MITSUBISHI INTELLIGENT POWER MODULES PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE A B C D P X Q S 1234 F P P T 1. V UPC 2. U FO 3. U P 4. V UPI 5. V VPC 6. V FO 7. V P 8. V VPI 9. V WPC 10. WFO 11. WP 12. V WPI 13. V NC 5678 9 Y (15 TYP.) 11 13 15 17 19 10 12 14 16 18 H G U (4 TYP.) P N V - DIA. (4 TYP.) B N M M V U M M W Z M 14. V NI 15. B R 16. U N 17. V N 18. WN 19. FO 20. P 21. B 22. N 23. U 24. V 25. W Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. E 2.0 0.1 X 0.5 0.1 MM PIN (6 TYP.) N W U FO V UPI V UPC UP Features: u Complete Output Power Circuit u Gate Drive Circuit u Protection Logic OUT V CC FO IN SI V VPI J K GND GND OUT V CC V VPC VP V FO IN FO V WPI V SI GND GND OUT V CC IN FO SI GND GND IN FO SI OUT V CC UN B GND GND VN IN FO OUT V CC TEMP SI GND GND OUT V CC V NI V NC WN IN FO SI GND GND OUT V CC FO BR IN FO SI GND GND V WPC WP W FO 0.6 0.1 X 0.4 0.1 MM PIN (19 TYP.) W L R AA U - Short Circuit - Over Current - Over Temperature - Under Voltage P Outline Drawing and Circuit Diagram Dimensions A Inches Millimeters 3.980.04 101.01.0 Dimensions Inches Millimeters N 0.41 10.5 B 3.78 96.0 P 0.400 10.16 C 3.480.03 88.50.8 Q 0.392 9.96 D 2.7000.03 68.580.8 R 0.31 8.0 E 2.660.02 67.50.5 S 0.26 6.5 F 2.360.04 60.01.0 T 0.246 G 1.850.02 47.00.5 U 0.18 Rad. Rad. 4.5 6.25 H 1.830.03 46.50.8 V 0.18 Dia. Dia. 4.5 J 1.28 32.6 W 0.170.02 4.40.5 K 0.97 24.6 X 0.10 2.5 L 0.710.04 18.01.0 Y 0.1000.01 2.540.25 M 0.530.01 13.50.3 Z 0.02 0.5 AA 0.14 3.5 Applications: u Inverters u UPS u Motion/Servo Control u Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM15RSH120 is a 1200V, 15 Ampere Intelligent Power Module. Type PM Current Rating Amperes VCES Volts (x 10) 15 120 Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25C unless otherwise specified Ratings Symbol PM15RSH120 Units Tj -20 to 150 C Storage Temperature Tstg -40 to 125 C Case Operating Temperature TC -20 to 100 C Mounting Torque, M4 Mounting Screws -- 0.98 ~ 1.47 N*m Module Weight (Typical) -- 100 Grams Power Device Junction Temperature Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125C) VCC(prot.) 800 Volts Viso 2500 Vrms VD 20 Volts Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN * VN * WN * Br-VNC) VCIN 20 Volts Fault Output Supply Voltage Applied between (UFO-VUPC, VFO-VVPC, WFO-VWPC, FO-VNC) VFO 20 Volts Fault Output Current (Sink Current at UFO, VFO, WFO and FO Terminal) IFO 20 mA VCES 1200 Volts Collector Current, (TC = 25C) IC 15 Amperes Peak Collector Current, (TC = 25C) ICP 30 Amperes Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Control Sector Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC) IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Supply Voltage (Applied between P - N) Supply Voltage, Surge (Applied between P - N) Collector Dissipation VCC 900 Volts VCC(surge) 1000 Volts PC 83 Watts VCES 1200 Volts IC 10 Amperes Brake Sector Collector-Emitter Voltage Collector Current, (TC = 25C) Peak Collector Current, (TC = 25C) ICP 20 Amperes Supply Voltage (Applied between P - N) VCC 900 Volts VCC(surge) 1000 Volts PC 41 Watts IF 10 Amperes VR(DC) 1200 Volts Supply Voltage, Surge (Applied between P - N) Collector Dissipation Diode Forward Current Diode DC Reverse Voltage Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units OC -20C T 125C, VD = 15V 22 37 -- Amperes 15 27 -- Amperes Control Sector Over Current Trip Level Inverter Part Over Current Trip Level Brake Part Short Circuit Trip Level Inverter Part SC -20C T 125C, VD = 15V Short Circuit Trip Level Brake Part Over Current Delay Time Over Temperature Protection Supply Circuit Under Voltage Protection -- 56 -- Amperes -- 41 -- Amperes toff(OC) VD = 15V -- 10 -- s OT Trip Level 100 110 120 C OTr Reset Level -- 90 -- C UV Trip Level 11.5 12.0 12.5 Volts UVr Reset Level -- 12.5 -- Volts Supply Voltage VD Applied between VUP1-VUPC, 13.5 15 16.5 Volts Circuit Current ID -- 25 35 mA VVP1-VVPC, VWP1-VWPC, VN1-VNC VD = 15V, VCIN = 15V, VN1-VNC VD = 15V, VCIN = 15V, VXP1-VXPC -- 7 10 mA Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts Input OFF Threshold Voltage Vth(off) UP-VUPC, VP-VVPC, WP-VWPC, 1.7 2.0 2.3 Volts UN * VN * WN * Br-VNC PWM Input Frequency fPWM 3- Sinusoidal -- 15 20 kHz Fault Output Current IFO(H) VD = 15V, VFO = 15V -- -- 0.01 mA IFO(L) VD = 15V, VFO = 15V -- 10 15 mA tFO VD = 15V 1.0 1.8 -- ms Minimum Fault Output Pulse Width Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units VCE = VCES, Tj = 25C -- -- 1.0 mA VCE = VCES, Tj = 125C -- -- 10 mA IGBT Inverter