SiT8021
Ultra-Small, 1 to 26 MHz Oscillator
The Smart Timing Choice
Description Features
The SiT 8021 is the indus tr y's sm alles t and the l owes t power M Hz
oscillator. With 0.1 mW of active power consumption at 3.072 MHz
output frequency, this µPower oscillator enables longer battery life
for a wear able, IoT or mobil e device compared to a quartz-based
oscillator or resonator.
The device comes in the smallest 1.5 mm x 0.8 m m package. The
unique combination of ultra-low power, ultra-small package and
flexible output frequency makes it ideal for power sensitive and
space constrained applications including:
Tablets
Fitness bands
Health and medical monitoring
Wearables
Portable audio
Input devices
IoT devices
Ultra-low current c onsumption of 60 µA at 3.072 MHz
Ultra-s m all 1.5 mm x 0.8 mm package
1 to 26 MHz with 6 decimal places of accuracy
Operati ng temperature from -40°C to 85°C. Contact Si Time
for -40°C to 105°C option
Frequency stability as low as ±100 ppm. Contact SiTime for
±25 ppm or ± 50 ppm options
Programm able outp ut drive s trength for best EMI or driving
multiple loads
Ultra-light weight of 1.28 mg
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
Electrical Specifications
Table 1. Electri cal Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values
are at 25°C and nominal supply voltage.
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
Outp ut Fr e qu en cy Range
f 1.000000 26.000000
MHz
Initial Tolerance
f_tol
-15
–
+15
ppm
Frequency offset at 25°C post reflow
Frequency Stability
f_stab -100 – +100
ppm
Inclusive of initial tolerance, and variations over operating
temperature, rated power supply voltage and output load.
Contact SiTime for ±25 or ±50 ppm options.
First Year Aging
f_1year
-3
+3
ppm
at 25°C
Operating Temperature Range
Operating Temperature Range T_use
-20
–
+70
°C
Extended Commercial
-40
–
+85
°C
Industrial. Contact SiTime for -40°C to 105°C option.
Supply Voltage and Current Consumption
Supply Voltage VDD
1.62
1.8
1.98
V
Contact SiTime for 3.3V option
Current Consumption[1] IDD
–
60
–
µA
f = 3.072 MHz, no load
–
110
130
µA
f = 6.144 MHz, no load
–
230
270
µA
f = 6.144 MHz, 10 pF load
–
160
–
µA
f = 12 MHz, no load
Standby Current
I_std
–
0.7
1.3
µA
ST pin = HIGH, output is weakly pulled down
LVCMOS Output Characteristics
Duty Cycle
DC 45 – 55
%
Rise/Fall Time T_r, T_f – 4 8
ns
20% - 80%. Contact SiTime for other programmable rise/fall
options
Output High Voltage
VOH
90%
–
–
VDD
IOH = -0.5 mA
Outp ut L ow Voltage VOL – – 10%
VDD
IOL = 0.5 mA
Input Characteristics
Input High Voltage
VIH
80% – –
VDD
Input Low Voltage
VIL
–
–
20%
VDD
Input Slew Rate
In-slew
10
–
–
V/µs
Input Pull-down Impedance Z_in
300
–
–
k
Ω
Active mode (ST pin = LOW)
2.5 4 –
M
Ω
Standby mode (ST pin = HIGH)
SiTime Corporation 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400
www.sitime.com
Rev. 1.11
Revised Sep 16, 2016
SiT8021
Ultra-Small, 1 to 26 MHz Oscillator
The Smart Timing Choice
Rev. 1.11
Page 2 of 9
www.sitime.com
Electrical Specifications
Table 1. Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values
are at 25°C and nominal supply voltage.
Parameters Symbol Min. Typ. Max. Unit Condition
Startup, Standby and Resume Timing
Startup Time
T_start – 75 150 ms Measured from the time VDD reaches 90% of its final value
Standby Time
T_stdby – – 20 µs Measured from the time ST pin crosses 50% threshold
Resume Time
T_resume
–
2
3
ms
Measured from the time ST pin crosses 50% threshold
Jitter
RMS Period Jitter
T_jitt
–
75
110
ps
f = 6.144 MHz
RMS Phase Jitter
T_phj
–
0.8
2.5
ns
f = 6.144 MHz, Integration bandwidth = 100 Hz to 40 kHz
Note 2
Notes:
1.
