1
Toshiba new Products Information
Power Devices
～January, 2013 ～
－ Contents －
High Voltage MOSFET （New Product series） ・・・P2 ～
Low Voltage MOSFET （New Product series） ・・・P6 ～
MOSFET for automotive （New Product series） ・・・P12 ～
D-IGBT （New Product series） ・・・P16 ～
Bipolar Junction Transistor （New Product series） ・・・P18 ～
Small and Medium Diodes ・・・P19 ～
DC-DC Converter IC （New Product series） ・・・P20 ～
HV-IPD （New Product series） ・・・P27 ～
LV-IPD （New Product series） ・・・P30 ～
New Product Line up ・・・P32 ～
Toshiba Corporation
Semiconductor & Storage products Company
Toshiba Discrete Semiconductor Technology Corporation
2
High Voltage MOSFET （New Product series ）1
Next Generation Super Junction MOSFET DTMOS Ⅳ
Series DTMOS I
2007 DTMOS II
2008 DTMOS III
2011 DTMOSⅣ
2012 DTMOS III,IV
development concept
Part
Number TK20A60T TK20A60U TK18A60V TK16A60”W”
“V”= DTMOSIII series
“W”= DTMOSⅣseries
Spec 600V/20A
0.19Ωmax 600V/20A
0.19Ωmax 600V/18A
0.19Ωmax 600V/15.8A
0.19Ωmax Line up with Ｌｏｗｅｒ
RDS(ON)
Ron x A
25mΩ･cm222.5mΩ･cm220mΩ･cm214mΩ･cm2DT3 improved 12%,
DT4 target as 30%
improved more compared
with current gen.
Qg (typ) 30nC 27nC 39nC 38nC Optimized Qg characteristics
for lower EMI noise
(improvement controllability)
Ron x Qg
(typ) 5.0Ω･nC
(=0.165 x 30) 4.5Ω･nC
(=0.165 x 27) 6.4Ω･nC
(=0.165 x 39)6.3Ω･nC
(=0.165 x 38)
New
We will consider the additional line up (other voltage, with HSD etc... ) due to the market inquiry.
Improvement by Fine patterning and Optimized Vertical profile
Optimization Gate layout and structure
TOSHIBA SJMOS’s(DTMOS) Trend
RonA (mWcm2)
10
0
20
30
40
‘03‘99 ‘07 ‘11
50
60 STM MDmesh
Fairchild
SuperFET
MDmeshII
Infineon
Cool-S5
Cool-CP
Cool-C3
‘09‘05‘01
MDmeshV
Cool-C6
‘13
New Generations
DTMOSⅣ
(Single EPI process)
DTMOSⅠ
DTMOSⅡ
DTMOSⅢ
【Ron*A Improvement】
In the same die size
RDSon can be reduced “30%”
In the same RDSon
Die size can reduce 30%.
DT3
Size=100
RDSon=100
DT4
Size=100
RDSon= 70
DT4
Size= 70
RDSon=100
Size: Chip Size
RDSon: On resistance
1.SingleEPI(SE)Process
Multi EPI
Single EPI
Target for future Gen.
DTMOSⅤ
DTMOS supporting higher efficiency & compact design
for high power converter, by Lowest Ron*A and
combination with variable packages.
DT Ⅲ
DT Ⅳ
DT Ⅳ
3
High Voltage MOSFET （New Product series ）2
DTMOSⅣ(VDS=600V) Products Line up Idea (Schedule as CY)
DTMOSⅣ(VDS=650V) Products Line up Idea
(Schedule as CY)
Toshiba has developed the Gen-4 super-junction 600-V DTMOSIV MOSFET series. Fabricated using the state-of-the-art single epitaxial
process, DTMOSIV provides a 30% reduction in Ron･A, a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. A
reduction in Ron･A makes it possible to house lower Ron chips in the same packages. This helps to improve the efficiency and reduce the
size of power supplies.
The following table shows the development plan of the Gen-4 super-junction 650-V DTMOSIV MOSFET series.
Note: Specification and MP
schedule of products under
development are subject to
change.
Current
rating
(A)
R DS(ON)
max.
(Ω)
DPAK
(TO-252) IPAK
(TO-253) I2PAK
(TO-262) D2PAK
(TO-263) 8x8mm
DFN TO-220 TO-
220SIS TO-3P(N) TO-247 TO-3P(L)
Qg
(nC) Ciss
(pF)
5.4 0.9 TK5P60W
ES: OK
MP: Jan.13
TK5Q60W
ES: OK
MP: Feb.13
TK5A60W
ES: OK
MP: Jan.13
10.5 380
6.2 0.75-
0.82
TK6P60W
(0.82Ω)
ES: OK
MP: Feb.13
TK6Q60W
(0.82Ω)
ES: OK
MP: Feb.13
TK6A60W
ES: OK
MP: Feb.13
12 390
7 0.6 TK7P60W
ES: OK
MP: Jan.13
TK7Q60W
ES: OK
MP: Feb.13
TK7A60W
ES: Dec.12
MP: Jan.13
13 490
8 0.5 TK8P60W
ES: OK
MP: Feb.13
TK8Q60W
ES: OK
MP: Feb.13
TK8A60W
ES: OK
MP: Feb.13
16 530
9.8 0.38-
0.43
TK10P60W
(0.43Ω)
ES: OK
MP: Dec.13
TK10Q60W
(0.43Ω)
ES: OK
MP: Feb.13
TK10V60W
ES: OK
TK10E60W
ES: OK
MP: Jan.13
TK10A60W
ES: OK
MP: OK 20 700
11.5 0.3-0.34 TK12P60W
(0.34Ω)
ES: OK
MP: Feb.13
TK12Q60W
(0.34Ω)
ES: OK
MP: Feb.13
TK12V60W
ES: OK
TK12E60W
ES: OK
MP: Feb.13
TK12A60W
ES: OK
MP: OK
TK12J60W
ES: OK
MP:Feb.13 25 890
15.8 0.19
TK16C60W
ES: OK
MP: 2Q.13
TK16G60W
ES: OK
MP: Feb.13
TK16V60W
ES: OK
TK16E60W
ES: OK
MP: Jan.13
TK16A60W
ES: OK
MP: OK
TK16J60W
ES: OK
MP:Jan.13
TK16N60W
ES: OK
MP:Feb.13 38 1350
(20) 0.16 TK20C60W
ES: Feb.13
MP: 2Q.13
TK20G60W
ES: OK
MP: Feb.13
TK20V60W
ES: OK
TK20E60W
ES: OK
MP:Feb.13
TK20A60W
ES: Jan.13
MP:Feb.13
TK20J60W
ES: Jan.13
MP: Feb.13
TK20N60W
ES: OK
MP: Feb.13
50 1700
30.8 0.088
TK31V60W
ES: OK
TK31E60W
ES: OK
MP:Jan.13
TK31A60W
ES:OK
MP:Jan.13
TK31J60W
ES:OK
MP: OK
TK31N60W
ES:OK
MP:Feb.13 86 3000
38.8 0.065 Under
investigation
TK39A60W
ES:OK
MP:Feb.13
TK39J60W
ES: OK
MP:OK
TK39N60W
ES: OK
MP:Feb.13 110 4100
61.8 0.038 TK62J60W
ES:OK
MP:Jan.13
TK62N60W
ES:OK
MP:Feb.12
180 6500
100 0.018 TK100L60W
ES: OK
MP:Feb.13 360 15000
RDSon reduction by
improved Ron*A
Current
rating
(A)
R DS(ON)
max.
(Ω)
D2PAK
(TO-263) I2PAK
(TO-253) TO-220 TO-220SIS TO-247
Qg
(nC) Ciss
(pF)
(11) (0.38) TK(11)A65W
ES:2Q.13 (25) (890)
(13.7) (0.25) TK(14)G65W
ES: 2Q.13 TK(14)C65W
ES: 2Q.13 TK(14)E65W
ES: 2Q.13
TK(14)A65W
ES: OK
MP: Mar.13
TK(14)N65W
ES: 2Q.13 (38) (1350)
(17.3) (0.2) TK(17)C65W
ES: 2Q.13 TK(17)E65W
ES: 2Q.13 TK(17)A65W
ES: 2Q.13 TK(17)N65W
ES: 2Q.13 (50) (1700)
(27.6) (0.115) TK(28)N65W
Under
planning (86) (3000)
(35) (0.085) TK(35)A60W
ES:2Q.13 TK(35)N65W
ES:2Q.13 (110) (4100)
(49) (0.05) TK(45)N65W
Under
planning (180) (6500)
4
DTMOSⅣ w/ fast diode(VDS=600V) Products Line up Idea
(Schedule as CY)
DTMOSⅣ w/ fast diode(VDS=650V) Products Line up Idea
(Schedule as CY)
CFD
650V 199mΩ
DTMOS4
Trial samples
600V190mΩ
trr=103ns trr=111ns
IDR:10A/div
VDSR:100V/div,
t:100ns/div
About trr characteristics of a body diode, Toshiba’s has slightly better performance than
Infineon’s CFD, when comparing products rated around 600V, 0.2 Ohm.
The following table shows the development plan of the Gen-4 super-junction 600-V DTMOSIV MOSFET with a fast body diode .
The following table shows the development plan of the Gen-4 super-junction 650-V DTMOSIV MOSFET with a fast body diode .
High Voltage MOSFET （New Product series ）3
Note: Specification and MP schedule of products under development are subject to change.
Current
rating
(A)
R DS(ON)
max.
(Ω)
DPAK
(TO-252) D2PAK
(TO-263) TO-220 TO-220SIS TO-3P(N) TO-247
Qg
(nC) Ciss
(pF) trr
(ns)
7 0.6 TK7P60W5
ES: 1Q.13
MP: 2Q.13
TK7A60W5
ES: 1Q.13
MP: 2Q.13
(13) (490) (50)
8 0.5 TK8P60W5
ES: 1Q.13
MP: 2Q.13
TK8A60W5
ES: 1Q.13
MP: 2Q.13
(16) (530) (60)
15.8 0.19 TK16G60W5
ES: 1Q.13
MP: 2Q.13
TK16E60W5
ES: 1Q.13
MP: 2Q.13
TK16A60W5
ES:OK
MP:OK
TK16J60W5
ES: 1Q.13
MP:2Q.13
TK16N60W5
ES: 1Q.13
MP:2Q.13 43 1350 100
30.8 0.088 TK31J60W5
ES:OK
MP:OK
TK31N60W5
ES:1Q.13
MP:2Q.13 105 3000 135
38.8 0.065 TK39J60W5
ES: OK
MP:OK
TK39N60W5
ES: 1Q.13
MP:2Q.13 135 4100 150
Current
rating
(A)
R DS(ON)
max.
