1N4448W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES * Silicon epitaxial planar diode * Fast switching diode * This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type designation LL4448, and the SOT-23 case with the type designation IMBD4448 * AEC-Q101 qualified * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART 1N4448W-V ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS 1N4448W-V-GS18 or 1N4448W-V-GS08 A3 Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 75 V VRRM 100 V f 50 Hz IF(AV) 150 mA t < 1 s and Tj = 25 C IFSM 500 mA Ptot 500 mW SYMBOL VALUE UNIT RthJA 350 K/W Junction temperature Tj 150 C Storage temperature Tstg - 65 to + 150 C Reverse voltage Repetitive peak reverse voltage Average rectified current half wave rectification with resistive load (1) Surge current Power dissipation (1) THERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air (1) TEST CONDITION Note (1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Rev. 1.4, 27-Jul-12 Document Number: 85722 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4448W-V www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. IF = 5 mA VF 0.62 IF = 100 mA Forward voltage TYP. MAX. UNIT 0.72 V VF 1 V nA VR = 20 V IR 25 VR = 75 V IR 5 A VR = 20 V, TJ = 150 C IR 50 A 4 pF 4 ns Leakage current Capacitance VF = VR = 0 V Reverse recovery time IF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 trr Rectification efficiency f = 100 MHz, VRF = 2 V 0.45 RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT 60 5 k 2 nF VRF = 2 V VO 17436 TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 104 103 Tj = 25 C 5 10 Tj = 25 C 3 5 10 Rf () IF (mA) f = 1 kHz 2 Tj = 100 C 102 1 2 102 5 2 10 10- 1 5 2 10- 2 0 1 VF (V) 18105 Fig. 1 - Forward Characteristics Rev. 1.4, 27-Jul-12 2 10-2 17438 10-1 1 10 102 IF (mA) Fig. 2 - Dynamic Forward Resistance vs. Forward Current Document Number: 85722 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4448W-V www.vishay.com Vishay Semiconductors mW 1000 104 5 900 2 800 103 700 5 600 2 IR (nA) Ptot 500 102 5 400 2 300 10 5 200 VR = 20 V 2 100 0 1 0 0 100 17439 200 C 100 17441 Tamb Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 200 Tj (C) Fig. 5 - Leakage Current vs. Junction Temperature Tj = 25 C 1.1 f = 1 MHz CD (VR) CD (0 V) 1.0 0.9 0.8 0.7 0 2 4 6 8 10 VR (V) 17440 Fig. 4 - Relative Capacitance vs. Reverse Voltage A 100 IFRM I 5 4 3 2 V = tp/T IFRM V=0 10 T = 1/fp tp t 0.1 5 4 3 2 T 0.2 1 0.5 5 4 3 2 0.1 18106 10-5 2 5 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10 s tp Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev. 1.4, 27-Jul-12 Document Number: 85722 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4448W-V www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8 0.45 (0.018) 0.25 (0.010) 0 to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.4, 27-Jul-12 Document Number: 85722 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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