2008-04-11
Rev. 2.4 Page 1
SPD06N80C3
Cool MOS™ Power Transistor VDS 800 V
RDS
(
on
)
0.9 Ω
ID6 A
Feature
• New revolutionary high voltage technology
• Worldwide best RDS
(
on
)
in TO252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dtrated
PG-TO252
Type Package Ordering Code
SPD06N80C3 PG-TO252 Q67040-S4352
Marking
06N80C3
Maximum Ratings, at TC = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
6
3.8
A
Pulsed drain current, t
p
limited by T
j
max ID
p
uls 18
Avalanche energy, single pulse
ID=1.2A, VDD=50V
EAS 230 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=6A, VDD=50V
EAR 0.2
Avalanche current, repetitive t
A
R limited by T
j
max I
A
R6 A
Gate source voltage VGS ±20 V
Power dissipation, TC = 25°C Ptot 83 W
Operating and storage temperature T
j
,Tst
g
-55... +150 °C
2008-04-11
Rev. 2.4 Page 2
SPD06N80C3
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 640 V, ID = 6 A, Tj = 125 °C
dv/dt50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1.5 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
RthJA
-
-
-
-
75
50
Soldering temperature, reflow soldering, MSL3
1.6 mm (0.063 in.) from case for 10s 3)
Tsold - - 260 °C
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 800 - - V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=6A - 870 -
Gate threshold voltage VGS
(
th
)
ID=250µΑ,VGS=VDS 2.1 3 3.9
Zero gate voltage drain current IDSS VDS=800V, VGS=0V,
Tj=25°C,
Tj=150°C
-
-
0.5
-
10
100
µA
Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=3.8A,
Tj=25°C
Tj=150°C
-
-
0.78
2.1
0.9
-
Ω
Gate input resistance RGf=1MHz, open Drain - 0.7 -
2008-04-11
Rev. 2.4 Page 3
SPD06N80C3
Electrical Characteristics , at T
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=3.8A
- 4 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 785 - pF
Output capacitance Coss - 390 -
Reverse transfer capacitance Crss - 20 -
Effective output capacitance,4)
energy related
Co(er) VGS=0V,
VDS=0V to 480V
- 22 - pF
Effective output capacitance,5)
time related
Co(tr) - 42 -
Turn-on delay time td(on) VDD=400V, VGS=0/10V,
ID=6A, RG=15Ω,
Tj=125°C
- 25 - ns
Rise time tr- 15 -
Turn-off delay time td(off) - 65 75
Fall time tf- 8 11
Gate Charge Characteristics
Gate to source charge Qgs VDD=640V, ID=6A - 3.3 - nC
Gate to drain charge Qgd - 14 -
Gate charge total QgVDD=640V, ID=6A,
VGS=0 to 10V
- 27 35
Gate plateau voltage V
(
plateau
)
VDD=640V, ID=6A - 6 - V
1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3Soldering temperature for TO-263: 220°C, reflow
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2008-04-11
Rev. 2.4 Page 4
SPD06N80C3
Electrical Characteristics, at T
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous
forward current
ISTC=25°C - - 6 A
Inverse diode direct current,
pulsed ISM - - 18
Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V
Reverse recovery time trr VR=400V, IF=IS ,
diF/dt=100A/µs
- 520 - ns
Reverse recovery charge Qrr - 5 - µC
Peak reverse recovery current Irrm - 18 - A
Peak rate of fall of reverse
recovery current
dirr/dt - 400 - A/µs
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
Rth1 0.024 K/W
Rth2 0.024
Rth3 0.086
Rth4 0.309
Rth5 0.317
Rth6 0.112
Thermal capacitance
Cth1 0.0001172 Ws/K
Cth2 0.000447
Cth3 0.0006303
Cth4 0.001828
Cth5 0.004786
Cth6 0.046
External Heatsink
TjTcase
Tamb
Cth1 Cth2
Rth1 Rth,n
Cth,n
Ptot (t)
2008-04-11
Rev. 2.4 Page 5
SPD06N80C3
1 Power dissipation
Ptot = f(TC)
0 20 40 60 80 100 120 °C 160
TC
0
10
20
30
40
50
60
70
80
W
100 SPD06N80C3
Ptot
2 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TC=25°C
10 010 110 210 3
V
VDS
-2
10
-1
10
0
10
1
10
2
10
A
ID
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Transient thermal impedance
ZthJC = f(tp)
parameter: D=tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -1
s
tp
-3
10
-2
10
-1
10
0
10
1
10
K/W
ZthJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp= 10 µs, VGS
0 5 10 15 20 V 30
VDS
0
2
4
6
8
10
12
14
16
A
20
ID
5V
6V
7V
8V
20V
10V
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Rev. 2.4 Page 6
SPD06N80C3
5 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp= 10 µs, VGS
0 5 10 15 20 V 30
VDS
0
1
2
3
4
5
6
7
8
9
A
11
ID
4V
4.5V
5V
5.5V
6V
7V
20V
10V
8V
6 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
02468 A 11
ID
1
1.5
2
2.5
3
3.5
4
Ω
5
RDS(on)
4V
4.5V
5V
5.5V
6V
7V
8V
10V
20V
7 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = 3.8 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Ω
5.5 SPD06N80C3
RDS(on)
typ
98%
8 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0 2 4 6 8 10 12 14 16 V 20
VGS
0
2
4
6
8
10
12
14
16
A
20
ID
25°C
150°C
2008-04-11
Rev. 2.4 Page 7
SPD06N80C3
9 Typ. gate charge
VGS =f (QGate)
parameter: ID = 6 A pulsed
0 5 10 15 20 25 30 35 40 nC 50
QGate
0
2
4
6
8
10
12
V
16 SPD06N80C3
VGS
0.2 VDS max
0.8 VDS max
10 Forward characteristics of body diode
IF = f (VSD)
parameter: T
j
, tp= 10 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-1
10
0
10
1
10
2
10
A
SPD06N80C3
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
11 Avalanche SOA
IAR = f (tAR)
par.: Tj≤ 150 °C
10 -3 10 -2 10 -1 10 010 110 210 4
µs
tAR
0
1
2
3
4
A
6
IAR
TJ(Start) = 25°C
TJ(Start) = 125°C
12 Avalanche energy
EAS = f(Tj)
par.: ID = 1.2 A, VDD = 50 V
25 50 75 100 °C 150
Tj
0
25
50
75
100
125
150
175
200
mJ
250
EAS
2008-04-11
Rev. 2.4 Page 8
SPD06N80C3
13 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
720
740
760
780
800
820
840
860
880
900
920
940
V
980 SPD06N80C3
V(BR)DSS
14 Avalanche power losses
PAR = f (f )
parameter: EAR=0.2mJ
10 410 510 6
Hz
f
0
20
40
60
80
100
120
140
160
W
200
PAR
15 Typ. capacitances
C = f(VDS)
parameter: VGS=0V, f=1 MHz
0 100 200 300 400 500 600 V 800
VDS
0
10
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
16 Typ. Coss stored energy
Eoss=f(VDS)
0 100 200 300 400 500 600 V 800
VDS
0
1
2
3
4
5
µJ
7
Eoss
2008-04-11
Rev. 2.4 Page 9
SPD06N80C3
Definition of diodes switching characteristics
2008-04-11
Rev. 2.4 Page 10
SPD06N80C3
PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK)
2008-04-11
Rev. 2.4 Page 11
SPD06N80C3