(Ω)
D2-PAK
(TO-263) TO-220 TO-220SIS TO-247
Qg
(nC) Ciss
(pF)
(13.7) (0.25) TK(14)G65W5
ES: 2Q.13 TK(14)E65W5
ES: 2Q.13
TK(14)A65W5
ES: 1Q.13
MP: 2Q.13
TK(14)N65W5
ES: 2Q.13 (40) (1350)
(17.3) (0.2) TK(17)E65W5
Under
planning
TK(17)A65W5
Under
planning
TK(17)N65W5
Under
planning TBD TBD
(27.6) (0.115) TK(28)N65W5
Under
planning TBD TBD
(35) (0.085) TK(35)A60W5
ES: 2Q.13 TK(35)N65W5
ES: 2Q.13 TBD TBD
(49) (0.05) TK(49)N65W5
Under
planning TBD TBD
5
DTMOSⅢ (VDS=600V) Products Line up
(Schedule as CY)
High Voltage MOSFET （New Product series ）4
Note: Specification and MP schedule of products under development are subject to change.
Current
rating
(A)
R DS(ON)
max.
(Ω)
DPAK
(TO-252) IPAK
(TO-253) I2PAK
(TO-262) D2PAK
(TO-263) TO-220 TO-220 SIS TO-3P(N) TO-3P(L)
Qg
(nC) Ciss
(pF)
5.4 0.9 TK5P60V TK5Q60V TK5A60V 11 370
6.2 0.75 TK6P60V TK6Q60V TK6A60V 12 410
7 0.6 TK7P60V TK7Q60V TK7A60V 15 550
8 0.5 TK8P60V TK8Q60V TK8A60V 16 600
18 0.19 TK18C60V
ES; Available
MP; 2Q. 13
TK18G60V
ES; Available
MP; Feb. 13 TK18E60V TK18A60V TK18J60V 39 1600
22 0.15 TK22C60V
ES; Available
MP; 2Q. 13
TK22G60V
ES; Available
MP; Feb. 13 TK22A60V TK22J60V 50 2200
33 0.088 TK33A60V TK33J60V 75 3500
45 0.065 TK45J60V 110 4800
65 0.043 TK65L60V 170 7500
80 0.025 TK80L60V 280 12500
6
Latest U-MOSVIII-H Trench MOS Series
Low Voltage MOSFET （New Product Series）1
【Features】
（1）Fabricated with a Gen-8 trench MOS process designed for various power supply applications
（2）Provides significantly better trade-offs between on-resistance (Ron) and input capacitance
(Ciss), compared to the current Gen-4 trench MOS process
（3）Offers high avalanche ruggedness
（4）Makes it possible to reduce radiation noise, compared to predecessors
【Lineup】
Compared to U-MOSVII-H, the U-MOSVIII-H Series is available in wide-ranging VDSS and
RDS(ON) points. Thus, the U-MOSVIII-H Series meets the requirements of various applications.
【Performance】
The U-MOSVIII-H Series provides about the same efficiency as competitors' devices at
heavy loads and higher efficiency at light loads under the test conditions shown below*.
7
TO-220
SIS
TO-220
Product Lineup（1）： U-MOS Ⅷ-H TO-220 Series
Low Voltage MOSFET （New Product Series）2
Note: Specification and MP schedule of products under development are subject to change.
Typ. MAX Typ. MAX
TO-220 TK30E06N1 S1DX6 12.2 15 - - 1050 400 33 OK OK U-MOS VIII-H
TO-220SIS TK30A06N1 S1DX7 12.2 15 - - 1050 400 33 OK OK U-MOS VIII-H
TO-220 TK40E06N1 S1BX7 8.4 10.4 - - 1700 580 40 OK OK U-MOS VIII-H
TO-220SIS TK40A06N1 S1BX8 8.4 10.4 - - 1700 580 40 OK OK U-MOS VIII-H
TO-220 TK58E06N1 S1CL0 4.4 5.4 - - 3400 1120 45 OK OK U-MOS VIII-H
TO-220SIS TK58A06N1 S1CL1 4.4 5.4 - - 3400 1120 45 OK OK U-MOS VIII-H
TO-220 TK100E06N1 S1BX9 1.9 2.3 - - 10500 3500 50 OK OK U-MOS VIII-H
TO-220SIS TK100A06N1 S1BY0 2.2 2.7 - - 10500 3500 50 OK OK U-MOS VIII-H
TO-220 TK35E08N1 S1EC2 10 12.2 - - 1700 440 18 OK OK U-MOS VIII-H
TO-220SIS TK35A08N1 S1EC3 10 12.2 - - 1700 440 18 OK OK U-MOS VIII-H
TO-220 TK46E08N1 S1BY2 6.9 8.4 - - 2500 620 22 OK OK U-MOS VIII-H
TO-220SIS TK46A08N1 S1BY3 6.9 8.4 - - 2500 620 22 OK OK U-MOS VIII-H
TO-220 TK72E08N1 S3X98 3.6 4.3 - - 5500 1300 38 OK OK U-MOS VIII-H
TO-220SIS TK72A08N1 S1AJ5 3.7 4.5 - - 5500 1300 38 OK OK U-MOS VIII-H
TO-220 TK100E08N1 S1BW8 2.6 3.2 - - 9000 2100 52 OK OK U-MOS VIII-H
TO-220SIS TK100A08N1 S1BW9 2.6 3.2 - - 9000 2100 52 OK OK U-MOS VIII-H
TO-220 TK22E10N1 S1BY5 11.5 13.8 - - 1800 310 18 OK OK U-MOS VIII-H
TO-220SIS TK22A10N1 S1BY6 11.5 13.8 - - 1800 310 18 OK OK U-MOS VIII-H
TO-220 TK34E10N1 S3Y01 7.9 9.5 - - 2600 450 23 OK OK U-MOS VIII-H
TO-220SIS TK34A10N1 S1AJ3 7.9 9.5 - - 2600 450 23 OK OK U-MOS VIII-H
TO-220 TK40E10N1 S1CE4 6.8 8.2 - - 3000 520 29 OK OK U-MOS VIII-H
TO-220SIS TK40A10N1 S1CE5 6.8 8.2 - - 3000 520 29 OK OK U-MOS VIII-H
TO-220 TK65E10N1 S3X99 4 4.8 - - 5400 950 42 OK OK U-MOS VIII-H
TO-220SIS TK65A10N1 S1AG3 4 4.8 - - 5400 950 42 OK OK U-MOS VIII-H
TO-220 TK100E10N1 S1BY7 2.8 3.4 - - 8800 1500 63 OK OK U-MOS VIII-H
TO-220SIS TK100A10N1 S1BY8 3.1 3.8 - - 8800 1500 63 OK OK U-MOS VIII-H
TO-220 TK32E12N1 S1DM3 11 13.8 - - 2000 330 13 OK 2013/Mar U-MOS VIII-H
TO-220SIS TK32A12N1 S1DM4 11 13.8 - - 2000 330 13 OK 2013/Mar U-MOS VIII-H
TO-220 TK42E12N1 S1DY1 7.8 9.4 - - 3100 490 16 OK 2013/Mar U-MOS VIII-H
TO-220SIS TK42A12N1 S1DY2 7.8 9.4 - - 3100 490 16 OK 2013/Mar U-MOS VIII-H
TO-220 TK56E12N1 S1CE6 5.8 7 - - 4200 650 19 OK OK U-MOS VIII-H
TO-220SIS TK56A12N1 S1CE7 6.2 7.5 - - 4200 650 19 OK OK U-MOS VIII-H
TO-220 TK72E12N1 S1DM1 3.6 4.4 - - 8100 1200 30 OK 2012/Dec U-MOS VIII-H
TO-220SIS TK72A12N1 S1DM2 3.7 4.5 - - 8100 1200 30 OK 2012/Dec U-MOS VIII-H
MP(CY) Note
Crss
(Typ.)
(ｐF)
Ciss
(Typ.)
(ｐF)
Coss
(Typ.)
(ｐF) ES(CY)
120
60
80
Part No./Prototype No.
100
VGS＝10VPKG
RDS(ON) (mΩ)
VDSS
(V) VGS＝4.5V
8
3 x 3
5 x 6
D2PAK
TO-263
DPAK
TO-252
Product Lineup（2）： U-MOS Ⅷ-H & U-MOS Ⅵ-H SMD series
Low Voltage MOSFET （New Product Series）3
Note: Specification and MP schedule of products under development are subject to change.
