Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE General Description Features The AP2111 is CMOS process low dropout linear regulator with enable function, the regulator delivers a guaranteed 600mA (Min) continuous load current. * * * * * The AP2111 provides 1.2V, 1.8V, 2.5V, 3.3V, 4.8V regulated output and 0.8V to 5V adjustable output, and provides excellent output accuracy 1.5%, it is also provides a excellent load regulation, line regulation and excellent load transient performance due to very fast loop response. The AP2111 has built-in auto discharge function. * * * * * * * * The AP2111 features low power consumption. The AP2111 is available in SOIC-8, PSOP-8 SOT-223 and SOT-23-5 packages. * * AP2111 Output Voltage Accuracy: 1.5% Output Current: 600mA (Min) Foldback Short Current Protection: 50mA Enable Function to Turn On/Off VOUT Low Dropout Voltage (3.3V): 250mV (Typ) @ IOUT=600mA Excellent Load Regulation: 0.2%/A (Typ) Excellent Line Regulation: 0.02%/V (Typ) Low Quiescent Current: 55A (Typ) Low Standby Current: 0.01A (Typ) Low Output Noise: 50VRMS PSRR: 65dB @ f=1kHz, 65dB @ f=100Hz OTSD Protection Stable with 1.0F Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic Operating Temperature Range: -40C to 85C ESD: MM 400V, HBM 4000V Applications * * * Laptop computer Potable DVD LCD Monitor SOIC-8 PSOP-8 SOT-223 SOT-23-5 Figure 1. Package Types of AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 1 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Pin Configuration M Package MP Package (SOIC-8) (PSOP-8) H Package K Package (SOT-223) (SOT-23-5) 1 5 2 3 4 Figure 2. Pin Configuration of AP2111 (Top View) Pin Descriptions Pin Number SOIC-8/PSOP-8 SOT-223 Pin Name 4 3 3 VIN 2 2 4 VOUT 1 EN 2 GND 5 ADJ/NC 8 1, 3, 5, 6, 7 May 2012 SOT-23-5 1 Function Input voltage Output voltage Chip enable, H - normal work, L - shutdown output Rev. 1. 5 Ground Adjust output for ADJ version/No connected for fixed version BCD Semiconductor Manufacturing Limited 2 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Functional Block Diagram A (B) A: SOIC-8/PSOP-8 B: SOT-223 Figure 3. Functional Block Diagram of AP2111 for Fixed Version EN 1 3 UVLO & Shutdown Logic VIN Foldback Current Limit Thermal Shutdown 4 VOUT 3m 5 ADJ/NC VREF 2 GND SOT-23-5 Figure 4. Functional Block Diagram of AP2111 for Adjustable Version May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 3 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Ordering Information AP2111 G1: Green Blank: Tube TR: Tape & Reel Circuit Type Package M: SOIC-8 MP: PSOP-8 H: SOT-223 K: SOT-23-5 Package SOIC-8 PSOP-8 SOT-223 SOT-23-5 Temperature Range -40 to 85C -40 to 85C -40 to 85C -40 to 85C 1.2: Fixed Output 1.2V 1.8: Fixed Output 1.8V 2.5: Fixed Output 2.5V 3.3: Fixed Output 3.3V 4.8: Fixed Output 4.8V ADJ: Adjustable Output Part Number Marking ID Packing Type AP2111M-1.2G1 2111M-1.2G1 Tube AP2111M-1.2TRG1 2111M-1.2G1 Tape & Reel AP2111M-1.8G1 2111M-1.8G1 Tube AP2111M-1.8TRG1 2111M-1.8G1 Tape & Reel AP2111M-2.5G1 2111M-2.5G1 Tube AP2111M-2.5TRG1 2111M-2.5G1 Tape & Reel AP2111M-3.3G1 2111M-3.3G1 Tube Tape & Reel AP2111M-3.3TRG1 2111M-3.3G1 AP2111MP-1.2G1 2111MP-1.2G1 Tube AP2111MP-1.2TRG1 2111MP-1.2G1 Tape & Reel AP2111MP-1.8G1 2111MP-1.8G1 Tube AP2111MP-1.8TRG1 2111MP-1.8G1 Tape & Reel AP2111MP-2.5G1 2111MP-2.5G1 Tube AP2111MP-2.5TRG1 2111MP-2.5G1 Tape & Reel AP2111MP-3.3G1 2111MP-3.3G1 Tube AP2111MP-3.3TRG1 2111MP-3.3G1 Tape & Reel AP2111H-1.2TRG1 GH11B Tape & Reel AP2111H-1.8TRG1 GH11G Tape & Reel AP2111H-2.5TRG1 GH11H Tape & Reel AP2111H-3.3TRG1 GH11C Tape & Reel AP2111H-4.8TRG1 GH13D Tape & Reel AP2111K-ADJG1 G3Q Tube AP2111K-ADJTRG1 G3Q Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 4 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit VIN 6.5 V Power Supply Voltage Operating Junction Temperature Range Storage Temperature Range TJ 150 C TSTG -65 to 150 C Lead Temperature (Soldering, 10sec) TLEAD 260 C Thermal Resistance (No Heatsink) JA SOIC-8 144 PSOP-8 143 SOT-223 128 SOT-23-5 250 C/W ESD (Machine Model) 400 V ESD (Human Body Model) 4000 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Operating Ambient Range May 2012 Temperature Symbol Min VIN TA Rev. 1. 5 Typ Max Unit 2.5 6.0 V -40 85 C BCD Semiconductor Manufacturing Limited 5 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics AP2111-1.2 Electrical Characteristic (Note 2) VIN=2.5V, CIN=1.0F (Ceramic), COUT=1.0F (Ceramic), Typical TA=25C, Bold typeface applies over -40CTA85C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Load Regulation Line Regulation Dropout Voltage Quiescent Current Symbol VOUT IOUT(Max) (VOUT/VOUT) IOUT (VOUT/VOUT) VIN VDROP IQ Standby Current ISTD Power Supply Rejection Ratio PSRR Output Voltage Temperature Coefficient (VOUT/VOUT) T Conditions VIN =2.5V, 1mA IOUT 30mA VIN=2.5V, VOUT=1.182V to 1.218V Min Typ Max Unit VOUT x98.5% 1.2 VOUT x101.5% V 600 mA VIN=2.5V, 1mA IOUT 600mA 0.2 %/A 2.5VVIN6V, IOUT=30mA 0.02 %/V IOUT =10mA 1000 1300 IOUT =300mA 1000 1300 IOUT=600mA 1000 1300 55 80 A 0.01 1.0 A VIN=2.5V, IOUT=0mA VIN=2.5V, VEN in OFF mode Ripple 0.5Vp-p VIN=2.5V, IOUT=100mA f=100Hz 65 f=1kHz 65 IOUT=30mA TA=-40C to 85C mV dB 100 ppm/C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz f 100kHz 50 VRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time EN Pull Down Resistor VOUT Discharge Resistor Thermal Shutdown Temperature Thermal Shutdown Hysteresis Thermal Resistance (Junction to Case) tS No Load RPD RDCHG Set EN pin at Low 20 s 3.0 m 60 TOTSD 160 THYOTSD 30 JC V C SOIC-8 PSOP-8 SOT-223 74.6 43.7 50.9 C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25C. Over temperature specifications guaranteed by design only. May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 6 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-1.8 Electrical Characteristic (Note 2) VIN=2.8V, CIN=1F (Ceramic), COUT=1F (Ceramic), Typical TA=25C, Bold typeface applies over -40CTA85C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Symbol Conditions Min Typ Max Unit VOUT VIN =2.8V, 1mA IOUT 30mA VOUT x98.5% 1.8 VOUT x101.5% V IOUT(Max) (VOUT/VOUT) IOUT (VOUT/VOUT) VIN Load Regulation Line Regulation Dropout Voltage VDROP Quiescent Current Standby Current IQ ISTD Power Supply Rejection Ratio Output Voltage Temperature Coefficient PSRR (VOUT/VOUT) T VIN=2.8V, VOUT=1.773V to 1.827V VIN=VOUT+1V, VOUT=1.8V, 1mA IOUT 600mA 600 mA 0.2 %/A 2.8VVIN6V, IOUT=30mA 0.02 %/V