HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200204
Issued Date : 2002.04.01
Revised Date : 2005. 08.18
Page No. : 1/4
HTIP117D HSMC Product Specification
HTIP117D
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP117D is designed for use in general purpose amplifier and low-speed
switching applications.
Absolute Maximum Ratings (TA=25°C)
Maximum Temperatures
Storage Temperature................................................................... -55 ~ +150 °C
Junction Temperature.......................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TC=25°C).................................................................................................................... 10 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ...................................................................................................................... -100 V
BVCEO Collector to Em itter Voltage................................................................................................................... -100 V
BVEBO Emitter to Base Voltage............................................................................................................................. -5 V
IC Collector Current (Continue)............................................................................................................................ -4 A
ICP Collector Current (Peak)................................................................................................................................. -6 A
Electrical Characteristics (TA=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -100 - - V IC=-1mA
BVCEO -100 - - V IC=-30mA
ICBO ---1mAV
CB=-100V
ICEO ---2mAV
CE=-50V
IEBO ---2mAV
EB=-5V
*VCE(sat) ---2.5VI
C=-2A, IB=-8mA
*VBE(on) ---2.8VI
C=-2A, VCE=-4V
*hFE1 1--KI
C=-1A, VCE=-4V
*hFE2 500 - - IC=-2A, VCE=-4V
Cob - - 200 pF VCB=-10V, f=0.1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Darlington Schem atic
TO-126ML
R2R1
C
E
B
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200204
Issued Date : 2002.04.01
Revised Date : 2005. 08.18
Page No. : 2/4
HTIP117D HSMC Produc t Specification
Characteristics Curve
Switch in g Time & Col lector Curren t
0.1
1
10
110
Coll e c tor Cur rent -I
C
(A)
Sw itchin g Time (us )
V
CC
=30V, I
C
=250I
B1
= -250I
B2
Tstg
Tf
Ton
Capa citance & Revi erse-Biased Voltage
10
100
1000
0.1 1 10 100
Re ver se- Biased Voltage ( V)
Capacitance ( p F)
Cob
Curren t Gain & Collect or Cur ren t
1
10
100
1000
10000
100000
1 10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
hFE
25
o
C
125
o
C
75
o
C
hFE @ V
CE
=4V
Satur ation Volta ge & C ol lcetor Cu rr ent
100
1000
10000
100 1000 10000
Collector Current I
C
(mA)
Saturation Voltage (mV)
V
CE(sat)
@ I
C
=250I
B
25
o
C
75
o
C
125
o
C
ON Voltage & Collector Current
100
1000
10000
1 10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
O N Volt age ( m V)
25
o
C
125
o
C
75
o
C
V
BE(ON)
@ V
CE
=4V
Safe Oper atin g Area
0.01
0.1
1
10
1 10 100
Forwar d Vol t age - V
CE
(V)
Collector Current-I
C
(A)
PT=1ms
PT=100ms
PT=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200204
Issued Date : 2002.04.01
Revised Date : 2005. 08.18
Page No. : 3/4
HTIP117D HSMC Produc t Specification
TO-126ML Dimension
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its produc ts without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Tai wan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Pa rk Hsi n-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
D
I
E
B
G
F
A
N
C
H
321
M
J
K
L
3-Lead TO-126ML
Plastic Package
HSMC Package Code: D
Marking:
Control Code
Date Code
HP
117
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
I
D
T
Note: Green label is used for pb-free packing
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Ep oxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 7.74 8.24
B 10.87 11.37
C 0.88 1.12
D 1.28 1.52
E 3.50 3.75
F 2.61 3.37
G13 -
H 1.18 1.42
I 2.88 3.12
J 0.68 0.84
K - 2.30
L 3.44 3.70
M 1.88 2.14
N 0.50 0.51
*: Typical, Unit: mm
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200204
Issued Date : 2002.04.01
Revised Date : 2005. 08.18
Page No. : 4/4
HTIP117D HSMC Produc t Specification
Solderi ng Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidit y=65%±1 5%
2. Reflow soldering of surface-mount devices
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate (TL to TP)<3
oC/sec <3oC/sec
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100oC
150oC
60~120 sec
150oC
200oC
60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
T ime mai n tained above:
- Temperature (TL)
- Ti me (tL)183oC
60~150 sec 217oC
60~150 sec
Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC
Time within 5oC of actual Peak
Temperature (tP)10~30 sec 20~40 sec
Ramp- down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices. 245oC ±5oC 5sec ±1sec
Pb-Free de vic es . 260oC +0/-5oC5sec ±1sec
Figure 1: Temperature prof ile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25 t 25
o
C to Peak
Time
Temperature