VS-1N3670A - Vishay Semiconductors

VS-1N1...A, VS-1N36..A Series

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Revision: 11-Jan-18 1Document Number: 93493

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A

FEATURES

• Voltage ratings from 50 V to 1000 V

• High surge capability

• Low thermal impedance

• High temperature rating

• Can be supplied as JAN and JAN-TX devices in

accordance with MIL-S-19500/260

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912



Note

• JEDEC® registered values are in bold

ELECTRICAL SPECIFICATIONS

Notes

• JEDEC® registered values are in bold

• Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA

PRIMARY CHARACTERISTICS

IF(AV) 12 A

Package DO-4 (DO-203AA)

Circuit configuration Single

DO-4 (DO-203AA)

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

IF(AV)

12 A

TC150 °C

IFSM

50 Hz 230 A

60 Hz 240

I2t50 Hz 260 A2s

60 Hz 240

TJ-65 to +200 °C

VRRM Range 50 to 1000 V

VOLTAGE RATINGS

TYPE NUMBER

VRRM, MAXIMUM

REPETITIVE PEAK

REVERSE VOLTAGE

(TC = -65 °C TO 200 °C)

VR(RMS), MAXIMUM RMS

REVERSE VOLTAGE

(TC = -65 °C TO 200 °C)

VRSM, MAXIMUM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

(TC = -65 °C TO 200 °C)

VRM, MAXIMUM DIRECT

REVERSE VOLTAGE

(TC = -65 °C TO 200 °C)

VS-1N1199A 50 35 100 50

VS-1N1200A 100 70 200 100

VS-1N1201A 150 105 300 150

VS-1N1202A 200 140 350 200

VS-1N1203A 300 210 450 300

VS-1N1204A 400 280 600 400

VS-1N1205A 500 350 700 500

VS-1N1206A 600 420 800 600

VS-1N3670A 700 490 900 700

VS-1N3671A 800 560 1000 800

VS-1N3672A 900 630 1100 900

VS-1N3673A 1000 700 1200 1000

VS-1N3624 1000 1200 1400 1000

VS-1N1...A, VS-1N36..A Series

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Revision: 11-Jan-18 2Document Number: 93493

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• JEDEC® registered values are in bold

(1) I2t for time tx = I2t x tx

(2) Maximum peak reverse current (IRM) under same conditions  2 x rated IR(AV)

Note

• JEDEC registered values are in bold

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current 

at case temperature IF(AV) 180° sinusoidal conduction 12 A

150 °C

Maximum peak one cycle non-repetitive

surge current IFSM

Half cycle 50 Hz sine wave

or 6 ms rectangular pulse Following any rated load

condition and with rated

VRRM applied

230

Half cycle 60 Hz sine wave

or 5 ms rectangular pulse 240

Half cycle 50 Hz sine wave

or 6 ms rectangular pulse Following any rated load

condition and with VRRM

applied following surge = 0 V

275

Half cycle 60 Hz sine wave

or 5 ms rectangular pulse 285

Maximum I2t for fusing

I2t

t = 10 ms With rated VRRM applied

following surge,

initial TJ = 200 °C

260

A2s

t = 8.3 ms 240

Maximum I2t for individual

device fusing

t = 10 ms With VRRM = 0 V following

surge, initial TJ = 200 °C

370

t = 8.3 ms 340

Maximum I2t for individual

device fusing I2t (1) t = 0.1 ms to 10 ms, VRRM = 0 V following surge 3715 A2s

Maximum forward voltage drop VFM IF(AV) = 12 A (38 A peak), TC = 25 °C 1.35 V

Maximum average

reverse current

VRRM = 50 V

IR(AV) (2) Maximum rated IF(AV) and TC

3.0

VRRM = 100 V 2.5

VRRM = 150 V 2.25

VRRM = 200 V 2.0

VRRM = 300 V 1.75

VRRM = 400 V 1.5

VRRM = 500 V 1.25

VRRM = 600 V 1.0

VRRM = 700 V 0.9

VRRM = 800 V 0.8

VRRM = 900 V 0.7

VRRM = 1000 V 0.6

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating case and

storage temperature range TC, TStg -65 to 200 °C

Maximum internal thermal

resistance, junction to case RthJC DC operation 2.0

°C/W

Thermal resistance,

case to sink RthCS Mounting surface, smooth, flat and greased 0.5

Mounting torque

minimum Torque applied to nut; non-lubricated threads 1.36 (12)

