HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2001. 04.24
Page No. : 1/4
H2N6718L HSMC Product Specifi cation
H2N6718L
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6718L is designed for general purpose medium power
amplifier and switching applications.
Features
• High Power: 850mW
• High Current: 1A
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 850 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltag e ...................................................................................... 100 V
VCEO Collector to Emitter Voltage................................................................................... 100 V
VEBO Emitter to Base Voltage............................................................................................. 5 V
IC Collector Current (Continue) ............................................................................................ 1 A
IC Collector Current (Pulse).................................................................................................. 2 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=100uA
BVCEO 100 - - V IC=1mA
BVEBO 5 - - V IE=10uA
ICBO - - 100 nA VCB=80V
*VCE(sat) - - 350 mV IB=35mA, IC= 350mA
*hFE1 80 - - VCE=1V, IC=50mA
*hFE2 50 - 300 VCE=1V, IC=250mA
*hFE3 20 - - VCE=1V, IC=500mA
fT 50 - - MHz VCE=10V, IC=50mA, f=100MHz
Cob - - 20 pF VCB=10 V, IE=0, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank A B
Range 50-115 95-300
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2001. 04.24
Page No. : 2/4
H2N6718L HSMC Product Specifi cation
Characteristics Curve
Current Gain & Collector Current
10
100
1000
0.1 1 10 100 1000 10000
Collector Curren t-IC (m A)
hFE
hFE @ VCE=1V hFE @ VCE=2V
hFE @ VCE=5V hFE@VCE=10V
Saturation Voltage & Collector C urrent
1
10
100
1000
0.1 1 10 100 1000 10000
Collector Curren t-IC (m A)
Satu ration Voltage (mV)
VCE(sat) @ IC=10IB
Saturation Voltage & Collector C urrent
100
1000
10000
1 10 100 1000 10000
Collector Curren t-IC (m A)
Satu ration Voltage (mV)
VBE(sat) @ I C=10IB
Collector Output Capacitance
1
10
100
0.1 1 10 100
Collector Base Volt ag e ( V)
Cap a c itance (pF)
Cob
Safe Oper atin g Area
0.01
0.1
1
10
1 10 100
Forward Vol tage-VCE (V)
Collector Curren t-IC (A)
1mS 100mS 1S
Cut off Fr equency & Col lect or Current
100
1000
1 10 100
Collector Curren t-IC (m A)
Cutoff Frequency (MHz )
fT @ VCE=10V
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2001. 04.24
Page No. : 3/4
H2N6718L HSMC Product Specifi cation
Power Derating
0
100
200
300
400
500
600
700
800
900
0 50 100 150 200
Ta(oC) , Am bient Temper atur e
PD(mW), Power Dissipation
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2001. 04.24
Page No. : 4/4
H2N6718L HSMC Product Specifi cation
TO-92 Dimension
*:Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56 α1-*5°-*5°
E - *0.0500 - *1.27 α2-*2°-*2°
F 0.1323 0.1480 3.36 3.76 α3-*2°-*2°
Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controll i ng dimens ion : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing m ethod, please contact your l ocal HSMC sal es office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin famil y, flammabilit y sol i d burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liabilit y for any cons equence of customer product design, infringem ent of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerit y Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O. C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu I ndust ri al Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
31
A
D
B
C
Iα1
E
F
α2
α3
G
H
2
Style : Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
HSMC Packa
g
e Code : A
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
Laser Mark
HSMC Logo
Part Number
Product Series
Ink Mark
