TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
Qualified per M I L-PR F-19500/24 6
• Glass Passivated Die • Glass to Metal Header Construction
• VRRM to 1000V • 1600 Amps Surge Rating
T4-LDS-0142 Rev. 1 (091785) Page 1 of 3
DEVICES LEVELS
1N3289 1N3294 1N3289R 1N3294R JAN
1N3291 1N3295 1N3291R 1N3295R JANTX
1N3293 1N3293R JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Peak Repetitive Reverse Voltage
1N3289
1N3291
1N3293
1N3294
1N3295
1N3289R
1N3291R
1N3293R
1N3294R
1N3295R
VRWM
200
400
600
800
1000
V
Average Forward Current, TC = 134° IF 100 A
Peak Surge Forward Current @ tp = 8.3ms, half sinewave,
TC = 150°C IFSM 1600 A
Thermal Resistance, Junction to Case RθJC 0.4 °C/W
Operating Case Temperature Range Tj -65°C to 200°C °C
Storage Temperature Range TSTG -65°C to 200°C °C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unle ss othe rwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Voltage
IFM = 310A, TC = 25°C * VFM 1.55 V
Reverse Current
VRM = 200, TC = 25°C
VRM = 400, TC = 25°C
VRM = 600, TC = 25°C
VRM = 800, TC = 25°C
VRM = 1000, TC= 25°C
1N3289
1N3291
1N3293
1N3294
1N3295
1N3289R
1N3291R
1N3293R
1N3294R
1N3295R
IRM 10 mA
Reverse Current
VRM = 200, TC = 200°C
VRM = 400, TC = 200°C
VRM = 600, TC = 200°C
VRM = 800, TC = 200°C
VRM = 1000, TC = 200°C
1N3289
1N3291
1N3293
1N3294
1N3295
1N3289R
1N3291R
1N3293R
1N3294R
1N3295R
IRM 30 mA
* Pulse test: Pulse width 300μsec. Duty cycle 2%
Note:
DO-205AA (DO-8)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
T4-LDS-0142 Rev. 1 (091785) Page 2 of 3
GRAPHS
FIGURE 3
FORWARD CURRENT DERATING
FIGURE 1
TYPICAL FORWARD CHARACTERISTICS
FIGURE 5
TRANSIENT THERMAL IMPEDANCE
FIGURE 2
TYPICAL REVERSE CHARACTERISTICS
FIGURE 7
MAXIMUM NONREPETITIVE SURGE CURRENT
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
T4-LDS-0142 Rev. 1 (091785) Page 3 of 3
PACKAGE DIMENSIONS
Dimensions
Symbol Inches Millimeters Notes
Min Max Min Max
CD .625 1.000 15.88 25.40 8
CD1 .500 12.70
CH 1.750 44.45
CH1 1.140 28.96
c .050 .120 1.27 3.05
FL .300 .450 7.62 11.43 6
FW .670 17.02
HF 1.031 1.063 26.19 27.00
HT .125 .500 3.18 12.70 5
OAL 4.300 5.065 109.22 128.65
SD 4
SL .605 .645 15.37 16.38
UD .343 .373 8.71 9.47
φt .250 .310 6.35 7.87 4
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information
only.
3. Complete threads to extend to within 2.5 threads of
seating plane.
4. 375-24 UN F- 2 A. Maxi mum pitch diameter of plated
threads shall be basic pitch diameter (.3479 inch (8.837
mm) reference.
5. A chamfer or undercut on one or both ends of hexagonal
portions is optional.
6. Minimum flat.
7. For marking (see 3.5).
8. The body of the device, with the exception of the hexagon
and flexible lead extensions, lies within cyclinder defined
by CD1 and CH, CD1 not to exceed actual HF.
9. Terminal shape is optional.
10. In accordance with ASME Y14.5M, diameters are
equivalent to φx symbology.
Physical dimensions
