MIL SPECS oou0 Me U0001eS 9031395e 5 MENILS A WIL -S=19600/200 14 May Le SUPERSED (a + MIL ~$=19600/203C 3 March 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, THYRISTORS, REVERSE LOCKING, SILICON, TYPES 2N2024, 2N2025, 2NZ2027, 2N2029, 2NZOX), JAN, JANTX, AND JANTXY This spec{fication is approved for use by a1] Oepart- ments and Agencies of the Department of Oafense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon thyrtstors. Three levels of product assurance are provided for each device type as specified in MIL-S~19500. 1.2 Physical dimensions. See figure 1 (TO-209AC). 1.3 Maximum ratings. I Trs [-Vax It F TPacay Stud [Qperating! T Ter I Tay) t , { m w a a | acav) torquelalti tude. (juhction sr6 Rave ! + = | | tempera- | | ! ture) { T I A de A(pk) | V(pk) ((pk) IA(pk) | Woof oW inch- | ma Hg 6 Ct Stew | | (t_cycle) | Ipoun 19 1000 5 | 10 2 | 0.45 ! 150 | 15 {-40 ta = [40 to 0.4 | | Po ee lf This average on-state current is for a maximum allowable case temperature of 87C and 180 electrical dagreas of half sine wave conduction, For other operating conditions see figure 2, 2/ Surge rating is nonrecurrent and applies only with device in the conducting state. 4,3,1 Individual ratings, [ Yo(rms) = 'ram 17 Yorm 17 TYasw 27 I I Types . f ! Vas {pk) (pk) (Cpk) I { : : | { oN2024 35 60 50 75 | | 2n2025 70 100 100 150 i | 2N2027 140 200 | 200 { 300 | | 2N2029 210 x0 i wo | 400 {| . | 2N2036,. 290 + 400 400 600 1/ Values apply for zero or negative gate voltage (Yq). 2/ Transtent inverse voltage, nonrecurrent, t = 5.0 ms max. luse in gmpray tng this document should be addrassed to: Space and Naval Warfare Systems Command, [ATTH; SPAWAR 8111, Washington, 0 20363 by using the self-addressed Standardization Document Beneficial comments (recommendations, additions, delettons) and any pertinent data which may b on ( [improvement Proposal (DD Form 1426) appearing at the end of thts documant or by letter, | AMSC N/A FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unl tm{ted.Mii ++ 19500/ 20.30 MIL SPECS ooo Me 0000125 0031353 7 MENILS 1.4 Primary electrical characteristics at Tq = 25C (unless otherwise specified), 1 limits Wry i7 lly i/ idv/dt 17 [Vey 17 {I i/ [ ty 1/ | | HSE ava 7 Wer I~ Ter 2b Ite Stas*c | i | | | | { | | dT Vi pk} | mA_de V/us V_de mA de us | [Minimum | --- f --. | 9g) g28 ay fea aa | Maximum 1.9 75 ase 3.0 F/ ea) 150 lf See conditions column for the applicable group A test. 2/ This value also applies at Ta = *129C, 3/ This value also applies at Ta = -40C. 2. APPLICABLE OOCUMENTS 2.1 Government documents, 2.1.1 Specification and standard, The following specification and standard form a part of this spect feation to the extant spcified herein. Unless otherwise specified, the issues of these documents shall be those listed in the {ssue of the Department of Oafense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation, SPECIFICATION MILITARY MIL=S$-19500 - Semiconductor Devices, General Specification for, STANDARD MILITARY MIL-$T0-750 - Test Methods for Semiconductor Devices, (Coptes of specification and Standard required by contractors in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.) 2.2 Order of precedence. In the avent of a conflict batwaen the text of this specification and the refereandes eT ted hereta (except for assoctated detail shecifications, specification sheets or MS standards}, the text of this specification shall take precedence. Nothing in this specification, howaver, shall supersede applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Oetatl specification. The individual item requirements shall be in accordance with MIL5-19600, and as spec tFied herein, 3.2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be-ag specified n ATL S130 3.3 Dasign, construction, and physical dimensions. The design, construction, and physical dimensions shat] be@-as speqitiad in MILSS=T3G0 et FTrqur Therein. 