S1VM02-600A
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
FEATURES
Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
Blocking Voltage to 600 Volts
On– State Current Rating of 1.5 Amperes RMS at Tc=80
℃
High Surge Current Capability — 15 Amperes
Glass-Passivated Surface for Reliability and Uniformity
Pb-Free Package
Sensitive Gate
Sillicon Controlled Rectifiers
Reverse Blocking Thyristors
SCRs
1.5 AMPERES RMS
600 VOLTS
SEMICONDUCTOR
LITE-ON
Rating Symbol Value Unit
Peak Repetitive Off– State Voltage (
T
J
= -40 to 110
℃
, Sine Wave, 50 to 60 Hz; Gate Open) V
DRM
,
V
RRM
600 Volts
On-State RMS Current (
T
C
=
80
℃
) 180° Conduction Angles I
T(RMS)
1.5 Amps
Peak Non-Repetitive Surge Current T
A
=25
℃
(1/2 Cycle, Sine Wave, 60 Hz,
T
J =
25
℃
) I
TSM
15 Amps
Circuit Fusing Consideration (t = 8.3 ms) I t 0.9 A s
Forward Peak Gate Power
(T
A
= 25
℃
, Pulse Width 1.0 us)
≦
P
GM
0.5 Watt
Forward Average Gate Power (
T
A
= 25
℃
, t = 8.3 ms) P
G(AV)
0.1 Watt
Forward Peak Gate Current (
T
A
= 25
℃
, Pulse Width
1.0 us
≦
)I
GM
0.2 Amp
Reverse Peak Gate Voltage (
T
A
= 25
℃
, Pulse Width 1.0 ms)
≦
V
GRM
5.0 Volts
Operating Junction Temperature Range @ Rate V
RRM
and V
DRM
T
J
-40 to +110
℃
Storage Temperature Range Tstg -40 to +150
℃
22
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for
zero or negative gate voltage; positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant
current source such that the voltage ratings of the devices are exceeded
Rev. 2, Oct-2010, KTXD16
TO-92 (TO-226AA)
1 Cathode
2 Gate
3 Anode
PIN ASSIGNMENT
All Dimensions in millimeter
TO-92
DIM. MIN. MAX.
A
C
D
E
F
G
B
4.45 4.70
5.33
4.32
3.18 4.19
1.39
1.15
2.42 2.66
12.7 ------
2.04 2.66
3.43
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