1N6623USJANTXV - MICROSEMI - Datasheet.Directory

VOIDLESS-HERMETICALLYSEALED

SURFACE MOUNT ULTRA FAST

VERY

TIFIER

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SCOTTSDALE DIVISION

1N6620US thru 1N6625US

1N6620US – 1N6625US

DESCRIPTION APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/585 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working

peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-

glass construction using an internal “Category I” metallurgical bond. These devices

are also available in axial-leaded packages for thru-hole mounting (see separate

data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier

products to meet higher and lower current ratings with various recovery time speed

requirements including standard, fast and ultrafast device types in both through-hole

and surface mount packages.

Package “A”

or D-5A

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES APPLIC ATIONS / BENE FITS

• Surface mount series equivalent to the JEDEC

registered 1N6620 to 1N6625 series

• Voidless hermetically sealed glass package

• Extremely robust construction

• Triple-layer passivation

• Internal “Category I” Metallurgical bonds

• JAN, JANTX, and JANTXV available per MIL-PRF-

19500/585

• Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “SP” prefix, e.g.

SP6620US, SP6624US, etc.

• Axial-leaded equivalents also available (see separate

data sheet for 1N6620 thru 1N6625)

• Ultrafast recovery rectifier series 200 to 1000 V

• Military and other high-reliability applications

• Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

• High forward surge current capability

• Low thermal resistance

• Controlled avalanche with peak reverse power

capability

• Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RAT ING S MECHANICAL AND PACKAGING

• Junction Temperature: -65oC to +150oC

• Storage Temperature: -65oC to +175oC

• Peak Forward Surge Current @ 25oC: 20 Amps (except

1N6625 which is 15 Amps)

Note: Test pulse = 8.3 ms, half-sine wave.

• Average Rectified Forward Current (IO) at TEC=+110oC:

1N6620 thru 1N6622: 2.0 Amps

1N6623 thru 1N6625: 1.5 Amps

(Derate linearly at 1.5%/oC for TEC > +110oC)

• Average Rectified Forward Current (IO) at TA=25oC:

1N6620 thru 1N6622: 1.2 Amps

1N6623 thru 1N6625: 1.0 Amp

(Derate linearly at 0.67%/ oC for TA>+25oC. This IO

rating is typical for PC boards where thermal resistance

from mounting point to ambient is sufficiently controlled

where TJ(max) is not exceeded.)

• Thermal Resistance junction to endcap (RθJEC): 13oC/W

• Capacitance at VR= 10 V: 10 pF

• Solder temperature: 260oC for 10 s (maximum)

• CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

• TERMINATIONS: End caps are Copper with

Tin/Lead (Sn/Pb) finish. Note: Previous inventory

had solid Silver end caps with Tin/Lead plating.

• MARKING: Cathode band only

• POLARITY: Cathode indicated by band

• Tape & Reel option: Standard per EIA-481-B

• Weight: 193 mg

• See package dimensions and recommended pad

layout on last page

Microsemi

Scottsdale Division

Page 1

10-06-2009 REV E; SD52A.pdf

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

VOIDLESS-HERMETICALLYSEALED

SURFACE MOUNT ULTRA FAST

VERY

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SCOTTSDALE DIVISION

1N6620US thru 1N6625US

1N6620US – 1N6625US

ELECTRICAL CHARACTERISTICS @ 25oC MAXIMUM

REVERSE

CURRENT IR @

VRWM

TYPE

NUMBER MINIMUM

BREAK-

DOWN

VOLTAGE

IR = 50μA

MAXIMUM

FORWARD

VOLTAGE

VF @ IF

WORKING

PEAK

REVERSE

VOLTAGE

VRWM

TA=25oC TA=150oC

MAXIMUM

REVERSE

RECOVERY

TIME (LOW

CURRENT)

trr

Note 1

MAXIMUM

REVERSE

RECOVERY

TIME (HIGH

CURRENT)

trr

Note 2

PEAK

RECOVERY

CURRENT

IRM (rec)

IF = 2A,

100A/μs

Note 2

FORWARD

RECOVERY

VOLTAGE

VFRM Max

IF = 0.5A

tfr =12ns

V V @ A V @ A V

μA μA ns ns A V

1N6620 220 1.40V @ 1.2A 1.60V @ 2.0A 200 0.5 150 30 45 3.5 12

1N6621 440 1.40V @ 1.2A 1.60V @ 2.0A 400 0.5 150 30 45 3.5 12

1N6622 660 1.40V @ 1.2A 1.60V @ 2.0A 600 0.5 150 30 45 3.5 12

1N6623 880 1.55V @ 1.0A 1.80V @ 1.5A 800 0.5 150 50 60 4.2 18

1N6624 990 1.55V @ 1.0A 1.80V @ 1.5A 900 0.5 150 50 60 4.2 18

1N6625 1100 1.75V @ 1.0A 1.95V @ 1.5A 1000 1.0 200 60 80 5.0 30

NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750,

Method 4031, Condition B.

NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, di/dt=100 A/μs MIL-STD-750, Method 4031,

Condition D.

SYMBOLS & DEFINITI ONS

Symbol Definition

VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.

VRWM Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating

temperature range.

VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.

IR Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and

temperature.

C Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in

picofarads.

trr

Reverse Recovery Time: The time interval between the instant the current passes through zero when

changing from the forward direction to the reverse direction and a specified recovery decay point after a peak

reverse current is reached.

CHARTS AND GRAPHS

FIGURE 1 FIGURE 2

Typical Forward Current Typical Forward Current

vs vs

Forward Voltage Forward Voltage

Microsemi

Scottsdale Division

Page 2

10-06-2009 REV E; SD52A.pdf

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

VOIDLESS-HERMETICALLYSEALED

SURFACE MOUNT ULTRA FAST

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SCOTTSDALE DIVISION

1N6620US thru 1N6625US

1N6620US – 1N6625US

IFSM - Forward Pulse Current – (A)

PR – Reverse Pulse Power – (W)

FIGURE 3 FIGURE 4

Typical Reverse Current vs. Typical Reverse Current vs.

Applied Reverse Voltage Applied Reverse Voltage

IFSM - Forward Pulse Current – (A)

PR – Reverse Pulse Power – (W)

Pulse Duration Pulse Duration

FIGURE 5 FIGURE 6

Forward Pulse Current vs. Reverse Pulse Power vs.

Pulse Duration Pulse Duration

Microsemi

Scottsdale Division

Page 3

10-06-2009 REV E; SD52A.pdf

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

VOIDLESS-HERMETICALLYSEALED

SURFACE MOUNT ULTRA FAST

VERY

TIFIER

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Page 4

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N6620US thru 1N6625US

1N6620US – 1N6625US

PACKAGE DIMENSIONS

NOTE: This Package Outline has also previously PAD LAYOUT

been identified as “D-5A” INCHES mm

A 0.246 6.25

B 0.067 1.70

C 0.105 2.67

Note: If mounting requires adhesive

separate from the solder, an additional

0.060 inch diameter contact may be

placed in the center between the pads

as an optional spot for cement.

INCHES mm

MIN MAX MIN MAX

BD .097 .103 2.46 2.62

BL .185 .200 4.70 5.08

ECT .019 .028 0.48 0.71

S .003 --- 0.08 ---

10-06-2009 REV E; SD52A.pdf