2N7002 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)60 V(BR)GSS (V)40 I(D) Max. (A)115m I(DM) Max. (A) Pulsed I(D) @Temp (oC) IDM Max (@25oC Amb)800m @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (oC)-55 Maximum Operating Temp (oC)150 Thermal Resistance Junc-Case200 Thermal Resistance Junc-Amb.350 V(GS)th Max. (V)2.5 V(GS)th (V) (Min)1.0 @(VDS) (V) (Test Condition)20 @I(D) (A) (Test Condition)250u I(DSS) Max. (A)1.0u @V(DS) (V) (Test Condition)60 @Temp (oC) (Test Condition)25 I(GSS) Max. (A)100n