VS-1N1...A, VS-1N36..A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A FEATURES * Voltage ratings from 50 V to 1000 V * High surge capability * Low thermal impedance * High temperature rating * Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 DO-4 (DO-203AA) * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 12 A Package DO-4 (DO-203AA) Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) TC 50 Hz 60 Hz 50 Hz 60 Hz IFSM I2t TJ Range VRRM Note * JEDEC(R) registered values are in bold VALUES 12 150 230 240 260 240 -65 to +200 50 to 1000 UNITS A C A A2s C V ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE (TC = -65 C TO 200 C) V VR(RMS), MAXIMUM RMS REVERSE VOLTAGE (TC = -65 C TO 200 C) V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE (TC = -65 C TO 200 C) V VS-1N1199A 50 35 100 VS-1N1200A 100 70 200 VS-1N1201A 150 105 300 VS-1N1202A 200 140 350 VS-1N1203A 300 210 450 VS-1N1204A 400 280 600 VS-1N1205A 500 350 700 VS-1N1206A 600 420 800 VS-1N3670A 700 490 900 VS-1N3671A 800 560 1000 VS-1N3672A 900 630 1100 VS-1N3673A 1000 700 1200 VS-1N3624 1000 1200 1400 Notes * JEDEC(R) registered values are in bold * Basic part number indicates cathode to case; for anode to case, add "R" to part number, e.g., 1N1199RA VRM, MAXIMUM DIRECT REVERSE VOLTAGE (TC = -65 C TO 200 C) V 50 100 150 200 300 400 500 600 700 800 900 1000 1000 Revision: 11-Jan-18 Document Number: 93493 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N1...A, VS-1N36..A Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t TEST CONDITIONS 180 sinusoidal conduction Half cycle 50 Hz sine wave or 6 ms rectangular pulse Half cycle 60 Hz sine wave or 5 ms rectangular pulse Half cycle 50 Hz sine wave or 6 ms rectangular pulse Half cycle 60 Hz sine wave or 5 ms rectangular pulse t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms I2t Maximum for individual device fusing Maximum I2t for individual device fusing Maximum forward voltage drop VRRM = 50 V VRRM = 100 V VRRM = 150 V VRRM = 200 V VRRM = 300 V VRRM = 400 V Maximum average reverse current VRRM = 500 V VRRM = 600 V VRRM = 700 V VRRM = 800 V VRRM = 900 V VRRM = 1000 V I2t (1) VFM IR(AV) (2) VALUES 12 150 Following any rated load condition and with rated VRRM applied 230 Following any rated load condition and with VRRM applied following surge = 0 V 275 UNITS A C 240 A 285 With rated VRRM applied following surge, initial TJ = 200 C 260 With VRRM = 0 V following surge, initial TJ = 200 C 370 340 240 A2s t = 0.1 ms to 10 ms, VRRM = 0 V following surge 3715 A2s IF(AV) = 12 A (38 A peak), TC = 25 C 1.35 3.0 2.5 2.25 2.0 1.75 1.5 1.25 1.0 0.9 0.8 0.7 0.6 V Maximum rated IF(AV) and TC mA Notes * JEDEC(R) registered values are in bold (1) I2t for time t = I2t x t x x (2) Maximum peak reverse current (I RM) under same conditions 2 x rated IR(AV) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating case and storage temperature range Maximum internal thermal resistance, junction to case Thermal resistance, case to sink minimum maximum minimum Mounting torque maximum minimum maximum SYMBOL TEST CONDITIONS TC, TStg UNITS -65 to 200 C RthJC DC operation 2.0 RthCS Mounting surface, smooth, flat and greased 0.5 C/W Torque applied to nut; non-lubricated threads Torque applied to nut; lubricated threads Torque applied to device case; lubricated threads Approximate weight Case style VALUES JEDEC(R) 1.36 (12) 1.69 (15) 1.07 (9.45) N*m (lbf * in) 1.30 (11.55) 1.17 (10.35) 1.43 (12.65) 7.0 g 0.25 oz. DO-4 (DO-203AA) Note * JEDEC registered values are in bold Revision: 11-Jan-18 Document Number: 93493 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N1...A, VS-1N36..A Series 220 Vishay Semiconductors IF - Instantaneous Forward Current (A) Maximum Allowable Case Temperature (C) www.vishay.com Conduction Period 200 180 160 DC 140 +180 C Wave 120 +180 C Wave +120 C & 100 Wave +60 C & Wave 0 0 2 4 6 8 10 12 14 16 18 20 2 102 5 2 TJ = 200 C 2 1.0 0 ZthJC - Transient Thermal Impedance (C/W) Wave Wave 8 +120 C +60 C & & Wave Wave DC 6 TJ = 200C Conduction Period 4 2 0 0 2 4 6 8 10 Average Forward Current Over Full Cycle (A) 104 5 5 2 2 DC 5 +120 C +120 C 2 1.0 1.0 & & Wave Wave 103 5 Wave Wave 2 TJ = 200C Conduction Period 2 5 10 2 5 102 2 2.0 2.5 3.0 3.5 2 102 5 103 Average Forward Current Over Full Cycle (A) Fig. 3 - Maximum High Level Forward Power Loss vs. Average Forward Current Steady State Value = 2.0 C/W 1.0 5 2 10-1 5 2 10-2 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10 t - Square Wave Pulse Duration (s) Fig. 5 - Maximum Transient Thermal Impedance, Junction to Case vs. Pulse Duration Peak Half Sine Wave Forward Current (A) Average Forward Power Loss Over Full Cycle (W) 102 +180 C +180 C 1.5 10 5 Fig. 2 - Maximum Low Level Forward Power Loss vs. Average Forward Current 10 1.0 Instantaneous Forward Voltage (V) 12 +180 C +180 C 0.5 Fig. 4 - Maximum Forward Voltage vs. Forward Current 14 10 25 C 10 5 Average Forward Current Over Full Cycle (A) Fig. 1 - Average Forward Current vs. Maximum Allowable Case Temperature Average Forward Power Loss Over Full Cycle (W) 103 5 300 At Any Rated Load Condition And With Rated VRRM Applied Following Surge 200 60 Hz 100 0 1 1 50 Hz 2 4 6 8 10 20 40 60 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 6 - Maximum Non-Repetitive 50 Hz Surge Current vs. Number of Current Pulses LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95311 Revision: 11-Jan-18 Document Number: 93493 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors DO-203AA (DO-4) DIMENSIONS in millimeters (inches) + 0.3 0 + 0.01 (0.08 0) 0.8 0.1 (0.03 0.004) 3.30 (0.13) 4.00 (0.16) 2 5.50 (0.22) MIN. R 0.40 R (0.02) O 1.80 0.20 (O 0.07 0.01) 20.30 (0.80) MAX. O 6.8 (0.27) 10.20 (0.40) MAX. 3.50 (0.14) 11.50 (0.45) 10.70 (0.42) 10/32" UNF-2A For metric devices: M5 x 0.8 11 (0.43) Document Number: 95311 Revision: 30-Jun-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-1N1206A VS-1N3670A VS-1N1206RA VS-1N3672A VS-1N3671A VS-1N3673A VS-1N1200A VS-1N1201RA VS-1N1202RA VS-1N1199A VS-1N1203A VS-1N1199RA VS-1N1204RA VS-1N3673RA VS-1N1201A VS1N1202A VS-1N1203RA VS-1N3671RA VS-1N1200RA VS-1N1205A VS-1N1204A