N · m

(lbf · in)

maximum 1.69 (15)

minimum Torque applied to nut; lubricated threads 1.07 (9.45)

maximum 1.30 (11.55)

minimum Torque applied to device case; lubricated threads 1.17 (10.35)

maximum 1.43 (12.65)

Approximate weight 7.0 g

0.25 oz.

Case style JEDEC®DO-4 (DO-203AA)

VS-1N1...A, VS-1N36..A Series

www.vishay.com Vishay Semiconductors

Revision: 11-Jan-18 3Document Number: 93493

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Average Forward Current vs.

Maximum Allowable Case Temperature

Fig. 2 - Maximum Low Level Forward Power Loss vs.

Average Forward Current

Fig. 3 - Maximum High Level Forward Power Loss vs.

Average Forward Current

Fig. 4 - Maximum Forward Voltage vs. Forward Current

Fig. 5 - Maximum Transient Thermal Impedance,

Junction to Case vs. Pulse Duration

Fig. 6 - Maximum Non-Repetitive 50 Hz Surge Current vs.

Number of Current Pulses

Maximum Allowable Case Temperature (°C)

Average

Forward Current Over Full Cycle (A)

+180 °C Wave

+60 °C &

Wave

+120 °C &

Wave

Conduction Period

2468 1210 14 1816 20

200

220

180

160

140

120

100

Average Forward Power Loss

Over Full Cycle (W)

Average

Forward Current Over Full Cycle (A)

TJ = 200°C

Conduction Period

24 6810

+180 °C Wave

+120 °C & Wave

+60 °C & Wave

Average Forward Power Loss

Over Full Cycle (W)

Average

Forward Current Over Full Cycle (A)

102

1.0

1.0 10

25 102

25 103

103

104

102

+180 °C Wave

+120 °C & Wave

= 200°C

Conduction Period

IF - Instantaneous Forward Current (A)

Instantaneous Forward Voltage (V)

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

102

103

1.0

25 °C

TJ = 200 °C

Square Wave Pulse Duration (s)

thJC

Transient Thermal Impedance (°C/W)

1.0

10-1

10-2

25 25 25 25 25

1 1010-1

10-2

10-3

10-4

Steady State Value = 2.0 °C/W

Peak Half Sine Wave Forward Current (A)

Number Of Equal Amplitude

Half Cycle Current Pulses (N)

2 4 6 8 10 20 40 6011

100

200

300

At Any Rated Load Condition And With

Rated VRRM Applied Following Surge

60 Hz

50 Hz

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95311

Document Number: 95311 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 30-Jun-08 1

DO-203AA (DO-4)

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

3.30 (0.13)

4.00 (0.16)

5.50 (0.22) MIN.

10.20 (0.40)

MAX.

11.50 (0.45)

10.70 (0.42)

10/32" UNF-2A

For metric devices: M5 x 0.8

0.8 ± 0.1

(0.03 ± 0.004)

R 0.40

R (0.02)

Ø 6.8 (0.27)

Ø 1.80 ± 0.20

(Ø 0.07 ± 0.01)

3.50 (0.14)

20.30 (0.80) MAX.

11 (0.43)

+ 0.3

(0.08 )

+ 0.01

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Revision: 08-Feb-17 1Document Number: 91000

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1N1202A VS-1N1203RA VS-1N3671RA VS-1N1200RA VS-1N1205A VS-1N1204A