TOSHIBA 1$8V314 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1$8V314 VCO FOR UHF BAND RADIO Unit in mm e High Capacitance Ratio : Co5 y/Co5y = 2.5 (Typ.) e Low Series Resistance : Ig = 0.35 O (Typ.) wt OP 804 @ Useful for Small Size Tuner 4 Crt a - = 2 S 3 = +H + & ae 2 MAXIMUM RATINGS (Ta = 25C) 03 TE on 20.05, 0.05 CHARACTERISTIC SYMBOL | RATING | UNIT S 0.8+0.1 Reverse Voltage VR 10 Vv Junction Temperature Tj 125 C oo Storage Temperature Range Tstg 55~125 C ESC JEDEC _ EIAJ TOSHIBA 1-1G1A ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Reverse Voltage VR IR=1yA 10; _ Vv Reverse Current IR VR=10V 3] nA Capacitance Cosv |VR=0.5V, f= 1MHz 7.3| 8.4 | pF Capacitance Co5vV |VR=2.5V, f=1MHz 2.75| 3.4 | pF Capacitance Ratio Co.5 Vv! 2.4 2.5| C2.5V Series Resistance Ig VR =1V, f= 470 MHz 0.35) O, MARKING S| V6 96100 1EAA1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability te physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999- 03-03 1/2TOSHIBA 1$8V314 Cv - VR rg VR f= 1MHz f = 470 MHz Ta = 25C a Ta = 25C & E an ~ ze > oO a z 8 a z, H < 2 5 g a s 3 g o % ica wm 0 1 2 3 4 5 6 0.1 0.3 05 1 3. 5 10 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) 1999-03-03 2/2