Typ. MAX Typ. MAX
TPN11006NL S1FE7 9.6 11.4 12.8 17 23 1500 350 23 0.6 OK 2013/Feb U-MOS VIII-H
TPN22006NH S1DS6 18 22 - - 17 690 270 10 0.8 OK OK U-MOS VIII-H
TPN14006NH S1DS5 11.4 13.9 - - 18 910 320 16 2.2 OK 2012/Dec. U-MOS VIII-H
TPN7R506NH S1DL7 6 7.5 - - 28 1410 480 22 0.7 OK 2013/Jan U-MOS VIII-H
TPN30008NH S1DS9 25 30 - - 10 710 170 11 0.6 OK 2012/Dec. U-MOS VIII-H
TPN13008NH S1DL8 10.8 13.3 - - 20 1230 290 18 0.8 OK 2013/Jan U-MOS VIII-H
TPN3300ANH S1DT1 28 33 - - 8.8 680 130 11 0.6 OK OK U-MOS VIII-H
TPN1600ANH S1CA4 13 16 - - 18 1230 220 19 0.7 OK 2013/Jan U-MOS VIII-H
150
TBD S1CL7 57 68 - - 3.5 490 55 11 1 2013/3Q 2013/4Q U-MOS VIII-H
200
TBD S1CL8 101 121 - - 3.3 490 35 11 1 2013/3Q 2013/4Q U-MOS VIII-H
250
TBD S1CL9 186 223 - - 3.3 490 31 11 1 2013/3Q 2013/4Q U-MOS VIII-H
TPH14006NH S1CA2 11 14 - - 25 1000 310 16 2OK OK U-MOS VIII-H
TPH7R506NH S1CA1 6.1 7.5 - - 40 1785 575 31 1OK OK U-MOS VIII-H
TPH5R906NH S1BJ3 4.8 5.9 - - 50 2340 745 38 1OK OK U-MOS VIII-H
TPH4R606NH S1CA0 3.8 4.6 - - 60 3050 990 49 1OK OK U-MOS VIII-H
TPH2R306NH S1DS4 1.9 2.3 - - 55 4700 1500 72 1OK 2013/Jan U-MOS VIII-H
TPH12008NH S1DL6 10.1 12.3 - - 16 1490 330 22 1.1 OK OK U-MOS VIII-H
TPH8R008NH S1DL5 6.6 8 - - 23 2300 520 35 1OK OK U-MOS VIII-H
TPH4R008NH S1DL4 3.3 4 - - 32 4100 890 59 1.2 OK 2013/Jan U-MOS VIII-H
TPH1400ANH S1DM0 11.3 13.6 - - 15 1440 260 22 0.9 OK OK U-MOS VIII-H
TPH8R80ANH S1DL9 7.4 8.8 - - 21 2180 410 33 0.8 OK OK U-MOS VIII-H
TPH4R50ANH S1CA3 3.7 4.5 - - 31 4000 700 58 1OK 2013/Jan U-MOS VIII-H
TBD S1DT2 57 68 - - 3.5 490 55 11 1 2013/3Q 2013/4Q U-MOS VIII-H
TBD S1ER9 26 31 - - 4.3 1100 123 20 1 2013/2Q 2013/3Q U-MOS VIII-H
TBD S1AG4 16 18 - - 5.1 1860 210 31 1 2013/3Q 2013/4Q U-MOS VIII-H
TBD S1DT4 101 121 - - 3.3 490 35 11 1 2013/3Q 2013/4Q U-MOS VIII-H
TBD S1ER7 46 55 - - 3.8 1100 79 20 1 2013/3Q 2013/4Q U-MOS VIII-H
TBD S1AG5 26 32 - - 4.3 1860 140 31 1 2013/3Q 2013/4Q U-MOS VIII-H
TBD S1DT7 186 223 - - 3.3 490 31 11 1 2013/3Q 2013/4Q U-MOS VIII-H
TBD S1ER8 84 100 - - 3.8 1100 69 20 1 2013/2Q 2013/3Q U-MOS VIII-H
TBD S1AG6 48 58 - - 4.3 1860 120 31 1 2013/3Q 2013/4Q U-MOS VIII-H
40 22 33 26 40 35 640 TBD TBD 3.2 OK OK U-MOS VI-H
60 38 57 43 64 25 640 TBD TBD 3.2 OK OK U-MOS VI-H
80 53 80 58 87 17 640 TBD TBD 3.2 OK OK U-MOS VI-H
19 29 23 34 37 985 159 15 3.9 OK OK U-MOS VI-H
8.5 11 10.3 13.4 90 1920 310 29 -OK OK U-MOS VI-H
6.7 8.7 7.8 10.2 110 2600 420 38 -OK OK U-MOS VI-H
60 TK100G06N1 S1BY1 1.6 2 - -
50 10500 3500 140 3.0 OK 2013/Feb U-MOS VIII-H
80 TK100G08N1 S1BY4 2.3 2.8 - -
52 9000 2100 130 3.2 OK 2013/Feb U-MOS VIII-H
100 TK65G10N1 S1BJ2 3.8 4.5 - -
42 5400 950 81 2.4 OK 2013/Feb U-MOS VIII-H
100 TK100G10N1 S1BY9 2.6 3.1 - -
63 8800 1500 140 2.6 OK 2013/Feb U-MOS VIII-H
120 TK72G12N1 S1DX8 3.4 4 - -
30 8100 1200 130 2.4 OK 2013/Feb U-MOS VIII-H
200
80
60
Qg(10V)
(Typ.)
(nC)
Ciss
(Typ.)
(ｐF) Note
Coss
(Typ.)
(ｐF)
TSON Advance
100
MP(CY)ES(CY)PKG Part No./Prototype No.
VDSS
(V) VGS＝10V VGS＝4.5V
RDS(ON) (mΩ) Crss
(Typ.)
(ｐF)
rg
Typ.
(Ω)
TPC8229-H
SOP Advance
60
80
TPC8227-H
TPC8228-H
SOP-8
Dual
100
150
250
TO-220SM
DPAK TK20P04M1
TK40P04M1
TK50P04M1
40
9
Product Lineup（3）： High-speed 30V Series U-MOS Ⅷ-H & U-MOS Ⅶ-H
Low Voltage MOSFET （New Product Series）4
Note: Specification and MP schedule of products under development are subject to change.
10
Product Lineup（4）： Nch Low ON Resistance Series
Low Voltage MOSFET （New Product Series）5
Note: Specification and MP schedule of products under development are subject to change.
Typ. MAX Typ. MAX Typ. MAX
TPCF8003 20 ±12 - - 14 18 24 34 155 500 OK OK U-MOS IV
TPCF8004 30 ±20 19 24 24 30 --31 740 OK OK U-MOS VII
TPCF8002 30 ±20 16 21 24 32 - - 105 500 OK OK U-MOS IV
TPC6012 20 ±12 - - 15 20 25 38 150 630 OK OK U-MOS IV
TPC6011 30 ±20 16 20 24 32 - - 125 640 OK OK U-MOS IV
TPC6067 30 ±20 18 23 23 29 --34 610 OK OK U-MOSVII
TPCP8006 20 ±12 - - 6.5 10 9.5 13.7 330 1480 OK OK U-MOS IV
TPCP8004 30 ±20 7.0 8.5 10.5 14 -240 1270 OK OK U-MOS IV
TPCP8011 40 ±20 25.5 33.2 32** 41.6** - - 66 505 OK OK U-MOS IV
TPCP8010 40 ±20 19.1 24.8 24** 31.2** - - 75 600 OK OK U-MOS IV
TPCP8009 40 ±20 9.5 11.9 12.2** 19.5** - - 165 1250 OK OK U-MOS IV
TPCP8012 60 ±20 16.2 19.5 18.2** 23.7** - - 120 1160 OK OK U-MOS IV
TPCP8013 60 ±20 41.5 54.0 32** 41.6** - - 49 515 OK OK U-MOS IV
TPCP8206 20 ±12 - - 19 24 27 35 47 630 OK OK U-MOS VII
TPCP8205-H 30 ±20 20 26 22 29 --53 830 OK OK U-MOS VI-H
TPCP8207 40 ±20 29.1 37.8 39.3** 51** --66 505 OK OK U-MOS IV
TPCC8093 20 ±12 - - 4.5 5.8 6.8 9.5 140 1840 OK OK U-MOS VII
TPCC8007 20 ±12 - - 3.5 4.6 6.2 8.7 480 1870 OK OK U-MOS IV
TPCC8067-H 30 ±20 20 25 26 33 --28 690 OK OK U-MOS VII-H
TPCC8066-H 30 ±20 12.4 15 15 19 --49 1100 OK OK U-MOS VII-H
TPCC8068-H 30 ±20 9.3 11.6 12.0 16.0 - - 57 980 OK OK U-MOS VII-H
TPCC8008 30 ±25 4.5 6.8 8.5 13 - - 290 1600 OK OK U-MOS IV
TPCC8009# 30 ±20 5 7.0 7.2** 11** - - 230 1270 OK OK U-MOS IV
TPCC8074 30 ±20 4.9 6.3 6.5 8.5 - - 88 1800 OK OK U-MOS VII
TPCC8073 30 ±20 3.6 4.5 4.6 5.9 - - 130 2700 OK OK U-MOS VII
TPN6R303NC S1DP1 30 ±20 5.5 6.3 7.1 8.4 - - TBD TBD OK 2012/Dec U-MOS VIII
TPN4R203NC S1CA7 30 ±20 3.5 4.2 5.1 6.4 - - 110 1370 OK 2012/Dec U-MOS VIII
TPN2R503NC S1AD6 30 ±20 2.1 2.5 3.2 4.1 - - 160 2230 OK 2012/Dec U-MOS VIII
TBD S1FV0 30 ±20 TBD (2.0) TBD TBD - - TBD TBD 2013/Jan 2013/Apr U-MOS VIII
TPC8067-H 30 ±20 20 25 26 33 --28 690 OK OK U-MOS VII-H
TPC8066-H 30 ±20 12.6 16 15 19 --49 1100 OK OK U-MOS VII-H
TPC8065-H 30 ±20 9.6 11.6 11.9 14.7 - - 63 1350 OK OK U-MOS VII-H
TPC8092 30 ±20 7.6 9.0 9.2 11.1 - - 88 1800 OK OK U-MOS VII
TPC8074 30 ±20 5.1 6.5 6.7 8.7 - - 88 1800 OK OK U-MOS VII
TPC8073 30 ±20 3.8 4.7 4.8 6.1 - - 130 2700 OK OK U-MOS VII
TPC8082 30 ±20 3.1 4.0 4.0 5.0 - - 150 2900 OK OK U-MOS VII
TPC8081 30 ±20 2.5 3.2 3.2 4.0 - - 200 3600 OK OK U-MOS VII
TPC8080 30 ±20 2.2 2.8 2.8 3.4 - - 240 4300 OK OK U-MOS VII
TPC8088 30 ±20 1.9 2.4 2.4 2.9 - - 290 5200 OK OK U-MOS VII
TPC8087 30 ±20 1.7 2.1 2.1 2.5 - - 360 6400 OK. OK U-MOS VII
TPC8224-H 30 ±20 21 26 27 34 --24 670 OK OK U-MOS VII-H
TPC8223-H 30 ±20 17 21 19 23 --50 1100 OK OK U-MOS VII-H
TPCA8068-H 30 ±20 9.3 11.6 12.0 16.0 - - 57 980 OK OK U-MOS VII-H
TPCA8082 30 ±20 2.9 3.8 3.8 4.8 - - 150 2900 OK OK U-MOS VII
TPCA8081 30 ±20 2.3 3.0 3.0 3.8 - - 200 3600 OK OK U-MOS VII
TPCA8080 30 ±20 2.0 2.6 2.6 3.2 - - 240 4300 OK OK U-MOS VII
TPCA8088 30 ±20 1.7 2.2 2.2 2.7 - - 290 5200 OK OK U-MOS VII
TPCA8087 30 ±20 1.5 1.9 1.9 2.3 - - 360 6400 OK OK U-MOS VII
TBD S1AG1 30 ±20 TBD (4.5) TBD TBD - - TBD TBD OK 2013/Apr U-MOS VIII
TBD S1EH5 30 ±20 TBD (1.9) TBD TBD - - TBD TBD 2013/Jan 2013/Apr U-MOS VIII-H
Note
VGSS
(V)
SOP Adv Dual
PKG Part No./Prototype No.
SOP
Advance
SOP-8 Dual
SOP-8
TSON
Advance
PS-8 Dual
RDS(ON) (mΩ) VGS＝2.5VVGS＝10V
VS-8
VDSS
(V)
VS-6
PS-8
MP(CY)ES(CY)VGS＝4.5V Ciss
(Typ.)
(ｐF)
Crss
(Typ.)
(ｐF)
11
Product Lineup（5）： Pch Low ON Resistance Series
Product Lineup（6）： P／N Complimentary Series
Low Voltage MOSFET （New Product Series）6
Note: Specification and MP schedule of products under development are subject to change.
