SPD06N80C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in TO252 VDS 800 V RDS(on) 0.9 ID 6 A PG-TO252 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated Type Package Ordering Code Marking SPD06N80C3 PG-TO252 Q67040-S4352 06N80C3 Maximum Ratings, at TC = 25C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 C 6 TC = 100 C 3.8 Pulsed drain current, t p limited by Tjmax ID puls 18 Avalanche energy, single pulse EAS 230 EAR 0.2 Avalanche current, repetitive tAR limited by Tjmax IAR 6 A Gate source voltage VGS 20 V Power dissipation, TC = 25C Ptot 83 W Operating and storage temperature Tj , Tstg -55... +150 C mJ ID=1.2A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax1) ID=6A, V DD=50V Rev. 2.4 Page 1 2008-04-11 SPD06N80C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit VDS = 640 V, ID = 6 A, Tj = 125 C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm 2 cooling area 2) - - 50 - - 260 Soldering temperature, reflow soldering, MSL3 Tsold K/W C 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=6A Values Unit min. typ. max. 800 - - - 870 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=250, VGS=V DS Zero gate voltage drain current I DSS VDS=800V, V GS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.4 RG A Tj=25C, - 0.5 10 Tj=150C - - 100 VGS=20V, V DS=0V - - 100 VGS=10V, ID =3.8A, Tj=25C - 0.78 0.9 Tj=150C - 2.1 - f=1MHz, open Drain - 0.7 - Page 2 nA 2008-04-11 SPD06N80C3 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Symbol gfs Conditions VDS2*ID*R DS(on)max, Values Unit min. typ. max. - 4 - S pF ID=3.8A Input capacitance Ciss VGS=0V, VDS=25V, - 785 - Output capacitance Coss f=1MHz - 390 - Reverse transfer capacitance Crss - 20 - - 22 - - 42 - Effective output capacitance,4) Co(er) VGS=0V, energy related VDS=0V to 480V Effective output capacitance,5) Co(tr) pF time related Turn-on delay time td(on) VDD=400V, VGS=0/10V, - 25 - Rise time tr ID=6A, RG=15, - 15 - Turn-off delay time td(off) Tj=125C - 65 75 Fall time tf - 8 11 - 3.3 - - 14 - - 27 35 - 6 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=640V, ID=6A VDD=640V, ID=6A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=640V, ID=6A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220C, reflow 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.4 Page 3 2008-04-11 SPD06N80C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Inverse diode continuous IS Conditions TC=25C Values Unit min. typ. max. - - 6 - - 18 A forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time t rr VR =400V, IF =IS , - 520 - ns Reverse recovery charge Q rr diF/dt=100A/s - 5 - C Peak reverse recovery current I rrm - 18 - A Peak rate of fall of reverse dirr /dt - 400 - A/s recovery current Typical Transient Thermal Characteristics Value Symbol Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.024 Rth2 Cth1 0.0001172 0.024 Cth2 0.000447 Rth3 0.086 Cth3 0.0006303 Rth4 0.309 Cth4 0.001828 Rth5 0.317 Cth5 0.004786 Rth6 0.112 Cth6 0.046 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.4 Page 4 2008-04-11 SPD06N80C3 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( VDS ) parameter : D = 0 , TC=25C 100 10 2 SPD06N80C3 W A 80 10 1 ID Ptot 70 60 10 0 50 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 40 30 10 -1 20 10 0 0 20 40 60 80 100 120 C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (tp) ID = f (VDS); Tj =25C parameter: D = tp/T parameter: tp = 10 s, VGS 10 1 20 10 20V 10V A K/W 8V 16 0 ID ZthJC 14 10 -1 10 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 7V 12 8 6V 6 4 5V 2 10 -3 -7 10 Rev. 2.4 10 -6 10 -5 10 -4 10 -3 s tp 10 0 0 -1 5 10 15 20 V 30 VDS Page 5 2008-04-11 3 SPD06N80C3 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj =150C RDS(on)=f(ID) parameter: tp = 10 s, VGS parameter: Tj=150C, VGS 5 11 20V 10V 8V A 9 4V RDS(on) 7V 8 ID 7 6V 6V 3.5 6 5.5V 4.5V 3 5 5V 4 5.5V 2.5 4 3 5V 2 4.5V 1 4V 7V 8V 10V 20V 2 0 0 5 10 15 20 1.5 1 0 30 V 2 4 6 8 11 A ID VDS 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter : ID = 3.8 A, VGS = 10 V parameter: tp = 10 s 5.5 SPD06N80C3 20 A 25C 16 4 14 3.5 ID R DS(on) 4.5 12 3 10 2.5 150C 8 2 6 1.5 98% 1 4 typ 2 0.5 0 -60 -20 20 60 100 C 0 0 180 Tj Rev. 2.4 Page 6 2 4 6 8 10 12 14 16 V 20 VGS 2008-04-11 SPD06N80C3 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (Q Gate) parameter: ID = 6 A pulsed IF = f (VSD) 16 parameter: Tj , tp = 10 s 10 2 SPD06N80C3 V A 0.2 VDS max 10 1 10 0.8 VDS max IF VGS 12 SPD06N80C3 8 6 10 0 Tj = 25 C typ 4 Tj = 150 C typ Tj = 25 C (98%) 2 0 0 Tj = 150 C (98%) 5 10 15 20 25 30 40 nC 35 10 -1 0 50 0.4 0.8 1.2 1.6 2 2.4 V QGate 3 VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj 150 C par.: ID = 1.2 A, VDD = 50 V 250 6 mJ A E AS IAR 200 4 175 150 125 3 100 2 75 TJ(Start) = 25C 50 1 TJ(Start) = 125C 0 -3 10 Rev. 2.4 10 -2 10 -1 10 0 25 10 1 10 2 s 10 tAR 4 0 25 50 75 100 150 C Tj Page 7 2008-04-11 SPD06N80C3 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: EAR =0.2mJ 980 SPD06N80C3 200 V W 160 920 900 PAR V(BR)DSS 940 880 860 140 120 100 840 820 80 800 60 780 40 760 20 740 720 -60 -20 20 60 C 100 0 4 10 180 10 5 10 Hz Tj f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: VGS =0V, f=1 MHz 10 4 7 pF J Ciss C E oss 10 3 5 4 10 2 3 Coss 2 10 1 Crss 10 0 0 Rev. 2.4 100 200 1 300 400 500 600 0 0 800 V VDS Page 8 100 200 300 400 500 600 800 V VDS 2008-04-11 6 SPD06N80C3 Definition of diodes switching characteristics Rev. 2.4 Page 9 2008-04-11 SPD06N80C3 PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK) Rev. 2.4 Page 10 2008-04-11 SPD06N80C3 Rev. 2.4 Page 11 2008-04-11