N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jan., 2010 www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM1101NU
Pin Description
Ordering and Marking Information
Features
Applications
• 100V/35A,
RDS(ON)=20mΩ (Typ.) @ VGS=10V
RDS(ON)=30mΩ (Typ.) @ VGS=5V
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
• Power Management in TV Inverter
Top View of TO-252-3
N-Channel MOSFET
G
S
D
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
APM1101N
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM1101N U : APM1101N
XXXXX XXXXX - Date Code
Assembly Material
G
D
S
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jan., 2010 www.anpec.com.tw2
APM1101NU
Absolute Maximum Ratings
Symbol
Parameter Rating Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 100
VGSS Gate-Source Voltage ±25 V
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
IS Diode Continuous Forward Current 5 A
TC=25°C 100
IDP 300µs Pulse Drain Current Tested TC=100°C 60 A
TC=25°C 35
ID Continuous Drain Current TC=100°C 22 A
TC=25°C 50
PD Maximum Power Dissipation TC=100°C 20 W
RθJC Thermal Resistance-Junction to Case 2.5 °C/W
RθJA Thermal Resistance-Junction to Ambient 50 °C/W
EAS Avalanche Energy, Single Pulsed L=0.5mH 400 mJ
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM1101NU
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 100
- - V
VDS=80V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current
TJ=85°C
- - 30 µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 2 3 4 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100
nA
VGS=10V, IDS=35A - 20 25
RDS(ON) a
Drain-Source On-State Resistance VGS=5V, IDS=20A - 30 40 mΩ
Diode Characteristics
VSDa Diode Forward Voltage ISD=5A, VGS=0V - 0.7 1.1 V
trr Reverse Recovery Time - 100
- ns
Qrr Reverse Recovery Charge IDS=20A, dlSD/dt=100A/µs
- 190
- nC
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jan., 2010 www.anpec.com.tw3
APM1101NU
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM1101NU
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Dynamic Characteristics b
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz
- 0.75
- Ω
Ciss Input Capacitance - 3300
-
Coss Output Capacitance - 300
-
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=30V,
Frequency=1.0MHz - 165
-
pF
td(ON) Turn-on Delay Time - 24 44
tr Turn-on Rise Time - 12 23
td(OFF) Turn-off Delay Time - 82 150
tf Turn-off Fall Time
VDD=30V, RL=30Ω,
IDS=1A, VGEN=10V,
RG=6Ω - 45 84
ns
Gate Charge Characteristics b
Qg Total Gate Charge - 73 102
Qgs Gate-Source Charge - 16 -
Qgd Gate-Drain Charge
VDS=50V, VGS=10V,
IDS=20A - 19 -
nC
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jan., 2010 www.anpec.com.tw4
APM1101NU
0.01 0.1 1 10 100 500
0.1
1
10
100
200
Rds(on) Limit
1s
TC=25OC
10ms
1ms
100ms
DC
020 40 60 80 100 120 140 160 180
0
10
20
30
40
50
60
TC=25oC
0 20 40 60 80 100 120 140 160
0
5
10
15
20
25
30
35
40
TC=25oC,VG=10V
Typical Operating Characteristics
Power Dissipation
Ptot - Power (W)
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Normalized Transient Thermal Resistance
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
1E-4 1E-3 0.01 0.1 1 10 100
1E-3
0.01
0.1
1
2
Mounted on 1in2 pad
RθJA :50oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jan., 2010 www.anpec.com.tw5
APM1101NU
-50 -25 025 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6 IDS =250µA
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
10
20
30
40
50
60
70
80
90
100
4.5V
3.5V
5V
4V
VGS= 6,7,8,9,10V
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Output Characteristics
RDS(ON) - On - Resistance (mΩ)
Drain-Source On Resistance
ID - Drain Current (A)
VGS - Gate - Source Voltage (V)Tj - Junction Temperature (°C)
Gate Threshold Voltage
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
RDS(ON) - On - Resistance (mΩ)
VGS - Gate-source Voltage (V)
020 40 60 80 100
0
10
20
30
40
50
60
70
VGS=5V
VGS=10V
3 4 5 6 7 8 9 10
10
20
30
40
50
60
70
80
90
IDS=35A
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jan., 2010 www.anpec.com.tw6
APM1101NU
0 5 10 15 20 25 30 35 40
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
Frequency=1MHz
Crss Coss
Ciss
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
1
10
100
Tj=150oC
Tj=25oC
Drain-Source On Resistance
Normalized On Resistance
Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)
Source-Drain Diode Forward
IS - Source Current (A)
VDS - Drain - Source Voltage (V)
C - Capacitance (pF)
Capacitance Gate Charge
QG - Gate Charge (nC)
VGS - Gate-Source Voltage (V)
Typical Operating Characteristics (Cont.)