Typ. MAX Typ. MAX Typ. MAX
30 ±20 4 38 50 58 80 - - 45 190 U-MOS IV
-30 ±20 -4 38 50 58 80 - - 110 510 U-MOS V
30 ±20 6.5 20 26 22 29 - - 53 830 U-MOS VI-H
-30 ±20 -6 24 31.4 32 42 - - 190 1075 U-MOS VI
40 ±20 6 24 32 28 36 - - 40 850 U-MOS VI-H
-40 ±20 -5 33 43.2 41 53.4 - - 133 1105 U-MOS VI
30 ±20 9 14 17 17 21 - - 55 1190 U-MOS VII-H
-30 -25/+20 -7.4 18 23 23 29 - - 260 1650 U-MOS VI
40 ±20 6.1 24 32 28 36 - - 40 850 U-MOS VI-H
-40 -25/+20 -5.3 33 43.0 41 53.0 - - 135 1105 U-MOS VI
PKG Part No./Prototype No.
OK
SOP-8 Dual
TPC8407
TPC8408
PS-8 Dual
TPCP8404
TPCP8405
TPCP8406
VDSS
(V) VGSS
(V)
Crss
(Typ.)
(ｐF)
VGS＝-10V VGS＝-4.5V VGS＝-2.5V
RDS(ON) (mΩ)
ID
(A) NoteMP(CY)
OK
Ciss
(Typ.)
(ｐF)
OK OK
OK
OK
OK
OK
OK
OK
ES(CY)
Typ. MAX Typ. MAX Typ. MAX Typ. MAX Typ. MAX
TPCF8105 -20 ±12
--24 30 32 41 54 100 - - 160 1100 OK OK U-MOS VI
TPCF8108 -20 ±12
--21 26 29 37 45 95 - - 180 1320 OK OK U-MOS VI
TPCF8107 -30
-25/+20 22 28 29 38 ----- - 170 970 OK OK U-MOS VI
TPCF8305 -20 ±12 - -
47 58 65 83 125 265 - - 85 680 OK OK U-MOS IV
TPCF8306
-30 -25/+20 60 72 90 120 ----- - 65 390 OK OK U-MOS IV
TPC6130
-20 ±12 - - 86 106 128 164 - - - - 47 360 OK OK U-MOS VI
TPC6113
-20 ±12 - - 38 55 56 85 - - - - 93 690 OK OK U-MOS VI
TPC6111
-20 ±8 - - 33 40 44 57 56 80 76 150 100 700 OK OK U-MOS V
TPC6110
-30 -25/+20 43 56 59 77 ------85 510 OK OK U-MOS VI
TPCP8105
-20 ±12 - - 13.8 17 17.9 23 28 60 - - 296 2280 OK OK U-MOS VI
TPCP8106
-30 -25/+20 25 33 34 44 - - - - - - 150 870 OK OK U-MOS VI
TPCP8306
-20 ±12 - - 47 58 65 83 125 265 - - 85 680 OK OK U-MOS IV
TPCP8303
-20 ±8 - - 41 46 52 60 66 90 85 144 100 640 OK OK U-MOS V
TPCP8305
-20 ±12 - - 23 30 32 42 - - - - 215 1500 OK OK U-MOS VI
TPCC8136
-20 ±12 - - 13 16 17 22 26 60 - - 330 2350 OK OK U-MOS VI
TPCC8137
-20 ±12 - - 8 10 12 16 20 52 - - 400 2990 OK OK U-MOS VI
TPCC8138
-20 ±12 - - 6 7.5 8.1 11 13 42 - - 575 4165 OK OK U-MOS VI
TPCC8131
-30 -25/+20 13.5 17.6 17.6 23 - - - - - - 280 1700 OK OK U-MOS VI
TPCC8103
-30 ±20 9.4 12 17* 25* - - - - - - 340 1600 OK OK U-MOS V
TPCC8104
-30 -25/+20 6.8 8.8 9.5 12.4 - - - - - - 430 2260 OK OK U-MOS VI
TPCC8105
-30 -25/+20 6 7.8 8 10.4 - - - - - - 520 3240 OK OK U-MOS VI
TPCC8106
-40 -20/+10 9.5 12.3 11.8** 18.9** - - - - - - 320 3100 OK 2012/Dec U-MOS VI
TPCC8107
-60 -20/+10 23.5 30.5 26.8** 42.9** - - - - - - 230 2930 OK 2013/Jan U-MOS VI
TPC8129
-30 -25/+20 17 22 22 28 - - - - - - 260 1650 OK OK U-MOS VI
TPC8125
-30 -25/+20 10 13 13 17 - - - - - - 430 2580 OK OK U-MOS VI
TPC8126
-30 -25/+20 7.5 10 10.5 14 - - - - - - 400 2400 OK OK U-MOS VI
TPC8123
-30 -25/+20 7 9 9.5 12.5 - - - - - - 460 2940 OK OK U-MOS VI
TPC8127
-30 -25/+20 5.0 6.5 6.8 8.9 - - - - - - 620 3800 OK OK U-MOS VI
TPC8128
-30 -25/+20 3.9 5.0 5.3 6.9 - - - - - - 800 4800 OK OK U-MOS VI
TPC8120
-30 -25/+20 2.6 3.2 3.3 4.2 - - - - - - 1180 7420 OK OK U-MOS VI
TPC8134
-40 -25/+20 39 52 49 66 - - - - - - 100 890 OK OK U-MOS VI
TPC8132
-40 -25/+20 20 25 25 33 - - - - - - 190 1580 OK OK U-MOS VI
TPC8133
-40 -25/+20 11 15 13.5 18 - - - - - - 350 2900 OK OK U-MOS VI
TPC8124
-40 -25/+20 6.1 8.0 7.7 10 - - - - - - 540 4750 OK OK U-MOS VI
TPCA8131
-30 -25/+20 12.4 17.0 16.6 22 - - - - - - 280 1700 OK OK U-MOS VI
TPCA8109
-30 -25/+20 7.0 9.0 10 13 - - - - - - 400 2400 OK OK U-MOS VI
TPCA8128
-30 -25/+20 3.7 4.8 5.1 6.7 - - - - - - 800 4800 OK OK U-MOS VI
TPCA8120
-30 -25/+20 2.4 3.0 3.1 4 - - - - - - 1180 7420 OK OK U-MOS VI
TPCA8135
-60 -20/+10 96 125 101** 162** ------62 820 OK OK U-MOS VI
SOP
Advance
ES(CY)VGS＝-10V VGS＝-4.5V VGS＝-2.5V VGS＝-1.8V VGS＝-1.5V
RDS(ON) (mΩ)
SOP-8
VDSS
(V) VGSS
(V) MP(CY)PKG Ciss
(Typ.)
(ｐF)
TSON Advance
VS-6
PS-8
Dual
PS-8
Crss
(Typ.)
(ｐF)
VS-8 Dual
VS-8
NotePart No./Prototype No.
12
■Automotive MOSFET New Product Series 1
Polarity Product
Name
VDSS
(V)
ID(A) RDS(ON)
max(mΩ)
VDS=6V
RDS(ON)
max(mΩ)
VDS=10V
Ciss
typ(pF)
Crss
typ(pF)
Nch TPCC8069 S1CG2 40 30 14.1 8.1 1640 200
TPCC8070 S1CG3 60 30 21.3 13.5 1600 150
Pch TPCC8106 S1CG7 -40 -30 18.9 12.3 3100 320
TPCC8107 S1CG8 -60 -25 42.9 30.5 2930 230
Polarity Product
Name
ES
(CY)
CS
(CY)
MP
(CY)
Nch TPCC8069 S1CG2 OK OK OK
TPCC8070 S1CG3 OK OK OK
Pch TPCC8106 S1CG7 OK OK OK
TPCC8107 S1CG8 OK OK OK
■Series
■Schedule
◆ TSON Advance
- Small Package (Smaller than SOP-8, Foot print ratio
▲64％)
- High heat radiation (Same power dissipation level as SOP-
8)
Dimension
Note: Specification and MP schedule of products under development are subject to change.
13
Polarity Product
Name
ES
(CY)
CS
(CY)
MP
(CY)
Nch TPCA8083 S1CF4 OK OK OK
TPCA8085 S1CF6 OK OK 2013/Feb
TPCA8084 S1CF5 OK OK OK
TPCA8086 S1CF7 OK OK 2013/Feb
TPCA8089 S1BG5 OK OK OK
Pch TPCA8122 S1CF8 OK OK 2013/Feb
TPCA8124 S1CG0 OK OK 2013/Feb
TPCA8123 S1CF9 OK OK 2013/Feb
TPCA8125 S1CG1 OK OK 2013/Feb
TPCA8135 S1BG6 OK OK OK
■Schedule
■Automotive MOSFET New Product Series 2
◆ SOP Advance
- Suitable for Middle power, Thin, High heat radiation, Same
package size as SOP-8
Dimension
Note: Specification and MP
schedule of products under
development are subject to change.
■Series
Polarity Product
Name
VDSS
(V)
ID(A) RDS(ON)
max(mΩ)
VDS=6V
RDS(ON)
max(mΩ)
VDS=10V
Ciss
typ(pF)
Crss
typ(pF)
Nch TPCA8083 S1CF4 40 60 5.6 3.3 4540 530
TPCA8085 S1CF6 40 10.4 5.7 2050 250
TPCA8084 S1CF5 60 60 8.0 5.3 4480 400
TPCA8086 S1CF7 35 16.6 11.2 1990 170
TPCA8089 S1BG5 5 91 63 450 45
Pch TPCA8122 S1CF8 -40 -60 7.2 5.0 7340 770
TPCA8124 S1CG0 -35 14.4 9.5 3750 370
TPCA8123 S1CF9 -60 -50 14.9 11.1 7000 540
TPCA8125 S1CG1 -25 34.4 25.5 3650 260
TPCA8135 S1BG6 -5 162 125 820 62
14
Circuit Product
Name
VDSS
(V)
ID
(A)
RDS(ON)
max(mΩ)
VDS=6V
RDS(ON)
max(mΩ)
VDS=10V
Ciss
typ(pF)
Crss
typ(pF)
Nch
Single
TPCP8009 S1BF6 40
10 19.5 11.9 1250 165
TPCP8010 S1BF8 6 31.2 24.8 600 75
TPCP8011 S1BG1 5 41.6 33.2 505 66
TPCP8012 S1DF9 60
8 23.7 19.5 1160 120
TPCP8013 S1DG3 4 63.3 54 515 49
Pch
Single
TPCP8107 S1BF7 -40 -8 26.9 18.1 2160 238
TPCP8109 S1BG2 -4.5 76.8 52.4 790 85
TPCP8110 S1DG0 -60 -5 53.3 39.5 2075 150
TPCP8111 S1DG4 -3 117 158.4 760 60
Nch dual TPCP8207 S1BG4 40 5 51 37.8 505 66
Nch+Pch TPCP8407 S1BG3 40/-40 5/-4 62.8/82.2 36.3/56.8 505/810 66/85
■ Series
Circuit Product
Name
ES
(CY)
CS
(CY)
MP
(CY)
Nch
Single
TPCP8009 S1BF6 OK OK OK
TPCP8010 S1BF8 OK OK OK
TPCP8011 S1BG1 OK OK OK
TPCP8012 S1DF9 OK OK OK
TPCP8013 S1DG3 OK OK OK
Pch
Single
TPCP8107 S1BF7 OK OK 2013/Feb
TPCP8109 S1BG2 OK OK 2013/Feb
TPCP8110 S1DG0 OK OK 2013/Feb
TPCP8111 S1DG4 OK OK 2013/Feb
Nch dual TPCP8207 S1BG4 OK OK OK
Nch+Pch TPCP8407 S1BG3 OK OK 2013/Feb
■Schedule
◆ PS-8
- Small package (Suitable for Small power motor,
Solenoid drive application)
- High power dissipation by Multi flat lead package
■Automotive MOSFET New Product Series 3
2.8mm 2.9 mm
Dimension
Note: Specification and MP
schedule of products under
development are subject to change.
t=0.8mm
15
Automotive-MOS
Nch Line up
Tch=175 degrees Guaranteed (conform to AEC-Q101 )
MOSFET for automotive （New Product series）
Pch Line up
Tch=175 degrees Guaranteed (conform to AEC-Q101 )
Note: Specification and MP schedule of products under development are subject to change.