IOUT =10mA 500 700 IOUT =300mA 500 700 IOUT=600mA 500 700 VIN=2.8V, IOUT=0mA 55 80 A 0.01 1.0 A VIN=2.8V, VEN in OFF mode Ripple 0.5Vp-p VIN=2.8V, IOUT=100mA f=100Hz 65 f=1kHz 65 mV dB IOUT=30mA TA=-40C to 85C 100 ppm/C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz f 100kHz 50 VRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time tS EN Pull Down Resistor VOUT Discharge Resistor Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance (Junction to Case) No Load RPD RDCHG Set EN pin at Low 20 s 3.0 m 60 TOTSD 160 THYOTSD 30 JC V C SOIC-8 PSOP-8 SOT-223 74.6 43.7 50.9 C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25C. Over temperature specifications guaranteed by design only. May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 7 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-2.5 Electrical Characteristic (Note 2) VIN=3.5V, CIN=1F (Ceramic), COUT=1F (Ceramic), Typical TA=25C, Bold typeface applies over -40CTA85C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Symbol Conditions Min Typ Max Unit VOUT VIN =3.5V, 1mA IOUT 30mA VOUT x98.5% 2.5 VOUT x101.5% V IOUT(Max) (VOUT/VOUT) IOUT (VOUT/VOUT) VIN Load Regulation Line Regulation Dropout Voltage VDROP Quiescent Current Standby Current IQ ISTD Power Supply Rejection Ratio Output Voltage Temperature Coefficient PSRR (VOUT/VOUT) T VIN=3.5V, VOUT=2.463V to 2.537V VIN=VOUT+1V, VOUT=2.5V, 1mA IOUT 600mA 600 3.5VVIN6V, IOUT=30mA mA 0.2 %/A 0.02 %/V IOUT =10mA 5 8 IOUT =300mA 125 200 IOUT=600mA 250 400 VIN=3.5V, IOUT=0mA 55 80 A 0.01 1.0 A VIN=3.5V, VEN in OFF mode Ripple 0.5Vp-p VIN=3.5V, IOUT=100mA f=100Hz 65 f=1kHz 65 mV dB IOUT=30mA TA=-40C to 85C 100 ppm/C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz f 100kHz 50 VRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time tS EN Pull Down Resistor VOUT Discharge Resistor Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance (Junction to Case) No Load RPD RDCHG Set EN pin at Low 20 s 3.0 m 60 TOTSD 160 THYOTSD 30 JC V C SOIC-8 PSOP-8 SOT-223 74.6 43.7 50.9 C /W Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25C. Over temperature specifications guaranteed by design only. May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 8 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-3.3 Electrical Characteristic (Note 2) VIN=4.3V, CIN=1F (Ceramic), COUT=1F (Ceramic), Typical TA=25C, Bold typeface applies over -40CTA85C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Symbol Conditions Min Typ Max Unit VOUT VIN =4.3V, 1mA IOUT 30mA VOUT x98.5% 3.3 VOUT x101.5% V IOUT(Max) (VOUT/VOUT) IOUT (VOUT/VOUT) VIN Load Regulation Line Regulation Dropout Voltage VDROP Quiescent Current Standby Current IQ ISTD Power Supply Rejection Ratio Output Voltage Temperature Coefficient PSRR (VOUT/VOUT) T VIN=4.3V, 3.350V VOUT=3.251V to 600 mA VIN=4.3V, 1mA IOUT 600mA 0.2 %/A 4.3VVIN6V, IOUT=30mA 0.02 %/V IOUT =10mA 5 8 IOUT =300mA 125 200 IOUT=600mA 250 400 VIN=4.3V, IOUT=0mA 55 80 A 0.01 1.0 A VIN=4.3V, VEN in OFF mode Ripple 0.5Vp-p VIN=4.3V, IOUT=100mA f=100Hz 65 f=1kHz 65 mV dB IOUT=30mA TA=-40C to 85C 100 ppm/C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz f 100kHz 50 VRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time