fiAMOSPEC HIGH-POWER NPN SILICON POWER TRANSISTORS ... designed for use in general-purpose amplifier and switching application . FEATURES: * Recommend for 125W High Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SA1215 MAXIMUM RATINGS NPN 2802921 15 AMPERE POWER TRANASISTOR 160 VOLTS 150 WATTS TO-247(3P) Pr? Characteristic Symbol 2802921 Unit Collector-Emitter Voltage Veeo 160 Vv Collector-Base Voltage Vogo 160 Vv Emitter-Base Voitage Vero 5.0 Vv Collector Current - Continuous le 15 A - Peak lon 20 Base current lp 4.0 A Total Power Dissipation @T, = 25C Pp 150 Ww Derate above 25C 1.2 wirc Operating and Storage Junction Ty .Tst c Temperature Range -55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case| Rjc 0.83 C c M oo I PIN 1.BASE FIGURE -1 POWER DERATING Te , TEMPERATURE C) 150 2 125 Ke Eco J e NN a 75 NX B so N x f N 9 2 9% 25 50 7 100 125. 150 2.COLLECTOR 3.EMNTER MILLIMETERS DIM MIN MAX A 20.63 | 2238 B 15.38 | 16.20 Cc 1.90 2.70 D 5.10 6.10 E 14.81 15.22 F 11.72 | 12.84 G 4.20 450 H 1.82 2.46 | 2.92 3.23 J 0.89 153 K 5.26 5.66 L 18.50 | 21.50 M 4.68 5.36 N 2.40 2.80 0 3.25 3.65 P 0.55 0.702SC2921 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Visryceo Vv (l_= 25 mA, I,= 0 ) 160 Collector Cutoff Current lepo uA (Vop= 160 V, I= 0) 100 Emitter Cutoff Current leo uA ( Veg= 5.0 V, Ig= 0) 100 ON CHARACTERISTICS (1) DC Current Gain (l,= 5.0 A,Vep= 4.0 V) hFE 50 Collector-Emitter Saturation Voltage VeceE;sat) Vv (1,= 5.0 A, I,= 500 mA ) 2.0 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product f; MHz (lg = 2.0A, Veg = 12 V, f = 1.0 MHz ) 10 SWITCHING CHARATERISTICS Turn-on Time Voec= 60 V,I,= 5.0A ton 0.25(typ) us Storage Time ee iB nee mA t. 1.95(typ) us Fall Time ty 0.30(typ) us (1) Pulse Test: Pulse Width =300 us,Duty Cycle = 2.0%2SC2921 NPN a ACTIVE-REGION SAFE OPERATING AREA (SOA) o o > Qo SINGLE NONREPETITIVE PULSE To=25C CURVES MUST BE DERA LINEARLY WITH INCREASE IN TEMPERATURE Ic, COLLECTOR CURRENT (Amp.) 0.1 2.0 3.0 50 7.0 10 20 (30 50 70 100 200 Vce , COLLECTOR EMITTER (VOLTS) VCE(sat) - lp N o = Oo Vcr , COLLECTOR EMITTER VOLTAGE (VOLTS) 0 02 04 06 08 1.0 ls, BASE CURRENT (A) fr - Ic COMMON EMITTER To=28C Vee=12V fr, TRANSITION FREQUENCY (MHz) 0 0.02 0.03 0.05 0.1 02 03 05 1.0 2.0 3.0 50 10 Ic, COLLECTOR CURRENT (A) fc , COLLECTOR CURRENT (A) hre , OC CURRENT GAIN There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typq=150 C; is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided Typigs150C,At high case temperatures, thermal limita - tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Ic - Vee 0 0.5 1 15 2 25 3 3.5 4 Vee , COLLECTOR-EMITTER VOLTAGE (V) DC CURRENT GAIN 0203 05 1.0 20 3.0 50 10 20 Ie , COLLECTOR CURRENT (AMP) 0.03 0.05 0.1