2SA1478 / 2SC3788
No.2253-1/5
Features
•High breakdown voltage : VCEO≥200V.
•Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.2pF (NPN), 1.7pF (PNP).
•Adoption of FBET process.
Specifications ( ) : 2SA1478
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)200 V
Collector-to-Emitter Voltage VCEO (--)200 V
Emitter-to-Base Voltage VEBO (--)5 V
Collector Current IC(--)100 mA
Collector Current (Pulse) ICP (--)200 mA
Collector Dissipation PC1.3 W
Tc=25°C5W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)150V, IE=0A (--)0.1 µA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 µA
DC Current Gain hFE VCE=(--)10V, IC=(--)10mA 40* 320*
Continued on next page.
* : The 2SA1478 / 2SC3788 are classified by 10mA hFE as follws:
Rank C D E F
hFE 40 to 80 60 to 120 100 to 200 160 to 320
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN2253B
53007CB TI IM TC-00000705 / O3103TN(KT) /71598HA (KT)/3247TA, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
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instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
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SANYO Semiconductors
DATA SHEET
2SA1478 / 2SC3788
PNP / NPN Epitaxial Planar Silicon Transistors
High-Definition CRT Display
Video Output Applications
2SA1478 / 2SC3788
No.2253-2/5
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Gain-Bandwidth Product fTVCE=(--)30V, IC=--10mA 150 MHz
Output Capacitance Cob VCB=(--)30V, f=1MHz (2.6)1.7 pF
Reverce Trancefer Capacitance Cre VCB=(--)30V, f=1MHz (1.7)1.2 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)20mA, IB=(--)2mA (--)0.6 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)20mA, IB=(--)2mA (--)1.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0A (--)200 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)200 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A (--)5 V
Package Dimensions
unit : mm (typ)
7516A-002
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
0.8
0.75
2.4
4.8
0.8 0.7
8.0
4.0
1.0 1.0
3.6
1.4
1.6
1.5
1.7
7.5
3.0
15.5 11.0
3.3
3.0
123
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
ITR03743
0--1--2--3--4--5--6--7--8--9--10
--1
--2
--3
--4
--5
--6
--7
--8
IB=0µA
ITR03744
1067 89123450
0
2
4
6
8
10
12
14
16
18
20
2SA1478
IB=0µA
2SC3788
--40µA
--50µA
--30µA
--10µA
--20µA
80µA
100µA
120µA
140µA
160µA
60µA
40µA
20µA
2SA1478 / 2SC3788
No.2253-3/5
Gain-Bandwidth Product, fT -- MHz
fT -- ICfT -- IC
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- mA
DC Current Gain, hFE
hFE -- IC
Collector Current, IC -- mA
Collector Current, IC -- mA
DC Current Gain, hFE
hFE -- IC
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
IC -- VBE
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
--1.0 23 35757 --10 7--100
522
7
100
10
5
7
5
2
3
5
3
2
ITR03751
2SA1478
VCE=30V
1.0 23 35757 10 7100
522
7
100
10
5
2
3
7
1000
5
3
2
ITR03752
2SC3788
VCE=30V
1000
100
10
ITR03749
235757 7
3
25 2
--1.0 --10 --100
2
3
5
7
7
2
3
5
1.0 37723 575 10 100
522
7
10
5
100
5
3
2
3
2
ITR03750
2SA1478
VCE=10V 2SC3788
VCE=10V
Ta=75°C
25°
C
--25°C
Ta=75
°C
25
°
C
--25°C
ITR03745
0--20 --40 --60 --80 --100
0
--4
--2
--6
--8
--10
IB=0µA
ITR03746
60 70 80 1009040 5020 30100
0
2
3
1
4
5
6
7
8
9
10
2SA1478
IB=0µA
2SC3788
--40
µ
A
--50µA
--30µA
--20
µ
A
--10µA
60
µ
A
70
µ
A
80
µ
A
50µA
40
µ
A
30
µ
A
20
µ
A
10µA
ITR03747
0--0.2 --0.4 --0.6 --0.8 --1.0
0
--20
--40
--60
--80
--100
--120 2SA1478
VCE=10V
Ta=75
°C
25°
C
--25
°C
ITR03748
0 0.2 0.4 0.6 0.8 1.0
0
20
40
60
80
100
120 2SC3788
VCE=10V
Ta=75°C
25°C
--25°C
2SA1478 / 2SC3788
No.2253-4/5
VBE(sat) -- IC
Collector Current, IC -- mA
Collector Current, IC -- mA
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- mA
VCE(sat) -- IC
VBE(sat) -- IC
Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Cob -- VCB
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Reverce Transfer Capacitance, Cre -- pF
Collector-to-Base Voltage, VCB -- V
Cre -- VCB
Cre -- VCB
Reverce Transfer Capacitance, Cre -- pF
ITR03759
557
--
10 22
--
1.0 233577
--
100
--
1.0
--
10
5
7
3
5
7
3
2
2SA1478
IC / IB=10
ITR03760
7557 10 2
1.0 23357
100
3
1.0
5
3
5
7
2
10
7
2SC3788
IC / IB=10
ITR03757
557
--
10 22
--
1.0 233577
--
100
--
0.1
--
1.0
5
3
5
7
7
2
3
2
2SA1478
IC / IB=10
ITR03758
557 10 2
1.0 233577100
0.1
7
1.0
5
7
3
3
5
2
2SC3788
IC / IB=10
7
--
10 27
--
100 23
--
1.0 23 5575
1.0
7
10
5
7
5
3
2
2
ITR03753
2SA1478
f=1MHz 2SC3788
f=1MHz
710 27
100 23
1.0 23 5575
1.0
7
10
5
7
5
3
2
2
ITR03754
7
--
10 27
--
100 2
3
--
1.0 23 5575
1.0
7
10
5
7
5
3
2
2
ITR03755
2SA1478
f=1MHz 2SC3788
f=1MHz
710 27
100 23
1.0 23 5575
1.0
7
10
5
7
5
3
2
2
ITR03756
2SA1478 / 2SC3788
No.2253-5/5
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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Upon using the technical information or products described herein, neither warranty nor license shall be granted
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party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
This catalog provides information as of May, 2007. Specifications and information herein are subject
to change without notice.
Collector-to-Emitter Voltage, VCE -- V
A S O
Collector Current, IC -- mA
Ambient Temperature, Ta -- °C
PC -- Ta
Collector Dissipation, PC -- W
020406080100 120 140 160
0
2
1
1.3
3
6
4
5
ITR03762
ITR03761
DC operation
(Ta=25 C)
DC operation
10ms
1ms
500µs
10
3
5
7
2
2
3
5
3
2355
7
57 100 23
10
7
2
100
ICP=200mA
IC=100mA
2SA1478 / 2SC3788
Ideal radiation
2SA1478 / 2SC3788
(Tc=25°C)
No heat sink
(For PNP, minus sign is omitted.)