Current consumption with load is a function of the output frequency and output load. For any given output frequency, the capacitive loading will increase current
consumption equal to C_load*VDD*f(MHz).
2.
Max spec inclusive of 25 mV peak-to-peak sinusoidal noise on VDD. Noise frequency 100 Hz to 20 MHz.
Table 2. Pin Description
Pin Symbol Functionality
1 ST Input L: Spec if ied fr equen cy ou tpu t
H: Output is low (w eak pull down) . Devi ce goes to the sta ndby mode.
Supply curr ent reduce s to I_ std .
2 OUT Output LVCMOS clock output
3 VDD Power Supply vo ltage. By pass w ith a 0. 01µF X7R c apa citor .
4 GND Power Conne ct t o gr ound
Top View
GND
VDD
OUT
ST
14
23
Figure 1. Pin Assignments
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of
the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Test Condition
Value
Unit
Continuous Power Supply Voltage Range (VDD)
-0.5 to 3.63
V
Short Duration Maximum Power Supply Voltage (VDD)
<30 seconds
4.0
V
Continuous Maximum Operating Temperature
105
°C
Short Duration Maximum Operating Temperature
≤30 seconds
125
°C
Human Body Model (HBM) ESD Protection
JESD22-A115
2000
V
Charge-Device Model (CDM) ESD Protection
JESD22-C101
750
V
Machine Model (MM) ESD Protection
T
A
= 25°C
200
V
Latch-up Tolerance
JESD78 Compliant
Mechanical Shock Resistance
MII 883, Met ho d 2002
10,000
g
Mechanical Vibration Resistance
MII 883, Met ho d 2007
70
g
1508 CSP Junction Temperature
150
°C
Storage Temperature
-65 to 150
°C
Soldering Temperature (follow standard Pb free soldering guidelines)
–
260
°C
SiT8021
Ultra-Small, 1 to 26 MHz Oscillator
The Smart Timing Choice
Rev. 1.11
Page 3 of 9
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Block Diagram
VDD
CMOS
ST
MEMS
Oscillator
Circuit
Control
Frequency
Synthesizer
Regulator
OUT
DRV
OUT
GND
Figure 2. SiT8021 Block Diagram
Device Operating Modes and Outputs
The SiT8021 supports a ≤0.7 µA standby mode for battery-
powered and other power sensitive applications. The
switching between the active and standby modes is controlled
by the logic level on the ST pin as shown in the table below.
Table 4. Operating Modes and Output States
ST Pin MODE OUTPUT IDD Example
LOW Active Specified
frequency
60 µA @ 3.072 MHz
FLOAT
Active
with 200 kΩ internal
pull-down Specified
frequency
60 µA @ 3.072 MHz
HIGH
Standby
Hi-Z,
pulled-do w n wit h
1 MΩ impedence
1.3 µA
Active Mode
The SiT8021 operates in the active mode when the ST pin is
at logic LOW or FLOAT. In the active mode, the device uses
the on-chip frequency synthesizer to generate an output from
the internal MEMS resonator reference. The frequency of the
output is factory programmed based on the device ordering
code.
Standby Mode
The SiT8021 operates in the standby mode when the ST pin
is at logic HIGH. In the standby mode, all internal circuits with
the exception of the MEMS oscillator circuit and the ST pin
detection logic are turned off to reduce power consumption.
While in standby mode, the input impedance of the ST pin is
increased to further reduce system-level power consumption.
The output driver of the device in the standby mode is
pulled-down with 1 MΩ impedance.
Output During S tartup and Resume
The SiT8021 s tarts up with the output disabled. The output is
enabled once all internal circuit blocks are active, and logic
LO W or FLOAT is detected on the ST pin.
As shown in Table 4, logic HIGH at the ST pin forces the
SiT8021 into the “standby” state, causing the output to disable.
Upon pulling the ST pin LOW, the device enters the “resume”
state, keeping the output disabled. Once the “resume” state
ends, the device output enables.
The first clock pulse after startup or resume is accurate to the
rated stability.
Low Power Design Guidelines
For high EM noise environments, we recommend the following
design guidelines:
•
Place oscillator as far away from EM noise sources as
possible (e.g., high-voltage switching regulators, motor
drive control).
