Sep.1998
Description:
Mitsubishi Intelligent Power Mod-
ules are isolated base modules de-
signed for power switching applica-
tions operating at frequencies to
20kHz. Built-in control circuits pro-
vide optimum gate drive and pro-
tection for the IGBT and free-wheel
diode power devices.
Features:
uComplete Output Power
Circuit
uGate Drive Circuit
uProtection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
Applications:
uInverters
uUPS
uMotion/Servo Control
uPower Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM15RSH120 is a 1200V,
15 Ampere Intelligent Power Mod-
ule.
Type Current Rating VCES
Amperes V olts (x 10)
PM 15 120
Dimensions Inches Millimeters
A 3.98±0.04 101.0±1.0
B 3.78 96.0
C 3.48±0.03 88.5±0.8
D 2.700±0.03 68.58±0.8
E 2.66±0.02 67.5±0.5
F 2.36±0.04 60.0±1.0
G 1.85±0.02 47.0±0.5
H 1.83±0.03 46.5±0.8
J 1.28 32.6
K 0.97 24.6
L 0.71±0.04 18.0±1.0
M 0.53±0.01 13.5±0.3
Dimensions Inches Millimeters
N 0.41 10.5
P 0.400 10.16
Q 0.392 9.96
R 0.31 8.0
S 0.26 6.5
T 0.246 6.25
U 0.18 Rad. Rad. 4.5
V 0.18 Dia. Dia. 4.5
W 0.17±0.02 4.4±0.5
X 0.10 2.5
Y 0.100±0.01 2.54±0.25
Z 0.02 0.5
AA 0.14 3.5
Outline Drawing and Circuit Diagram
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLA T -BASE TYPE
INSULATED PACKAGE
J
K
W
1.
2.
3.
4.
5.
6.
7.
8.
9.
V
V
V
V
V
V
V
10.
11.
12.
13.
14.
15.
16.UU
V
V
W
W
WPC
UPI
VPI
WPI
NC
NI
PN
P
P
N
N
UPC
F
O
V
VPC
17.
18.
19.
V
V
CC
S
I
GND GND
OUT
UPI
V
U
FO
UP
UPC
F
O
IN
V
CC
S
I
GND GND
OUT
F
O
IN
V
CC
S
I
GND GND
OUT
F
O
IN
V
V
FO
V
V
FO
VPI
V
VP
VPC
WPI
W
WP
WPC
V
CC
S
I
GND GND
OUT
F
O
IN
V
CC
S
I
GND GND
OUT
F
O
IN
U
N
V
CC
S
I
GND GND
OUT
F
O
IN
V
V
W
N
V
NI
N
NC
TEMP
F
O
PUVWN
V
CC
S
I
GND GND
OUT
F
O
IN
B
B
R
20.
21.
22.
23.
24.
25.W
V
U
N
B
P
B
W
FO
V
FO
U
FO
L
R
AA
R
C
Q
F
A
PPP
T
B
D
X
E
GH
Z
S
10
12
W
34 75 6 8 9 11 13 15 17 19
12 14 16 18
V
V - DIA.
(4 TYP.)
NM
PBNU
Y (15 TYP.)
MMMM
U (4 TYP.)
2.0 ± 0.1 X 0.5 ± 0.1 MM PIN
(6 TYP.)
0.6 ± 0.1 X 0.4 ± 0.1 MM PIN
(19 TYP.)