Sector Collector Cutoff Current Emitter-Collector Voltage Collector-Emitter Saturation Voltage ICES VEC -IC = 15A, VD = 15V, VCIN = 5V -- 2.5 3.5 Volts VCE(sat) VD = 15V, VCIN = 0V, IC = 15A -- 2.3 3.3 Volts VD = 15V, VCIN = 0V, IC = 15A, -- 2.1 3.1 Volts 0.4 0.7 1.5 s -- 0.15 0.3 s Tj = 125C Inductive Load Switching Times ton trr VD = 15V, VCIN = 0 15V tC(on) VCC = 600V, IC = 15A -- 0.3 1.0 s toff Tj = 125C -- 1.7 2.9 s -- 0.7 1.3 s -- 2.8 3.8 Volts -- 2.5 3.5 Volts IF = 10A, VD = 15V, VCIN = 5V -- 2.5 3.5 Volts VCE = VCES, Tj = 25C -- -- 1 mA VCE = VCES, Tj = 125C -- -- 10 mA tC(off) Brake Sector Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 10A, Tj = 25C VD = 15V, VCIN = 0V, IC = 10A, Tj = 125C Diode Forward Voltage VFM Collector Cutoff Current ICES Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT -- -- 1.5 C/Watt Rth(j-c)F Each Inverter FWDi -- -- 4.5 C/Watt Rth(c-f)Q Each Brake IGBT -- -- 3.0 C/Watt Rth(c-f)F Each Brake FWDi -- -- 5.5 C/Watt Rth(c-f) Case to Fin Per Module, -- -- 0.044 C/Watt Contact Thermal Resistance Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage VCC Applied across P-N Terminals 0 ~ 800 Volts Applied between VUP1-VUPC, 15 1.5 Volts VD VN1-VNC, VVP1-VVPC, VWP1-VWPC Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts Input OFF Voltage VCIN(off) UP, VP, WP, UN, VN, WN, Br 4.0 ~ VD Volts PWM Input Frequency fPWM Using Application Circuit 5 ~ 20 kHz Minimum Dead Time tdead Input Signal 2.5 s Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1.5 1.0 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC 0.5 2.5 2.0 1.5 1.0 IC = 15A VCIN = 0V Tj = 25oC Tj = 125oC 0.5 0 0 5 10 15 20 12 14 16 18 0 1.0 2.0 3.0 SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 103 102 VCC = 600V VD = 15V Inductive Load Inductive Load Inductive Load toff 100 ton 10-1 100 101 Tj = 25oC Tj = 125oC 100 tc(off) tc(on) 10-1 100 102 REVERSE RECOVERY TIME, trr, (s) VCC = 600V VD = 15V SWITCHING TIMES, tc(on), tc(off), (s) VCC = 600V VD = 15V Tj = 25oC Tj = 125oC 101 Tj = 25oC Tj = 125oC trr 102 101 Irr 101 100 102 100 102 101 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR REVERSE CURRENT, -IC, (AMPERES) DIODE FORWARD CHARACTERISTICS OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) OVER CURRENT TRIP LEVEL VS. TEMPERATURE (TYPICAL) 140 OVER CURRENT TRIP LEVEL % (NORMALIZED) VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC 101 100 120 Tj = 25oC OVER CURRENT TRIP LEVEL % (NORMALIZED) COLLECTOR REVERSE CURRENT, -IC, (AMPERES) 10 20 101 120 100 80 60 0 0 15 13 COLLECTOR CURRENT, IC, (AMPERES) 101 102 VD = 17V 0 0 25 Tj = 25oC VCIN = 0V 1 2 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 3 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 2.0 COLLECTOR CURRENT, IC, (AMPERES) 2.5 0 SWITCHING TIMES, ton, toff, (s) 20 3.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE VCE(sat), (VOLTS) 3.0 OUTPUT CHARACTERISTICS (TYPICAL) VD = 15V 110 100 90 80 0 0 12 14 16 18 SUPPLY VOLTAGE, VD, (VOLTS) 20 -20 0 20 60 100 140 JUNCTION TEMPERATURE, Tj, (oC) Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) 2.5 15 UVt UVr 14 2.0 UV TRIP-RESET LEVEL, UVt, UVr, (VOLTS) FAULT OUTPUT PULSE WIDTH, tfo, (ms) VD = 15V 1.5 1.0 13 12 11 0 0 -50 0 50 100 150 -50 0 50 100 JUNCTION TEMPERATURE, Tj, (oC) JUNCTION TEMPERATURE, Tj, (oC) 10-3 150 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 1.5oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 4.5oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE Brake Part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 4 3 2 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC 0 4 3 2 1 Tj = 25oC VCIN = 0V IC = 10A 0 0 2 4 6 8 10 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 101 100 0 0.5 1.0 1.5 2.0 2.5 DIODE FORWARD VOLTAGE, VF, (VOLTS) 3.0 15 13 6 4 2 12 14 16 18 20 0 1 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 3.0oC/W 10-2 10-1 TIME, (s) 100 3 4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 10-3 10-3 2 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) DIODE FORWARD CHARACTERISTICS VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC VD = 17V 8 SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 102 Tj = 25oC VCIN = 0V 0 0 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 1 10 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 DIODE FORWARD CURRENT, IF, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 101 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 5.5oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) Sep.1998