APM1101NU N-Channel Enhancement Mode MOSFET Features * Pin Description 100V/35A, D RDS(ON)=20m (Typ.) @ VGS=10V G RDS(ON)=30m (Typ.) @ VGS=5V * * Reliable and Rugged S Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications * Power Management in TV Inverter G S N-Channel MOSFET Ordering and Marking Information Package Code U : TO-252-3 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device APM1101N Assembly Material Handling Code Temperature Range Package Code APM1101N U: APM1101N XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines "Green" to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2010 1 www.anpec.com.tw APM1101NU Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TA=25C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage 25 Maximum Junction Temperature 150 C -55 to 150 C 5 A TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current I DP 300s Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation TC=25C 100 TC=100C 60 TC=25C 35 TC=100C 22 TC=25C 50 TC=100C 20 V A A W RJC Thermal Resistance-Junction to Case 2.5 C/W RJA Thermal Resistance-Junction to Ambient 50 C/W EAS Avalanche Energy, Single Pulsed 400 mJ Electrical Characteristics Symbol L=0.5mH (TA = 25C unless otherwise noted) Parameter Test Conditions APM1101NU Min. Typ. Max. 100 - - - - 1 - - 30 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) a VGS=0V, IDS=250A VDS=80V, VGS=0V TJ=85C V A Gate Threshold Voltage VDS=VGS, IDS=250A 2 3 4 V Gate Leakage Current VGS=25V, VDS=0V - - 100 nA VGS=10V, IDS=35A - 20 25 VGS=5V, IDS=20A - 30 40 ISD=5A, VGS=0V - 0.7 1.1 V - 100 - ns - 190 - nC Drain-Source On-State Resistance m Diode Characteristics a VSD trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2010 IDS=20A, dlSD/dt=100A/s 2 www.anpec.com.tw APM1101NU Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=30V, Frequency=1.0MHz VDD=30V, RL=30, IDS=1A, VGEN=10V, RG=6 Turn-off Fall Time Gate Charge Characteristics Qg Test Conditions APM1101NU Min. Typ. Max. - 0.75 - - 3300 - - 300 - - 165 - - 24 44 - 12 23 - 82 150 - 45 84 - 73 102 - 16 - - 19 - Unit b RG tf (TA = 25C unless otherwise noted) pF ns b Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=50V, VGS=10V, IDS=20A nC Note a : Pulse test ; pulse width300s, duty cycle2%. Note b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2010 3 www.anpec.com.tw APM1101NU Typical Operating Characteristics Power Dissipation Drain Current 40 60 35 50 ID - Drain Current (A) Ptot - Power (W) 30 40 30 20 25 20 15 10 10 5 o o 0 TC=25 C 0 20 0 40 60 80 100 120 140 160 180 TC=25 C,VG=10V 0 20 Tj - Junction Temperature (C) 60 80 100 120 140 160 Tj - Junction Temperature (C) Thermal Transient Impedance Safe Operation Area 200 Normalized Transient Thermal Resistance 2 100 Rd s(o n) Lim it 1ms ID - Drain Current (A) 40 10 10ms 100ms 1s 1 DC O TC=25 C 0.1 0.01 0.1 1 10 100 500 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 Mounted on 1in pad o RJA :50 C/W 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2010 1 4 www.anpec.com.tw APM1101NU Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 70 100 VGS= 6,7,8,9,10V 90 RDS(ON) - On - Resistance (m) 5V ID - Drain Current (A) 80 70 60 50 4.5V 40 30 4V 20 10 60 VGS=5V 50 40 30 VGS=10V 20 10 3.5V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 ID - Drain Current (A) VDS - Drain - Source Voltage (V) Drain-Source On Resistance Gate Threshold