Sep.1998
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol PM15RSH120 Units
Power Device Junction Temperature Tj-20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC-20 to 100 °C
Mounting Torque, M4 Mounting Screws — 0.98 ~ 1.47 N · m
Module Weight (Typical) — 100 Grams
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C) VCC(prot.) 800 Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
Control Sector
Supply V oltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC)V
D20 Volts
Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN · Br-VNC)V
CIN 20 Volts
Fault Output Supply Voltage Applied between (
U
FO
-V
UPC
, V
FO
-V
VPC
, W
FO
-V
WPC
, F
O
-V
NC
)V
FO 20 Volts
Fault Output Current (Sink Current at UFO, VFO, WFO and FO Terminal) IFO 20 mA
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 1200 Volts
Collector Current, (TC = 25°C) IC15 Amperes
Peak Collector Current, (TC = 25°C) ICP 30 Amperes
Supply Voltage (Applied between P - N) VCC 900 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 1000 Volts
Collector Dissipation PC83 Watts
Brake Sector
Collector-Emitter V oltage VCES 1200 Volts
Collector Current, (TC = 25°C) IC10 Amperes
Peak Collector Current, (TC = 25°C) ICP 20 Amperes
Supply Voltage (Applied between P - N) VCC 900 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 1000 Volts
Collector Dissipation PC41 Watts
Diode Forward Current IF10 Amperes
Diode DC Reverse Voltage VR(DC) 1200 Volts
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLA T-BASE TYPE
INSULATED PACKAGE
Sep.1998
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ . Max. Units
Control Sector
Over Current Trip Level Inverter Part OC -20°C ≤ T ≤ 125°C, VD = 15V 22 37 — Amperes
Over Current Trip Level Brake Part 15 27 — Amperes
Short Circuit T rip Level Inverter Part SC -20°C ≤ T ≤ 125°C, VD = 15V — 56 — Amperes
Short Circuit Trip Level Brake Part — 41 — Amperes
Over Current Delay Time toff(OC) VD = 15V — 10 — µs
Over Temperature Protection OT T rip Level 100 110 120 °C
OTrReset Level — 90 — °C
Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts
UVrReset Level — 12.5 — V olts
Supply V oltage VDApplied between VUP1-VUPC, 13.5 15 16.5 Volts
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Circuit Current IDVD = 15V, VCIN = 15V, VN1-VNC —2535mA
V
D
= 15V, VCIN = 15V, VXP1-VXPC — 7 10 mA
Input ON Threshold Voltage V th(on) Applied between 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage Vth(off) UP-VUPC, VP-VVPC, WP-VWPC, 1.7 2.0 2.3 Volts
UN · VN · WN · Br-VNC
PWM Input Frequency fPWM 3-φ Sinusoidal — 15 20 kHz
Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA
IFO(L) VD = 15V, VFO = 15V — 10 15 mA
Minimum Fault Output Pulse Width tFO VD = 15V 1.0 1.8 — ms
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLA T-BASE TYPE
INSULATED P ACKAGE
Sep.1998
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ . Max. Units
IGBT Inverter Sector
Collector Cutoff Current ICES VCE = VCES, Tj = 25°C — — 1.0 mA
VCE = VCES, Tj = 125°C——10mA
Emitter-Collector V oltage VEC -IC = 15A, VD = 15V, VCIN = 5V — 2.5 3.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 15A — 2.3 3.3 Volts
VD = 15V, VCIN = 0V, IC = 15A, — 2.1 3.1 Volts
Tj = 125°C
Inductive Load Switching Times ton 0.4 0.7 1.5 µs
trr VD = 15V, VCIN = 0 ↔ 15V — 0.15 0.3 µs
tC(on) VCC = 600V, IC = 15A — 0.3 1.0 µs
toff Tj = 125°C — 1.7 2.9 µs
tC(off) — 0.7 1.3 µs
Brake Sector
Collector-Emitter Saturation V oltage VCE(sat) VD = 15V, VCIN = 0V, IC = 10A, — 2.8 3.8 V olts
Tj = 25°C
VD = 15V, VCIN = 0V, IC = 10A, — 2.5 3.5 Volts
Tj = 125°C
Diode Forward V oltage VFM IF = 10A, VD = 15V, VCIN = 5V — 2.5 3.5 Volts
Collector Cutoff Current ICES VCE = VCES, Tj = 25°C——1mA
V
CE = VCES, Tj = 125°C——10mA
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLA T-BASE TYPE
INSULATED PACKAGE
Sep.1998
Thermal Characteristics
Characteristic Symbol Condition Min. T yp. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT — — 1.5 °C/Watt
Rth(j-c)F Each Inverter FWDi — — 4.5 °C/Watt
Rth(c-f)Q Each Brake IGBT — — 3.0 °C/Watt
Rth(c-f)F Each Brake FWDi — — 5.5 °C/Watt
