DS99249(10/04)
Features
• International standard package
• Guaranteed Short Circuit SOA
capability
• Low VCE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
IXSH 30N60B2D1
IXST 30N60B2D1
High Speed IGBT
with Diode
Short Circuit SOA Capability
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC= 25°C48A
IC110 TC= 110°C30A
IF(110) 28 A
ICM TC= 25°C, 1 ms 90 A
SSOA VGE= 15 V, TJ = 125°C, RG = 10Ω ICM = 48 A
(RBSOA) Clamped inductive load @ 0.8 VCES
tSC VGE = 15 V, VCE = 360 V, T J = 125°C 10µs
(SCSOA) RG = 10 Ω, non repetitive
PCTC= 25°C 250 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Weight TO-247 6 g
TO-268 5 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s 2 60 °C
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE(th) IC= 750 µA, VCE = VGE 4.0 7.0 V
ICES VCE = VCES 150 µA
VGE = 0 V 1 mA
IGES VCE = 0 V, VGE = ± 20 V ± 100 nA
VCE(sat) IC= 24A, VGE = 15 V 2.5 V
Preliminary Data Sheet
VCES = 600 V
IC25 = 48 A
VCE(sat) = 2.5 V
G = Gate C = Collector
E = Emitter TAB = Collector
TO-247 (IXSH)
© 2004 IXYS All rights reserved
TO-268 (IXST)
GEC (TAB)
GCEC (TAB)
IXSH 30N60B2D1
IXST 30N60B2D1
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VF IF = 30A, VGE = 0 V TJ =150°C 1.6 V
2.5 V
IRM IF = 50A, VGE = 0 V, -diF/dt = 100 A/µs TJ = 100°C 2.0 2.5 A
trr VR = 100 V TJ = 100°C 150 ns
trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V 30 ns
RthJC 0.9 K/W
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = 24A; VCE = 10 V, Note 1 7.0 12.0 S
Cies 1220 pF
Coes VCE = 25 V, VGE = 0 V 110 pF
f = 1 M Hz 20N60B2D1 140 p F
Cres 42 pF
Qg50 nC
Qge IC = 24A, VGE = 15 V, VCE = 0.5 VCES 23 nC
Qgc 15 nC
td(on) 30 ns
tri 30 ns
td(off) 130 280 ns
tfi 140 300 ns
Eoff 0.55 1.0 mJ
td(on) 30 ns
tri 50 ns
Eon 20N60B2 0.32 mJ
20N60B2D1 0.82 mJ
td(off) 202 ns
tfi 234 ns
Eoff 1.18 mJ
RthJC 0.50 K/W
RthCS 0.21 K/W
Inductive load, TJ = 25°°
°°
°C
IC = 24A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
Switching times may increase for VCE
(Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°°
°°
°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
Switching times may increase for
VCE (Clamp) > 0.8 • VCES, higher TJ
or increased RG
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 (IXSH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
Terminals: 1 - Gate 2 - Drain
1 2 3
TO-268 (IXST) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
IXSH 30N60B2D1
IXST 30N60B2D1
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
20
40
60
80
100
120
0 2 4 6 8 10 12 14 16 18 2 0
V
C E
- Volts
I
C
- Ampe res
V
GE
= 1 7V
9V
11V
13V
15V
Fig. 3. Output Characteristics
@ 125
º
C
0
10
20
30
40
50
60
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
CE
- Volts
I
C
- Amp eres
V
GE
= 1 7V
9V
7V
11V
13V
15V
Fig. 1. Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
0.511.522.533.544.5
V
C E
- Volts
I
C
- Amp eres
V
GE
= 1 7V
9V
11V
13V
15V
Fig. 4. Dependence of V
CE(sat)
on
Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (sat)
- Normali z ed
I
C
= 2 4A
I
C
= 1 2A
V
GE
= 1 5V
I
C
= 4 8A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
1
2
3
4
5
6
7
9 10111213141516171819
V
G E
- Volts
V
C E
- Vo l t s
T
J
= 25
º
C
I
C
= 48A
24A
12A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
110
6 8 10 12 14 16 18
