Absolute Maximum Ratings Values Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Units RGE = 20 k Tcase = 25/85 C Tcase = 25/85 C; tp = 1 ms per IGBT, Tcase = 25 C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 600 / 400 1200 / 800 20 2750 -40 ... +150 (125) 2500 Class F 40/125/56 V V A A V W C V 390 / 260 1200 / 800 2900 42000 A A A A2s SEMITRANS(R) M Low Loss IGBT Modules SKM 400 GA 124 D Inverse Diode IF = -IC IFM = -ICM IFSM I 2t Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 C tp = 10 ms; Tj = 150 C SEMITRANS 4 Characteristics Symbol Conditions 1) V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon Eoff VGE = 0, IC = 4 mA VGE = VCE, IC = 12 mA3 Tj = 25 C VGE = 0 VCE = VCES Tj = 125 C VGE = 20 V, VCE = 0 IC = 300 A VGE = 15 V; IC = 400 A Tj = 25 (125) C VCE = 20 V, IC = 300 A per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 600 V VGE = -15 V / +15 V3) IC = 300 A, ind. load RGon = RGoff = 5 Tj = 125 C min. typ. max. Units 4,5 - - - - - 124 - 5,5 0,4 24 - 2,1(2,4) 2,5(3,0) - - 6,5 3 - 1 2,45(2,85) - - V V mA mA A V V S - - - - - 1300 22 3,3 1,2 - 1500 30 4 1,6 20 pF nF nF nF nH - - - - - - 89 77 690 70 36 42 - - - - - - ns ns ns ns mWs mWs - - - - - - 2,0(1,8) 2,25(2,05) - - 154 37 2,5 - 1,2 3,5 - - V V V m A C - - - - - - 0,045 0,125 0,038 C/W C/W C/W VCES Inverse Diode 8) VF = VEC VF = VEC VTO rt IRRM Qrr IF = 300 A VGE = 0 V; IF = 400 A Tj = 25 (125) C Tj = 125 C Tj = 125 C IF = 300 A; Tj = 125 C2) IF = 300 A; Tj = 125 C2) GA Features * MOS input (voltage controlled) * N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT) * Low inductance case * Very low tail current with low temperature dependance * High short circuit capability, self limiting to 6 * Icnom * Latch-up free * Fast & soft inverse CAL diodes 8) * Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould * Large clearance (12 mm) and creepage distances (20 mm) Typical Applications * Switching (not for linear use) * Inverter drives * UPS Thermal characteristics Rthjc Rthjc Rthch per IGBT per diode D per module 1) 2) 3) 8) Tcase = 25 C, unless otherwise specified IF = - IC, VR = 600 V, -diF/dt = 2000 A/s, VGE = 0 V Use VGEoff = -5... -15 V CAL = Controlled Axial Lifetime Technology. Cases and mech. data B 6 - 194 (c) by SEMIKRON 0898 http://store.iiic.cc/ B 6 - 189 SKM 400 GA 124 D M401G124.X LS -1 3000 M401G124.X LS -2 120 Tj = 125 C VCE = 300 V VGE = 15 V RG = 5 mWs W 2500 100 2000 80 1500 60 1000 40 Eon Eoff 500 20 E P tot 0 0 0 20 40 60 80 100 120 140 TC 160 C 0 Fig. 1 Rated power dissipation Ptot = f (TC) 400 600 800 A Fig. 2 Turn-on /-off energy = f (IC) M401G124.X LS -3 180 mWs 160 200 IC Tj = 125 C VCE = 300 V VGE = 15 V IC = 300 A E on 140 M401G124.X LS -4 10000 A 1000 tp=15s 100 100s 10 1ms 1 pulse TC = 25 C Tj 150 C 120 100 E off 80 60 10ms 40 1 Not for linear use IC 20 E 0 0,1 0 RG 5 10 15 20 25 30 35 1 Fig. 3 Turn-on /-off energy = f (RG) 100 1000 10000 V Fig. 4 Maximum safe operating area (SOA) IC = f (VCE) M401G124.X LS-5 2,5 10 VCE VGE = 15 V RGoff = 5 IC = 300 A 2 M401G124.X LS -6 12 Tj 150 C 10 di/dt=1000 A/s 3000 A/s 5000 A/s 8 1,5 Tj 150 C VGE = 15 V tsc 10 s L < 50 nH IC = 300 A 6 4 allowed numbers of short circuits: <1000 2 time between short circuits: >1s 1 0,5 ICpuls /IC ICSC/IC 0 0 0 200 VCE 400 600 800 Fig. 5 Turn-off safe operating area (RBSOA) B 6 - 190 0 1000 1200 1400 V 200 V CE 400 600 800 1000 1200 1400 V Fig. 6 Safe operating area at short circuit IC = f (VCE) 0898 http://store.iiic.cc/ (c) by SEMIKRON M4 0 1G1 24 .X LS -8 Tj = 150 C VGE 15V 600 A 500 400 300 200 100 IC 0 0 20 40 60 80 100 120 140 TC 160 C Fig. 8 Rated current vs. temperature IC = f (TC) M401G124.X LS -9 600 M401G124.X