SILICON TRANSISTORS Planar Epitaxial High Speed Switching (n-p-n) Maximum Ratings Characteristics Veso| Vcer | VEBO] Prot VCE(sat) bre fr Storage Time Type 25C (max) min. ts(max.) Out- No. amb. line at at Ic= Draw- le Ip atle Ip1=lp2 ing volts | volts | volts] mW ] volts mA mA min max. mA MHz ns mA Package Comments BSY95A 20 | 20 5 300 | 0-35 10} 0-2 50 200 10 200 50 10 TO-18 | T2B ZTX310, BSV23 25 | 20 3 300 | 0-6 10 | 1 20 _ 10 200 60 10 E-Line| 121 ZTX311, BSV24 20 | 15+t 5 300 | 0-35 10 | 0-2 50 200 10 200 25 10 E-Line| 121 For low cost ZTX312, BSV25 30 | 12tt 5 300 | 0-24 10 | 1 40 _ 10 400 13 10 E-Line| 721 high performance 271X313, BSV26 40 | 15tt 5 300 | 0-24 10 | 1 40 120 10 500 13 10 E-Line| 121 systems. ZTX314, BSV27 40 | 15+t 5 300 | 0-5 100 | 10 40 120 10 500 13 10 E-Line| T21 2N706 25 | 20 3 300 | 0-6 10] 1 20 10 200 60 10 TO-18 T2B 2N706A 25 | 20 5 300 | 0-6 10 | 1 20 60 10 200 25 10 TO-18 | T2B 2N708 40 } 20 5 360 | 0-4 10) 1 30 120 10 300 25 10 TO-18 T2B 2N709 16 6t 4 300 | 0-3 3; 0-15 20 120 10 600 6 5 TO-18 T2A 2N753 25 | 20 5 300 | 0-6 10] 1 40 420 10 250 35 _ TO-18 T2B 2N2206 25 | 20tt 5 300 | 0-22 10] 1 40 120 10 200 35 10 TO-46 TIA {| Highspeed 2N2368 40 | 15t 4-5; 360 | 0-25 10/1 20 60 10 400 10 10 TO-18 T2A | }logic and core 2N2369 40 | 15t 4-5) 360 | 0-25 10; 1 40 420 10 500 13 10 TO-18 T2A \\driving 2N2369A 40 | 18+ 4-51 360 | 0-2 10 | 1 40 120 10 500 13 10 TO-18 T2A {| applications 2N2475 15 6t 4 300 | 0-4 20 | 0-66 30 150 20 600 6 5 TO-18 T2A 2N2476 60 | 20+ 5 600 | 0-4 150 | 7-5 20 _ 150 250 25 150t TO-5 TIA 2N2477 60 | 20+ 5 600 | 0-4 150 | 3-75 40 _ 150 250 25 150t TO-5 TIA 2N2938 25 | 13+ 5 300 | 0-4 5011-6 25 _ 10 500 15 10 TO-18 T2A High voltage, high 2N3262 100 | 80t 4 1000 | 0-6 1000 | 100 40 _ 500 150 40 ll TO-5 T7C |{speed switching and pulse amplifier *Also available as ZT706, etc. + VcEO 2 VceEoO(sus) tt Veer, RL=100Q tlpq=lp2=15 mA. See note below High-Speed Core Drivers (n-p-n) High-Speed Core Drivers (n-p-n) ton at lo=1 Amp and [pq =Ip2=100mA Maximum Ratings Characteristics VcBo} VcEO | VeBO} Prot VeE(sat) hre fr Storage Time Type 25C (max.) min. ts (max.) Out- No. amb. line at at lc= Draw- Ic tp at I Ip1=!B2 ing volts | volts | volts | mW | volts mA mA min max. mA MHz ns mA Package Comments BSX12 25 12 4 600 | 0-33 | 300 | 30 30 120 | 300 450 15 100 TO-39 } T7C BSX59 70 | 45 5 800 | 0-3 150 15 30 _ 150 250 _ TO-5 T7A BSX60 70 | 30 5 800 | 0-3 150 15 30 _ 150 250 TO-5 T7A BSX61 70 | 45 5 800 | 0-5 150 15 30 _ 150 250 _ _ TO-5 TIA th 4 ZTX360 60 | 40 5 } 500 | 0-6 | 500 } 50 25 | 150 | 500 250 _ E-Line| 121 igh speed core ZT600 24 | 20 5 | 800 | 0-5 | 500 | 50 50 | 150 | 150 250 _ TO-5 T7A | (driver 2N3013 40 15 5 360 | 0-18 30 3 30 120 30 350 18 10 TO-18 | T2A ||aPPlications 2N3261 40 | 15 6 300 | 0-35 | 100 10 40 150 10 600 10 10 TO-18 | T2A 2N3512 60 | 35 5 soo | 0.4 150 | 7-5 | 50 | 500 250 30 150t | TO-5 TIA 2N3724 50 | 30 6 800 | 0-2 100 10 60 150 | 100 300 50 500* TO-5 TTA 2N3725 80 50 6 ! 800 | 0-26] 100 10 60 150 | 100 300 50 500* TO-5 T7A t Ipq Ip2 =15mA * 1=500mA, tpy =50mA, Ipa= ~5OmMA Lead Configuration: The leads of E-Line devices can be preformed, on request, to the TO-5 configuration and when this is done suffix K is added to the type number Similarly, suffix L indicates that the leads have been preformed to the TO-18 configuration. For flat mounting, suffix M is added to the type number. Other Transistor types available Planar Matched Pairs (n-p-n) Planar Medium Power and Switching (n-p-n) ZDT 10 ZDT 11 ZDT 20 ZDT 21 ZT 60--69 Planar Medium Power and Switching (p-n-p) Pianar General Purpose - Small Signal (n-p-n) Planar Epitaxial High Speed Switching (n-p-n) 23 ZT 152 ZT 202 ZT 203 ZT 204 ZT 402 ZT 403 ZT 404 2N 1708 2N 2205