15

NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK

Low capacitance unidirectional fivefold ESD protection diode arrays

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode (diode 1)

2 common anode

3 cathode (diode 2)

4 cathode (diode 3)

5 cathode (diode 4)

6 cathode (diode 5) bottom view

321

456

006aaa159

Table 3. Ordering i nformation

Type number Package

Name Description Version

PESD3V3L5UK - plastic extremely thin small outline package;

no leads; 6 terminals; body 1 ×1×0.5 mm SOT891

PESD5V0L5UK

Table 4. Marking codes

Type number Marking code

PESD3V3L5UK P4

PESD5V0L5UK P5

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

PPP peak pulse power tp=8/20μs[1][2] -

PESD3V3L5UK - 28 W

PESD5V0L5UK - 30 W

IPP peak pulse current tp=8/20μs[1][2] -

PESD3V3L5UK - 3.2 A

PESD5V0L5UK - 3.1 A

Product data sheet Rev. 1 — 25 August 2010 3 of 15

NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK

Low capacitance unidirectional fivefold ESD protection diode arrays

[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.

[1] Device stressed with ten non-repetitive ESD pulses.

[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.

Per device

Tjjunction temperature - 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Table 6. ESD maximum ratings

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Max Unit

Per diode

VESD electrostatic discharge voltage IEC 61000-4-2

(contact discharge) [1][2]

PESD3V3L5UK - 15 kV

PESD5V0L5UK - 20 kV

PESD3V3L5UK

PESD5V0L5UK machine model [2] - 400 V

PESD3V3L5UK

PESD5V0L5UK MIL-STD-883 (human

body model) -8kV

Table 7. ESD standards compliance

Standard Conditions

Per diode

IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model) > 4 kV

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Product data sheet Rev. 1 — 25 August 2010 4 of 15

NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK

Low capacitance unidirectional fivefold ESD protection diode arrays

Fig 1. 8/20 μs pulse waveform accor d ing to

IEC 61000-4-5 Fig 2. ESD pulse wa veform according to

IEC 61000-4-2

t (μs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 μs

50 % IPP; 20 μs

001aaa63

100 %

90 %

30 ns

60 ns

10 %

= 0.7 ns to 1 ns

Product data sheet Rev. 1 — 25 August 2010 5 of 15

NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK

Low capacitance unidirectional fivefold ESD protection diode arrays

6. Characteristics

[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.

Table 8. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff voltage

PESD3V3L5UK - - 3.3 V

PESD5V0L5UK - - 5.0 V

IRM reverse leakage current

PESD3V3L5UK VRWM =3.3V - 0.4 2 μA

PESD5V0L5UK VRWM = 5.0 V - 0.08 0.5 μA

VBR breakdown voltage IR=1mA

PESD3V3L5UK 5.3 5.6 5.9 V

PESD5V0L5UK 6.47 6.8 7.14 V

Cddiode capacitance f = 1 MHz;

VR=0V

PESD3V3L5UK - 20 24 pF

PESD5V0L5UK - 18.5 22 pF

VCL clamping voltage [1][2]

PESD3V3L5UK IPP =3.1A - - 9.5 V

PESD5V0L5UK IPP =3A - - 9.9 V

rdif differential resistance IR=5mA

PESD3V3L5UK - 5 16 Ω

PESD5V0L5UK - 2.5 8 Ω

Product data sheet Rev. 1 — 25 August 2010 6 of 15

NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK

Low capacitance unidirectional fivefold ESD protection diode arrays

Tamb =25°C

Fig 3. Peak pulse power as a function of exponential

pulse duration; typical values Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical

values

f=1MHz; T

amb =25°C

(1) PESD3V3L5UK

(2) PESD5V0L5UK (1) PESD3V3L5UK

(2) PESD5V0L5UK

Fig 5. Diode capacitance as a function of reverse

voltage; typical values Fig 6. Relative variation of reverse current as a

function of junction temperature; typical

values

006aac374

tp (μs)

110

103

10 102

102

PPP

(W)

(°C)

0 20015050 100

001aaa633

0.4

0.8

1.2

PP(25°C)

006aac375

VR (V)

0.0 6.04.02.0

10.0

15.0

5.0

20.0

25.0

(pF)

