T4-LDS-0305-2, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 1 of 7
2N5415U4 – 2N5416U4
Compliant
PNP Silicon Low-Power Transistor
Qualified per MIL-PRF-19500/485
Qualified Levels:
JAN, JANT X, JANTXV
and JANS
DESCRIPTION
This family of 2N5415U4 and 2N5416U4 epitaxial planar transistors are military qualified up to
a JANS level for high-re lia bility appl ic ations . These devices are also available in the long-
leaded TO-5, short-le ad ed T O-39 and low profile UA packaging.
U4 Package
Also available in:
TO-5 package
(long-leaded)
2N5415 – 2N5416
TO-39 (TO-205AD)
package
(short-leaded)
2N5415S – 2N5416S
UA package
(surface mount)
2N5415UA – 2N5416UA
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N5415 thr ough 2N 5416 series
• JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485.
(See part nomenclature for all available options.)
• RoHS compliant
APPLICATIONS / BENEFITS
• General purpo se tr an si stors for low power applications requiring high frequency switching
• Low package profile
• Military and other high-reliabi lity applica tions
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise noted
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol 2N5415U4 2N5416U4 Unit
Collector-Emitter Voltage VCEO 200 300 V
Collector-Base Voltage VCBO 200 350 V
Emitter-Base Voltage VEBO 6.0 6.0 V
Collector Current IC 1.0 1.0 A
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
°C
Thermal Resi stan ce Jun cti on-to-Ambient RӨJA 145
o
C/W
Thermal Resi stan ce Jun cti on-to-Case RӨJC 12
o
C/W
Total Power Dissipation
@ TA = +2 5 °C (1)
@ TC = +25 °C (2) PT 1
15 W
Notes: 1. Derate linearly 6.90 mW/°C for TA > +25 °C
2. Derate linearly 86 mW/°C for TC > +25 °C
T4-LDS-0305-2, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 2 of 7
2N5415U4 – 2N5416U4
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, aluminum nitride (AlN) ceramic body with gold over nickel plated kovar lid
• TERMINALS: Gold over nickel pla ted surface mount term ina tion s
• MARKING: Part number, date code, manufacturer’s ID
• POLARITY: PNP
• TAPE & REEL option: Standard per EIA-481D. Consult factory for quantities
• WEIGHT: Approximately 0.125 grams (125 milligrams)
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N5415 U4
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level
Blank = Commercial
SMD package
JEDEC type number
(see Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-base open-circuit output capacitance
ICEO
Collector cutoff current, base open
ICEX
Collector cut of f curr ent, circuit bet ween bas e and emitter
IEBO
Emitter cutoff current, collector open
hFE
Common-emitter static forward current transfer ratio
VCEO
Collector-emitter voltage, base open
VCBO
Collector-emitter voltage, emitter open
VEBO
Emitter-base voltage, collector open
T4-LDS-0305-2, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 3 of 7
2N5415U4 – 2N5416U4
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
OFF CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO
200
300
V
I
C
= 50 mA, I
B
= 5 mA,
L = 25 mH; f = 30 – 60 Hz
2N5415U4
2N5416U4
Emitter-Base Cutoff Current
VEB = 6.0 V
IEBO 20 µA
Collector-Emitter Cutoff Current
ICEX 50 µA
V
CE
= 200 V, V
BE
= 1.5 V
VCE = 300 V, VBE = 1.5 V
2N5415U4
2N5416U4
Collector-Emitter Cutoff Current
ICEO1 50 µA
V
CE
= 150 V
VCE = 250 V
2N5415U4
2N5416U4
Collector-Emitter Cutoff Current
ICEO2 1 mA
V
CE
= 200 V
VCE = 300 V
2N5415U4
2N5416U4
Collector-Base Cutoff Current
ICBO1 50 µA
V
CB
= 175 V
VCB = 280 V
2N5415U4
2N5416U4
V
CB
= 200 V
VCB = 350 V
2N5415U4
2N5416U4
ICBO2 500 µA
V
CB
= 175 V, T
A
= +150 ºC
VCB = 280 V, TA = +150 ºC
2N5415U4
2N5416U4
ICBO3 1 mA
ON CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Forward-Current Transfer Ratio
IC = 50 mA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 50 mA, VCE = 10 V, TA = +150 ºC
hFE
30
15
15
120
Collector-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 5 mA
VCE(sat) 2.0 V
Base-Emitter Voltage Non-Saturation
I
C
= 50 mA, V
CE
= 10 V
VBE 1.5 V
DYNAMIC CHA RACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-
|hfe| 3 15
Circuit Forward Current Transfer Ratio
IC = 10 mA, VCE = 10 V, f = 5 MHz
Small-signal short Circuit Forward-Current
hfe
25
Transfer Ratio
IC = 5 mA, VCE = 10 V, f ≤ 1 kHz
Output Capac ita nc e
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz
Cobo 15 pF
T4-LDS-0305-2, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 4 of 7
2N5415U4 – 2N5416U4
ELECTRICAL CHARACTERISTICS @ TA = +25 °C unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
VCC = 200 V, IC = 50 mA, IB1 = 5 mA
ton
1 µs
Turn-Off Time
VCC = 200 V, IC = 50 mA, IB1 = IB2 = 5 mA
toff
10 µs
SAFE OPERATING AREA
(See SOA graph below and MIL-STD-750, method 3053)
DC Tests
TC = +25 °C, tP = 0.4 s, 1 Cycle
Test 1
VCE = 10 V, IC = 1 A
Test 2
VCE = 100 V, IC = 100 mA
Test 3
VCE = 200 V, IC = 24 mA
Test 4
VCE = 300 V, IC = 10 mA
See SOA graphs on next page
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2N5415U4 – 2N5416U4
SAFE OPERATING AREA
VCE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area (TJ = 200 ºC, U4 on copper sink TC = 25 ºC)
VCE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area (TJ = 200 ºC)
I
C
– COLLECTOR CURRE NT - A
I
C
– COLLECTOR CURRE NT - A
T4-LDS-0305-2, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 6 of 7
2N5415U4 – 2N5416U4
GRAPHS
Time (s)
FIGURE 1
Thermal impedance graph (RӨJA)
Theta (oC/W)
T4-LDS-0305-2, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 7 of 7
2N5415U4 – 2N5416U4
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for information only.
3. In accordance with ASME Y14.5M, diameters are
equivalent to Φx symbology.
Dimensions
Ltr
Inch
Millimeters
Min
Max
Min
Max
BL
0.215
0.225
5.46
5.72
BW
0.145
0.155
3.68
3.94
CH
0.049
0.075
1.24
1.91
LH
-
0.02
-
0.51
LW1
0.135
0.145
3.43
3.68
LW2
0.047
0.057
1.19
1.45
LL1
0.085
0.125
2.16
3.18
LL2
0.045
0.075
1.14
1.91
LS1
0.070
0.095
1.78
2.41
LS2
0.035
0.048
0.89
1.22
Q1
0.030
0.070
0.76
1.78
Q2
0.020
0.035
0.51
0.89
TERMINAL
1
COLLECTOR
2
BASE
3
EMITTER
