2N7000CSM
* Pulse width limited by maximum junction temperature.
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
•V
(BR)DSS = 60V
RDS(ON) = 5ΩΩ
•I
D= 200mA
Hermetic Ceramic Surface Mount
package
Screening Options Available
VDS Drain – Source Voltage
VGS Gate – Source Voltage
IDDrain Current @ TCASE = 25°C
IDM Pulsed Drain Current *
PDPower Dissipation @ TCASE = 25°C
TjOperating Junction Temperature Range
Tstg Storage Temperature Range
60V
±40V
200mA
500mA
300mW
–55 to 150°C
–55 to 150°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
SOT23 CERAMIC
(LCC1 PACKAGE)
21
0.51 ± 0.10
(0.02 ± 0.004) 0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012) rad.
rad.
A =
3
PAD 1 – Gate
Underside View
PAD 2 – Source PAD 3 – Drain
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 7022
Issue: 1
Parameter Min. Typ. Max. Unit
RθJA Thermal Resistance, Junction to Ambient 416 °C/W
V(BR)DSS Drain – Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IGSS Gate – Body Leakage Current
IDSS Zero Gate Voltage Drain Current
ID(on)* On–State Drain Current
RDS(on)* Drain – Source On Resistance
VDS(on)* Drain – Source On Voltage
gFS* Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
tON Turn–On Time
tOFF Turn–Off Time
2N7000CSM
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
VGS = 0V ID= 10μA
VDS = VGS ID= 0.25mA
VGS = ±20V VDS = 0V
VDS = 60V VGS = 0V
TCASE = 125°C
VDS2VDS(ON) VGS = 4.5V
VGS = 10V
ID= 0.5A TCASE = 125°C
VGS = 4.5V ID= 75mA
VGS = 10V ID= 0.5A
VGS = 10V ID= 0.5A
VDS = 25V
VGS = 0V
f = 1MHz
VDD = 30V VGEN = 10V
RL= 150ΩRG= 25Ω
ID= 0.2A
60 70
0.8 3.0
-10
1.0
1.0
75
5
9
0.4
2.5
100
60
25
5
10
10
V
nA
μA
mA
mA
Ω
V
ms
pF
ns
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
* Pulse Test: PW = 80 μs , δ≤1%
Parameter Test Conditions Min. Typ. Max. Unit
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 7022
Issue: 1