VUO36-14NO8 3~ Rectifier Standard Rectifier Module VRRM = 1400 V I DAV = 27 A I FSM = 550 A 3~ Rectifier Bridge Part number VUO36-14NO8 - ~ ~ ~ + Features / Advantages: Applications: Package: FO-B Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Diode for main rectification For three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Industry standard outline RoHS compliant 1/4" fast-on terminals Easy to mount with one screw IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c VUO36-14NO8 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1500 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1400 V IR reverse current VF VR = 1400 V TVJ = 25C 40 A TVJ = 150C 1.5 mA TVJ = 25C 1.04 V 1.23 V 0.93 V 15 A IF = 45 A IF = 15 A IF = 45 A TVJ = 125 C TC = 85C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1.18 V T VJ = 150 C 27 A TVJ = 150 C 0.76 V d= for power loss calculation only Ptot typ. VR = 1400 V IF = forward voltage drop min. 9.1 m 7 K/W 1 K/W TC = 25C 17 W t = 10 ms; (50 Hz), sine TVJ = 45C 550 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 150 C 470 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 505 t = 10 ms; (50 Hz), sine TVJ = 45C 1.52 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.48 kAs TVJ = 150 C 1.11 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 1.06 kAs 18 pF 20130529c VUO36-14NO8 Package Ratings FO-B Symbol I RMS Definition Conditions RMS current per terminal min. Tstg storage temperature T VJ virtual junction temperature mounting torque 1.8 typ. max. 100 Unit A -40 125 C -40 150 C 2.2 Nm Weight MD d Spp/App d Spb/Apb VISOL 20 creepage distance on surface | striking distance through air terminal to terminal 9.0 7.0 mm terminal to backside 10.0 10.0 mm 3000 V 2500 V t = 1 second isolation voltage t = 1 minute g 50/60 Hz, RMS; IISOL 1 mA Logo XXX XX-XXXXX YYWW Marking on product Ordering Standard Date Code Part Number VUO36-14NO8 Equivalent Circuits for Simulation I V0 R0 Marking on Product VUO36-14NO8 * on die level Delivery Mode Box Code No. 465151 T VJ = 150 C Rectifier V 0 max threshold voltage 0.76 V R 0 max slope resistance * 7.9 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c VUO36-14NO8 Outlines FO-B 10 0.2 22.1 0.5 6.3 x 0.8 12 0.3 D E 8 0.3 12 0.3 28.5 0.2 C B A 28.5 0.2 - IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved ~ ~ ~ + Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c VUO36-14NO8 Rectifier 450 60 50 50 Hz 0.8 x V RRM 1600 VR = 0 V 400 1200 40 IFSM350 IF 30 [A] [A] 300 250 400 TVJ = 25C 0 0.4 0.8 200 10-3 1.2 10-2 10-1 Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode [W] 10 Fig. 3 I2t vs. time per diode 24 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 6 1 t [ms] t [s] 10 Ptot 100 VF [V] 8 TVJ = 150C [A s] TVJ = 150C 10 800 2 20 TVJ = 125C 150C TVJ = 45C 2 It TVJ = 45C DC = 0.6 KW 20 0.8 KW 1 KW 2 KW 4 KW 8 KW 1 0.5 0.4 16 0.33 IF(AV)M 0.17 12 0.08 [A] 4 8 2 4 0 0 0 2 4 6 8 10 0 25 50 75 100 125 150 0 175 25 50 TA [C] IF(AV)M [A] 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 8 6 Constants for ZthJC calculation: ZthJC 4 [K/W] 2 0 1 10 100 1000 10000 i Rth (K/W) ti (s) 1 0.040 0.005 2 0.150 0.030 3 1.710 0.400 4 5.100 2.300 100000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c