3.4 Marking. Marking shall be {n accordance with MiL-S-19S00, except that the country of origin may be omitted at the option of the manufacturer. 4. QUALITY ASSURANCE PROVISIONS 4,1 Samp Ling and inspection, Sampling and inspection shall be in accordance with MIL-S-19500, and as specifie rein. 4.2 Qualification tnspectton, Qualification inspection shall be in accordance with MIL-5-19500, and as specifiad herein,ee - MM 0000225 0031354 9 MMMILS MIL SPECS ooo MIL -$-1950G/2039: | Measurements OT Screen (see table I] . of MIL~5~19500) WANTX and JANTXY levels { ( | { | t J { | | | 3 TLow = -40C: Thigh = *150C . . | 4 2500 g's (leads removed or secured) { 7 | 9 Not required T 10 (Not required | f l it Trai Topas Yori Vans and Igry Test condition A (ac blocki Ita ) | est condi an ac ocKing vo ens I 12 [Tc = 146": Vpn = "pam q [ ((see 1.3.2), Vow = ORM (See 1.3.1); Rex = = - I 13 {Subgroup 2 of table 1 herein, Alm] = 100% of initial value or 1 mA(pk), whichever is greater, | alReMl 100% of {nitial value [ | or 1 mA(pk), whichever is greater, ; 4.3 Screening (JANTX and JANTXY levels only), Screening shall be in accordance with MIL-$.19500 (table and 48 specified herein. & following elactrical measurements shall be made in accordance with table [ herein, Devices that exceed the limits of table | herein shall not be acceptable, 4.4 Quality conformance inspection. Quality conformance inspection shall be in accordance with MIL-~Sa1 and as specified herein. Ali testing, shall be conducted on devices priar tO attachment of external leads. After attachment of leads, the tests of subgroups 1 and 2 of ta lea I shall be performed prior to shipment, : 4.4.1 Group A ing ection. Group A inspection shall be conducted in accordance with MIL-$-19500 and table I hretn. End potnt electrical measurements shall be in accordance with the applicable steps of table IV herein. 4.4.2 Group 8 inspection. Group B inspection shall be conducted in accordance with the conditions spectffed for su group testing in table [vb of MIL~S-19500, and table I] herein. Electrical measurements shall be tn accordance with the a Plicabla steps of tabla IV herein. Subgroups 3 and 6 of fable TI shall be performed an 4 sample from the Sublot containing the highest voltage rated devices in @ lot, 7 4.4.3 Group inspection. Group inspection shall be conducted in accordance with the conditions specified or subgroup testing in table of MIL-S-19500, and table ILI herein, Electrical measurements shall be in accordance with the applicable Steps of table IV herein, Subgroups 5 and 6 of table If shall be performed on 4 sample from the sublot cantaining the highest voltage rated devices tn the lot to accapt that typeand all lower Voltage rated devices, In the event subsequent lots contain a higher vol tage type, that type shall be subjected to the tests of Subgroups 5 and 6 prior to the acceptance of t e lot, MIL SPECS oo0 ME 0000125 0031355 0 MWMILS - MIL -S-19800/203p , 4,5, Methods of inspection. Methods of inspection shall be as specified in appropriate tables and S follows: 4.5.1 Intermittent life test. The thyristors shal? be Operated in a Single phase circuit 43 shown on figure 3 wit *9 degree Conduction angle. Cel] stud temperature shall be maintained at 108 #6C as measured with a thermocouple rigidly attached to 4 cel] hex, Peak input voltage from a 60 Hz sinusoidal blocking voltage power supply shall be equat to rated blocking voltage. Average forward