•
Route noisy PCB traces, such as digital data lines or high
di/dt power supply lines, away from the SiTime oscillator.
•
Place a solid GND plane underneath the SiTime oscillator
to shield the oscillator from noisy traces on the other board
layers.
Manufacturing Guidelines
•
No Ultrasonic or Megasonic Cleaning: Do not subject the
SiT8021 to an ultrasonic or megasonic cleaning environ-
ment. Permanent damage or long-term reliability issues to
the device may occur in such an event.
•
Applying board-level underfill (BLUF) to the device is
acceptable, but will cause a slight shift of few ppm in the
initial frequency tolerance. Tested with UF3810, UF3808,
and FP4530 underfill.
•
Reflow profile, per JESD22-A113D.
•
For additional manufacturing guidelines and marking/
tape-reel instructions, click on the following link:
http://www.sitime.com/component/docman/doc_download
/243-manufactuing-notes-for-sitime-oscillators
SiT8021
Ultra-Small, 1 to 26 MHz Oscillator
The Smart Timing Choice
Rev. 1.11
Page 4 of 9
www.sitime.com
Test Circuit and Waveform
0.01µF
Power
Supply
ST
Test
Point
15pF
(including probe
and fixture
capacitance)
VDD OUT
GND
Figure 3. Test Circuit
80% Vdd
High Pulse
(TH)
50%
20% Vdd
Period
tftr
Low Pulse
(TL)
Figure 4. Waveform[3]
Note:
3.
Duty Cycle is computed as Duty Cycle = TH/Period.
Timing Diagram
Min. Operating Voltage Vdd VDD - Pin 4 Voltage
CLK Output
T_start
T_start: Time to valid clock output from power on
NO Glitch first cycle
Figure 5. Startup Timing[4, 5]
50% Vdd
Vdd ST - Pin 1 Voltage
CLK Output
T_resume
T_resume: Time to valid clock output from the
time ST pin crosses 50% threshold
Figure 6. Resume Timing
[4, 5]
50% Vdd
Vdd ST – Pin 1 Voltage
CLK Output
T_Stdby: Time for output to go high-Z from the time
ST pin crosses 50% threshold
HiZ
T_Stdby
Figure 7. Standby Timing
[4]
Notes:
4.
SiT8021 supports “no runt” pulses and “no glitch” output during startup or resume.
5.
SiT8021 supports gated output which is accurate within rated frequency stability from the first cycle.
Rev. 1.11
Page 5 of 9
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SiT8021
Ultra-Small, 1 to 26 MHz Oscillator
The Smart Timing Choice
Performance Plots[6]
Figure 8. Idd vs Frequency without load
Figure 9. Idd vs Frequency with 10pF load
Figure 10. Frequency vs Temperature
Figure 11. RMS Period Jitter vs Frequency
Figure 12. Duty Cycle vs Frequency
Figure 13. RMS Phase Jitter Random vs Frequency[7]
0
50
100
150
200
250
300
350
400
0 5 10 15 20 25
Idd ( µA)
Frequency (MHz)
0
100
200
300
400
500
600
700
800
900
0 5 10 15 20 25
Idd ( µA)
Frequency (MHz)
-100.0
-75.0
-50.0
-25.0
0.0
25.0
50.0
75.0
100.0
-40 -20 020 40 60 80
Frequency Stability (ppm)
Temperature (°C)
DUT1 DUT2 DUT3 DUT4 DUT5
DUT6 DUT7 DUT8 DUT9 DUT10
0
100
200
300
400
500
600
0 5 10 15 20 25
RMS period jitter (ps)
Frequency (MHz)
45
47
49
51
53
55
0 5 10 15 20 25
Duty cycle (%)
Frequency (MHz)
0.7
1.1
1.5
1.9
2.3
0 5 10 15 20 25
IPJ (ns)
Frequency (MHz)
Rev. 1.11
Page 6 of 9
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SiT8021
Ultra-Small, 1 to 26 MHz Oscillator
The Smart Timing Choice
Performance Plots[6]
Figure 14. Rise Time vs Temperature[8]
Figure 15. Fall Time vs Temperature[8]
Notes:
6.
