Semiconductor Group 1 Mar-19-1996
BAT 15-03W
Silicon Schottky Diode
• DBS mixer applications to 12 GHz
• Low noise figure
• Low barrier type
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAT 15-03WP/white Q62702- 1 = A 2 = C SOD-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
V
R 4 V
Forward current
I
F 100 mA
Total power dissipation
T
S = 70°C
P
tot 100 mW
Operating temperature range
T
op - 55 ... + 150 °C
Storage temperature
T
stg - 55 ... + 150
Thermal Resistance
Junction ambient 1)
R
thJA ≤ 770 K/W
Junction - soldering point
R
thJS ≤ 690
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Q62702-A1104
Semiconductor Group 2 Mar-19-1996
BAT 15-03W
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
(BR) = 5 µA
V
(BR) 4 - - V
Forward voltage
I
F = 1 mA
I
F = 10 mA
V
F
-
- 0.32
0.23 0.41
0.32
AC characteristics
Diode capacitance
V
R = 0 ,
f
= 1 MHz
C
T- - 0.35 pF
Differential forward resistance
I
F 10mA/ 50 mA
R
F- 5.5 - Ω
Semiconductor Group 3 Mar-19-1996
BAT 15-03W
Forward Current
I
F =
f
(
V
F)Reverse current
I
R =
f
(
T
A)
Diode capacitance
C
T =
f
(
V
R)
f
= 1MHz
Semiconductor Group 4 Mar-19-1996
BAT 15-03W
Package