current shall be 50 ampere per cell from the 60 Hz sinusoidal forward current supply. The blocking voltage supply shall be phase delayed 90 electrical degrees with respect to the Forward current supply in order to impose both forward and reverse blocking duty on the cells under test, The forward ists of a low voltage transformer with a means of adjusting the Secondary voltage. he blocking voltage supply consists of a high voltage transformer with a synchronous Switch connected in series with one of the secondary transforter leads. The Synchronous switch { set ta conduct for 0 #5 electrical degrees conduction during the {nterval when terminal A 18 negative with respect to erminal C. A minimum of 2 and a maximum of 5 electrical degrees off time shai] be allowed after orward current conduction before blockin Voltage {s applted by the synchronous switch. The gate firing pulses shal] be delfvered from a f ring circuit with an open circuit voltage of 7,0 3.0 volts and a short circuit current of 1,2 #0,8 ampres. The gate pulse average power input shal] not exceed Q.5 watt. The gate firing supply shall be in phase with the cell forward current supply, 5. PACKAGING .1 Packaging requirements. The requirements for packaging shal] be in accordance with MIL-5-19500, 6G. WOTES 6.1 Notes. The notes spectfted in MIL~S-=19500 ara applicable to this specification, 6.2 Changes from previous issue. Astertsks are not used in this revision to Identify changes with respect to the previous issue, due to the extensiveness of the changes.M! 0000125 0031356 2 MNILS | MIL~$-19500/2030 MIL SPECS ooo TABLE I, Group A inspection, T T _MIL=3TO= 750 CTPD Cintts 7 ; | | Inspection Method Conditions JANTX Symbal Min [| Max | unit | I JANTXY i { | I T T Subgroup 1 | { {wi suat and mechanical | 2071 | I | | { { | tnspections { | ( i | I | | | | i | | | Subgroup 2 | | ! 5 | | | Reverse blocking 4211 (AC mathod, bias condition 0, Ippmt of --= 2 [mACpk) | current lf = 60 Hz, | | | IVR = Vpay (see 1.3.1) | Forward blocking 4206 |AC method, btas condition D, TpRMy | ==- | 2 mA(pk ) current lf = 60 Hz, | { | Vo = Yoram (see 1.3.1) | | [Gate-trigger voltage | 4221 IVs = 6.0 V de, Yer1 =-((0.25 [3.0 I de and gate-trigger IRu = 10 obms, lsty [--= | 70 [mA de current |Re = 25 ohms maximum | | | Forward "on" voltage 4226 |Itq = 220 A(pk) (putse) f s. [2.9 V(pk) $ pulse width = 8.3 ms maxtaum, { | inuty cycle = 2% maximum | | Hatding current 4202 [Yan = 22.6 V de, ly [--- | 75 |mA de | [Ipy zsfA de, . { 1 | Trg = 500 mA de, | l bias condition D, | i | l |Gate-trigger source | } ! | ivoltage = 6 de, { { | | | tee PoE IReverse gate current | 4219 WG = 5.0 de ! [lq | --- [-300 Ima de [ Subgroup 3 | | } 5 | Hf gh-temperature 4211 JAC method, Tr 180C | I ws- [15 tmA(pk) | Peverse blocking Ibias condi tin p, f a 60 Hz, | RAM2 | | current Yrm = Van (see 1.3.1) i High-temperature far- | 4206 JAC method, Tc = 180C, Topm2 s-- [| 18 [mACpk) | ward blocking bfas condition 0, f x 60 Hz | . | current Yom = Yorm (see 1,341) | | | [Gate-trigger voltage 4221 iTe = 150C, i YeT2 10.25 | --. [ de | Re-= 26 ohms maximum, - | J Ry =l ka, I | Vo = Yoru {sea 1.3.1) [ |Low-temperature reverse] 4211 lac method, Te = =40C, { | teas | --* 2 |mA(pk) | blocking current bias condition D, f= 60 Hz, | { | Vom = Ypam (see 1.3.1) ! | [Low-temperature for- | 4206 JAC method, Te = -40"C, I Torna 7. 