HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200204
Issued Date : 2002.04.01
Revised Date : 2005. 08.18
Page No. : 1/4
HTIP117D HSMC Product Specification
HTIP117D
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP117D is designed for use in general purpose amplifier and low-speed
switching applications.
Absolute Maximum Ratings (TA=25°C)
• Maximum Temperatures
Storage Temperature................................................................... -55 ~ +150 °C
Junction Temperature.......................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (TC=25°C).................................................................................................................... 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ...................................................................................................................... -100 V
BVCEO Collector to Em itter Voltage................................................................................................................... -100 V
BVEBO Emitter to Base Voltage............................................................................................................................. -5 V
IC Collector Current (Continue)............................................................................................................................ -4 A
ICP Collector Current (Peak)................................................................................................................................. -6 A
Electrical Characteristics (TA=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -100 - - V IC=-1mA
BVCEO -100 - - V IC=-30mA
ICBO ---1mAV
CB=-100V
ICEO ---2mAV
CE=-50V
IEBO ---2mAV
EB=-5V
*VCE(sat) ---2.5VI
C=-2A, IB=-8mA
*VBE(on) ---2.8VI
C=-2A, VCE=-4V
*hFE1 1--KI
C=-1A, VCE=-4V
*hFE2 500 - - IC=-2A, VCE=-4V
Cob - - 200 pF VCB=-10V, f=0.1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Darlington Schem atic
TO-126ML
R2R1
C
E
B
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200204
Issued Date : 2002.04.01
Revised Date : 2005. 08.18
Page No. : 2/4
HTIP117D HSMC Produc t Specification
Characteristics Curve
Switch in g Time & Col lector Curren t
0.1
1
10
110
Coll e c tor Cur rent -I
C
(A)
Sw itchin g Time (us )
V
CC
=30V, I
C
=250I
B1
= -250I
B2
Tstg
Tf
Ton
Capa citance & Revi erse-Biased Voltage
10
100
1000
0.1 1 10 100
Re ver se- Biased Voltage ( V)
Capacitance ( p F)
Cob
Curren t Gain & Collect or Cur ren t
1
10
100
1000
10000
100000
1 10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
hFE
25
o
C
125
o
C
75
o
C
hFE @ V
CE
=4V
Satur ation Volta ge & C ol lcetor Cu rr ent
100
1000
10000
100 1000 10000
Collector Current I
C
(mA)
Saturation Voltage (mV)
V
CE(sat)
@ I
C
=250I
B
25
o
C
75
o
C
125
o
C
ON Voltage & Collector Current
100
1000
10000
1 10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
O N Volt age ( m V)
25
o
C
125
o
C
75
o
C
V
BE(ON)
@ V
CE
=4V
Safe Oper atin g Area
0.01
0.1
1
10
1 10 100
Forwar d Vol t age - V
CE
(V)
Collector Current-I
C
(A)
PT=1ms
PT=100ms
PT=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200204
Issued Date : 2002.04.01
Revised Date : 2005. 08.18
Page No. : 3/4
HTIP117D HSMC Produc t Specification
TO-126ML Dimension
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Tai wan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Pa rk Hsi n-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
D
I
E
B
G
F
A
N
C
H
321
M
J
K
L
3-Lead TO-126ML
Plastic Package
HSMC Package Code: D
Marking:
Control Code
Date Code
HP
117
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
I
D
T
Note: Green label is used for pb-free packing
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Ep oxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 7.74 8.24
B 10.87 11.37
C 0.88 1.12
D 1.28 1.52
E 3.50 3.75
F 2.61 3.37
G13 -
H 1.18 1.42
I 2.88 3.12
J 0.68 0.84
K - 2.30
L 3.44 3.70
M 1.88 2.14
N 0.50 0.51
*: Typical, Unit: mm
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200204
Issued Date : 2002.04.01
Revised Date : 2005. 08.18
Page No. : 4/4
HTIP117D HSMC Produc t Specification
Solderi ng Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidit y=65%±1 5%
2. Reflow soldering of surface-mount devices
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate (TL to TP)<3
oC/sec <3oC/sec
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100oC
150oC
60~120 sec
150oC
200oC
60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
T ime mai n tained above:
- Temperature (TL)
- Ti me (tL)183oC
60~150 sec 217oC
60~150 sec
Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC
Time within 5oC of actual Peak
Temperature (tP)10~30 sec 20~40 sec
Ramp- down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices. 245oC ±5oC 5sec ±1sec
Pb-Free de vic es . 260oC +0/-5oC5sec ±1sec
Figure 1: Temperature prof ile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25 t 25
o
C to Peak
Time
Temperature
