© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5 1Publication Order Number:
2N6515/D
NPN − 2N6515, 2N6517;
PNP − 2N6520
High Voltage Transistors
NPN and PNP
Features
•Voltage and Current are Negative for PNP Transistors
•These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter V oltage 2N6515
2N6517, 2N6520
VCEO 250
350
Vdc
Collector − Base Voltage 2N6515
2N6517, 2N6520
VCBO 250
350
Vdc
Emitter − Base Voltage 2N6515, 2N6517
2N6520
VEBO 6.0
5.0
Vdc
Base Current IB250 mAdc
Collector Current − Continuous IC500 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 W
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may af fect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D. See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
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COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP
12312
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
MARKING DIAGRAM
2N
65xx
AYWW G
G
xx = 15, 17, or 20
A = Assembly Location
Y = Year
WW = W ork Week
G= Pb−Free Package
(Note: Microdot may be in either location)
NPN − 2N6515, 2N6517; PNP − 2N6520
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0 ) 2N6515
2N6517, 2N6520
V(BR)CEO 250
350 −
−
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0 ) 2N6515
2N6517, 2N6520
V(BR)CBO 250
350 −
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0) 2N6515, 2N6517
2N6520
V(BR)EBO 6.0
5.0 −
−
Vdc
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0) 2N6515
(VCB = 250 Vdc, IE = 0) 2N6517, 2N6520
ICBO −
−50
50
nAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0) 2N6515, 2N6517
(VEB = 4.0 Vdc, IC = 0 ) 2N6520
IEBO −
−50
50
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc) 2N6515
2N6517, 2N6520
(IC = 10 mAdc, VCE = 10 Vdc) 2N6515
2N6517, 2N6520
(IC = 30 mAdc, VCE = 10 Vdc) 2N6515
2N6517, 2N6520
(IC = 50 mAdc, VCE = 10 Vdc) 2N6515
2N6517, 2N6520
(IC = 100 mAdc, VCE = 10 Vdc) 2N6515
2N6517, 2N6520
hFE 35
20
50
30
50
30
45
20
25
15
−
−
−
−
300
200
220
200
−
−
−
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat) −
−
−
−
0.30
0.35
0.50
1.0
Vdc
Base−Emitter Saturation V oltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
VBE(sat) −
−
−
0.75
0.85
0.90
Vdc
Base−Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc) VBE(on) − 2.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) fT40 200 MHz
Collector−Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.0 pF
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517
2N6520
Ceb −
−80
100
pF
SWITCHING CHARACTERISTICS
Turn−On Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton − 200 ms
Turn−Off Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff − 3.5 ms
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
NPN − 2N6515, 2N6517; PNP − 2N6520
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Figure 1. DC Current Gain
NPN 2N6515
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
hFE, DC CURRENT GAIN
200
100
20
30
50
70
VCE = 10 V TJ = 125°C
25°C
−55°C
Figure 2. DC Current Gain
NPN 2N6517
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
200
100
10
20
50
70
VCE = 10 V TJ = 125°C
25°C
−55°C
IC, COLLECTOR CURRENT (mA)
−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70
VCE = −10 V
TJ = 125°C
25°C
−55°C
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
100
20
30
50
70
IC, COLLECTOR CURRENT (mA)
−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70
f, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
T
f, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
T
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10
100
20
30
50
70
10
TJ = 25°C
VCE = 20 V
f = 20 MHz
TJ = 25°C
VCE = −20 V
f = 20 MHz
30
200
100
10
20
50
70
30
Figure 3. DC Current Gain
PNP 2N6520
Figure 4. Current−Gain − Bandwidth Product
NPN 2N6515, 2N6517 Figure 5. Current−Gain − Bandwidth Product
PNP 2N6520
NPN − 2N6515, 2N6517; PNP − 2N6520
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Figure 6. “On” Voltages
NPN 2N6515, 2N6517 Figure 7. “On” Voltages
PNP 2N6520
Figure 8. Temperature Coefficients
NPN 2N6515, 2N6517 Figure 9. Temperature Coefficients
PNP 2N6520
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
V, VOLTAGE (VOLTS)
1.4
1.2
0
0.6
0.8
1.0
IC, COLLECTOR CURRENT (mA)
−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
2.5
IC, COLLECTOR CURRENT (mA)
−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70
Figure 10. Capacitance
NPN 2N6515, 2N6517
VR, REVERSE VOLTAGE (VOLTS)
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
100
2.0
3.0
5.0
70
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
1.0
V, VOLTAGE (VOLTS)
0.4
0.2
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
−1.4
−1.2
0
−0.6
−0.8
−1.0
−0.4
−0.2
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = −10 V
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
RV, TEMPERATURE COEFFICIENTS (mV/ C)°
θ
RV, TEMPERATURE COEFFICIENTS (mV/ C)°
θ
2.0
1.5
1.0
0.5
0
−0.5
−1.0
−1.5
−2.0
−2.5
RqVC for VCE(sat)
RqVB for VBE
25°C to 125°C
−55°C to
25°C
−55°C to 125°C
IC
IB +10
RqVC for VCE(sat)
RqVB for VBE
25°C to 125°C
−55°C to
25°C
−55°C to 125°C
IC
IB +10
C, CAPACITANCE (pF)
7.0
10
20
30
50
−20
0
−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −10
0
TJ = 25°CTJ = 25°C
Ccb
Ceb
Ccb
Ceb
2.5
2.0
1.5
1.0
0.5
0
−0.5
−1.0
−1.5
−2.0
−2.5
