Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER | [64R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IREM240 0 2N'7219 N-CHANNEL JANTX2E2NZ7219 G JAN TXV2E2N7219 8 (REF: MIL-S-19500/596] 200 Volt, 0.18 Ohm HEXFET Product Summary The HEXFET technology is the key to International Part Number | BVpss Rps(on) ip Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state IRFM240 200V 0.180 18A resistance combined with high transconductance. FEATURES: The HEXFET transistors also feature all of the well @ Repetitive Avalanche Rating established advantages of MOSFETs such as voltage . control, very fast switching, ease of paralleling and @ Isolated and Hermetically Sealed temperature stability of the electrical parameters. @ Alternative to TO-3 Package @ Si ive Requiremen They are well suited for applications such as switching Simple Drive equ ements power supplies and virtually any application where military Ml Ease of Paralleling and/or high reliability is required. @ Ceramic Eyelets CASE STYLE AND DIMENSIONS [2 } 0-72 (0-05 13.84. (0.545) 8.60 (0.260) a 73.50 (0.535) | 8.82 0.28) 1,27 (0.050) T7082 (0.040) 13.84 (0.545) Z 13.59 (0.535) 13.84 (0.545) T7.50 (0.505) 6.60 (0.260) 6.32 (0.249) 1.14 (0.045) =~ 3k $0755 (@.035) +| eee oe Perl O15 0.25 (0-010 GO| | ee) LEGEND 1 DRAIN 2 SOURCE 3 GATE NOTES: 1 DIMENSIONING & TOLERANCING PER ANS! Y14.5M - 1982. 2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) Conforms to JEDEC Outline TO-254AA" BERYLLIA WARNING PER MIL-S-19500 Dimensions in Millimeters and (Inches) SEE PAGE 1-316 For leadform configurations see page |-316, fig. 15 1-309IRFM240, JANTXV, JANTX-, 2N7219 Devices TaR Absolute Maximum Ratings Parameter IRFM240, JANTXV, JANTX.,, 2N7219 Units ID @ Vag = 10V, To = 25C Continuous Drain Current 18 Ip @ Veg = 1, To = 100C Continuous Drain Current HW A lpm Pulsed Drain Current 72 Pp @ To = 25C Max. Power Dissipation 125 Ww Linear Derating Factor 1.0 wik Ves Gate-to-Source Voltage +20 v E, Single Pulse Avalanche Energy @ 450 mJ as (See Fig. 12) laR Avalanche Current 18 A (See Ear) E Repetitive Avalanche Energy 125 mJ AR (See Fig. 13) dvidt Peak Diode Recovery dv/dt @ 50 Vins (See Fig. 13) Ty Operating Junction -55 to 150 Tstg Storage Temperature Range C Lead Temperature 300 (0.063 in. (1.6 mm) from case for 10s) Weight 9.3 (typical) 9g Electrical Characteristics @ 1, = 25C (Unless Otherwise Specified) Parameter Min. Typ. Max. Units Test Conditions BVoss Orain-to-Source Breakdown Voltage | 200 _ - v Ves = OW, Ip = 10mA ABVpgs/ATy Temperature Coefficient of - 0.29 _ viePG Reference to 25C, ID = 1.0 mA Breakdown Voltage R Static Drain-to-Source _ - 0.18 Vag = 10V, Ip = 11A DS(on} On-State Resistance a Ss p _ _ 0.25 Vas = 10V, Ip = 18A V@s(th) Gate Threshold Voltage 20 _ 40 v Vos = Ves: Ip = 250 xA Os Forward Transconductance 61 - _ S$) | Vos = 15V Ipg = 1A loss Zero Gate Voltage Drain Current _ _ 26 Vps = 08 x Max. Rating, Vag = OV A : = 250 X Vps = 08 x Max. Rating Vas = OV, Ty = 126C lass Gate-to-Source Leakage Forward 100 nA Ves = 20V lass Gate-to-Source Leakage Reverse - - -100 Ves = -20V