Standard Power MOSFETs RFK25N18, RFK25N20 N-Channel Enhancement-Mode Power Field-Effect Transistors 25 A, 180 V- 200 V ros(On) = 0.15.2 Features: g SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics High input impedance @ Majority carrier device The RFK25N18 and RFK25N20* are n-channel enhance- ment-mode silicon-gate power field-effect transistors de- signed for applications such as switching regulators, switch- ing converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be oper- ated directly from integrated circuits. The RFK-types are supplied in the JEDEC TO-204AE steel package. *The RFK25N18 and RFK25N20 types were formerly RCA developmental numbers TA9295A and TA9295B, respectively. MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25 C): DRAIN-SOURCE VOLTAGE ......... 0. ccc e cece eee tree etree Voss DRAIN-GATE VOLTAGE, Rgs=t1 MQ... . ccc cee cece eee eects Vocr GATE-SOURCE VOLTAGE ....... 00. cece cece erect een n tenes Ves DRAIN CURRENT, RMS Continuous ......... 6... e cece ee eens lo Pulsed 2.00... ccc eee eee eee nnn net eeene tom POWER DISSIPATION @ Tc=25C woo cece cece center een e tenes Pr Derate above T,=25C OPERATING AND STORAGE TEMPERATURE .......----....06- T,, Tsta File Number 1500 $ 92CS-33761 N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS DRAIN SOURCE {FLANGE ) GATE 92s-3780! JEDEC TO-204AE RFK25N18 RFK25N20 180 200 Vv 180 200 Vv +20 v 25 A 60 A 150 Ww _ 1.2 _____. WC -55to+150 eee PSStandard Power MOSFETs RFK25N18, RFK25N20 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25 C unless otherwise specified. LIMITS . TEST CHARACTERISTICS SYMBOL CONDITIONS RFK25N18 RFK25N20 UNITS MIN. MAX. MIN. MAX. Drain-Source Breakdown Voltage BVoss Ip=1 mA 180 - 200 _ Vv Vas=0 Gate Threshold Voltage Ves(th) Ves=Vps 2 4 2 4 Vv Ip=1 mA Zero Gate Voltage Drain Current loss Vos=145 V _ 1 _ _ Vos= 160 Vv _ _ _ 1 Tc=125C uA Vos= 145 V _ 50 _ Vos=160 V - _ _ 50 Gate-Source Leakage Current less Ves=+20 V _ 100 _ 100 nA Vps=0 Drain-Source On Voltage Vos(on)* ID=12.5A _ 1.875 _ 1.875 Ves=10 Vv Vv Ip=25 A _ 5 - 5 Ves=10 V Static Drain-Source On Resistance Tos(on)* Ip=12.5 A _ 15 15 Q Ves=10 V Forward Transconductance Cis Vos=10 V 7 _ 7 _ mho lp>=12.5A Input Capacitance Ciss Vos=25 V _ 3500 3500 Output Capacitance Coss Ves=0 V _ 900 _ 900 pF Reverse Transfer Capacitance Crss f= 1MHz _ 400 400 Turn-On Delay Time ta(on) Vpp=100 V 40(typ) 80 40(typ) 80 Rise Time t, 1p=12.5A 150(typ) 225 150(typ) 225 ns Turn-Off Delay Time ta(off) Rgen=Rgs=50 2 300(typ) 400 300(typ) 400 Fall Time tr Vas=10 V 120(typ) 200 120(typ) 200 Thermal Resistance Rsc RFK25N 18, Junction-to-Case RFK25N20 Series _ 0.83 0.83 C/W *Pulsed: Pulse duration = 300 ws max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS TEST LIMITS CHARACTERISTIC SYMBOL CONDITIONS RFK25N18 RFK25N20 UNITS MIN. MAX. MIN. MAX. Diode Forward Voltage Vsp Isp=12.5 A = 1.4 _- 1.4 Vv (r=4A , Reverse Recovery Time tr die/d=100 A/us 300(typ) 300(typ) ns Pulse Test: Width < 300 ys, duty cycle < 2%. 3-349Standard Power MOSFETs RFK25N18, RFK25N20 CASE TEMPERATURE (Tp) = 25C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) COLLECTOR CURRENT (Ig) A RFKZ5NIS RFKZSN20 ORAIN - TO- SOURCE VOLTAGE (Vps) V 92CS-327157R1 Fig. 1 - Maximum safe operating areas for all types. Yes* Vos imA THRESHOLD [Yestth}] & NORMALIZED 9 @ 9 qi 0 50 100 CASE TEMPERATURE (Tco) C JUNCTION TEMPERATURE (Tj) *C 9208-37159 92Cs- 3758 Fig. 2 Power vs. temperature derating curve for all types. Fig. 3 Typical normalized gate threshold voltage as a function of junction temperature for ail types. 1p712.5A Vps7!0V Veg*+lov PULSE TEST PULSE CURATION =80 pS DUTY CYCLES 2% ON-STATE ORAIN CURRENT [Ip(on)]A z 7 x & 2 & 8 3 a JUNCTION TEMPERATURE (Tj) *C GATE - TO - SOURCE VOLTAGE (Vgg} V 92CS-37160 92CS- 37161 Fig. 4 Normalized drain-to-source on resistance to junction Fig. 5 Typical transfer characteristics for all types. temperature for all types. 3-350Standard Power MOSFETs RFK25N18, RFK25N20 200 T T t 10 PULSE TEST BYoss 60] PULSE DURATION =80 x: GATE DUTY CYCLES 2% SOURCE ie VOLTAGE 78 150 a Von = Voss Yoo = Voss L RL = 8a a z - Ig (RE 46 2 a $ Veg = 10 3 5 100 1 2 Xo 75 Voss 0.75 Vogs 18 = [ 0.50 Vongs, 9.50 Ypgs' "> 3 0.25 Voss 0.25 Voss. 2 so & 42 DRAIN SOURCE VOLTAGE Ig (REF) 80 ach 2 5 6 7 S DRAIN-TO-SOURCE VOLTAGE (Vps)V TIME M Tf ieroseconds o2ce-s7603 secs. aries Fig. 6 - Normalized switching waveforms for constant gate-current. Fig. 7 Typical saturation characteristics for all types. Refer to RCA application notes AN-7254 and AN-7260. 3000 w $ z 3 6S a #& | 300 ze % 2000 wl we Se = 2 a % e & 8 8 e a 2 < z 4 1000 < 004 e & 9 nm O 10 20 30 40 50 60 7O DRAIN CURRENT (Ip)A ORAIN- TO- SOURCE VOLTAGE (Vgs)V 9208-37164 9205-37165 Fig. 8 Typical drain-to-source on resistance as a function Fig. 9 Capacitance as a function of drain-to-source of drain current for ail types. voltage for all types. TEST Te 2 28C 4] PULSE DURATION = 60 82 = +h25ee p 10 TO SCOPE = Vp = KELVIN 100 Vv 6 CONTACT 2 2 2 z > w g = 5 > a z 3 2 z < KE = = = o c 2 4 6 8 10 12 14 16 18 S ae eae ee L DRAIN -TO-SOURCE CURRENT(Ip)A = 92CS- 37382 92CS- 37166 Fig. 10 Typical forward transconductance as a function Fig. 11 Switching Time Test Circuit of drain current for alf types. 3-351