Contact Thermal Resistance Rth(c-f) Case to Fin Per Module, — — 0.044 °C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Supply V oltage VCC Applied across P-N Terminals 0 ~ 800 Volts
VDApplied between VUP1-VUPC, 15 ± 1.5 Volts
VN1-VNC, VVP1-VVPC, VWP1-VWPC
Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts
Input OFF Voltage VCIN(off) UP, VP, WP, UN, VN, WN, Br4.0 ~ VDVolts
PWM Input Frequency fPWM Using Application Circuit 5 ~ 20 kHz
Minimum Dead Time tdead Input Signal ≥ 2.5 µs
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLA T-BASE TYPE
INSULATED P ACKAGE
Sep.1998
Inverter Part
0
1.0
2.0
3.0
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, I
C
, (AMPERES)
SATURATION VOLTAGE V
CE(sat)
, (VOLTS)
05 2510 15 20
V
D
= 15V
V
CIN
= 0V
T
j
= 25
o
C
T
j
= 125
o
C
2.5
1.5
0.5
0
1.0
2.0
3.0
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SUPPLY VOLTAGE, V
D
, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE
V
CE(sat)
, (VOLTS)
01214161820
I
C
= 15A
V
CIN
= 0V
T
T
j
= 25
o
C
T
j
= 125
o
C
2.5
1.5
0.5
0 1.0
0
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
3.0
20
10
2.0
T
j
= 25
o
C
V
CIN
= 0V V
D
= 17V
13
15
10
0
10
1
10
2
10
-1
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIMES, t
on
, t
off
, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
t
on
10
0
10
1
t
off
V
CC
= 600V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
10
0
10
1
10
2
10
-1
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIMES, t
c(on)
, t
c(off)
, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
t
c(on)
10
0
10
1
t
c(off)
V
CC
= 600V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
10
0
10
1
10
2
10
1
COLLECTOR REVERSE CURRENT, -I
C
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (µs)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
10
2
10
3
10
0
10
1
10
2
V
CC
= 600V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
I
rr
t
rr
01
10
0
00
10
1
10
2
DIODE FORWARD CHARACTERISTICS
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR REVERSE CURRENT, -I
C
, (AMPERES)
32
V
D
= 15V
V
CIN
= 15V
T
j
= 25
o
C
T
j
= 125
o
C
60
80
100
120
140
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
SUPPLY VOLTAGE, V
D
, (VOLTS)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
01214161820
T
j
= 25
o
C
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
JUNCTION TEMPERATURE, T
j
, (
o
C)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
80
90
100
110
120
0 20 60 100 140
-20
V
D
= 15V
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLA T -BASE TYPE
INSULATED PACKAGE
Sep.1998
Inverter Part
1.0
1.5
2.0
2.5
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
JUNCTION TEMPERATURE, Tj, (oC)
FAULT OUTPUT PULSE WIDTH, tfo, (ms)
-50 0 50 100 150
VD = 15V
11
12
13
14
15
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
JUNCTION TEMPERATURE, Tj, (oC)
UV TRIP-RESET LEVEL,
UVt, UVr, (VOLTS)
-50 1500 50 100
UVt
UVr
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
101
10-1 100101
100
10-1
10-2
10-3
10-3
00
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 1.5oC/W
10-2
10-3
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 4.5oC/W
10-2
10-3
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLA T-BASE TYPE
INSULATED P ACKAGE
Sep.1998
Brake Part
0
2
4
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
SATURATION VOLTAGE, VCE(sat), (VOLTS)
02 10468
V
D
= 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
1
5
3
012
0
2
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
3
4
6
10
4
VD = 17V 15
Tj = 25oC
VCIN = 0V
8
13
0 0.5 1.0
DIODE FORWARD CHARACTERISTICS
DIODE FORWARD VOLTAGE, VF, (VOLTS)
DIODE FORWARD CURRENT, IF, (AMPERES)
1.5 3.0 2.0 0
10
0
10
1
10
2VD = 15V
VCIN = 15V
T
j
= 25
o
C
T
j
= 125
o
C
2.5
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
10
1
10
-1
10
0
10
1
10
0
10
-1
10
-2
10
-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 3.0oC/W
10
-2
10
-3
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
10
1
10
-1
10
0
10
1
10
0
10
-1
10
-2
10
-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 5.5oC/W
10
-2
10
-3
0
2
4
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
01214161820
1
3
5
T
j
= 25oC
VCIN = 0V
IC = 10A
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLA T-BASE TYPE
INSULATED PACKAGE