16
Package
Lineup of 6th Gen. IGBT for Hard Switching
(TO-220 Full pack)
TO-3P(N)
TO - 220SIS
TO-220SIS
(TO-247 equivalent)
Part No.
Maximum Rating Electrical Specification
Package
VCES
IC(DC)
ICP
tSC
@Tj≤
125℃
VCE(sat) Typ.
tf Typ.
@TC=
25℃
TC=
100℃ @IC
GT15J341
600V
15A 8A 60A
5s
1.5V
15A 0.08s TO-220SIS
GT20J341 20A 11A 80A 20A 0.05s TO-220SIS
GT30J341 59A 33A 120A 30A 0.04s TO-3P(N)
GT50J342
* 80A 55A 200A 5s 1.5V 50A 0.05s TO-3P(N)
Rating & Electrical Specifications
(Ta=25℃, unless otherwise specified)
* : Under development
Sample available. MP in Jan-13
Fast recovery diode (FRD) are built-in.
Newly developed 6th generation IGBTs (600V) feature
low VCE(sat) by applying thin PT wafer technology.
They are suitable for use in motor drive, solar inverter,
UPS, etc.
As for GT30J341 and GT50J342, Toshiba guarantees
175 ℃ of the maximum junction temperature, which
enables to use in automobile.
Note: Specification and MP schedule of products under development are subject to change.
17
AC
Input
Voltage
Output
Power Frequency Part No. VCES ID(DC) Package Feature
AC100V
Current
resonance
～3000W
～35kHz GT50JR21 600V 50A TO-3P(N) RC-IGBT,
Low VCE(sat)
～90kHz GT50JR22 600V 50A TO-3P(N)
RC-IGBT,
Fast
Switching
Voltage
resonance
～1500W
15k～
50kHz
GT50MR21 900V 50A TO-3P(N)
RC- IGBT,
Low VCE(sat) &
Fast
Switching
GT50NR21 1050V 50A TO-3P(N)
GT60PR21 1100V 60A TO-3P(N)
AC200V
Voltage
resonance
～2200W
15k～
50kHz
GT40QR21 1200V 40A TO-3P(N)
GT40RR21 1350V 40A TO-3P(N)
GT40WR21 1800V 40A TO-3P(N)
Lineup of 6.5th Gen. RC-IGBT for Soft Switching
Package
TO-3P(N)
(TO-247 equivalent)
The RC-IGBT (Reverse-Conducting IGBT) family consists
of a freewheeling diode monolithically integrated in an
IGBT chip. The RC-IGBT family is environmentally friendly
since it eliminates the need for a separate diode.
They are suitable for use in IH and microwave oven.
175 ℃ of the maximum junction temperature is guaranteed
Note: Specification and MP schedule of products under development are subject to change.
18
For Audio amplifier 2SA1943N, 2SC5200N
Bipolar Transistor （New Product）
Features
• Our new products of TO-3PN carried pellets same as "2SA1943 and 2SC5200".
• It excels in sound quality and suitable for use in 100-W high fidelity audio
amplifier’s output stage.
• It realized high performance in comparison with "NJW0302G and NJW0281G“
and “2STA1943, 2STC5200”.
• hFE rank is only one (hFE = 80 to 160).
VCE
(V) IC
(A) IC
(A) IB
(A)
TOSHIBA 2SA1943 PNP TO-3P(L) -230 -15 150 1.3 80 to 160 -5 -1 -3.0 -8 -0.8
TOSHIBA 2SC5200 NPN TO-3P(L) 230 15 150 1.3 80 to 160 5 1 3.0 8 0.8
TOSHIBA TTA1943 PNP TO-3P(L) -230 -15 150 1.1 80 to 160 -5 -1 -3.0 -8 -0.8
TOSHIBA TTC5200 NPN TO-3P(L) 230 15 150 1.1 80 to 160 5 1 3.0 8 0.8
TOSH IBA 2 SA1943 N PNP TO- 3P(N ) -230 -15 150 1.0 80 to 160 -5 -1 -3.0 -8 - 0.8
TOSH IBA 2SC5 20 0N NPN TO- 3P(N ) 230 15 150 1 .0 8 0 to 1 60 5 1 3.0 8 0 .8
ON-Semiconductor NJW0302G PNP TO-3P(N) -230 -15 150 1.0 75 to 150 -5 -1 -1.0 5 -0.5
ON-Semiconductor NJW0281G NPN TO-3P(N) 230 15 150 1.0 75 to 150 5 1 1.0 5 0.5
ST Micro 2STA1943 PNP TO-3P(L) -230 -15 150 1.0 80 to 160 -5 -1 -3.0 -8 -0.8
ST Micro 2STC5200 NPN TO-3P(L) 230 15 150 1.0 80 to 160 5 1 3.0 8 0.8
VCE(sat)Max.
Package
hFE
VCEO
(V) IC
(A)
Maximun Ratings
PC
(W)
PC *
Actual
Abillity
Maker Polarity
Part
Number
Main Characteristics
We recommend our products instead of On-Semi’s / ST Micro’s and other
competitors for your applications.
★High performance(Sound quality)
⇒ TO-3P(N) 2SA1943N, 2SC5200N
★More High Performance(Sound quality, Power)
⇒ TO-3P(L) 2SA1943, 2SC5200 or TTA1943, TTC5200
Recommended Lineup for Audio amplifier
* The ratio when “2SA1943N and 2SC5200N” is set to 1.0
NEW
NEW
19
SBD has tradeoff in VFM – IRRM characteristic.
The new SBD are improved tradeoff relationship between the
Owing to low peak forward voltage(VFM) and low peak repetitive forward voltage
(IRRM) characteristics, these SBDs provide low power loss, help reduce the size and
improve the power efficiency of mobile handsets, switching power supplies, etc.,
thereby improving their overall performance.
1
10
100
1000
0.25 0.3 0.35 0.4 0.45 0.5
VFM(V)@IF=0.7A
IRRM(μA)@VRRM=30V
US-FLATTM S-FLATTM M-FLATTM
0 ~ 0.1
3.5 0.2
2.6 0.1
0.98 0.1
0.9 0.1
+ 0.2
0.1
1.6
1.9 0.1
2.5 0.2
0 ~ 0.05
0.6 0.1
0.2
0.1
1.25
0.88 0.1
0.6 0.1
0.6 0.1
4.7 0.2
3.8 0.1
0 ~ 0.1
0.98 0.1
1.75 0.1
+ 0.2
0.12.4
■Small and Medium Diodes. Better tradeoff SBD.
@IFM(A)
US-FLAT CUS10I30A 0.06 0.39 0.7 OK
CRS10I30A 0.06 0.39 0.7 OK
CRS10I30B 0.06 0.42 1.0 OK
CRS10I30C 0.10 0.36 1.0 OK
M-FLAT CMS10I30A 0.10 0.36 1.0 OK
US-FLAT CUS15I30A 0.06 0.46 1.5 OK
CRS15I30A 0.06 0.46 1.5 OK
CRS15I30B 0.10 0.40 1.5 OK
CRS20I30A 0.06 0.49 2.0 OK
CRS20I30B 0.10 0.45 2.0 OK
M-FLAT CMS20I30A 0.10 0.45 2.0 OK
S-FLAT CRS30I30A 0.10 0.49 3.0 OK
M-FLAT CMS30I30A 0.10 0.49 3.0 OK
@IFM(A)
US-FLAT CUS10I40A 0.06 0.49 0.7 OK
CRS10I40A 0.06 0.49 0.7 OK
CRS10I40B 0.10 0.45 1.0 OK
M-FLAT CMS10I40A 0.10 0.45 1.0 OK
S-FLAT CRS15I40A 0.06 0.55 1.5 OK
M-FLAT CMS15I40A 0.10 0.49 1.5 OK
CRS20I40A 0.06 0.60 2.0 OK
CRS20I40B 0.10 0.52 2.0 OK
M-FLAT CMS20I40A 0.10 0.52 2.0 OK
3.0A M-FLAT CMS30I40A 0.10 0.55 3.0 OK
VRRM=40V
Parts number Electrical characteristic (MAX)
VFM(V)
S-FLAT
SBD New Generation Lineup (2) VRRM=40V
MP
3.0A
1.5 A
S-FLAT
2.0A
IRRM(mA)
IF(AV) Package
SBD New Generation Lineup (1) VRRM=30V
IF(AV) VRRM=30V
Package MP
Parts number
1.0A
Electrical characteristic (MAX)
IRRM(mA) VFM(V)
S-FLAT
1.0A
1.5A
2.0A S-FLAT
S-FLAT
Normal
SBD
Better
tradeoff
SBD
◆VFM－IRRM tradeoff◆ ◆Packages◆
20
Target application of DC-DC Converter ICs
Power Device for High-efficiency Power Supply
with DC-DC converter
1chip DC-DC Converter ICs
FPD & Digital Appliance
Flat Panel Display
STB Projector
Blu-ray Recorder
Home
Audio
BS/CS Tuner
Note PC HDD
Note PC & PC Peripheral
ODD
PC communication
OA & Amusement, Industrial
Printer Amusement
Industrial Medical / Security
1chipDCDC
Protection
This portion is integrated.
・Reduction of component parts
・The wiring inductance don’t affect
・Reduction of mounting area
・Built-in protection circuit
21
The products can achieve high efficiency and Small package
with a minimum of external components.