2 |mACpk) | ward blocking | bias condition 0, f = 60 Hz | | { | current Nom = Vorm (see 1.3.1) { | { | {Low-temperature gate- | 4221 Vo = 6.0 de, { Ver3 0.25 (3.0 [Vide | | trigger voltage and | Ru = 10 ohms, | | gate-trigger current | Re = 25 ohms maximum, | lara --~ 1130 [mA de | | IT = -40C | |M@ 0000125 0031357 4 MMMILS ee es ce, cee eres fn ee ne a roe MIL SPECS o00 MIL -$-19500/2030 TABLE [, Group A inspection -Continued, TT ATC STI- 740 ~{ CTPD Lintts . f | Inspection Method| Cond{ttans | JANTX | Sytnbo} | Min [| Max [ Unit | in | | JANTXY | { | | | | | _f I | | { I | ] 1 1 Subgroups 4 and 5 { | | | { { i | [Not applicable ! | i | | | | | | | Subgroup 6 | { 10 | ! | | i [Surge currant | 4066 [Itsy = 1000 A(pk) (1/2 sine | | { wave), 10 Surges at 1 per minute, gr, RM =, | { (see 1.3.2), Te a tpotce | f of | | [surge duration = 7 ms minimum | | | | | llectrical measurements | iSee table ly, | | | | | {steps 1, 2, 3, and 4 | Subgroup 7 | | 10 | lExpotential rate of | 4231 ITc = 150C, | Vp { | voltage rise I [bias conditfon 0, I | I | Ce .05 uF, | [ - | | IRL = 100 ohms, i | I | lrepetition rate = 60 pps, | | { | | | |test duration 15 5, { | { | { { Idv/dt = 20 V/us ! , | 2N2024 | Y $0 V de 4S ewe V de 2N2026 | Van = 160 4G | [oe fr: [ 4s 2N2027 | AA 3 200 V de | 1190 | ==} de 2N2029 | Van a 300 V de * | 1280 [wee LV de |2N2020 ! Yaa = 400 de 1370 [= | V de Circuit-commutated | 4224 (To = 145C ty ~m= | 150 | us turn-off time i It = 50 Alpk), | ton = 100 #50 ys, | | ! ddt = 25 A/us maximum, | | Vem = V maxtmum | (eee BRM, | | | | rev. voltage at | | l | ty = 15 minimum, i | ! | repetition rate = 60 pps | | | yx tint, vide . 20 V/us, { = se 1, 1) l gute bigs tcondition, _ | | | gate source voltage = 0, | gate source resistance ( | | | 100 ohms maximum { Gate-controlled turn- ( 4223 Yaa = SOV de, Iton | ate | 15 | us | on time (2N2031 | Itm = 50 A(pk), i | | only} Vag = 10 V de, | i i | tpi = 11 us maximum, | | { | { [Ra = 25 ohms maximum, l I | I | 1 { Forward current pulse + 4/ys { | | [ < di 200A/u5 | | | | {dt | | { | I l | | i { { { | | { [ IMIL SPECS 000 M@ 0000125 0031358 & MEMILS MIL--19500/2030 TABLE II, Group 8 inspecuion. Electrical measurements | I MIL-<STO=750 I [ | Inspection | LTPD { Rethad Condl tions | : I Subgroup 1 | is oT | { | | [Resistance ta solvents | 1022 [ | | { | Subgroup 2 | | i to | I | | | Thermal shock (temperature cycling) { 1061 iTest condition Fy, except | | ITLow # -40 [Hermetic seal | 1072 | | | | Fine teak | i { { Gross leak | | | Electrica) measurements {See table IV, steps 1, 2, 3, and | | Subgroup 3 ! { | 5 | latocking life [a+ [Test conditions in accordance with| | | { IMIL-STD-750, method 1040, test | | { isondi tian A (ac blocking vo} tage); | | | Ivey ate W (see 1d 1) RM = see awe ; | { Von # Vong (see 1.3.1): [ | | [Rex = = llectrtcal measurement {See table IV, steps 1, 2, 3, and | | i [ | | | | Subgroup 4 { ! ! |[Decap internal visual design verification 2075 | [1 device | { I 1/0 fajlure | { | i Ifor each | | | | lot { | | | | Subgroup 5 | 20 | [Thermal resistance 4081 Iv] = 50,4 de, | | | Tg = 125C maximum, | | | IT2 = lowest level which assures [ | | orp lete turn on (approximately | lA de . | Rago = 0.4 "G/H maxtmum | | Subgroup 6 | | 10 [High-temperature life (non-operating} 1032 Ta = 160C | | | | | ! See table IV, Steps 1, 2, 3, and 4 M@ 0000325 00313559 & MHNILS nit SPECS oog MIL -$-19500/2030 TABLE f11, Group C inspection. Internitttent operation life 1036 Iton = 50 minutes, l | Subgroup 6 | ltofr = 10 minutes, see 4.5.1 | Electrical measurements {See table IV, steps 1, 2, 3, and 4 T MIL=STD-750 I " T | Inspection { | LTPD | j athe Condit cfs T | a ! | Tr T t T ! Subgroup 1 | | 1 15 { I | | {Phystcal dimenstons 2066 [See figure | | | | | { | Subgroup 2 | | { lo | | { | Therma) shock (glass strain) | 1056 |Test condition 8 | [ | { Terminal strength stud torque | 2036 [Test condition 02 torque = 180 | | | | { {nch-pounds, t = 1S seconds | ! | | min{mum [hermetic $eal { 1071 | | { | Fine leak { 1 | { | Gross leak | IMotsture resistance idl {Ont t inittal conditioning [External visual { 2071 | | I { | i Electrical measurements | {See table IY, steps 1, 2, 3, and | | { Subgroup 3 | | | lo | | shock { 2016 [8 blows each Y, Yo. 2], axes} { | | 1500 g's, 1.0 ms ! Vibration, variable frequency { 2056 [10 y's, 100 to 1000 Hz, leads | i [secured or removed i | lconstant acceleration 2006 ~ {2800 g's, orientations xX), Yi Zi | Electrical measurements {See table IV, steps 1, 2, 3, and | l Subgroup 4 | 1 | [sate atmosphere (corrosion) | 104) t | | | ] { Subgroup 5 | | 15 ] I | | Barometric pressure (reduced) 1 1001 [15 mm Kg, Vay = Vearm (see 1.3,1), | (Yom = Yorm (see 1.3.1), { [es 60 | | | 4 = 10 | { { I | |MH 0000125 0031360 4 MEMILS. MIL ~3-19500/2039 MIL SPECS ooo TABLE LY. Groups A, 8, and c, Outy cyele 2g maximum [ . . . 7 Stepi Inspection MIL-STO~780 - Symbo] binits | " hethiod Conditions [ata Tmax I ! { ( t | L, [Reverse blocking current ! 421) ac method, bias condition 0, Term [=== | fa Hz, { | | RM * Ver (see 13,1) | | 2, {Forward blocking current 4206 jac method, bias condition D 'Toamy {>> = z, | You . YoRM (see 1.3.2) | | 1 3. [Gate-trigger voltage and | 4221 [Yo = 6.0 de, Wert 10,25] 3 [ | gate-trigger current | [RE = 10 ohms, llery laee | | |Re = 25 ohms maximum | | 4. [Forward "on"! voltage | 4226 [1, 220 Nek) {pul se), [Ving f--~ {1,9 | {fe putse width 8.3 ms maximum, | | | { | i | | | | | | |MIL SPECS MIL+S-195997293p SEE NOTE 3 F ono 020 140 1 SEE NOTE 3 10 1650 MAX ,088 qq ! 7 } J | ~ | _L. rs ; pf .325 MAX ie tT . t 425 reo GAY 7.680 250 ead WHITE 000 6,512 peed 6.075 fos 1.090 DIA L750 . MAX 60 TT fir yas | Lf f searing pLane ; 435 827 t e (425 DIA [797 ot i t | A so-20 UNF-2A NOTES: 1. Complete threads to extend within 2,60 (63.50 mm) threads of seat 2, Maximum piteh dfam +4675 (11.87 FED-ST0-H28, Pl, 3, Angular orfentation 000 M@@ 0000125 0031361 & MENILS mm) raferen 1 of Lerminal {s optional, 4. A chamber ar undercut on one ar both ends of hex portions fs optional, 5. Oimenstons are in inches. 6. This auxitttary cathode | Of stray signals which might trt of these ter ead may be cu eter Of plated threads shal} ba hasi pitch dtaseter ca. (Screw Thread Standard minals ts undefined, qger the thyristor. 7. Metric equivalents are gtven for general {nformation only. FIGURE 1. Oimenstons of eN2029 and 2N2 controlled rectifier 030, to-94 outtine, t off ff not required far Inches 020 040 . 055 ll 149 +150 .170 -250 -300 .310 +325 350 425 435 .50 . 666 +797 827 1.000 1.03] 1.062 1.125 "1.750 6.075 G.512 7.000 7.650 nj plane, S far Federal Sarvices) Square or radius end shielding mm Ypes @N2024, 2N20265, eX2027,MIL SPECS O00 M 00001e5 00313b2 MMILS | MIL-$-19500/2n3p 160 150 140 7 /f 130 Ota an 1g CONDUCTION 1 20 ANGLE 110 100 90 80 70 60 MAXIMUM ALLOWABLE $TUD TEMPERATURE 50 FOR SINUSOIDAL GURRENT WAVEFORM, 4g OC, 10, 30, CIRGUITS RESISTIVE 5 OR INDUCTIVE Load, S0, TO 400 Hz, 3 20 10 MAX IMUM. ALLOWABLE STUD TEMPERATURE - c 10 20 30 40 50 60 70 80 90 100 110 129 AVERAGE FORWARD CURRENT - AMPERES FIGURE 2. Maximum allowable stud temperature, R . pao ann 9 A Omg og | R { Leap A poor pm 4 FORWARD BLOCKING CURRENT R R R VOLTAGE SUPPLY Te TT SUPPLY Cc tt = 0 G ESISTOR R IS FOR EQUAL CURRENT DISTRIBUTION BETWEEN PARALLELEO CELLS, APPROXIMATELY 0.005 OHM FIGURE 3, Gaste tase circutt for intermittent life test. iMIL SPECS Cugtodiang: my - Navy = Ef Alr Foree - 17 Review activities: Army = AR, MI Air Force ~ 11, 19, 85, 99 NASA - NA User activities: Army = SM Navy - AS, cG, MC, os, SH 000 Mm 0000125 0031363 T MMNILS MIL~5-19500/2030 12 Preparing activity: Navy - C Agent: OLA ~ ES (Project 5961-1047)