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123
PIN 2
PIN 1
NC
PIN 3
High Temperature Silicon Carbide
Power Schottky Diode
Features Package
650 V Schottky rectifier
210 °C maximum operating temperature
Electrically isolated base-plate
Zero reverse recovery charge
Superior surge current capability
Positive temperature coefficient of VF
Temperature independent switching behavior
Lowest figure of merit QC/IF
Available screened to Mil-PRF-19500
RoHS Compliant
TO
–
257 (Isolated Base-plate Hermetic Package)
Advantages Applications
High temperature operation
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Industry’s lowest reverse recovery charge
Industry’s lowest device capacitance
Ideal for output switching of power supplies
Best in class reverse leakage current at operating temperature
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
Repetitive peak reverse voltage VRRM 650 V
Continuous forward current IF TC= 25 °C 2.5 A
Continuous forward current IF TC≤ 190 °C 0.75 A
RMS forward current IF
(
RMS
)
TC≤ 190 °C 1.3 A
Surge non-repetitive forward current, Half Sine
Wave IF,SM TC = 25 °C, tP = 10 ms 10 A
Non-repetitive peak forward current IF,max TC= 25 °C, tP = 10 µs 65 A
I2t value ∫i2dt TC= 25 °C, tP = 10 ms 0.5 A2S
Power dissipation Ptot TC= 25 °C 24 W
Operating and storage temperature Tj , Tstg -55 to 210 °C
Electrical Characteristics at Tj = 210 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Diode forward voltage VF IF = 0.75 A, Tj = 25 °C 1.4 V
IF = 0.75 A, Tj = 210 °C 2.3
Reverse current IR VR= 650 V, Tj = 25 °C 1 5 µA
VR= 650 V, Tj = 210 °C 5 50
Total capacitive charge QC IF ≤ IF,MAX
dIF/dt = 200 A/μs
T
j
= 210 °C
VR = 400 V 7 nC
Switching time ts VR = 400 V < 17 ns
Total capacitance C
VR= 1 V, f = 1 MHz, Tj = 25 °C 76
pF
VR= 400 V, f = 1 MHz, Tj = 25 °C 12
VR= 650 V, f = 1 MHz, Tj = 25 °C 12
Thermal Characteristics
Thermal resistance, junction - case RthJC 9.52 °C/W
Mechanical Properties
Mounting torque M 0.6 Nm
VRRM = 650 V
IF = 2.5 A
QC = 7 nC
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Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics
Figure 3: Power Derating Curve Figure 4: Current Derating Curves (D = tP/T, tP= 400 µs)
(Considering worst case Zth conditions )
Figure 5: Typical Junction Capacitance vs Reverse Voltage Figure 6: Typical Capacitive Energy vs Reverse Voltage
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Characteristics Characteristics
Figure 7: Current vs Pulse Duration Curves at TC = 190 °C Figure 8: Transient Thermal Impedance
Package Dimensions:
TO-257 PACKAGE OUTLINE
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
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Revision History
Date Revision Comments Supersedes
2014/08/26 1 Updated Electrical Characteristics
2012/04/24 0 Initial release
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
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SPICE Model Parameters
This is a secure document. Copy this code from the SPICE model PDF file on our website into a SPICE
software program for simulation of the 1N8030-GA.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 1.0 $
* $Date: 05-SEP-2013 $
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
*
* COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of 1N8030-GA SPICE Model
*
.SUBCKT 1N8030 ANODE KATHODE
D1 ANODE KATHODE 1N8030_25C; Call the Schottky Diode Model
D2 ANODE KATHODE 1N8030_PIN; Call the PiN Diode Model
.MODEL 1N8030_25C D
+ IS 3.57E-18 RS 0.49751
+ TRS1 0.0057 TRS2 2.40E-05
+ N 1 IKF 322
+ EG 1.2 XTI 3
+ CJO 9.12E-11 VJ 0.371817384
+ M 1.527759838 FC 0.5
+ TT 1.00E-10 BV 650
+ IBV 1.00E-03 VPK 650
+ IAVE 1 TYPE SiC_Schottky
+ MFG GeneSiC_Semiconductor
.MODEL 1N8030_PIN D
+ IS 5.73E-11 RS 0.72994
+ N 5 IKF 800
+ EG 3.23 XTI -14
+ FC 0.5 TT 0
+ BV 650 IBV 1.00E-03
+ VPK 650 IAVE 1
+ TYPE SiC_PiN
.ENDS
*
* End of 1N8030-GA SPICE Model
