©2004 Fairchild Semiconductor Corporation Rev. B1, August 2004
MMBT5401
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage -150 V
V
CBO
Collector-Base V oltage -160 V
V
EBO
Emitter-Base Voltage -5.0 V
I
C
Collector Current - Continuous -600 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
BV
CEO
Collector-Emit ter Bre akdown Volt age * I
C
= -1.0mA, I
B
= 0 -150 V
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100µA, I
E
= 0 -160 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10µA, I
C
= 0 -5.0 V
I
CBO
Collector Cutoff Current V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
a
= 100°C-50
-50 nA
µA
I
EBO
Emi tter C u to ff C u r re n t V
EB
= -3.0V, I
C
=0 -50 nA
On Characteristics *
h
FE
DC Current Gain I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -50mA, V
CE
= -5.0V
50
60
50 240
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA -0.2
-0.5 V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA -1.0
-1.0 V
V
Small Signal Characterics
f
T
Current Gain Bandwidth Product I
C
= -10mA, V
CE
= -10V,
f = 100MHz 100 300 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
= 0, f = 1MHz 6.0 pF
N
F
Noise Figure I
C
= -250µA, V
CE
= -5.0V, R
S
= 1.0KΩ
f = 10Hz to 15.7KHz 8.0 dB
MMBT5401
PNP General Purpose Amplifier
• This device is designed as a general purpose amplifier and switch for
applications requiring high voltage.
SOT-23
B
E
C
Mark: 2L
©2004 Fairchild Semiconductor Corporation
MMBT5401
Rev. B1, August 2004
Thermal Charac t eris ti cs
T
a
=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
©2004 Fairchild Semiconductor Corporation Rev. B1, August 2004
MMBT5401
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current Figure 2. Collector-Emitter Saturation
Voltage vs Collector Current
Figure 3. Base-Emitter Saturation
Voltage vs Collector Current Figure 4. Base-Emitter On Voltage vs
Collector Current
Figure 5. Collector-Cutoff Current
vs Ambient Temperature Figure 6. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
1E-4 1E-3 0.01 0.1 1
0
50
100
150
200
- 40
o
C
25
o
C
125
o
C
V
CE
= 5V
h
FE
- TYPICAL PULSED CURRENT GAIN
I
C
- COLLECTOR CURRENT (A)
0.1 1 10 100
0.0
0.1
0.2
0.3
0.4
- 40
o
C
25
o
C
125
o
C
β
ββ
β
= 10
V
CESAT
- COLLE C TOR-EMITTER VOLTAGE (V)
I
C
- COLLECTOR CURRENT (mA)
0.1 1 10 100
0.2
0.4
0.6
0.8
1.0
125
o
C
25
o
C
- 40
o
C
β
ββ
β
= 10
V
BESAT
- BASE-EMITTER VOLTAGE (V)
I
C
- COLLECTOR CURRENT (mA)
0.1 1 10 100
0.2
0.4
0.6
0.8
1.0
- 40
o
C
25
o
C
125
o
C
V
CE
= 5V
V
BC(ON)
- BASE-EMITTER ON VOLTAGE (V)
I
C
- COLLECTOR CURRENT (mA)
Ω
β
β
25 50 75 100 125 150
0.1
1
10
100
T - AM BIE NT TEMPE RATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 100V
CB
°
CBO
Between Emitt er- Base
0.1 1 10 100 1000
170
180
190
200
210
220
RESISTAN CE (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
β
β
©2004 Fairchild Semiconductor Corporation Rev. B1, August 2004
MMBT5401
Typical Characteristics
(Continued)
Figure 7 . Input and Output Capac itance
vs Reverse Voltage Figure 8. Power Dissipation vs
Ambient Temperature
0.1 1 10 100
0
20
40
60
80
V - REVERSE BIAS VOLTAGE(V)
CAPACI TANCE (pF)
C
f = 1.0 M Hz
R
C
cb
eb
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
SOT-23
P
D
- POWER DISSIPATION (mW)
TEMPERATURE (
o
C)
Package Dimensions
MMBT5401
Dimensions in Millimeters
Rev. B1, August 2004©2004 Fairchild Semiconductor Corporation
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
©2004 Fairchild Semiconductor Corporation Rev. I11
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