・Load current lineup consists of 0.5A to 6.5A
・High speed switching enables external components to be downsized
・Transient load response characteristic is achieved by current mode control
・Feedback voltage has high accuracy ：0.8V±1％ （Especially TCV71xx Series ）
・Allows the use of a small surface-mount ceramic capacitor as an output
filter capacitor
・Small size and low thermal resistance package
・Lineup of internal LDO type
・Step-up DC-DC Converter is under development
Single chip DC-DC Converter IC Road Map
22
Single chip DC-DC Converter IC Line up
※Output Current IOUT has the Input Voltage VIN dependency
23
24
25
26
27
Target application of HV-IPD
Air-Conditioner Washing-
Machine
Refrigerator
Motor
(Indoor-unit
Outdoor-unit) FAN
Pump Compressor
FAN
Ventilator
Water heater
Pump
Application
Air Cleaner
Massage chair
Motor
Dish-Washer
HV IPD is used for many small BL DC Motor application.
□Toshiba HV-IPD（High voltage Intelligent
Power
Module） is 1chip driver for motor control.
□We have wide line-up from 250V/1A to
500V/3A.
28
HV-IPD Line up
大電流化/機能の追加に
より、ラインアップ拡大
中。
PRODUCT
NAME RATING
FUNCTION
FGC
Hall
SENSOR
INPUT
Signal
6
INPUT
3 Phase
MatrixLo
gic
PWM
OVER
CURR
ENT
OVER
TEMP
ERAT
URE
UNDER
VOLTAGE
TPD4142K 500V/1A － ○ － ○ ○ ○ ○
TPD4123K 500V/1A － － ○ － ○ ○ ○
TPD4123AK 500V/1A － － ○ － － ○ ○
TPD4144K 500V/2A － － ○ － ○ ○ ○
TPD4144AK 500V/2A － － ○ － － ○ ○
TPD4135K 500V/3A － － ○ － ○ ○ ○
TPD4135AK 500V/3A － － ○ － － ○ ○
TPD4146K 500V/1A ○ ○ － ○ ○ ○ ○
Package：DIP26
Easy for PCB design. High voltage power pins and low voltage
signal pins are separated.
Wide clearance for High voltage pin to pin：3.8mm
Small PKG：32ｘ13mm
Thin PKG ： thickness=3.8(MAX)mm
Low voltage
pins
High Voltage pins
29
TPD4142K / TPD4146K
TPD4123AK / TPD4144AK / TPD4135AK+ TC7600 etc
Types of system
•Variable-speed drive of a DC blushless motor is possible by
microcomputer control.
•Built in Hall amp, Possible to use Hall element.
•It is suitable device for Sine -wave control.
•Possible for each phase current sensing by three shunt resistance.
Sine-Wave Control type
Square-Wave Control type
30
LV-IPD (New product)
TPD1055FA
Block diagram
Features
Operation voltage : 5 to 18V
Operation temperature : -40 to 125℃
On resistance :
120mΩ(max)@Tch=25℃
Protections :
Over temperature : 150℃ min
Over current : 3A min
Diagnosis :
Over temperature : 150℃ min
Over current : 3A min
Open load : 1kΩ min
Battery short : VDD-1.5V Min
Package
SON10(Non lead Package)
3mm
3mm
0.7mm
ES:Jan.13
A monolithic power IC with a structure combining a control block and
a low on resistance MOSFET in High radiation package.
31
LV-IPD (New product)
TPD1058FA
Block diagram
Features
Operation voltage : 4.5 to 5.5V
Standby current : 10μA
@VSTBY=0V,VIN=0V,VDD=5V
Input voltage : 2V min
Operation temperature: -40 to 125℃
On resistance :
100mΩ(max)@Tch=25℃
Protections :
Over temperature : 150℃ min
Over current : (7A) min
Diagnosis :
Over temperature : 150℃ min
Over current : (7A) min
Open load : 10kΩ min
Package
SON10(Non lead Package)
3mm
3mm
0.7mm
A monolithic power IC with a structure combining a control block and
a low on resistance MOSFET in High radiation package.
Can directly drive a power load form a microprocessor of 3.3V output.
ES:Jan.13
32
New Product Line up (1)
Note: Specification and MP schedule of products under development are subject to change.
Plan of New Products（MOSFET：HV-MOS［DTMOSⅢ/Ⅳ］)
High Voltage MOSFET TK5A60V TO-220SIS 600 0.9 Infineon IPA60R950C6 OK OK
*1
High Voltage MOSFET TK6A60V TO-220SIS 600 0.75 Infineon IPA60R600C6 OK OK
*1
High Voltage MOSFET TK7A60V TO-220SIS 600 0.6 Infineon IPA60R600C6 OK OK
*1
High Voltage MOSFET TK8A60V TO-220SIS 600 0.5 Infineon IPA60R520C6 OK OK
*1
High Voltage MOSFET TK18A60V TO-220SIS 600 0.19 Infineon IPA60R190C6 OK OK
*1
High Voltage MOSFET TK22A60V TO-220SIS 600 0.15 Infineon IPA60R160C6 OK OK
*1
High Voltage MOSFET TK33A60V TO-220SIS 600 0.088 Infineon IPA60R099C6 OK OK
*1
High Voltage MOSFET TK18E60V TO-220 600 0.19 Infineon IPP60R190C6 OK OK
*1
High Voltage MOSFET TK18J60V
TO-3P(N)
600 0.19 Infineon IPW60R190C6 OK OK
*1
High Voltage MOSFET TK22J60V
TO-3P(N)
600 0.15 Infineon IPW60R160C6 OK OK
*1
High Voltage MOSFET TK33J60V
TO-3P(N)
600 0.088 Infineon IPW60R099C6 OK OK
*1
High Voltage MOSFET TK45J60V
TO-3P(N)
600 0.065 Infineon IPW60R070C6 OK OK
*1
High Voltage MOSFET TK5P60V
DPAK 600 0.9 Infineon IPD60R950C6 OK OK *1
High Voltage MOSFET TK6P60V
DPAK 600 0.75 Infineon SPD06N60C3 OK OK *1
High Voltage MOSFET TK7P60V
DPAK 600 0.6 Infineon IPD60R600C6 OK OK *1
High Voltage MOSFET TK8P60V
DPAK 600 0.5 Infineon IPD60R520C6 OK OK *1
High Voltage MOSFET TK5Q60V
IPAK 600 0.9 Infineon SPU07N60C3 OK OK *1
High Voltage MOSFET TK6Q60V
IPAK 600 0.75 Infineon SPU07N60C3 OK OK *1
High Voltage MOSFET TK7Q60V
IPAK 600 0.6 Infineon SPU07N60C3 OK OK *1
High Voltage MOSFET TK8Q60V
IPAK 600 0.5 Infineon SPU07N60C3 OK OK *1
High Voltage MOSFET TK18C60V
I2PAK 600 0.19 Infineon IPI60R190C6 OK OK *1
High Voltage MOSFET TK22C60V
I2PAK 600 0.15 Infineon IPI60R165CP OK OK *1
High Voltage MOSFET TK18G60V
D2PAK 600 0.19 Infineon IPB60R190C6 OK Jan-13 *1
High Voltage MOSFET TK22G60V
D2PAK 600 0.15 Infineon IPB60R160C6 OK Jan-13 *1
High Voltage MOSFET TK65L60V
TO-3P(L)
600 0.038 Infineon IPW60R041C6 OK OK
*1
High Voltage MOSFET TK80L60V
TO-3P(L)
600 0.025 Infineon IPW60R041C6 OK OK
*1
High Voltage MOSFET TK5P60W
DPAK 600 0.9 OK Jan-13 OK
High Voltage MOSFET TK6P60W
DPAK 600 0.82 OK Feb-13 OK
High Voltage MOSFET TK7P60W
DPAK 600 0.6 OK Feb-13 OK
High Voltage MOSFET TK8P60W
DPAK 600 0.5 OK Feb-13 OK
High Voltage MOSFET TK10P60W
DPAK 600 0.43 OK Dec-12 OK
High Voltage MOSFET TK12P60W
DPAK 600 0.34 OK Feb-13 OK
High Voltage MOSFET TK5Q60W
IPAK 600 0.9 OK Feb-13 OK
High Voltage MOSFET TK6Q60W
IPAK 600 0.82 OK Feb-13 OK
High Voltage MOSFET TK7Q60W
IPAK 600 0.6 OK Feb-13 OK
High Voltage MOSFET TK8Q60W
IPAK 600 0.5 OK Feb-13 OK
High Voltage MOSFET TK10Q60W
IPAK 600 0.43 OK Feb-13 OK
High Voltage MOSFET TK12Q60W
IPAK 600 0.34 OK Feb-13 OK
High Voltage MOSFET TK16C60W
I2PAK 600 0.19 OK 2013/2Q OK
High Voltage MOSFET TK20C60W
I2PAK 600 0.16 Jan-13 2013/2Q Jan-13
High Voltage MOSFET TK16G60W
D2PAK 600 0.19 OK Feb-13 OK
High Voltage MOSFET TK20G60W
D2PAK 600 0.16 OK Feb-13 Jan-13
High Voltage MOSFET TK10E60W TO-220 600 0.38
OK Jan-13 OK
High Voltage MOSFET TK12E60W TO-220 600 0.3
OK Feb-13 OK
High Voltage MOSFET TK16E60W TO-220 600 0.19
OK Jan-13 OK
High Voltage MOSFET TK20E60W TO-220 600 0.16
OK Feb-13 Jan-13
High Voltage MOSFET TK31E60W TO-220 600 0.088
OK Jan-13 OK
High Voltage MOSFET TK5A60W TO-220SIS 600 0.9 OK Jan-13
OK
High Voltage MOSFET TK6A60W TO-220SIS 600 0.75 Infineon IPA60R600C6
OK Feb-13 OK
High Voltage MOSFET TK7A60W TO-220SIS 600 0.6
Dec-12 Jan-13 OK
High Voltage MOSFET TK8A60W TO-220SIS 600 0.5 OK Feb-13 OK
High Voltage MOSFET TK10A60W TO-220SIS 600 0.38 Infineon IPA60R380C6
OK OK OK
High Voltage MOSFET TK12A60W TO-220SIS 600 0.3 Infineon IPA60R280C6
OK OK OK
High Voltage MOSFET TK16A60W TO-220SIS 600 0.19 Infineon IPA60R190C6
OK OK OK
High Voltage MOSFET TK20A60W TO-220SIS 600 0.16
Jan-13 Feb-13 Jan-13
High Voltage MOSFET TK31A60W TO-220SIS 600 0.088 Infineon IPA60R099C6
OK Jan-13 OK
High Voltage MOSFET TK39A60W TO-220SIS 600 0.065 OK Feb-13
OK
High Voltage MOSFET TK12J60W
TO-3P(N) 600 0.3 OK Feb-13 OK
High Voltage MOSFET TK16J60W
TO-3P(N) 600 0.19 OK Jan-13 OK
High Voltage MOSFET TK20J60W
TO-3P(N) 600 0.16 Jan-13 Feb-13 Jan-13
High Voltage MOSFET TK31J60W
TO-3P(N) 600 0.088 OK OK OK
High Voltage MOSFET TK39J60W
TO-3P(N) 600 0.065 Infineon IPW60R070C6 OK OK OK
High Voltage MOSFET TK62J60W
TO-3P(N) 600 0.038 Infineon IPW60R041C6 OK Jan-13 OK
High Voltage MOSFET TK16N60W
TO-247 600 0.19 OK 2013/1Q OK
High Voltage MOSFET TK20N60W
TO-247 600 0.16 OK 2013/1Q Jan-13
High Voltage MOSFET TK31N60W
TO-247 600 0.088 OK 2013/1Q OK
High Voltage MOSFET TK39N60W
TO-247 600 0.065 OK 2013/1Q OK
High Voltage MOSFET TK62N60W
TO-247 600 0.038 OK 2013/1Q OK
High Voltage MOSFET TK100L60W
TO-3P(L)
600 0.018 Infineon IPW60R041C6 OK Feb-13
OK
High Voltage MOSFET TK16A60W5 TO-220SIS 600 0.19
OK OK OK
High Voltage MOSFET TK14A65W TO-220SIS 650 0.25 OK Mar-13 Jan-13
*1 Please contact our sales persons.
