© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1Publication Order Number:
NGTB40N120L/D
NGTB40N120LWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications. Offering
both low on−state voltage and minimal switching loss, the IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
•Low Saturation Voltage using Trench with Field Stop Technology
•Low Switching Loss Reduces System Power Dissipation
•Low Gate Charge
•5 ms Short−Circuit Capability
•These are Pb−Free Devices
Typical Applications
•Inverter Welding Machines
•Microwave Ovens
•Industrial Switching
•Motor Control Inverter
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage VCES 1200 V
Collector current
@ TC = 25°C
@ TC = 100°C
IC80
40
A
Pulsed collector current, Tpulse
limited by TJmax
ICM 320 A
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF80
40
A
Diode pulsed current, Tpulse limited
by TJmax
IFM 320 A
Gate−emitter voltage VGE $20 V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD260
104
W
Short−Circuit Withstand Time
VGE = 15 V, VCE = 600 V, TJ ≤ 150°C
Tsc 5ms
Operating junction temperature range TJ−55 to +150 °C
Storage temperature range Tstg −55 to +150 °C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TO−247
CASE 340L
STYLE 4
C
G
40 A, 1200 V
VCEsat = 1.90 V
Eoff = 1.40 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB40N120LWG TO−247
(Pb−Free)
30 Units / Rail
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
40N120L
AYWWG
G
E
C
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2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.48 °C/W
Thermal resistance junction−to−case, for Diode RqJC 1.5 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mAV(BR)CES 1200 − − V
Collector−emitter saturation voltage VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 25 A, TJ = 150°C
VCEsat 1.45
−
1.90
2.1
2.35
−
V
Gate−emitter threshold voltage VGE = VCE, IC = 400 mAVGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
ICES −
−
−
−
0.5
2.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V IGES − − 200 nA
DYNAMIC CHARACTERISTIC
Input capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Cies −10,400 −pF
Output capacitance Coes −245 −
Reverse transfer capacitance Cres −185 −
Gate charge total
VCE = 600 V, IC = 40 A, VGE = 15 V
Qg−420 −nC
Gate to emitter charge Qge −95 −
Gate to collector charge Qgc −178 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn-on delay time
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
td(on) −140 −
ns
Rise time tr−40 −
Turn-off delay time td(off) −360 −
Fall time tf−132 −
Turn-on switching loss Eon −5.5 −
mJ
Turn-off switching loss Eoff −1.40 −
Turn-on delay time
TJ = 125°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
td(on) −134 −
ns
Rise time tr−44 −
Turn-off delay time td(off) −380 −
Fall time tf−185 −
Turn-on switching loss Eon −6.8 −
mJ
Turn-off switching loss Eoff −2.6 −
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A, TJ = 150°C
VF−
−
1.6
1.8
1.8
−
V
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TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
543210
0
20
40
60
80
100
160
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
12840
0
20
40
60
80
100
160
Figure 5. VCE(sat) vs. TJFigure 6. Typical Capacitance
TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
130100704010−20−50
0
0.5
1.0
3.5
2001401208040200
10
100
1000
100,000
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
CAPACITANCE (pF)
VGE = 20 to 11 V
TJ = 25°C
10 V
9 V
8 V
7 V
543210
0
20
40
60
80
100
140
IC, COLLECTOR CURRENT (A)
VGE = 20 to 13 V
TJ = 150°C
10 V
9 V
8 V
7 V
543210
0
20
100
40
80
60
160
IC, COLLECTOR CURRENT (A)
VGE = 20 to 11 V
TJ = −40°C10 V
9 V
8 V
TJ = 25°C
TJ = 150°C
160
10,000
7 V
120
140 120
140
120 120
140
1.5
2.0
2.5
IC = 80 A
IC = 40 A
IC = 10 A
IC = 5 A
60 100 160 180
Cies
Coes
Cres
3.0