All data is measured at room temperature, unless otherwise stated.
7.
Data is measured with 15 pF load.
8.
Integration range is from 100 Hz to 40 kHz.
0
1
2
3
4
5
6
7
-40 -15 10 35 60 85
Rise time (ns)
Temperature (°C)
0
1
2
3
4
5
6
7
-40 -15 10 35 60 85
Fall time (ns)
Temperature (°C)
Rev. 1.11
Page 7 of 9
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SiT8021
Ultra-Small, 1 to 26 MHz Oscillator
The Smart Timing Choice
Dimensions and Patterns
Package Size – D im e ns i o ns (Unit: mm)
Recom m en ded Land Pa t t er n (U n it: mm)
1.55 x 0.85 mm CSP
#1 #2
#4 #3
#2 #1
#3 #4
1.54 ±0.04
0.84 ±0.04
0.315 ±0.015
Top View
Bottom View
Side View
#1 #2
#4#3
Recommend 4-mil (0.1mm) stencil thickness
Rev. 1.11
Page 8 of 9
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SiT8021
Ultra-Small, 1 to 26 MHz Oscillator
The Smart Timing Choice
Ordering Information
Frequency
Refer to frequency list below
Part Family
“SiT8021”
Revision Letter
“A” is the revision
Temperature Range
[9]
“I” Industrial, -40 to 85ºC
Supply Voltage
[11]
“18” for 1.8V ±10%
Packaging
Feature Pin
“S” for Standby
“C” Commercial, -20 to 70ºC
Frequency Stability
[12]
“4” for ±100 ppm
Package Size
SiT8021AC -J4-18S -6.144000D
“J” 1.5 x 0.8 mm x mm
“D”: 8 mm Tape & Reel, 3ku reel
“E”: 8 mm Tape & Reel, 1ku reel
“S”: 8 mm Tape & Reel, 10ku reel
Output Drive Strength
[10]
“–” Default
Notes:
9.
Contact SiTime for -40 to 105ºC option.
10.
Contact SiTime for other drive strength options that result in different rise/fall time for any given output load.
11.
Contact SiTime for 3.3V option.
12.
Contact SiTime for ±25 or ±50 ppm options.
Table 5. List of Standard Frequencies [13]
2.048 MH z
4 MHz
6.144 MH z
8 MHz
12 MHz
12.288 MHz
16 MHz
19.2 MHz
24 MHz
26 MHz
Notes:
13.
All frequencies from 1 to 26 MHz are in production. Contact your SiTime distributors or SiTime sales offices for minimum order quantity requirement.
Rev. 1.11
Page 9 of 9
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SiT8021
Ultra-Small, 1 to 26 MHz Oscillator
The Smart Timing Choice
Revision History
Table 5. Datasheet Version and Change Log
Version
Release Date
Change Summary
0.1 12/15/14
Advance Information
0.2 1/27/15
•
Updated CSP dimension tolerance
•
Removed 2.0 mm x 1.6 mm package
•
Changed to 6.144 MHz as the reference frequency for jitter, IDD and other relevant parameters
•
Change d resume time (ma x) to 5 ms
•
Changed the parameter PSNR to Power Supply Noise Sensitivity and specified in RMS
0.3 3/31/15
•
Changed VIL and VIH values in the EC table
•
Reduced standby time in the EC table
•
Revised phase jitter condition to include power supply noise sensitivity
•
Removed power supply noise spec
0.9 5/22/15
•
Added typi cal v alu es f or activ e an d standby current
•
Added current consumption for additional frequencies
•
Changed ±50 ppm option to Contact SiTime
•
Added manufacturing guideline
•
Other miscellaneous format and footnote changes
1.0 11/18/15
•
Revised initial tolerance, current consumption, standby current, input high/low voltage, input
pull-down impedance, startup/resume time and RMS period/phase jitter in Table.1
•
Added performance plots
1.1 2/19/16
•
Added 10 Standard frequencies to the ordering information
1.11 9/16/16
•
Updated the table.5 list of standard frequencies
•
Added a graph of Idd vs Frequency without load to the performance plots section
© SiTime Corporation 2015. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any l oss, damage or defect of a
Product which is caused in whol e or in part by (i) use of any circuitry other than ci rcuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)
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