tS EN Pull Down Resistor VOUT Discharge Resistor Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance (Junction to Case) No Load RPD RDCHG Set EN pin at Low 20 s 3.0 m 60 TOTSD 160 THYOTSD 30 JC V C SOIC-8 PSOP-8 SOT-223 74.6 43.7 50.9 C /W Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25C. Over temperature specifications guaranteed by design only. May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 9 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-4.8 Electrical Characteristic (Note 2) (Only for SOT-223) VIN=5.5V, CIN=1F (Ceramic), COUT=1F (Ceramic), Typical TA=25C, Bold typeface applies over -40CTA85C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Load Regulation Line Regulation Dropout Voltage Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Symbol Conditions Min Typ Max Unit VOUT VIN =5.5V, 1mA IOUT 30mA VOUT x98.5% 4.8 VOUT x101.5% V IOUT(Max) (VOUT/VOUT) IOUT (VOUT/VOUT) VIN VDROP IQ ISTD PSRR (VOUT/VOUT) T VIN=5.5V, 4.850V VOUT=4.751V to 600 mA VIN=5.5V, 1mA IOUT 600mA 0.2 %/A 5.5VVIN6V, IOUT=30mA 0.02 %/V IOUT =10mA 5 8 IOUT =300mA 100 200 IOUT=600mA 200 400 VIN=5.5V, IOUT=0mA 55 80 A 0.01 1.0 A VIN=5.5V, VEN in OFF mode Ripple 0.5Vp-p VIN=5.5V, IOUT=100mA f=100Hz 65 f=1kHz 65 mV dB IOUT=30mA TA=-40C to 85C 100 ppm/C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz f 100kHz 50 VRMS Thermal Shutdown Temperature Thermal Shutdown Hysteresis Thermal Resistance (Junction to Case) TOTSD 160 THYOTSD 30 JC SOT-223 C 50.9 Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25C. Over temperature specifications guaranteed by design only. May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 10 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-ADJ Electrical Characteristic (Note 2) (Only for SOT-23-5) VIN=2.5V, CIN=1.0F (Ceramic), COUT=1.0F (Ceramic), Typical TA=25C, Bold typeface applies over -40CTA85C ranges, unless otherwise specified (Note 3). Parameter Symbol Reference Voltage VREF Maximum Output Current IOUT(Max) Load Regulation Line Regulation Quiescent Current (VOUT/VOUT) IOUT (VOUT/VOUT) VIN IQ Standby Current ISTD Power Supply Rejection Ratio PSRR Output Voltage Temperature Coefficient (VOUT/VOUT) T Conditions VIN =2.5V, 1mA IOUT 30mA VIN=2.5V, VREF=0.788V to 0.812V Min Typ Max Unit VREF x98.5% 0.8 VREF x101.5% V 600 mA VIN=2.5V, 1mA IOUT 600mA 0.2 %/A 2.5VVIN6V, IOUT=30mA 0.02 %/V VIN=2.5V, IOUT=0mA VIN=2.5V, VEN in OFF mode Ripple 0.5Vp-p VIN=2.5V, IOUT=100mA 55 80 A 0.01 1.0 A f=100Hz 65 f=1kHz 65 IOUT=30mA TA=-40C to 85C dB 100 ppm/C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz f 100kHz 50 VRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time EN Pull Down Resistor VOUT Discharge Resistor Thermal Shutdown Temperature Thermal Shutdown Hysteresis Thermal Resistance (Junction to Case) tS No Load RPD RDCHG Set EN pin at Low 20 s 3.0 m 60 TOTSD 160 THYOTSD 30 JC V C SOT-23-5 150 C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25C. Over temperature specifications guaranteed by design only. May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 11 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 1.6 4.0 1.4 3.5 1.2 3.0 Output Voltage (V) Output Voltage (V) Typical Performance Characteristics 