0 10 20 30 40 50 60 70 80
0
1
2
3
4
5
6
7
8
9
10 VDS=50V
IDS = 20A
-50 -25 025 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
RON@Tj=25oC: 20mΩ
VGS = 10V
IDS = 35A
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jan., 2010 www.anpec.com.tw7
APM1101NU
Package Information
TO-252-3
S
Y
M
B
O
LMIN. MAX.
2.39
4.95 5.46
0.46 0.61
0.13
5.33
A
A1
b3
c
c2
D
D1
E
MILLIMETERS
b0.50 0.89
2.29 BSC
TO-252-3
4.57
6.35 6.73
6.22
0.090 BSC
MIN. MAX.
INCHES
0.094
0.020 0.035
0.195 0.215
0.018 0.024
0.210
0.180
0.250 0.265
2.18
0.245
0.086
0.005
E1
0.035
0.070
0.410
L3
H
L
e
9.40
0.90
0.46 0.89
1.78
10.41 0.370
0.035
0.018
0.040
L4 1.02
0.150
3.81
0.89 2.03 0.035 0.080
0 8°
0°8°
0°
0
0.25
GAUGE PLANE L
A1
VIEW A
SEATING PLANE
L4 L3
D
E
e
b3
H
A
SEE VIEW A
c2
bc
E1
D1
6.00
Note : Follow JEDEC TO-252 .
6.00
0.236
0.236
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jan., 2010 www.anpec.com.tw8
APM1101NU
Application
A H T1 C d D W E1 F
330.0±2.00
50 MIN.
16.4+2.00
-0.00
13.0+0.50
-0.20
1.5 MIN.
20.2 MIN.
16.0±0.30
1.75±0.10
7.50±0.05
P0 P1 P2 D0 D1 T A0 B0 K0
TO-252-3
4.0±0.10
8.0±0.10
2.0±0.05
1.5+0.10
-0.00
1.5 MIN.
0.6+0.00
-0.40 6.80±0.20
10.40±0.20
2.50±0.20
(mm)
Carrier Tape & Reel Dimensions
H
T1
A
d
A
E1
A
B
W
F
T
P0
OD0
BA0
P2
K0
B0
SECTION B-B
SECTION A-A
OD1
P1
Devices Per Unit
Package Type Unit Quantity
TO-252-3 Tape & Reel 2500
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jan., 2010 www.anpec.com.tw9
APM1101NU
Taping Direction Information
TO-252-3
USER DIRECTION OF FEED
Classification Profile
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jan., 2010 www.anpec.com.tw10
APM1101NU
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
Average ramp-up rate
(Tsmax to TP) 3 °C/second max. 3°C/second max.
Liquidous temperature (TL)
Time at liquidous (tL) 183 °C
60-150 seconds 217 °C
60-150 seconds
Peak package body Temperature
(Tp)* See Classification Temp in table 1 See Classification Temp in table 2
Time (tP)** within 5°C of the specified
classification temperature (Tc) 20** seconds 30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max. 6 °C/second max.
Time 25°C to peak temperature 6 minutes max. 8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Classification Reflow Profiles
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness Volume mm3
<350 Volume mm3
350-2000 Volume mm3
>2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness Volume mm3
<350 Volume mm3
≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Reliability Test Program
Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jan., 2010 www.anpec.com.tw11
APM1101NU
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