V
G E
- Volts
I
C
- Amp eres
T
J
= 1 25
º
C
25
º
C
-40
º
C
IXSH 30N60B2D1
IXST 30N60B2D1
Fi g. 7. Transconductance
0
2
4
6
8
10
12
14
16
18
0 20 40 60 80 100 120
I
C
- Amperes
g
f s
- Siemens
T
J
= -4 0
º
C
25
º
C
125
º
C
Fig . 8. Dependence of Turn-off
Energy Loss on R
G
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 102030405060708090100
R G
- Ohms
E o f f - m illiJoules
I
C
= 12A
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 400V I
C
= 24A
I
C
= 48A
Fi g. 9. Dependenc e of Turn-Off
Energy Loss on I
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
10 15 20 25 30 35 40 45 50
I
C
- Amp eres
E
o f f
- M illiJoules
R
G
= 5Ω
V
GE
= 15V
V
CE
= 400V
T
J
= 12 5
º
C
T
J
= 25
º
C
Fi g. 10. Dependenc e of Turn-off
Energy Loss on Temperat ure
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
E o f f - m illiJoules
I
C
= 48A
R
G
= 5Ω
V
GE
= 15V
V
CE
= 400V
I
C
= 24A
I
C
= 1 2A
Fig. 1 1. Dependence of Turn-off
Switc hing Time on R
G
150
200
250
300
350
400
450
500
550
0 102030405060708090100
R
G
- Ohms
Sw itching Time - nanoseconds
I
C
= 12A
t
d(off)
t
fi
- - - - - -
T
J
= 125ºC
V
GE
= 15V
V
CE
= 400V
I
C
= 24A I
C
= 48A
I
C
= 12A
Fi g. 12. Dependenc e of Turn-off
S witching Time
on I
C
100
120
140
160
180
200
220
240
260
10 15 20 25 30 35 40 45 50
I
C
- Amp eres
Switching Tim e - nanoseconds
t
d(off)
t
fi
- - - - - -
R
G
= 5Ω
V
GE
= 15V
V
CE
= 400V
T
J
= 125
º
C
T
J
= 25
º
C
IXSH 30N60B2D1
IXST 30N60B2D1
Fig. 14. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50 55
Q
G
- nanoCoulombs
V
G E
- Vo l ts
V
CE
= 3 00V
I
C
= 24A
I
G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Vol ts
Capacita nce - p F
C
ies
C
oes
C
res
f = 1 MHz
Fi g. 13 . Dependence of Turn-off
Switchi ng Time on Temperatu re
120
140
160
180
200
220
240
260
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Sw itching Tim e - nanoseconds
t
d(off)
t
fi
- - - - - -
R
G
= 5Ω
V
GE
= 15V
V
CE
= 400V
I
C
= 12A
24A
48A
I
C
= 48
A
24A
12A
Fig. 16. Reverse-Bias Safe
Operating Area
0
5
10
15
20
25
30
35
40
45
50
100 150 200 250 300 350 400 450 500 550 600
V
C E
- Volts
I
C
- A m peres
T
J
= 125
º
C
R
G
= 10 Ω
dV/ dT < 10V/ ns
Fig. 17. Maximum Transient T hermal Resist an ce
0.1
1
1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
( ºC / W )
IXSH 30N60B2D1
IXST 30N60B2D1
200 600 10000 400 800
60
70
80
90
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
04080120160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C -diF/dt
ts
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
VFR
diF/dt
V
200 600 10000 400 800
0
5
10
15
20
25
30
100 1000
0
200
400
600
800
1000
0123
0
10
20
30
40
50
60
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/µs
A
V
nC
A/µsA/µs
trr
ns tfr
ZthJC
A/µs
µs
DSEP 29-06
IF= 60A
IF= 30A
IF= 15A
TVJ= 100°C TVJ= 100°C
Fig. 20. Peak reverse current IRM
Fig. 19. Reverse recovery chargeFig. 18. Forward current IF versus VF
TVJ= 100°C TVJ= 100°C
IF= 60A
IF= 30A
IF= 15A
Qr
IRM
Fig. 20. Dynamic parameters Qr, IRM Fig. 22. Recovery time trr versus Fig. 23. Peak forward voltage VFR
IF= 60A
IF= 30A
IF= 15A
tfr
VFR
Fig. 24. Transient thermal resistance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.502 0.0052
2 0.193 0.0003
TVJ=25°C
TVJ=100°C
TVJ=150°C
Fig. 21. Dynamic parameters Qr, IRM
