
© by SEMIKRON 0898 B 6 – 189
Absolute Maximum Ratings Values
Symbol Conditions 1) Units
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
RGE = 20 kΩ
Tcase = 25/85 °C
Tcase = 25/85 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
1200
1200
600 / 400
1200 / 800
± 20
2750
–40 ... +150 (125)
2500
Class F
40/125/56
V
V
A
A
V
W
°C
V
Inverse Diode
IF = –IC
IFM = –ICM
IFSM
I2t
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
tp = 10 ms; sin.; Tj = 150 °C
tp = 10 ms; Tj = 150 °C
390 / 260
1200 / 800
2900
42000
A
A
A
A2s
Characteristics
Symbol Conditions 1) min. typ. max. Units
V(BR)CES
VGE(th)
ICES
IGES
VCEsat
VCEsat
gfs
VGE = 0, IC = 4 mA
VGE = VCE, IC = 12 mA3
VGE = 0 Tj = 25 °C
VCE = VCES Tj = 125 °C
VGE = 20 V, VCE = 0
IC = 300 A VGE = 15 V;
IC = 400 A Tj = 25 (125) °C
VCE = 20 V, IC = 300 A
≥ VCES
4,5
–
–
–
–
–
124
–
5,5
0,4
24
–
2,1(2,4)
2,5(3,0)
–
–
6,5
3
–
1
2,45(2,85)
–
–
V
V
mA
mA
µA
V
V
S
CCHC
Cies
Coes
Cres
LCE
per IGBT
VGE = 0
VCE = 25 V
f = 1 MHz
–
–
–
–
–
1300
22
3,3
1,2
–
1500
30
4
1,6
20
pF
nF
nF
nF
nH
td(on)
tr
td(off)
tf
Eon
Eoff
VCC = 600 V
VGE = –15 V / +15 V3)
IC = 300 A, ind. load
RGon = RGoff = 5 Ω
Tj = 125 °C
–
–
–
–
–
–
89
77
690
70
36
42
–
–
–
–
–
–
ns
ns
ns
ns
mWs
mWs
Inverse Diode 8)
VF = VEC
VF = VEC
VTO
rt
IRRM
Qrr
IF = 300 A VGE = 0 V;
IF = 400 A Tj = 25 (125) °C
Tj = 125 °C
Tj = 125 °C
IF = 300 A; Tj = 125 °C2)
IF = 300 A; Tj = 125 °C2)
–
–
–
–
–
–
2,0(1,8)
2,25(2,05)
–
–
154
37
2,5
–
1,2
3,5
–
–
V
V
V
mΩ
A
µC
Thermal character isti c s
Rthjc
Rthjc
Rthch
per IGBT
per diode D
per module
–
–
–
–
–
–
0,045
0,125
0,038
°C/W
°C/W
°C/W
SEMITRANS® M
Low Loss IGBT Modules
SKM 400 GA 124 D
Features
•MOS input (voltage controlled)
•N channel, homogeneous Silicon
structure (NP T- Non punch-
through IGBT)
•Low inductance case
•Very low tail current with low
temperature dependance
•High short circuit capability,
self limiting to 6 * Icnom
•Latch-up free
•Fast & soft inverse CAL diodes 8)
•Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
•Large clearance (12 mm) and
creepage distances (20 mm)
Typical Applications
•Switching (not for linear use)
•Inverter drives
•UPS
1) Tcase = 25 °C, unless otherwise
specified
2) IF = – IC, VR = 600 V,
–diF/dt = 2000 A/µs, VGE = 0 V
3) Use VGEoff = –5... –15 V
8) CAL = Controlled Axial Lifetime
Technology.
Cases and mech. data
→ B 6 – 194
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