LS-10 600 A A 17V 15V 13V 11V 9V 7V 500 400 500 17V 15V 13V 11V 9V 7V 400 300 300 200 200 100 100 IC IC 0 0 0 1 2 3 4 V CE V 5 0 1 2 3 4 5 V CE Fig. 9 Typ. output characteristic, tp = 250 s; Tj = 25 C V Fig. 10 Typ. output characteristic, t p = 250 s; Tj = 125 C M401G124.X LS-12 600 Pcond(t) = VCEsat(t) * IC(t) A 500 VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) * IC(t) 400 VCE(TO)(Tj) 1,3 + 0,0005 (Tj -25) [V] 300 typ.: rCE(Tj) = 0,0027 + 0,000008 (Tj -25) [] 200 max.: rCE(Tj) = 0,0038 + 0,000012 (Tj -25) [] valid for VGE = + 15 +2 -1 100 IC [V]; IC 0,3 ICn 0 0 2 V GE Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations (c) by SEMIKRON 4 6 8 10 12 V 14 Fig. 12 Typ. transfer characteristic, tp = 250 s; VCE = 20 V 0898 http://store.iiic.cc/ B 6 - 191 SKM 400 GA 124 D M401G124.X LS-13 20 V M401G124.X LS -14 100 ICpuls = 300 A 18 nF VGE = 0 V f = 1 MHz Cies 16 600V 14 10 12 800V Coes 10 8 1 6 Cres 4 C 2 VGE 0 0,1 0 QGate 400 800 1200 1600 nC 2000 0 Fig. 13 Typ. gate charge characteristic 20 30 V Fig. 14 Typ. capacitances vs.VCE M401G124.X LS-15 10000 10 V CE ns 1000 tdoff M401G124.X LS -16 10000 Tj = 125 C VCE = 300 V VGE = 15 V RGon = 5 RGoff = 5 induct. load ns Tj = 125 C VCE = 300 V VGE = 15 V IC = 200 A induct. load t doff 1000 t don tr tr 100 tf 100 tdon tf t t 10 10 0 200 400 600 800 0 A IC Fig. 15 Typ. switching times vs. IC 20 30 M401G124.X LS-18 25 RG= mJ A Tj=125C, typ. 500 40 Fig. 16 Typ. switching times vs. gate resistor RG M401G124.X LS -17 600 10 RG Tj=25C, typ. VCC = 600 V Tj = 125 C VGE = 15 V 3 20 4 15 6 10 12 5 30 Tj=125C, max. 400 Tj=25C, max. 300 200 100 EoffD IF 0 0 0 VF 1 2 V Fig. 17 Typ. CAL diode forward characteristic B 6 - 192 0 I F 3 100 200 300 400 A 500 Fig. 18 Diode turn-off energy dissipation per pulse 0898 http://store.iiic.cc/ (c) by SEMIKRON M401G124.XLS-19 0,1 M 401G124.XLS-20 1 K/W K/ 0,1 0,01 0,01 D=0,50 0,20 0,10 0,05 0,02 0,01 0,001 0,001 single pulse ZthJC 0,0001 0,00001 0,0001 tp single pulse ZthJC 0,001 0,01 0,1 s 0,0001 0,00001 1 0,01 0,1 1 s M 401G124.XLS-23 500 VCC = 600 V Tj = 125 C VGE = 15 V RG= 3 400 0,001 Fig. 20 Transient thermal impedance of inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp * f M 401G124.XLS-22 A 0,0001 tp Fig. 19 Transient thermal impedance of IGBT ZthJC = f (tp); D = tp / tc = tp * f 500 D=0,5 0,2 0,1 0,05 0,02 0,01 VCC = 600 V Tj = 125 C VGE = 15 V IF = 300 A A RG= 3 400 4 4 300 300 6 6 200 12 200 12 100 30 100 30 IRR IRR 0 0 0 100 200 300 400 500 IF 0 Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; RG) 4000 6000 8000 A/s Fig. 23 Typ. CAL diode peak reverse recovery current IRR = f (di/dt) M 401G124.XLS-24 60 I:\MARKETIN\FRAMEDAT\datbl\B06-igbt\400GA124D.FM 2000 diF/dt A 4 RG= 6 C 3 IF= 400 A 300 A 12 40 VCC = 600 V Tj = 125 C VGE = 15 V 30 220 A 150 A 75 A 20 Qrr 0 0 diF/dt 2000 4000 6000 8000 A/s Fig. 24 Typ. CAL diode recovered charge (c) by SEMIKRON 0898 http://store.iiic.cc/ B 6 - 193 SKM 400 GA 124 D SEMITRANS 4 Case D 59 UL Recognized File no. E 63 532 Dimensions in mm Case outline and circuit diagram Mechanical Data Symbol Conditions M1 M2 a w B 6 - 194 to heatsink, SI Units to heatsink, US Units for terminals, SI Units for terminals, US Units Values (M6) (M6/M4) Units min. typ. max. 3 27 2,5/1,1 22/10 - - - - - - - - 5 44 5/2 44/18 5x9,81 330 0898 http://store.iiic.cc/ Nm lb.in. Nm lb.in. m/s2 g This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. Three devices are supplied in one SEMIBOX B without mounting hardware, which can be ordered separately under Ident No. 33321100 (for 10 SEMITRANS 4) Larger packing units of 12 or 20 pieces are used if suitable Accessories B 6 - 4 SEMIBOX C - 1. (c) by SEMIKRON