VDSS
(V)
RDS(ON) Max.
(Ω）
Vendor P/N
TD on Web
site
Q：CY
ES
Q：CY
MP
Q：CY
Main Characteristics Major Competitor's
Product Category Product Name Package
33
New Product Line up (2)
Note: Specification and MP schedule of products under development are subject to change.
Plan of New Products（MOSFET：LV-MOS［UMOSⅧ］)
Low Voltage MOSFET(High speed) TPHR9003NH SOP Advance 30 0.0009 Infineon BSC011N03LS
Jan-13 Mar-13 Feb-13
Low Voltage MOSFET(High speed) (S1CN9) SOP Advance 30 0.0015 Infineon BSC014N03LSG
Jan-13 May-13 Mar-13
Low Voltage MOSFET(High speed) (S1CP0) SOP Advance 30 0.0029 Infineon BSC025N03LSG
Jan-13 May-13 Mar-13
Low Voltage MOSFET(High speed) (S1CP2) SOP Advance 30 0.0039 Infineon BSC025N03LSG
Jan-13 May-13 Mar-13
Low Voltage MOSFET(High speed) TPH6R003NH SOP Advance 30 0.006 Infineon BSC059N03SG
OK Apr-13 Feb-13
Low Voltage MOSFET(High speed) TPH8R903NH SOP Advance 30 0.0089 Infineon BSC094N03SG
OK Apr-13 Feb-13
Low Voltage MOSFET(High speed) TPH11003NH SOP Advance 30 0.0106 Infineon BSC120N03LSG
OK Apr-13 Feb-13
Low Voltage MOSFET(High speed) (S1DU5) SOP Advance 60 0.0051
Apr-13 Aug-13 Aug-13
Low Voltage MOSFET(High speed) (S1DU6) SOP Advance 60 0.0114
Dec-12 Apr-13 Jun-13
Low Voltage MOSFET(High speed) TPH2R306NH SOP Advance 60 0.0023 Infineon BSC028N06LS3 G
OK Jan-13 OK
Low Voltage MOSFET(High speed) TPH4R606NH SOP Advance 60 0.0046 renesas RJK0660DPA
OK OK OK
Low Voltage MOSFET(High speed) TPH5R906NH SOP Advance 60 0.0059 renesas RJK0655DPB-00
OK OK OK
Low Voltage MOSFET(High speed) TPH7R506NH SOP Advance 60 0.0075 Infineon BSC076N06NS3 G
OK OK OK
Low Voltage MOSFET(High speed) TPH14006NH SOP Advance 60 0.014 Infineon BSC110N06NS3 G
OK OK OK
Low Voltage MOSFET(High speed) TPH4R008NH SOP Advance 80 0.004 Infineon BSC047N08NS3 G
OK Jan-13 OK
Low Voltage MOSFET(High speed) TPH8R008NH SOP Advance 80 0.008 Fairchild FDMS86322
OK Nov-12 OK
Low Voltage MOSFET(High speed) TPH12008NH SOP Advance 80 0.0123 Infineon BSC123N08NS3 G
OK Nov-12 OK
Low Voltage MOSFET(High speed) TPH4R50ANH SOP Advance 100 0.0045 Infineon BSC060N10NS3 G
OK Jan-13 OK
Low Voltage MOSFET(High speed) TPH8R80ANH SOP Advance 100 0.0088 Infineon BSC100N10NSF G
OK OK OK
Low Voltage MOSFET(High speed) TPH1400ANH SOP Advance 100 0.0136 Infineon BSC159N10LSF G
OK OK OK
Low Voltage MOSFET(High speed) (S1AG4) SOP Advance 150 0.018 Infineon BSC190N15NS3 G
Jul-13 Oct-13 Sep-13
Low Voltage MOSFET(High speed) (S1ER9) SOP Advance 150 0.031 Infineon BSC520N15NS3 G
Jun-13 Sep-13 Sep-13
Low Voltage MOSFET(High speed) (S1DT2) SOP Advance 150 0.068 renesas HAT2184WP
Jul-13 Oct-13 Sep-13
Low Voltage MOSFET(High speed) (S1AG5) SOP Advance 200 0.031 Infineon BSC320N20NS3 G
Jul-13 Oct-13 Sep-13
Low Voltage MOSFET(High speed) (S1ER7) SOP Advance 200 0.055 Infineon BSC900N20NS3 G
Jun-13 Sep-13 Sep-13
Low Voltage MOSFET(High speed) (S1DT4) SOP Advance 200 0.121 Infineon BSC22DN20NS3 G
Jul-13 Oct-13 Sep-13
Low Voltage MOSFET(High speed) (S1AG6) SOP Advance 250 0.058 Infineon BSC600N25NS3 G
Jul-13 Oct-13 Sep-13
Low Voltage MOSFET(High speed) (S1ER8) SOP Advance 250 0.1 Infineon BSC16DN25NS3 G
Jun-13 Sep-13 Sep-13
Low Voltage MOSFET(High speed) (S1DT7) SOP Advance 250 0.223 renesas HAT2192WP
Jul-13 Oct-13 Sep-13
Low Voltage MOSFET(Low Ron) (S1EH5) SOP Advance 30 0.0019
OK Apr-13 Mar-13
Low Voltage MOSFET(Low Ron) (S1AG1) SOP Advance 30 0.0045 Infineon BSC072N03LD G
OK Apr-13 Mar-13
Low Voltage MOSFET(Low Ron) (S1FV0) TSON Advance 30 0.002
Jan-13 Apr-13 Feb-13
Low Voltage MOSFET(Low Ron) TPN2R503NC TSON Advance 30 0.0025 Infineon BSZ035N03LS G
OK OK OK
Low Voltage MOSFET(Low Ron) TPN4R203NC TSON Advance 30 0.0042 Infineon BSZ019N03LS
OK OK OK
Low Voltage MOSFET(Low Ron) TPN6R303NC TSON Advance 30 0.0063 Infineon BSZ050N03LSG
OK OK OK
Low Voltage MOSFET(High speed) (S1EC5) TSON Advance 30 0.0026 Infineon BSZ050N03MS G
Jan-13 May-13 Feb-13
Low Voltage MOSFET(High speed) (S1CP7) TSON Advance 30 0.0035 Infineon BSZ058N03LS G
Jan-13 May-13 Feb-13
Low Voltage MOSFET(High speed) (S1CP8) TSON Advance 30 0.0058 Infineon BSZ035N03LSG
Jan-13 Apr-13 Feb-13
Low Voltage MOSFET(High speed) TPN8R903NH TSON Advance 30 0.0089 Infineon BSZ100N03MSG
OK Apr-13 Feb-13
Low Voltage MOSFET(High speed) TPN11003NH TSON Advance 30 0.0106 Infineon BSZ130N03MSG
OK Apr-13 Feb-13
Low Voltage MOSFET(High speed) (S1DU7) TSON Advance 60 0.0065
Apr-13 Aug-13 Aug-13
Low Voltage MOSFET(High speed) TPN11006NC TSON Advance 60 0.0114 Infineon BSZ100N06NS3 G
OK Feb-13 Feb-13
Low Voltage MOSFET(High speed) TPN7R506NH TSON Advance 60 0.0075 Infineon BSZ076N06NS3 G
OK Jan-13 Dec-12
Low Voltage MOSFET(High speed) TPN14006NH TSON Advance 60 0.014 Infineon BSZ110N06NS3 G
OK OK OK
Low Voltage MOSFET(High speed) TPN22006NH TSON Advance 60 0.022 vishay Si7414DN
OK OK OK
Low Voltage MOSFET(High speed) TPN13008NH TSON Advance 80 0.0133 Infineon BSZ123N08NS3 G
OK Jan-13 OK
Low Voltage MOSFET(High speed) TPN30008NH TSON Advance 80 0.03 Infineon BSZ340N08NS3 G
OK OK OK
Low Voltage MOSFET(High speed) TPN1600ANH TSON Advance 100 0.016 Infineon BSZ160N10NS3 G
OK Jan-13 OK
Low Voltage MOSFET(High speed) TPN3300ANH TSON Advance 100 0.033 Infineon BSZ440N10NS3 G
OK OK OK
Low Voltage MOSFET(High speed) (S1CL7) TSON Advance 150 0.068 Infineon BSZ520N15NS3 G
Jul-13 Oct-13 Sep-13
Low Voltage MOSFET(High speed) (S1CL8) TSON Advance 200 0.121 Infineon BSZ900N20NS3 G
Jul-13 Oct-13 Sep-13
Low Voltage MOSFET(High speed) (S1CL9) TSON Advance 250 0.223 Infineon BSZ16DN25NS3 G
Jul-13 Oct-13 Sep-13
Low Voltage MOSFET(High speed) TK100A06N1 TO-220SIS 60 0.0027 Infineon IPA032N06N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK58A06N1 TO-220SIS 60 0.0054 Infineon IPA057N06N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK40A06N1 TO-220SIS 60 0.0104 Infineon IPA093N06N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK30A06N1 TO-220SIS 60 0.015 Infineon IPA028N08N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK100A08N1 TO-220SIS 80 0.0032 Infineon IPA057N08N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK72A08N1 TO-220SIS 80 0.0045 Infineon IPA100N08N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK46A08N1 TO-220SIS 80 0.0084 Infineon IPA030N10N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK35A08N1 TO-220SIS 80 0.0122 Infineon IPA045N10N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK100A10N1 TO-220SIS 100 0.0038 Infineon IPA086N10N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK65A10N1 TO-220SIS 100 0.0048 Infineon IPA086N10N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK40A10N1 TO-220SIS 100 0.0082 Infineon IPA126N10N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK34A10N1 TO-220SIS 100 0.0095 IR IRFI4410Z
OK OK OK
Low Voltage MOSFET(High speed) TK22A10N1 TO-220SIS 100 0.0138 Infineon IPA126N10N3G
OK OK OK
Low Voltage MOSFET(High speed) TK72A12N1 TO-220SIS 120 0.0045
OK OK OK
Low Voltage MOSFET(High speed) TK56A12N1 TO-220SIS 120 0.0075 *APEC AP92T12GI
