SIEMENS BAR 64-03W Silicon PIN Diode e High voltage current controlled FF resistor for AF attenuator and swirches e Freqency range above 1 MHz @ Low resistance and short carrier lifetime @ For frequencies up to 3 GHz PS05176 Type |Marking Ordering Code Pin Configuration [Package 7) (tape and reel) 1 2 BAR 64-03W {2 Q62702-A1045 Cc | |_A_|SoOD-323 Maximum Ratings per Diode Parameter Symbol BAR 64-03W Unit Reverse voltage Va 200 v Forward current Ir 100 mA Total Power dissipation Ts < 25C Prot 250 mw Junction temperature Tj 150 C Operating temperature range Top 55 +150C C Storage temperature range Taig -5...4+150C C Thermai Resistance Junction-ambient [Ath uA | < 450 KAW 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 168 Edition AO1, 22.07.94SIEMENS BAR 64-03W Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Value Unit min. ityp. |max. DC Characteristics per Diode Breakdown voltage Vier) Vv fr=5pA 200 : : Forward voltage Ve v fe = 50 mA - - 14 Diode capacitance Cr pF Va = 20 V, f= 1 MHz : 0.23 0.35 Forward resistance G Q fe = 1 mA, f= 100 MHz - 12.5 120 te = 10 mA, f= 100 MHz - 2.1 3.8 fe = 100 mA, f= 100 MHz 0.85 {1.35 Charge carrier lifetime tL ps le =10mMA, R=6mMA, IR=3MA - 1.55 |- Series inductance Ls nH - 2.0 : Semiconductor Group 169 Edition A01, 22.07.94SIEMENS BAR 64-03W Forward resistance j= f (/<) f= 100 MHz 4 03 HD07135 rp 0 10? 10! 10"! 3 9 1 2 to# 107% 10 10' mA 10 oe i Forward current /- = f(V_) { 02 EHDO7137 mA I 10! 10 107! 107? Semiconductor Group 170 Diode capacitance Cy= f (Vp) f=1 MHz. 0.5 Cr pF fo. 0.3 0.2 0.1 HDO7136 | \ 10 v 20 Edition A01, 22.07.94