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TYPICAL CHARACTERISTICS
Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge
VF
, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC)
1.51.00.50
0
20
40
60
80
120
140
Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
140120100806040200
0
2
4
8
0
1000
Figure 11. Switching Loss vs. ICFigure 12. Switching Time vs. IC
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
16
0
4
6
12
564840322416
1000
IF
, FORWARD CURRENT (A)
VGE, GATE−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
3.0
100
160
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
64
2.0
20
15
10
5
0
0 60 120 180 240 300 360 420 480
100
10
1
20 40 60 80 100 120 140 160
24 32 40 48 56 64
100
10
1
2.5
TJ = 25°C
TJ = 150°C
VCE = 600 V
Eon
Eoff
tf
td(on)
tr
td(off)
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
Eon
Eoff
2
8
10 tf
td(on)
tr
td(off)
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
3
5
6
7
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TYPICAL CHARACTERISTICS
Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg
Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W)
756555453525155
3
9
12
18
756555453525155
10,000
Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
725675625575525475425375
0
4
12
775725575425375
1
10
100
1000
Figure 17. Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000100101
0.01
10
100
1000
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
IC, COLLECTOR CURRENT (A)
85
VCE = 600 V
VGE = 15 V
IC = 40 A
TJ = 150°C
85
VCE = 600 V
VGE = 15 V
IC = 40 A
TJ = 150°C
775
VGE = 15 V
IC = 40 A
Rg = 10 W
TJ = 150°C
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0
1000
100
10
1
6
15
Eon
Eoff
tf
td(on)
tr
td(off)
Figure 18. Reverse Bias Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000100101
1
10
100
1000
IC, COLLECTOR CURRENT (A)
VGE = 15 V, TC = 125°C
2
8
6
10
Eon
Eoff
475 525 625 675
VGE = 15 V
IC = 40 A
Rg = 10 W
TJ = 150°C
tf
td(on)
tr
td(off)
1
0.1
dc operation
1 ms
50 ms
100 ms
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TYPICAL CHARACTERISTICS
Figure 19. IGBT Transient Thermal Impedance
PULSE TIME (sec)
1000100100.10.010.0010.00010.000001
0.001
0.01
0.1
1
R(t) (°C/W)
Figure 20. Diode Transient Thermal Impedance
10.00001
PULSE TIME (sec)
1000100100.10.010.0010.00010.000001
0.001
0.1
1
10
R(t) (°C/W)
10.00001
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
RqJC = 0.48
RqJC = 1.5
0.01
Junction
C1C2
R1R2
Ci = ti/Ri
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Ri (°C/W) ti (sec)
1.48E−4
0.002
0.03
0.19655
0.414
0.5
Case
Cn
Rn
0.1
2.0
0.345
0.0934
Junction
C1C2
R1R2
Ci = ti/Ri
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Ri (°C/W) ti (sec)
1.76E−4
0.002
0.03
0.04030
0.060
0.090
Case
Cn
Rn
0.1
2.0
0.176
0.093
1.0E−40.01616
Figure 21. Test Circuit for Switching Characteristics
NGTB40N120LWG
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7
Figure 22. Definition of Turn On Waveform
NGTB40N120LWG
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Figure 23. Definition of Turn Off Waveform
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9
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
N
P
A
K
W
F
D
G
U
E
0.25 (0.010) MYQS
J
H
C
4
123
−T−
−B−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2 PL
3 PL
0.63 (0.025) MTBM
−Q−
LDIM MIN MAX MIN MAX
INCHESMILLIMETERS
A20.32 21.08 0.800 8.30
B15.75 16.26 0.620 0.640
C4.70 5.30 0.185 0.209
D1.00 1.40 0.040 0.055
E1.90 2.60 0.075 0.102
F1.65 2.13 0.065 0.084
G5.45 BSC 0.215 BSC
H1.50 2.49 0.059 0.098
J0.40 0.80 0.016 0.031
K19.81 20.83 0.780 0.820
L5.40 6.20 0.212 0.244
N4.32 5.49 0.170 0.216
P--- 4.50 --- 0.177
Q3.55 3.65 0.140 0.144
U6.15 BSC 0.242 BSC
W2.87 3.12 0.113 0.123
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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