1.0 0.8 No Load o TA=-40 C 0.6 2.5 2.0 No Load 1.5 o TA=-40 C o TA=25 C 0.4 o TA=25 C 1.0 o TA=85 C 0.2 o VOUT=1.2V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 TA=85 C 0.5 0.0 0.0 6.0 VOUT=3.3V 0.5 1.0 1.5 2.0 Input Voltage (V) Figure 5. Output Voltage vs. Input Voltage 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Figure 6. Output Voltage vs. Input Voltage 5.0 70 68 VOUT=4.8V 4.5 Quiescent Current (A) TA=25 C 4.0 3.5 3.0 2.5 2.0 IOUT=0mA 1.5 IOUT=100mA 1.0 IOUT=300mA 0.5 IOUT=600mA 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 64 62 60 58 56 54 52 50 48 6.0 46 -40 -20 0 20 40 60 80 o Input Voltage (V) Temperature ( C) Figure 7. Output Voltage vs. Input Voltage May 2012 VIN=2.5V No Load 66 O Output Voltage (V) 2.5 Input Voltage (V) Figure 8. Quiescent Current vs. Temperature Rev. 1. 5 BCD Semiconductor Manufacturing Limited 12 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Performance Characteristics (Continued) 1.210 VIN=2.5V 70 Output Voltage (V) Quiescent Current (A) CIN=1F 1.208 60 50 40 30 No Load 20 COUT=1F 1.206 1.204 IOUT=10mA IOUT=100mA o TA=-40 C 1.202 o 10 TA=25 C IOUT=300mA IOUT=600mA o TA=85 C 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 1.200 -40 6.0 -20 0 20 40 60 80 o Temperature ( C) Input Voltage (V) Figure 9. Quiescent Current vs. Input Voltage Figure 10. Output Voltage vs. Temperature 1.3 1.2 3.35 Output Voltage (V) 3.33 1.1 CIN=1F 1.0 Output Voltage (V) 3.34 VIN=4.3V COUT=1F 3.32 3.31 3.30 3.29 0.9 0.8 0.7 0.6 0.5 0.4 VIN=2.5V 3.28 IOUT=10mA 0.3 3.27 IOUT=100mA 0.2 IOUT=300mA 0.1 TA=25 C IOUT=600mA 0.0 TA=85 C 3.26 3.25 -40 o o -0.1 -20 0 20 40 60 80 0.0 o Temperature ( C) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Output Current (A) Figure 11. Output Voltage vs. Temperature May 2012 o TA= -40 C Figure 12. Output Voltage vs. Output Current Rev. 1. 5 BCD Semiconductor Manufacturing Limited 13 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Performance Characteristics (Continued) 1.2 4.0 VIN=2.0V 3.5 Output Voltage (V) Output Voltage (V) 3.0 2.5 2.0 1.5 1.0 VIN=2.5V 0.8 VIN=5.5V VIN=5.0V VIN=6.0V 0.6 0.4 VIN=4.3V 1.0 o o TA=-40 C 0.5 TA=25 C 0.2 CIN=1F o TA= 25 C 0.0 -0.5 0.0 o 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 COUT=1F 0.0 TA= 85 C 1.0 0.0 0.1 0.2 0.3 Output Current (A) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Output Current (A) Figure 13. Output Voltage vs. Output Current Figure 14. Output Voltage vs. Output Current 5.0 4.0 4.5 3.5 VOUT=4.8V 4.0 VIN=4.0V 3.5 VIN=4.3V 2.5 Output Voltage (V) Output Voltage (V) 3.0 VIN=5.0V 2.0 VIN=5.5V VIN=6.0V 1.5 1.0 o TA=25 C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VIN=5.0V 1.5 VIN=5.3V VIN=5.5V VIN=6.0V 0.0 0.0 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Output Current (A) Output Current (A) Figure 15. Output Voltage vs. Output Current May 2012 2.0 0.5 0.0 0.0 2.5 1.0 CIN=1F COUT=1F 0.5 3.0 Figure 16. Output Voltage vs. Output Current Rev. 1. 