Qg Total Gate Charge 32 - 60 Vag = 10V, ip = 184 Qgs Gate-to-Source Charge 2.2 _ 10.6 nc Vos = 0.5 x Max. Rating Qga Gate-to-Drain (Miller) Charge 14.2 - 376 See Fig. 6 and 14 taon) Turn-On Delay Time _ 20 Vpp = 100V, Ip = 11A, Rg = 9.148 t Rise Time _ _ 152 ns ta(otf) Turn-Off Delay Time _ = 58 See Fig. 11 ty Falt Time _ _ 67 Lp Internal Drain Inductance _ a7 - Measured from the drain Modified MOSFET symbo! lead, 6 mm (0.25 in) from | showing the internal 4 package to center of die. inductances. n Ls Internal Source Inductance - 87 - Measured from the source lead, 6 mm (0.25 in.) from package to source bonding pad. Cigs Input Capacitance - 1300 - Ves = OV, Vos = 25V Coss Output Capacitance 400 - F f = 1.0 MHz pl Crss Reverse Transfer Capacitance 130 - See Fig. 5 Coc Drain-to-Case Capacitance _ 12 - 1-310TaR IRFM240, JANTXV, JANTX-, 2N7219 Devices Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions Ig Continuous Source Current - 18 Modified MOSFET symbol showing the integral (Body Diode) A Reverse p-n junction rectifier. ISM (Bony Diode) a Current _ _ 72 8 f Vsp Diode Forward Voltage - _ 1.5 v Ty = 25C, Ig = 18A, Vag = Oo @ try Reverse Recovery Time _ - 500 nS Ty = 25C, Ip = 18A, difdt = 100 A/us QrrA Reverse Recovery Charge - - 53 ue Vop s 50V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. Thermal Resistance Parameter Min. Typ. Max. Units Test Conditions Rinuc Junction-to-Case -_ _ 1.0 Rinug Case-to-Sink _ 0.21 Kw | Mounting surface flat, smooth, and greased RihyA Junction-to-Ambient - _ 48 Typical socket mount Repetitive Rating: Pulse width limited by @ Igp s 18A, di/dt < 150 A/ps, KW = CW maximum junction temperature (see figure 9) Vop = BVpss, Ty s 150C WIK = W/C Refer to current HEXEET reliability report Suggested Rg = 9.1 9 @ @Vpp = 50V, Starting Ty = 25C i " + Puls idth 0 ; Duty Cych 2 L221 mH, Ag = 250, Pulse width < 300 ys; Duty Cycle < 2% Peak IL = 184 1-311IRFM240, JANTXV, JANTX-, 2N7219 Devices IeaR sot 100 Ip, DRAIN CURRENT (AMPERES) 4.5Y 20us PULSE WIOTH Te = 26C sov! 10 so! Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 40-1 Fig. 1 Typical Output Characteristics, Tc = 25C Ip, DRAIN CURRENT (AMPERES) Vps = 50V 20us PULSE WIDTH 4 Fig. 3 Typical Transfer Characteristics 5 6 8 10 Vg. GATE-TO-SQURCE VOLTAGE (VOLTS) 1-312 io! 10 Ip. ORAIN CURRENT (AMPERES) 4072 20us PULSE WIOTH Te = 150C 10 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Output Characteristics, Tc = 150C nN (NORMAL IZED) - ORAIN-TO-SOURCE ON RESISTANCE - os (on): Veg = 10V .0 -60 -40 -20 0 20 40 60 Ty. JUNCTION TEMPERATURE ( C) Fig. 4 - Normalized On-Resistance Vs. Temperature 100 120 140 160IaR IRFM240, JANTXV, JANTX-, 2N7219 Devices 3000 2500 @ 3 = _ 2 8 wy q 2 3 5 W 5 x 2 > a 8B <t 1 1000 e ' a Coss u < o 500 ; Crss 2 > FOR TEST CIRCUIT SEE FIGURE 14 {00 40! % 45 30 45 60 75 Vos: DRAIN~TO-SOURCE VOLTAGE (VOLTS) Qg. TOTAL GATE CHARGE (nC) Fig. 5 Typical Capacitance Vs. Drain-to-Source Fig. 6 Typical Gate Charge Vs. Gate-to-Source Voltage Voltage 5 TION IN THIS BY, Ros (ON) 101 Ip. ORAIN CURRENT (AMPERES) 5 Tgp, REVERSE GRAIN CURRENT (AMPERES) 10 Tc 7 2 T y= 150C Ves = OV o4 SINGLE PULSE 0.4 0. 