UF1501/SUF1507/S VISHAY Vishay Lite-On Power Semiconductor 1.5A UltraFast Rectifier Features Diffused junction Ultrafast switching for high efficiency High current capability and low forward voltage drop @ Surge overload rating to 50A peak Low reverse leakage current Plastic material - UL Recognition flammability classification 94V0 Absolute Maximum Ratings 14450 Tj = 25C Repetitive peak reverse voltage UF1501/S | Varu 50 Vv =Working peak reverse voltage UFi502/S | =VrRwu 100 Vv =DC Blocking voltage UF1503/S =VpR 200 V UF1504/S 400 Vv UF1505/S 600 Vv UF1506/S 800 Vv UF1507/S 1000 Vv Peak forward surge current lesm 50 A Average forward current Ta=50C lFay 1.5 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage lp=1.5A UF1501/S1503/S Ve 1 Vv UF1504/S Ve 1.3 Vv UF1505/S1507/S Ve 1.7 Vv Reverse current Tp=25C IR 5 uA Ta=100C IR 100 | pA Reverse recovery time ||l-F=1A, IR=0.5A, UF1501/S1504/S ter 50 ns rr=0.25A UF1505/S1507/S tre 75 | ns Diode capacitance VpR=4V, f=1MHz UF1501/S1504/S Cp 35 pF UF1505/S1507/S Cp 20 pF Thermal resistance RthJA 70 KAW junction to ambient Rev. A2, 24-Jun-98UF1501/SUF1507/S war Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) ~ 1.5 Single phase half-wave x 60 <x 60 Hz resistive or inductive load ~~ = c o G 1.2 5 6 > 40 2 2 = 09 2 a N 3 z N Le o N 1) 0.6 = NJ D oO N w r= -.20 oO x > << 03 a INN a i = ~... ? ~ 0 - 0 25 50 75 100 125 150 175 200 1 10 100 15462 Tamb Ambient Temperature (C ) 15464 Number of Cycles at 60 Hz Figure 1. Max. Average Forward Current vs. Figure 3. Max. Peak Forward Surge Current vs. Ambient Temperature Number of Cycles 10 100 Tj = 25C _ iL f=1 MHz re a = UF1501-UF1503 2 UF1501-UF1504 S 1.0 ow 5 5 o 2 E 10 LUF1505-UF 1507 oO = o CG mr ol UF1505-UF1507 2 I ao a I UF1504 a Tj = 25C Iz Pulse Width = 300 0.01 i 1 0.6 0.8 1.0 1.2 1.4 1 10 100 15463 Ve Forward Voltage ( V ) 15465 Vr Reverse Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 2 (4) Rev. A2, 24-Jun-98UF1501/SUF1507/S VISHAY Dimensions in mm Vishay Lite-On Power Semiconductor ~ Suffix Designates DO-41 Package No Suffix Designates DO-15 Package D0-41 U0-15 Dim Min Max Min Max A [25.40 : 25.40 : + noe B 4.06 5.21 5.50 1.62 technical drawings C 0.71 0.664 0.686 0.889 seeitections D 2.00 2.12 2.60 3.6 1446 All Dimensions in mm Case: molded plastic Polarity: cathode band Approx. weight: DO-41 0.35 grams, DO-15 0.40 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4)UF1501/SUF1507/S Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98