100
2.0
3.0
5.0
70
1.0
7.0
10
20
30
50
Figure 11. Capacitance
PNP 2N6520
NPN − 2N6515, 2N6517; PNP − 2N6520
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5
Figure 12. Turn−On Time
NPN 2N6515, 2N6517
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
t, TIME (ns)
1.0k
20
10
IC, COLLECTOR CURRENT (mA)
−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
IC, COLLECTOR CURRENT (mA)
−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70
30
50
70
100
200
300
500
700
t, TIME (ns)
td @ VBE(off) = 2.0 V
tr
VCE(off) = 100 V
IC/IB = 5.0
TJ = 25°C
td @ VBE(off) = 2.0 V
tr
VCE(off) = −100 V
IC/IB = 5.0
TJ = 25°C
t, TIME (ns)
10k
100
200
300
500
700
1.0k
2.0k
3.0k
5.0k
7.0k
20
30
50
70
100
200
300
500
700
1.0k
2.0k
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
VCE(off) = −100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
ts
tf
ts
tf
1.0k
20
10
30
50
70
100
200
300
500
700
Figure 13. Turn−On Time
PNP 2N6520
Figure 14. Turn−Off Time
NPN 2N6515, 2N6517 Figure 15. Turn−Off Time
PNP 2N6520
Figure 16. Switching Time Test Circuit
+10.8 V
−9.2 V
+VCC
2.2 k 20 k
50
50 W SAMPLING SCOPE
1/2MSD7000
1.0 k
VCC ADJUSTED
FOR VCE(off) = 100 V
APPROXIMATELY
−1.35 V (ADJUST FOR V(BE)off = 2.0 V)
PULSE WIDTH ≈ 100 ms
tr, tf ≤ 5.0 ns
DUTY CYCLE ≤ 1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
NPN − 2N6515, 2N6517; PNP − 2N6520
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0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
RESISTANCE (NORMALIZED)
10k0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k
t, TIME (ms)
Figure 17. Thermal Response
500
200
100
50
20
10
5.0
2.0
1.0
0.5
IC, COLLECTOR CURRENT (mA)
0.5 1.0 2.0 5.0 10 20 50 100 200 500
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 18. Active Region Safe Operating Area Design Note: Use of Transient Thermal
Resistance Data
FIGURE A
tP
PPPP
t1
1/f
DUTYCYCLE +t1f +
t1
tP
PEAK PULSE POWER = PP
TA = 25°C
1.0 ms
10 ms
TC = 25°C
100 ms
100 ms
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
ZqJC(t) = r(t) • RqJC TJ(pk) − TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t)
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25°C)
SECOND BREAKDOWN LIMIT
CURVES APPLY
BELOW RATED VCEO
2N6515
2N6517, 2N6520
ORDERING INFORMATION
Device Package Shipping†
2N6515RLRMG TO−92
(Pb−Free) 2000 Ammo Pack
2N6517G TO−92
(Pb−Free) 5000 Unit / Bulk
2N6517RLRPG TO−92
(Pb−Free) 2000 Ammo Pack
2N6520RLRAG TO−92
(Pb−Free) 2000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
TO−92 (TO−226)
CASE 29−11
ISSUE AM
DATE 09 MAR 2007
STYLES ON PAGE 2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
SCALE 1:1
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 ---
N2.04 2.66
P1.50 4.00
R2.93 ---
V3.43 ---
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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© Semiconductor Components Industries, LLC, 2002
October, 2002 − Rev. 0
Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98ASB42022B
ON SEMICONDUCTOR STANDARD
TO−92 (TO−226)
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
PAGE 1 OF 3
TO−92 (TO−226)
CASE 29−11
ISSUE AM
DATE 09 MAR 2007
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 6:
PIN 1. GATE
2. SOURCE & SUBSTRATE
3. DRAIN
STYLE 11:
PIN 1. ANODE
2. CATHODE & ANODE
3. CATHODE
STYLE 16:
PIN 1. ANODE
2. GATE
3. CATHODE
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
STYLE 26:
PIN 1. VCC
2. GROUND 2
3. OUTPUT
STYLE 31:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. GATE
3. MAIN TERMINAL 2
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
STYLE 27:
PIN 1. MT
2. SUBSTRATE
3. MT
STYLE 32:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 8:
PIN 1. DRAIN
2. GATE
3. SOURCE & SUBSTRATE
STYLE 13:
PIN 1. ANODE 1
2. GATE
3. CATHODE 2
STYLE 18:
PIN 1. ANODE
2. CATHODE
3. NOT CONNECTED
STYLE 23:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 28:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 33:
PIN 1. RETURN
2. INPUT
3. OUTPUT
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 9:
PIN 1. BASE 1
2. EMITTER
3. BASE 2
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
STYLE 19:
PIN 1. GATE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. EMITTER
2. COLLECTOR/ANODE
3. CATHODE
STYLE 29:
PIN 1. NOT CONNECTED
2. ANODE
3. CATHODE
STYLE 34:
PIN 1. INPUT
2. GROUND
3. LOGIC
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. ANODE 1
2. CATHODE
3. ANODE 2
STYLE 20:
PIN 1. NOT CONNECTED
2. CATHODE
3. ANODE
STYLE 25:
PIN 1. MT 1
2. GATE
3. MT 2
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
STYLE 35:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
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© Semiconductor Components Industries, LLC, 2002
October, 2002 − Rev. 0
Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98ASB42022B
ON SEMICONDUCTOR STANDARD
TO−92 (TO−226)
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
PAGE 2 OF 3
DOCUMENT NUMBER:
98ASB42022B
PAGE 3 OF 3
ISSUE REVISION DATE
AM ADDED BENT−LEAD TAPE & REEL VERSION. REQ. BY J. SUPINA. 09 MAR 2007
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 11AM
Case Outline Number:
29
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North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
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