0.0

(1)

(2)

006aac376

−1

(°C)

−75 7550025−25

RM(25°C)

(1)

(2)

(1)

Product data sheet Rev. 1 — 25 August 2010 7 of 15

NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK

Low capacitance unidirectional fivefold ESD protection diode arrays

Fig 7. V-I characteristics for a unidirec tional ESD protection diode

006aaa407

−V

RWM

−I

P-N

−+

Product data sheet Rev. 1 — 25 August 2010 8 of 15

NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK

Low capacitance unidirectional fivefold ESD protection diode arrays

Fig 8. ESD clamping test se tup and waveforms

006aac377

50 Ω

DUT

(DEVICE

UNDER

TEST)

GND

450 Ω

RG 223/U

50 Ω coax

ESD TESTER 4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

GND

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

unclamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network)

clamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network)

vertical scale = 2 kV/div

horizontal scale = 15 ns/div

vertical scale = 2 kV/div

horizontal scale = 15 ns/div

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

GND

vertical scale = 40 V/div

horizontal scale = 50 ns/div

vertical scale = 10 V/div

horizontal scale = 50 ns/div

PESD3V3L5UK

PESD5V0L5UK

Product data sheet Rev. 1 — 25 August 2010 9 of 15

NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK

Low capacitance unidirectional fivefold ESD protection diode arrays

7. Application information

The PESD3V3L5UK and the PESD5V0L5UK are designed for the protection of up to five

unidirectional dat a or signal lines fr om the damage caused by ESD and surge pulses. The

devices may be used on lines where the signal polarities are either positive or negative

with respect to ground. The PESD3V3L5UK provides a surge capability of 28 W per line

and the PESD5V0L5UK provides a surge capability of 30 W per line for an 8/20 μs

waveform.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the device as clos e to the input terminal or connector as possible.

2. The path length between the device and the protected line should be minimized.

3. Keep parallel signal path s to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should b e used whenever possible. For multilayer PCBs, use ground

vias.

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

Fig 9. Application diagram

006aac3

PESDxL5UK

data

lines

unidirectional protection of 5 lines

PESDxL5UK

bidirectional protection of 4 lines

Product data sheet Rev. 1 — 25 August 2010 10 of 15

NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK

Low capacitance unidirectional fivefold ESD protection diode arrays

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

[2] T4: 90° rotated reverse taping

Fig 10. Package outline SOT891

07-05-15Dimensions in mm

0.5

max

0.04

max

0.35

1.05

0.95

0.55

1.05

0.95

0.20

0.12

0.40

0.32

0.35

0.27

0.35

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

5000

PESD3V3L5UK SOT891 4 mm pitch, 8 mm tape and reel; T4 [2] -132

PESD5V0L5UK

Product data sheet Rev. 1 — 25 August 2010 11 of 15

NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK

Low capacitance unidirectional fivefold ESD protection diode arrays

11. Soldering

Reflow soldering is the only recommended soldering method.

Fig 11. Reflow soldering footprint SOT891

sot891_fr

solder resist

occupied area

solder land plus

solder paste

Dimensions in mm

0.25

(6×)

0.15

(6×)

0.5

(6×)

0.6

(6×)

0.7

0.35

1.4

1.05

Product data sheet Rev. 1 — 25 August 2010 12 of 15

NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK

Low capacitance unidirectional fivefold ESD protection diode arrays

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESD3V3L5UK_

PESD5V0L5UK v.1 20100825 Product data sheet - -

Product data sheet Rev. 1 — 25 August 2010 13 of 15

NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK

Low capacitance unidirectional fivefold ESD protection diode arrays

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond tho se described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggreg ate and cumulative liabil ity towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the applica tion or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objecti ve specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 25 August 2010 14 of 15

NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK

Low capacitance unidirectional fivefold ESD protection diode arrays

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PESD3V3L5UK; PESD3V3L5UK

Low capacitance unidirectional fivefold ESD protection diode arrays

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 25 August 2010

Document identifier: PESD3V3L5UK_PESD5V0L5UK

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Application information. . . . . . . . . . . . . . . . . . . 9

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Packing information . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14 Contact information. . . . . . . . . . . . . . . . . . . . . 14

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15