Voltage 1.6 90 IDS =250A IDS=35A 1.4 VGS - Gate-source Voltage (V) RDS(ON) - On - Resistance (m) 80 70 60 50 40 30 1.2 1.0 0.8 0.6 0.4 20 10 100 3 4 5 6 7 8 9 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2010 0 25 50 75 100 125 150 Tj - Junction Temperature (C) 5 www.anpec.com.tw APM1101NU Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 100 2.4 VGS = 10V IDS = 35A 2.0 IS - Source Current (A) Normalized On Resistance 2.2 1.8 1.6 1.4 1.2 1.0 0.8 o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 20m 0 25 50 75 0.1 0.0 100 125 150 0.6 0.8 1.0 1.2 Capacitance Gate Charge VDS=50V VGS - Gate-Source Voltage (V) 9 4000 3500 Ciss 3000 2500 2000 1500 1000 Coss 500 Crss 10 15 20 IDS = 20A 8 7 6 5 4 3 2 1 0 5 1.4 10 Frequency=1MHz 0 0.4 VSD - Source - Drain Voltage (V) 4500 0 0.2 Tj - Junction Temperature (C) 5000 C - Capacitance (pF) o Tj=150 C 10 25 30 35 40 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2010 0 10 20 30 40 50 60 70 80 QG - Gate Charge (nC) 6 www.anpec.com.tw APM1101NU Package Information TO-252-3 E A E1 c2 L4 H D D1 L3 b3 c b e SEE VIEW A 0 GAUGE PLANE SEATING PLANE 0.25 A1 L TO-252-3 S Y M B O L MIN. A 2.18 MILLIMETERS INCHES MAX. MIN. MAX. 2.39 0.086 0.094 0.005 0.13 A1 b VIEW A 0.50 0.89 0.020 0.035 0.215 b3 4.95 5.46 0.195 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 D 5.33 6.22 0.210 0.245 D1 4.57 6.00 0.180 0.236 E 6.35 6.73 0.250 0.265 E1 3.81 6.00 0.150 0.236 e 2.29 BSC 0.090 BSC H 9.40 10.41 0.370 0.410 L 0.90 1.78 0.035 0.070 L3 0.89 2.03 0.035 0.080 0 0.040 1.02 L4 0 8 0 8 Note : Follow JEDEC TO-252 . Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2010 7 www.anpec.com.tw APM1101NU Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application TO-252-3 A H T1 C d 16.4+2.00 13.0+0.50 330.0 2.00 50 MIN. 1.5 MIN. -0.00 -0.20 P0 P1 P2 D0 D1 1.5+0.10 4.00.10 8.00.10 2.00.05 1.5 MIN. -0.00 D W E1 F 20.2 MIN. 16.00.30 1.750.10 7.500.05 T A0 B0 K0 0.6+0.00 6.800.20 10.400.20 2.500.20 -0.40 (mm) Devices Per Unit Package Type TO-252-3 Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2010 Unit Tape & Reel Quantity 2500 8 www.anpec.com.tw APM1101NU Taping Direction Information TO-252-3 USER DIRECTION OF FEED Classification Profile Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2010 9 www.anpec.com.tw APM1101NU Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds 3 C/second max. 3C/second max. 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 C/second max. 6 C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time 25C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process - Classification Temperatures (Tc) 3 Package Volume mm Thickness <350 <2.5 mm 235 C 2.5 mm Volume mm 350 220 C 220 C 3 220 C Table 2. Pb-free Process - Classification Temperatures (Tc) Package Thickness <1.6 mm 1.6 mm - 2.5 mm 2.5 mm Volume mm <350 260 C 260 C 250 C 3 3 Volume mm 350-2000 260 C 250 C 245 C Volume mm >2000 260 C 245 C 245 C 3 Reliability Test Program Test item SOLDERABILITY HOLT PCT TCT Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2010 Method JESD-22, B102 JESD-22, A108 JESD-22, A102 JESD-22, A104 10 Description 5 Sec, 245C 1000 Hrs, Bias @ 125C 168 Hrs, 100%RH, 2atm, 121C 500 Cycles, -65C~150C www.anpec.com.tw APM1101NU Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : 886-2-2910-3838 Fax : 886-2-2917-3838 Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2010 11 www.anpec.com.tw