OK OK OK
Low Voltage MOSFET(High speed) TK42A12N1 TO-220SIS 120 0.0094
OK Mar-13 OK
Low Voltage MOSFET(High speed) TK32A12N1 TO-220SIS 120 0.0138 *APEC AP75T12GI
OK Mar-13 OK
Low Voltage MOSFET(High speed) TK100E06N1 TO-220AB 60 0.0023 Infineon IPP024N06N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK58E06N1 TO-220AB 60 0.0054 Infineon IPP052N06L3 G
OK OK OK
Low Voltage MOSFET(High speed) TK40E06N1 TO-220AB 60 0.0104 Infineon IPP093N06N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK30E06N1 TO-220AB 60 0.015 NXP PSMN015-60PS
OK OK OK
Low Voltage MOSFET(High speed) TK100E08N1 TO-220AB 80 0.0032 Infineon IPP028N08N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK72E08N1 TO-220AB 80 0.0043 Infineon IPP037N08N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK46E08N1 TO-220AB 80 0.0084 Infineon IPP028N08N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK35E08N1 TO-220AB 80 0.0122 Infineon IPP070N08N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK100E10N1 TO-220AB 100 0.0034 Infineon IPP04CN10N G
OK OK OK
Low Voltage MOSFET(High speed) TK65E10N1 TO-220AB 100 0.0048 Infineon IPP05CN10L G
OK OK OK
Low Voltage MOSFET(High speed) TK40E10N1 TO-220AB 100 0.0082 Infineon IPP08CN10N G
OK OK OK
Low Voltage MOSFET(High speed) TK34E10N1 TO-220AB 100 0.0095 Infineon IPP086N10N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK22E10N1 TO-220AB 100 0.0138 Infineon IPP12CN10N G
OK OK OK
Low Voltage MOSFET(High speed) TK72E12N1 TO-220AB 120 0.0044 Infineon IPP041N12N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK56E12N1 TO-220AB 120 0.007 Infineon IPP076N12N3 G
OK OK OK
Low Voltage MOSFET(High speed) TK42E12N1 TO-220AB 120 0.0094
OK Mar-13 OK
Low Voltage MOSFET(High speed) TK32E12N1 TO-220AB 120 0.0138 Infineon IPP147N12N3 G
OK Mar-13 OK
Low Voltage MOSFET(High speed) TK100G06N1 TO-220SM 60 0.002 Infineon IPB034N06N3 G
OK Feb-13 Nov-12
Low Voltage MOSFET(High speed) TK100G08N1 TO-220SM 80 0.0028 Infineon IPB031NE7N3G
OK Feb-13 Nov-12
Low Voltage MOSFET(High speed) TK100G10N1 TO-220SM 100 0.0031 Infineon IPB027N10N3 G
OK Feb-13 Nov-12
Low Voltage MOSFET(High speed) TK65G10N1 TO-220SM 100 0.0045 Infineon IPB042N10N3 G
OK Feb-13 Nov-12
Low Voltage MOSFET(High speed) TK72G12N1 TO-220SM 120 0.004 Infineon IPB038N12N3 G
OK Feb-13 Nov-12
Product Name：Parentheses show the development code. *APEC：Advanced Power Electronics Corp.
Product Category Product Name Package
Vendor
Main Characteristics
VDSS
(V)
RDS(ON) Max.
(Ω）
P/N
ES
Q：CY
MP
Q：CY
Major Competitor's TD on Web
site
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New Product Line up (3)
Note: Specification and MP schedule of products under development are subject to change.
Plan of New Products(ＭＯＳＦＥＴ for Automotive/SPD/HV-IPD/LV-IPD/BJT）
Low Voltage MOSFET(Automotive) TPCA8089 SOP Advance 60 5OK OK OK
Low Voltage MOSFET(Automotive) TPCA8135 SOP Advance -60 -5 OK OK OK
Low Voltage MOSFET(Automotive) TPCA8083 SOP Advance 40 60 OK OK Dec-12
Low Voltage MOSFET(Automotive) TPCA8084 SOP Advance 60 60 OK OK Dec-12
Low Voltage MOSFET(Automotive) TPCA8085 SOP Advance 40 40 OK Feb-13 Dec-12
Low Voltage MOSFET(Automotive) TPCA8086 SOP Advance 60 35 OK Feb-13 Dec-12
Low Voltage MOSFET(Automotive) TPCA8122 SOP Advance -40 -60 OK Feb-13 Dec-12
Low Voltage MOSFET(Automotive) TPCA8123 SOP Advance -60 -50 OK Feb-13 Dec-12
Low Voltage MOSFET(Automotive) TPCA8124 SOP Advance -40 -35 OK Feb-13 Dec-12
Low Voltage MOSFET(Automotive) TPCA8125 SOP Advance -60 -25 OK Feb-13 Dec-12
Low Voltage MOSFET(Automotive) TPCC8069 TSON Advance 40 30 OK OK OK
Low Voltage MOSFET(Automotive) TPCC8070 TSON Advance 60 30 OK OK OK
Low Voltage MOSFET(Automotive) TPCC8106 TSON Advance -40 -30 OK OK OK
Low Voltage MOSFET(Automotive) TPCC8107 TSON Advance -60 -25 OK OK OK
Low Voltage MOSFET(Automotive) TPCP8009 PS-8 40 OK OK OK
Low Voltage MOSFET(Automotive) TPCP8010 PS-8 40 OK OK OK
Low Voltage MOSFET(Automotive) TPCP8011 PS-8 40 OK OK OK
Low Voltage MOSFET(Automotive) TPCP8012 PS-8 60 OK OK OK
Low Voltage MOSFET(Automotive) TPCP8013 PS-8 60 OK OK OK
Low Voltage MOSFET(Automotive) TPCP8107 PS-8 -40 OK OK OK
Low Voltage MOSFET(Automotive) TPCP8109 PS-8 -40 OK OK Dec-12
Low Voltage MOSFET(Automotive) TPCP8110 PS-8 -60 OK OK Dec-12
Low Voltage MOSFET(Automotive) TPCP8111 PS-8 -60 OK OK Dec-12
Low Voltage MOSFET(Automotive) TPCP8207 PS-8 40/40 OK OK OK
Low Voltage MOSFET(Automotive) TPCP8407 PS-8 40/-40 OK Feb-13 Dec-12
Low Voltage MOSFET(Automotive) TK100S04N1L DPAK+ 40 OK Feb-13 Dec-12
Low Voltage MOSFET(Automotive) (S1CH5) DPAK+ 100 Dec-12 May-13 Mar-13
Low Voltage MOSFET(Automotive) (S1DK0) DPAK+ 100 Dec-12 May-13 Mar-13
SPD(1chip DC-DC Converter IC) TCV7116FN PS-8 5.6 2.5 Rohm BD91390MUV OK OK Dec-12
SPD(1chip DC-DC Converter IC) TCV7117F SOP Advance 5.6 3 Rohm BD91390MUV OK OK Dec-12
SPD(1chip DC-DC Converter IC) TB7112F SOP Advance 20 0.5(DCDC)+0.4(LDO) Rohm BD9877 Mar-13 Apr-13 Mar-13
SPD(1chip DC-DC Converter IC) TB7113FN PS-8 20 0.5 Rohm BD19910MUFG Feb-13 Apr-13 Mar-13
HV-IPD TPD4142K DIP26 500V 1A HITACHI ECN30206 OK OK OK
HV-IPD TPD4146K DIP26 500V 1A HITACHI ECN30206 OK OK OK
HV-IPD TPD4144K/AK DIP26 500V 2A SANKEN SMA6822 OK OK OK
LV-IPD(Low side switch) TPD1054F PS-8 40 1A Infineon BSP 75N OK Mar-13 Feb-13
LV-IPD(High side switch) TPD1055F SOP-8 5V～18V 3A ST-Micro VN5050 Feb-13 Jul-13 Apr-13
LV-IPD(High side switch) TPD1055FA SON10 5V～18V 3A ST-Micro VN5050 Jan-13 Jun-13 Apr-13
LV-IPD(Low side switch) TPD1058FA SON10 40 (10A) Infineon BTS3118N Jan-13 Sep-13 Jul-13
Bipolar transistor TTA005 NewPW-Mold -50 -5 Renesas 2SA1385-Z,2SA1648-Z OK OK OK
Bipolar transistor 2SC5200N TO-3P(N) 230 15 ON-Semi NJW0302G OK OK OK
Bipolar transistor 2SA1943N TO-3P(N) -230 -15 ON-Semi NJW0281G OK OK OK
Bipolar transistor TTA1452B TO-220SIS -80 -12 OK OK Jan-13
Bipolar transistor TTB1020B TO-220SIS -100 -7 OK OK Jan-13
Bipolar transistor TTC3710B TO-220SIS 80 12 OK OK Jan-13
Bipolar transistor TTD1409B TO-220SIS 400 6OK OK Jan-13
Bipolar transistor TTD1410B TO-220SIS 250 6OK OK Jan-13
Bipolar transistor TTD1415B TO-220SIS 100 7OK OK Jan-13
Bipolar transistor TTA004B TO-126N -160 -1.5 OK Mar-13 Feb-13
Bipolar transistor TTC5460B TO-126N 800 0.05 OK Mar-13 Feb-13
Bipolar transistor TTC004B TO-126N 160 1.5 OK Mar-13 Feb-13
D-IGBT GT50J342 TO-3P(N) 600 55 Infineon IKW50N60T OK Dec-12 Dec-12
D-IGBT S1FN8 TO-3P(N) 1200 40 Infineon IHW20N120R3 Jan-13 Apr-13 Apr-13
D-IGBT GT40RR23 TO-3P(N) 1350 40 Infineon IHW20N135R3 Jan-13 Apr-13 Apr-13
Product Name：Parentheses show the development code.
Product Category Product Name Package
Main Characteristics Major Competitor's
ES
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MP
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TD on Web
site
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Voltage
(V)
Current
(A） Vendor P/N
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