0. .0 . A 6 o.12 5 4 2 5 49 2 5 4922 4 498 Ven, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Vpg, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage Fig. 8 Maximum Safe Operating Area 1-313IRFM240, JANTXV, JANTX-, 2N7219 Devices IaR 410 2 2 ft Y WW uw Zz oO a uv Wu ac z 0.4 x Pel lu 4 xr kr jt 4+ | | ta] NOTES: 4. DUTY FACTOR, D=ty/tp 10-2 2. PEAK Ty=Ppm Xx + Te 1075 1074 4073 4072 O.4 4 10 t,, RECTANGULAR PULSE DURATION (SECONDS) Fig. 9 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration R D Vos AWN D.U.T. F tt Vop Pulse Width <tps Duty Factor <0.1% tH Fig. 11a Switching Time Test Circuit Vos /Jo07.-."* fT 90% Ip, DRAIN CURRENT (AMPERES) | | | | 10% 25 100 125 150 Ves | Kt oO Tp. CASE TEMPERATURE ( C) taiony ty taco) t, Fig. 10 Maximum Drain Current Vs. Case Fig. 116 Switching Time Waveforms Temperature 1-314IaR IRFM240, JANTXV, JANTX-, 2N7219 Devices L Vv 0.500 Vary tp to obtain e required peak IL D.U.T. PEAK I, = 148A y = Vop = 50V 0.400 0.300 Fig. 12a Unclamped Inductive Test Circult 0.200 BYps5 0.100 Eas, SINGLE PULSE ENERGY (J Vv ps 9.0005 75 100 13 150 STARTING Ty, JUNCTIGN TEMPERATURE (c) Fig. 12c Maximum Avalanche Energy Vs. Starting Fig. 12b Unclamped Inductive Waveforms Junction Temperature Driver Gate Drive ; p= Pw D.U.T L<* Circuit Layout Considerations PW Period Period t-F + Low Stray Inductance a @ _* Ground Plane Low Leakage Inductance Current Transformer 4S im t<- @ D.U.T. ign Waveform + Reverse . Recovery J Body Diode Forward Current [7 Current et 7 @ D.U.T. Vpg Waveform Diode Recovery vit TN * dv/dt controlled by Ra Re-Applied i + Driver same type as D.U.T. t+ Vohaee f Body Diode * Isp controlled by Duty Factor D" > bo @ inductor Current * D.U.T. - Device Under Test ph Ripple < 5% Veg = 5V for Logic Level Devices Fig. 13 Peak Diode Recovery dv/dt Test Circuit 1-315IRFM240, JANTXV, JANTX-, 2N7219 Devices Current Regulator IfaR [ Same Type | as D.U.T. | en ol | it 12 5 | | uF CO + Qe D.U.T. JT. Vos 10V) 7 ) - Qe Qe Vas Vo PMA le |o Charge G 9 Current Sampling Resistors Fig. 14a Basic Gate Charge Waveform Fig. 146 Gate Charge Test Circuit ag 13.84 (0.545) [-B- 6.60 (0.260) 13.59 (0.535) o3 3.78 fe. 17.40 (0. oa 0S 13.84 ts 545) 21.98 (0.865) 75.59 (0.008) 20.95 (0.825) 6.32 (0.248) -E: 1414 (0.045) fa 3X 4,01 (0.158) 3. a o. 150) _-| lt 0.89 0.035) 3.61 0. sea ops Ps Ce Owe Q. 25 0. 010 LEGEND f 1 ic] 1 DRAIN 2 SOURCE 3. GATE NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M - 1982. 2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 3 LEADFORM IS AVAILABLE IN EITHER ORIENTATION: (B21) EXAMPLE: IRFM2400 EXAMPLE: IRFM240U (7 1.27 (0.050} 1.02 (0.040) 1,52 (0.060) R MIN. TE 4.83 (0.190) 3.81 (0. 150) Fig. 15 Optional Leadforms for Outline TO-254 BERYLLIA WARNING PER MIL-S-19500 Packages containing bderyliia shall not be ground, sandblasted, machined, or have other operations performed on them which will Produce beryilia or beryllium dust. Furthermere, beryllium oxide packages shail not be placed in acids that will produce fumes containing berylilum. 1-316