1
FMP20N60S1 FUJI POWER MOSFET
Super J-MOS series N-Channel enhancement mode power MOSFET
Features
Low on-state resistance
Low switching loss
easy to use (more controllabe switching dV/dt by Rg)
Applications
UPS
Server
Telecom
Power conditioner system
Power supply
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
CONNECTION
GATE
DRAIN
SOURCE
JEDEC : TO-220AB
10+0.5
0
2.7 ±0.1
6.4 ±0.2
15 ± 0.2
3.6 ±0.2
13.5min.
0.8 +0.2
-0.1
2.54 ± 0.2 2.54 ±0.2
0.4 +0.2
0
2.7±0.2
1.3±0.2
4.5±0.2
1.2 ±0.2
φ3.6±0.2
1
2
3
12 3
123
PRE-SOLDER
DIMENSIONS ARE IN
MILLIMETERS.
TO-220
http://www.fujielectric.com/products/semiconductor/
Maximum Ratings and Characteristics
Absolute Maximum Ratings at TC=25°C (unless otherwise specied)
Description Symbol Characteristics Unit Remarks
Drain-Source Voltage VDS 600 V
VDSX 600 V VGS=-30V
Continuous Drain Current ID
±20 A Tc=25°C Note*1
±12.6 A Tc=100°C Note*1
Pulsed Drain Current IDP ±60 A
Gate-Source Voltage VGS ±30 V
Repetitive and Non-Repetitive
Maximum Avalanche Current IAR 6.6 A Note *2
Non-Repetitive
Maximum Avalanche Energy EAS 472.2 mJ Note *3
Maximum Drain-Source dV/dt dVDS/dt 50 kV/μs VDS≤ 600V
Peak Diode Recovery dV/dt dV/dt 15 kV/μs Note *4
Peak Diode Recovery -di/dt -di/dt 100 A/μs Note *5
Maximum Power Dissipation PD
2.02 WTa=25°C
150 TC=25°C
Operating and Storage Temperature range Tch 150 °C
Tstg -55 to +150 °C
Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.1 and Fig.2
Note *3 : Starting Tch=25°C, IAS=2A, L=216mH, VDD =60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C.
Note *5 : IF≤-ID, dV/dt=15kV/μs, VDD≤400V, Tch≤150°C.
2
FMP20N60S1
3
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Electrical Characteristics at TC=25°C (unless otherwise specied)
Static Ratings
Description Symbol Conditions min. typ. max. Unit
Drain-Source Breakdown Voltage BVDSS
ID=250μA
VGS=0V 600 - - V
Gate Threshold Voltage VGS(th)
ID=250μA
VDS=VGS
2.5 3 3.5 V
Zero Gate Voltage Drain Current IDSS
VDS=600V
VGS=0V Tch=25°C - - 25 μA
VDS=480V
VGS=0V Tch=125°C - - 250
Gate-Source Leakage Current IGSS
VGS= ± 30V
VDS=0V - 10 100 nA
Drain-Source On-State Resistance RDS(on)
ID=10A
VGS=10V - 0.161 0.19 Ω
Gate resistance RGf=1MHz, open drain - 3.7 - Ω
Forward Transconductance gfs
ID=10A
VDS=25V 8.5 17.5 - S
Input Capacitance Ciss VDS=10V
VGS=0V
f=1MHz
- 1470 -
pF
Output Capacitance Coss - 3120 -
Reverse Transfer Capacitance Crss - 280 -
Effective output capacitance,
energy related (Note *6) Co(er)
VGS=0V
VDS=0…480V - 90 -
Effective output capacitance,
time related (Note *7) Co(tr)
VGS=0V
VDS=0…480V
ID=constant
- 305 -
Turn-On Time td(on) VDD=400V, VGS=10V
ID=10A, RG=27Ω
See Fig.3 and Fig.4
- 22 -
ns
tr- 40 -
Turn-Off Time td(off) - 162 -
tf- 22 -
Total Gate Charge QGVDD=480V, ID=20A
VGS=10V
See Fig.5
- 48 -
nC
Gate-Source Charge QGS - 12.5 -
Gate-Drain Charge QGD - 15 -
Drain-Source crossover Charge QSW -8-
Avalanche Capability IAV
L=6.02mH, Tch=25°C
See Fig.1 and Fig.2 6.6 - - A
Diode Forward On-Voltage VSD
IF=20A, VGS=0V
Tch=25°C - 0.9 1.35 V
Reverse Recovery Time trr IF=20A, VGS=0V
VDD=400V
-di/dt=100A/μs
Tch=25°C
See Fig.6
370 - ns
Reverse Recovery Charge Qrr - 6.2 - μC
Peak Reverse Recovery Current Irp - 32 - A
Thermal Characteristics
Description Symbol min. typ. max. Unit
Channel to Case Rth(ch-c) 0.83 °C/W
Channel to Ambient Rth(ch-a) 62 °C/W
Note *6 : Co(er) is a xed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% BVDSS.
