Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
NPN SILICON GERMANIUM RF TRANSISTOR
NESG250134
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (800 mW)
3-PIN POWER MINIMOLD (34 PACKAGE)
Document No. PU10422EJ02V0DS (2nd edition)
Date Published July 2004 CP(K)
The mark shows major revised points.
FEATURES
• This product is suitable for medium output power (800 mW) amplification
PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz
PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz
• MSG (Maximum Stable Gain) = 23 dB TYP., @ VCE = 3.6 V, Ic = 100 mA, f = 460 MHz
• Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 20 V
• 3-pin power minimold (34 package)
ORDERING INFORMATION
• 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Collector to Base Voltage
Collector to Emitter Voltage
Note Mounted on 34.2 cm2 0.8 mm (t) glass epoxy PWB