DATA SH EET
Product specification July 2001
DISCRETE SEMICONDUCTORS
MAC223 series
Triacs
July 2001 2 Rev 1.000
NXP Semiconductors Product specification
Triacs MAC223 series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX MAX. UNIT
intended for use in applications requiring
high bidirectional transient and blocking MAC223 A6 A8
voltage capability and high thermal
cycling performance. Typical V
DRM
Repetitive peak off-state 400 600 V
applications include motor control, voltages
industrial and domestic lighting, heating I
T(RMS)
RMS on-state current 25 25 A
and static switching. I
TSM
Non-repetitive peak on-state 230 230 A
current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
MAC223 A6 A8
V
DRM
Repetitive peak off-state - 400
1
600
1
V
voltages
I
T(RMS)
RMS on-state current full sine wave; T
mb
91 ˚C - 25 A
I
TSM
Non-repetitive peak full sine wave; T
j
= 25 ˚C prior to
on-state current surge
t = 20 ms - 190 A
t = 16.7 ms - 230 A
I
2
tI
2
t for fusing t = 10 ms - 180 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 30 A; I
G
= 0.2 A;
on-state current after dI
G
/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
T1T2
G
123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
July 2001 3 Rev 1.000
NXP Semiconductors Product specification
Triacs MAC223 series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance full cycle - - 1.0 K/W
junction to mounting base half cycle - - 1.4 K/W
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 6 50 mA
T2+ G- - 10 50 mA
T2- G- - 11 50 mA
T2- G+ - 23 75 mA
ILLatching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 8 40 mA
T2+ G- - 30 60 mA
T2- G- - 18 40 mA
T2- G+ - 15 60 mA
IHHolding current VD = 12 V; IGT = 0.1 A
T2+ - 7 30 mA
T2- - 12 30 mA
VTOn-state voltage IT = 30 A - 1.3 1.55 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
IDOff-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 100 300 - V/µs
off-state voltage exponential waveform; gate open circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 25 A; - 10 - V/µs
commutating voltage dIcom/dt = 9 A/ms; gate open circuit
tgt Gate controlled turn-on ITM = 30 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs
time dIG/dt = 5 A/µs
July 2001 4 Rev 1.000
NXP Semiconductors Product specification
Triacs MAC223 series
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
91˚C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
0 5 10 15 20 25 30
0
10
20
30
40
= 180
120
90
60
30
IT(RMS) / A
Ptot / W Tmb(max) / C
125
115
105
95
85
1
-50 0 50 100 150
0
5
10
15
20
25
30 BTA140
91 C
Tmb / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms
10
100
1000
T / s
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
T2- G+ quadrant
0.01 0.1 1 10
0
10
20
30
40
50
surge duration / s
IT(RMS) / A
1 10 100 1000
0
50
100
150
200
Number of cycles at 50Hz
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
July 2001 5 Rev 1.000
NXP Semiconductors Product specification
Triacs MAC223 series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
T
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
-50 0 50 100 150
0
1
2
3
4
5
Tj / C
T2+ G+
T2+ G-
T2- G-
T2- G+
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2 2.5 3
0
10
20
30
40
50
60
70
80 BTA140
VT / V
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.073 V
Rs = 0.015 ohms
typ max
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10 BTA140
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp
P
t
D
bidirectional
unidirectional
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25C)
0 50 100 150
1
10
100
1000
9.015
Tj / C
12
dV/dt (V/us)
7.0
dIcom/dt =
25 A/ms 20
off-state dV/dt limit
July 2001 6 Rev 1.000
NXP Semiconductors Product specification
Triacs MAC223 series
Dimensions in mm
Net Mass: 2 g
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
123
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
NXP Semiconductors
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