5 BCD Semiconductor Manufacturing Limited 14 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Performance Characteristics (Continued) 350 350 VOUT=4.8V 300 o TA=-40 C O TA=-40 C o 250 TA= 25 C o TA= 85 C 200 150 100 TA=25 C O TA=85 C 200 150 100 50 50 0 0.0 O 250 Dropout Voltage (V) Dropout Voltage (mV) 300 VOUT=3.3V 0.1 0.2 0.3 0.4 0.5 0 0.0 0.6 0.1 0.2 Output Current (A) 0.3 0.4 0.5 0.6 Output Current (A) Figure 17. Dropout Voltage vs. Output Current Figure 18. Dropout Voltage vs. Output Current 260 Ground Current (A) 220 70 VIN=4.3V o 65 TA=-40 C o 200 TA= 25 C 180 TA= 85 C 60 o PSRR (dB) 240 160 140 120 100 55 50 VIN=2.5V 45 Ripple=0.5V VOUT=1.2V 40 80 IOUT=10mA IOUT=100mA 35 IOUT=300mA 60 30 40 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Figure 19. Ground Current vs. Output Current May 2012 20 100 1k 10k 100k Frequency (Hz) Output Current (A) Figure 20. PSRR vs. Frequency Rev. 1. 5 BCD Semiconductor Manufacturing Limited 15 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Performance Characteristics (Continued) Figure 21. Load Transient Figure 22. Enable On Figure 23. Enable Off May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 16 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Application (Note 4) Note 4: It is recommended to use X7R or X5R dielectric capacitor if 1.0F ceramic capacitor is selected as input/output capacitors. Figure 24. Typical Application of AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 17 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Mechanical Dimensions SOIC-8 4.700(0.185) 5.100(0.201) 7 Unit: mm(inch) 0.320(0.013) 1.350(0.053) 1.750(0.069) 8 8 7 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.800(0.031) 0.300(0.012) R0.150(0.006) 0.100(0.004) 0.200(0.008) 0 8 1.000(0.039) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.190(0.007) 0.250(0.010) 1 5 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.450(0.017) 0.800(0.031) Note: Eject hole, oriented hole and mold mark is optional. May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 18 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Mechanical Dimensions (Continued) Unit: mm(inch) 3.202(0.126) 3.402(0.134) PSOP-8 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 19 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Mechanical Dimensions (Continued) Rev. 1. 5 Unit: mm(inch) 3.700(0.146) 3.300(0.130) 6.700(0.264) May 2012 7.300(0.287) SOT-223 BCD Semiconductor Manufacturing Limited 20 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Mechanical Dimensions (Continued) SOT-23-5 Unit: mm(inch) 2.820(0.111) 3.020(0.119) 0.100(0.004) 0.200(0.008) 0.200(0.008) 0.700(0.028) REF 0.950(0.037) TYP 0.300(0.012) 0.400(0.016) 0 8 1.800(0.071) 2.000(0.079) 0.000(0.000) 0.150(0.006) 0.900(0.035) 1.300(0.051) May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 21 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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MAIN SITE SITE MAIN - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.District, Shenzhen Office BCDRui Semiconductor Company Limited China Taiwan Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Tel: +86-755-8826 Tel: +886-2-2656 2808 Room E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan Fax: +86-755-88267951 7865 Fax: +886-2-2656 28062808 Tel: +86-755-8826 Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 USA Office BCD Office Semiconductor Corp. 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