BCM857BV NEW PRODUCT 45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT563 Features Mechanical Data BVCEO > -45V IC = -100mA High Collector Current Pair of PNP Transistors That Are Intrinsically Matched (Note 1) 2% Matching on Current Gain (hFE) 2mV Matching on Base-Emitter Voltage (VBE) Fully Internally Isolated in a Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3) Halogen and Antimony Free. "Green" Device (Note 4) Qualified to AEC-Q101 for High Reliability Case: SOT563 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish -- Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e3 Weight: 0.003 grams (Approximate) C1 SOT563 C2 B2 B1 E1 E2 Top View Top View Pin-Out Device Symbol Ordering Information (Note 5) Product BCM857BV-7 Notes: Compliance AEC-Q101 Marking 1U5 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. Intrinsically matched pair as this is built with adjacent die from the same wafer. 2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 3. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 4. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT563 1U5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 BCM857BV Datasheet number: DS37433 Rev. 3 - 2 Mar 3 2016 D Apr 4 2017 E May 5 Jun 6 1 of 5 www.diodes.com 2018 F Jul 7 2019 G Aug 8 Sep 9 2020 H Oct O 2021 I Nov N Dec D March 2015 (c) Diodes Incorporated BCM857BV Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V IC -100 mA Peak Collector Current ICM -200 mA Peak Base Current IBM -200 mA Symbol Value Unit Power Dissipation. Total Device (Note 6) PD 500 mW Power Dissipation. Single Transistor (Note 7) PD 357 mW Thermal Resistance, Junction to Ambient Air (Note 6) RJA +250 C/W Thermal Resistance, Junction to Ambient Air (Note 7) RJA +350 C/W TJ, TSTG -65 to +150 C NEW PRODUCT Collector Current Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Operating and Storage Temperature Range ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Electrical Characteristics Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C (@TA = +25C, unless otherwise specified.) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic (Note 9) BVCBO -50 -- -- V IC = 100A, IB = 0 Collector-Emitter Breakdown Voltage BVCEO -45 -- -- V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -5 -- -- V IE = 100A, IC = 0 hFE 200 290 450 -- VCE = -5.0V, IC = -2.0mA DC Current Gain Matching (Note 10) hFE1/hFE2 0.98 1 -- -- VCE = -5.0V, IC = -2.0mA Collector-Emitter Saturation Voltage VCE(sat) -- -50 -200 -200 -400 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(sat) -- -760 -- mV IC = -10mA, IB = -0.5mA DC Current Gain Base-Emitter Voltage Test Condition VBE(on) -600 -650 -700 mV VCE = -5.0V, IC = -2.0mA VBE1(on) VBE2(on) -- -- 2 mV VCE = -5.0V, IC = -2.0mA Collector Cut-Off Current ICBO -- -- -- -- -15 -5.0 nA A VCB = -30V VCB = -30V, TA = +150C Emitter Cut-Off Current IEBO -- -- -100 nA VEB = -5.0V, IC = 0 Gain Bandwidth Product fT 100 175 -- MHz Collector-Base Capacitance CCBO -- -- 2.2 pF VCB = -10V, f = 1.0MHz Emitter-Base Capacitance CEBO -- 10 -- pF VEB = -0.5V, f = 1.0MHz Base-Emitter Voltage Matching (Note 11) Notes: VCE = -5.0V, IC = -10mA, f = 100MHz 6. For a device with two active die running at equal power, mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6 except for only one active die running. 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 9. Short duration pulse test used to minimize self-heating effect. 10. The smaller of the two values is taken as the numerator. 11. The smaller of the two values is subtracted from the larger value. BCM857BV Datasheet number: DS37433 Rev. 3 - 2 2 of 5 www.diodes.com March 2015 (c) Diodes Incorporated BCM857BV Typical Electrical Characteristics (@TA = +25C unless otherwise specified.) hFE, DC CURRENT GAIN MAX POWER DISSIPATION (W) See Note 6 100 10 See Note 7 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current Typical DC Current Gain vs. Collector Current 1 TEMPERATURE (C) Derating Curve 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) 0.5 VCE, COLLECTOR-EMITTER SATURATION VOLTAGE (V) NEW PRODUCT 1,000 0.4 0.3 100 0.2 0.1 0 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage Typical Collector-Emitter Saturation Voltage vs. Collector Current vs. Collector Current BCM857BV Datasheet number: DS37433 Rev. 3 - 2 10 1 10 100 I , COLLECTOR CURRENT (mA) ICC, COLLECTOR CURRENT (mA) Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current Typical Gain-Bandwidth Product vs. Collector Current 3 of 5 www.diodes.com March 2015 (c) Diodes Incorporated BCM857BV Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A NEW PRODUCT B C D G M K SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm H L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 Dimensions Z G X Y C1 C2 C1 G SOT563 2.2 1.2 0.375 0.5 1.7 0.5 Y X BCM857BV Datasheet number: DS37433 Rev. 3 - 2 4 of 5 www.diodes.com March 2015 (c) Diodes Incorporated BCM857BV IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Copyright (c) 2015, Diodes Incorporated www.diodes.com BCM857BV Datasheet number: DS37433 Rev. 3 - 2 5 of 5 www.diodes.com March 2015 (c) Diodes Incorporated Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Diodes Incorporated: BCM857BV-7