DISCRETE SEMICONDUCTORS DATA SHEET MAC223 series Triacs Product specification July 2001 NXP Semiconductors Product specification Triacs MAC223 series GENERAL DESCRIPTION Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. PINNING - TO220AB PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate tab QUICK REFERENCE DATA SYMBOL PARAMETER MAX MAX. UNIT MAC223 VDRM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current IT(RMS) ITSM PIN CONFIGURATION A6 A8 400 600 V 25 230 25 230 A A SYMBOL tab T2 T1 G 1 23 main terminal 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAC223 VDRM Repetitive peak off-state voltages IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature full sine wave; Tmb 91 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ over any 20 ms period MAX. UNIT A6 A8 4001 6001 V - 25 A - 190 230 180 A A A2s -40 - 50 50 50 10 2 5 5 0.5 150 125 A/s A/s A/s A/s A V W W C C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. July 2001 2 Rev 1.000 NXP Semiconductors Product specification Triacs MAC223 series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient Rth j-a CONDITIONS MIN. TYP. MAX. UNIT - 60 1.0 1.4 - K/W K/W K/W MIN. TYP. MAX. UNIT T2+ G+ T2+ GT2- GT2- G+ - 6 10 11 23 50 50 50 75 mA mA mA mA T2+ G+ T2+ GT2- GT2- G+ - 8 30 18 15 40 60 40 60 mA mA mA mA IT = 30 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C 0.25 - 7 12 1.3 0.7 0.4 0.1 30 30 1.55 1.5 0.5 mA mA V V V mA STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT Gate trigger current VD = 12 V; IT = 0.1 A IL Latching current IH Holding current VT VGT On-state voltage Gate trigger voltage ID Off-state leakage current VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A T2+ T2- DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 C; IT(RMS) = 25 A; dIcom/dt = 9 A/ms; gate open circuit ITM = 30 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s 100 300 - V/s - 10 - V/s - 2 - s dVcom/dt tgt July 2001 3 Rev 1.000 NXP Semiconductors Product specification Triacs 40 MAC223 series Tmb(max) / C Ptot / W 85 30 = 180 30 IT(RMS) / A BTA140 91 C 25 95 1 120 90 20 60 20 105 30 15 10 115 10 5 0 0 5 10 15 IT(RMS) / A 20 125 30 25 0 -50 50 Tmb / C 100 150 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle. 1000 0 ITSM / A 50 IT(RMS) / A 40 30 100 dI T /dt limit 20 I TSM IT T2- G+ quadrant T 10 time Tj initial = 25 C max 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms. 200 1.6 ITSM T 150 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 91C. ITSM / A IT 0.1 1 surge duration / s VGT(Tj) VGT(25 C) 1.4 time Tj initial = 25 C max 1.2 100 1 0.8 50 0.6 0 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. July 2001 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. 4 Rev 1.000 NXP Semiconductors Product specification Triacs 5 MAC223 series IGT(Tj) IGT(25 C) T2+ G+ T2+ GT2- GT2- G+ 4 BTA140 IT / A 80 Tj = 125 C Tj = 25 C 70 typ 60 Vo = 1.073 V max Rs = 0.015 ohms 50 3 40 2 30 20 1 10 0 -50 0 50 Tj / C 100 0 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. 3 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. IL(Tj) IL(25 C) 10 2.5 BTA140 Zth j-mb (K/W) 1 unidirectional bidirectional 2 0.1 1.5 P D 1 t p 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. 3 0.1ms IH(Tj) IH(25C) 1000 dV/dt (V/us) off-state dV/dt limit 2.5 100 2 1.5 dIcom/dt = 25 A/ms 10 1 20 15 12 9.0 7.0 0.5 0 -50 0 50 Tj / C 100 1 150 50 100 150 Tj / C Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt. Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. July 2001 0 5 Rev 1.000 NXP Semiconductors Product specification Triacs MAC223 series Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 2001 6 Rev 1.000 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. 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