Note *7 : Co(tr) is a xed capacitance that gives the same charging times as Coss while VDS is rising from 0 to 80% BVDSS.
2
3
FUJI POWER MOSFET
FMP20N60S1
http://www.fujielectric.com/products/semiconductor/
0 5 10 15 20 25
0
5
10
15
20
25
30
35
40
45
50
55
60
8V
20V
10V
6.5V
6V
5.5V
5V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS): 80µs pulse test, Tch=25°C
VGS=4.5V
0 5 10 15 20 25
0
5
10
15
20
25
30
35
40
5V
8V 20V
10V
6V
5.5V
4.5V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS): 80µs pulse test, Tch=150°C
VGS=4V
0 5 10 15 20 25 30 35 40 45 50 55 60
0.0
0.1
0.2
0.3
0.4
0.5
0.6 8V
6V
5.5V
5V 6.5V
4.5V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)= f(ID): 80µs pulse test, Tch=25°C
10V
VGS=20V
0 5 10 15 20 25 30 35 40
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
4V
8V
6V
5.5V
5V4.5V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)= f(ID): 80µs pulse test, Tch=150°C
10V
VGS=20V
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
160
Allowable Power Dissipation
PD= f(TC)
PD [W]
TC [°C]
10-1 100101102103
10-2
10-1
100
101
102
t
PD
Power loss waveform :
Squarewaveform
t
PD
t
PD
Power loss waveform :
Squarewaveform
ID [A]
VDS [V]
Safe Operating Area
ID=f(VDS): Duty=0(Single pulse), TC=25°C
t=
1µs
10µs
1ms
100µs
4
FMP20N60S1
5
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
-50 -25 0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
RDS(on) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)= f(Tch): ID=10A, VGS=10V
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
6
typ.
Gate Threshold Voltage vs. Tch
VGS(th)= f(Tch): VDS= VGS, ID= 250µA
VGS(th) [V]
Tch [°C]
10-2 10-1 100101102
10-1
100
101
102
103
104
105
C [pF]
VDS [V]
Typical Capacitance
C= f(VDS): VGS=0V, f=1MHz
Crss
Coss
Ciss
0 1 2 3 4 5 6 7 8 9 10
1E-3
0.01
0.1
1
10
100
Tch=25℃
150℃
ID[A]
VGS[V]
Typical Transfer Characteristic
ID= f(VGS): 80µs pulse test, VDS=25V
0.00 .51 .01 .52 .0
0.1
1
10
100
Tch=25℃
150℃
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF= f(VSD): 80µs pulse test
0.1 1 10 100
0.1
1
10
100
150℃
Tch=25℃
gfs [S]
ID [A]
Typical Transconductance
gfs= f(ID):80µs pulse test, VDS=25V
4
5
FUJI POWER MOSFET
FMP20N60S1
http://www.fujielectric.com/products/semiconductor/
0 100 200 300 400 500 600
0
2
4
6
8
10
12
14
Typical Coss stored energy
Eoss [uJ]
VDS [V]
0 10 20 30 40 50 60
0
2
4
6
8
10
Qg [nC]
Typical Gate Charge Characteristics
VGS= f(Qg): ID=20A, Vdd=480V, Tch=25°C
VGS [V]
100101102
101
102
103
Typical Switching Characteristics vs. ID Tch=25
t= f(ID): Vdd=400V, VGS=10V/0V, RG=27Ω, L=500uH
td(on)
tr
tf
td(off)
t [ns]
ID [A]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Transient Thermal Impedance
Zth(ch-c)= f(t): D=0
Zth(ch-c) [℃/W]
t [sec]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
450
500
IAS =6.6A
IAS =4A
IAS =2A
EAV [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. startingTch
E(AV)= f(starting Tch): VCC=60V, I(AV)<=6.6A
6
FMP20N60S1
7
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
" " (Blank): Japan
P : Philippines
Trademark
Type name
Y: Last digit of year
M: Month code 1~9 and O,N,D
NNN: Lot. serial number
Under bar of date code
: means lead-free mark
Date code & Lot No.
YMNNN
Country of
origin mark.
* The font (font type,size) and the trademark-size
might be actually different.
20N60S1
CONNECTION
GATE
DRAIN
SOURCE
JEDEC : TO-220AB
10+0.5
0
2.7 ±0.1
6.4 ±0.2
15± 0.2
3.6 ±0.2
13.5min.
0.8 +0.2
-0.1
2.54 ± 0.2 2.54±0.2
0.4 +0.2
0
2.7±0.2
1.3±0.2
4.5±0.2
1.2 ±0.2
φ3.6±0.2
1
2
3
12 3
123
PRE-SOLDER
DIMENSIONS ARE IN MILLIMETERS.
Outview: TO-220 Package
Marking
6
7
FUJI POWER MOSFET
FMP20N60S1
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specications, characteristics, data, materials, and structures as of February 2012.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.
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implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
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faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, re, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.
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requirements.
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