IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology
withsoft,fastrecoveryanti-paralleldiode
IKW50N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
2
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
G
C
E
G
C
E
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IKW50N60H3 600V 50A 1.85V 175°C K50H603 PG-TO247-3
3
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
4
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Maximumratings
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC100.0
50.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 200.0 A
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs - 200.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF60.0
30.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 200.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
tSC
5
µs
PowerdissipationTC=25°C
PowerdissipationTC=100°C Ptot 333.0
167.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
junction - case Rth(j-c) 0.45 K/W
Diode thermal resistance,
junction - case Rth(j-c) 1.05 K/W
Thermal resistance
junction - ambient Rth(j-a) 40 K/W
5
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA 600 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.85
2.10
2.25
2.30
-
-
V
Diode forward voltage VF
VGE=0V,IF=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.65
1.67
1.65
2.05
-
-
V
Gate-emitter threshold voltage VGE(th) IC=0.80mA,VCE=VGE 4.1 5.1 5.7 V
Zero gate voltage collector current ICES
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
-
40.0
3500.0
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 30.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 2960 -
Output capacitance Coes - 116 -
Reverse transfer capacitance Cres - 96 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=480V,IC=50.0A,
VGE=15V - 315.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 13.0 - nH
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
IC(SC)
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
-
330
- A
6
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) - 23 - ns
Rise time tr- 37 - ns
Turn-off delay time td(off) - 235 - ns
Fall time tf- 24 - ns
Turn-on energy Eon - 1.45 - mJ
Turn-off energy Eoff - 0.91 - mJ
Total switching energy Ets - 2.36 - mJ
Tvj=25°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
rG=7.0Ω,Lσ=90nH,
Cσ=60pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Diode reverse recovery time trr - 130 - ns
Diode reverse recovery charge Qrr - 0.88 - µC
Diode peak reverse recovery current Irrm - 16.9 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -598 - A/µs
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=1000A/µs
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) - 23 - ns
Rise time tr- 31 - ns
Turn-off delay time td(off) - 273 - ns
Fall time tf- 24 - ns
Turn-on energy Eon - 1.42 - mJ
Turn-off energy Eoff - 1.13 - mJ
Total switching energy Ets - 2.55 - mJ
Tvj=175°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
rG=7.0Ω,Lσ=90nH,
Cσ=60pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Diode reverse recovery time trr - 217 - ns
Diode reverse recovery charge Qrr - 2.40 - µC
Diode peak reverse recovery current Irrm - 22.9 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -307 - A/µs
Tvj=175°C,
VR=400V,
IF=30.0A,
diF/dt=1000A/µs
7
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V,
rG=7Ω)
f,SWITCHINGFREQUENCY[kHz]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0
20
40
60
80
100
120
140
TC=80°
TC=110°
TC=80°
TC=110°
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0.1
1
10
100
tp=1µs
10µs
50µs
100µs
200µs
500µs
DC
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
50
100
150
200
250
300
350
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
90
100
8
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Figure 5. Typicaloutputcharacteristic
(Tj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0123456
0
25
50
75
100
125
150
175
200
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6. Typicaloutputcharacteristic
(Tj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0123456
0
25
50
75
100
125
150
175
200
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
5 6 7 8 9 10 11 12
0
50
100
150
200
Tj=25°C
Tj=175°C
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tj,JUNCTIONTEMPERATURE[°C]
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
0 25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
3.5
IC=25A
IC=50A
IC=100A
9
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=7Ω,testcircuitinFig.E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
10 20 30 40 50 60 70 80 90 100
10
100
td(off)
tf
td(on)
tr
Figure 10. Typicalswitchingtimesasafunctionofgate
resistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=50A,testcircuitinFig.E)
rG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
0 5 10 15 20 25
10
100
td(off)
tf
td(on)
tr
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,VCE=400V,VGE=15/0V,IC=50A,
rG=7Ω,testcircuitinFig.E)
Tj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
10
100
td(off)
tf
td(on)
tr
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0,8mA)
Tj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
0 25 50 75 100 125 150 175
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
typ.
min.
max.
10
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=7Ω,testcircuitinFig.E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
10 20 30 40 50 60 70 80 90 100
0
1
2
3
4
5
6
7
8
Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=50A,testcircuitinFig.E)
rG,GATERESISTOR[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
2 6 10 14 18 22
0
1
2
3
4
5
Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,VCE=400V,VGE=15/0V,IC=50A,
rG=7Ω,testcircuitinFig.E)
Tj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Eoff
Eon
Ets
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,Tj=175°C,VGE=15/0V,IC=50A,
rG=7Ω,testcircuitinFig.E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
200 250 300 350 400 450
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Eoff
Eon
Ets
11
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Figure 17. Typicalgatecharge
(IC=50A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 50 100 150 200 250 300 350
0
2
4
6
8
10
12
14
16
120V
480V
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 10 20 30
10
100
1000 Cies
Coes
Cres
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTj=25°C)
VGE,GATE-EMITTERVOLTAGE[V]
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
10 12 14 16 18 20
150
250
350
450
550
650
750
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTj≤150°C)
VGE,GATE-EMITTERVOLTAGE[V]
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
10 11 12 13 14 15
0
3
6
9
12
15
12
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
7.0E-3
4.4E-5
2
0.03736378
1.0E-4
3
0.09205027
7.2E-4
4
0.1299574
8.3E-3
5
0.1835461
0.07425315
Figure 22. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.04915956
7.5E-6
2
0.2254532
2.2E-4
3
0.3125229
2.3E-3
4
0.2677344
0.01546046
5
0.1951733
0.1078904
Figure 23. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,REVERSERECOVERYTIME[ns]
800 900 1000 1100 1200
0
50
100
150
200
250
300
Tj=25°C, IF = 50A
Tj=175°C, IF = 50A
Figure 24. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr,REVERSERECOVERYCHARGE[µC]
800 900 1000 1100 1200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Tj=25°C, IF = 50A
Tj=175°C, IF = 50A
13
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
Figure 25. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irr,REVERSERECOVERYCURRENT[A]
800 900 1000 1100 1200
10
14
18
22
26
30
Tj=25°C, IF = 50A
Tj=175°C, IF = 50A
Figure 26. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
800 900 1000 1100 1200
-700
-600
-500
-400
-300
-200
-100
0
Tj=25°C, IF = 50A
Tj=175°C, IF = 50A
Figure 27. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5
0
10
20
30
40
50
60
70
80
90
100
Tj=25°C
Tj=175°C
Figure 28. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Tj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
0 25 50 75 100 125 150 175
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
IF=15A
IF=30A
IF=60A
14
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
PG-TO247-3
15
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
t
a
a
b
b
t
d(off)
t
f
t
r
t
d(on)
90% I
C
10% I
C
90% I
C
10% I
C
t
90% V
GE
v
GE
(t)
t
t
i
C
(t)
v
CE
(t)
90% V
GE
v
GE
(t)
t
t
i
C
(t)
v
CE
(t)
t
t
1
t
4
2% I
C
10% V
GE
2% V
CE
t
2
t
3
16
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-12
RevisionHistory
IKW50N60H3
Revision:2014-03-12,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2010-07-26 Preliminary datasheet
2.1 2013-12-10 New value ICES max limit at 175°C
2.2 2014-03-12 Max ratings Vce, Tvj ≥ 25°C
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