MITSUBISHI SEMICONDUCTOR | MGFC40V5S964 5.9~-6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET _ DESCRIPTION The MGFC40V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 502 system @ High output power Pigg = 10W (TYP) @5.9~6.4GHz High power gain G_p = 8 dB (TYP) @5.9~6.4GHz High power added efficiency Neda = 32% (TYP) @5.9~6.4GHz, PiaB Hermetically sealed metal-ceramic package Low distortion [Item: ~51) IM; = -45 dBc (TYP) @ P, = 29 (dBm) S.C.L. APPLICATION Item-01: 5.9~6.4GHz band power amplifier Item-51: Digital radio communication QUALITY GRADE e-1G R1.25 20.4 + 0.2 (0.803 + 0.008) (0.049) oe N\| zye 064015 | Rio s|z /|o.024 0.008) (R0.047) Nae a II e eS o_] fF SS! o/S 2 HH] Fla 2S ne! 32 % Tal] alm fund w s| t8p- i Z Z42 215 [| S = 24+0.3(0.945 + 0.012) % oO 3|.\6 ~ 13.4 (0,528) 8} s{t S| 4 a 30 =| s/o oo si a|e Ha 1 be t =o o 0 S |g 3/38 -\6 ~ @ GATE @ SOURCE (FLANGE) GF-18 @ ORAIN OUTLINE DRAWING Unit: millimeters inches) | ABSOLUTE MAXIMUM RATINGS (7a =25'c) Symbol Parameter Ratings Unie Va@po Gate to drain voltage 15 Vv Vaso Gate to source voltage 15 v lo Drain current 6 A lor Reverse gate current 20 mA lor Forward gate current 42 mA Pr Total power dissipation a] 42.8 Ww Teh Channel temperature 175 "Cc Tstg Storage temperature 65~ +175 C e1: To = 25C ELECTRICAL CHARACTERISTICS (ta=2s'c) RECOMMENDED BIAS CONDITIONS Vps=10V Ip=2.4A Rg=502Q Refer to Bias Procedure Limits / Symbol Parameter Test conditions Unit Min Typ Max Ipss Saturated drain current Vos =3V, Vos=0V _ 4.5 6 Sm Transconductance Vos=3V, Ip=2.2A _ 2 _ Vestott) Gate to source cut-off valtage Vos =3V, Ip =40mA -2 3 4 Vv Qutput power at 1dB gain T Pigs compression # 39.5 40.5 7 d8m 4 Gup Linear power gain 8 9 _ dB lo Orain current Vos =10V, Ip=2.4A, f=5.9~6.4GHz - 2.4 _ A add Power added efficiency _ 32 _ % IM3 3rd order IM distortion =] 42 45 _ dBc Rth(ch-c) | Thermal resistance a2 AV_ method 3.5 C/W al: ttem-51, 2-tone test P, = 29 dBm Single Carrier Level f=6.4GHz Af = 10MHz. *2: Channel to case MITSUBISHI ELECTRICMITSUBISHI SEMICONDUCTOR MGFC40VS964 5.9~6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS Pigs, Gip vs. f Po, Nadd VS. Pin = a2 & Vps =10V Vpg=10V GLp=11dB1098 3 = lps=2.4A lpg=2.4A 5 Sg 4 PF t=6.15GHz 3 o 6 E 2 9 > t% 40 . = ao 8 = % o 35 G & o E39 z wi 300 z < = a & 9 & 30h a 3 i E 28 2 x a = 5s D> Pa 5 r 1m 6 < 3 2 8 8 2 20 1 1 L l 0 5.9 6.0 6.1 6.2 6.3 6.4 15 20 25 30 FREQUENCY f (GHz) INPUT POWER Pi, (d8m) Po, IM; vs. Pi, Vos=10V a Ips=2.8 A Pout vi f=6.4GHz E Af=10MHz z 2-tone test ao o a is 2 3 2 a fb 2D a E 2 oO 7 19C INPUT POWER Pin (dBm) S.C.L. S PARAMETERS (ta=esc, Vps=10V, Ing =2.4A) S Parameters (TYP.) t Si Sai Si2 S22 (GHz) Magn. ] Angle (deg.) Magn. Angle (deg.) Magn. Angle (deg.} Magn. Angle :deg.) 5.9 0.40 170.9 3.59 34.3 0.071 24.8 0.32 134.4 6.0 0.41 140.3 3.55 6.5 0.072 65.4 0.31 171.2 6.1 0.40 92.6 3.47 47.4 0.073 106.6 0.29 155.1 6.2 0.39 41.3 3.35 88.0 0.073 147.2 0.26 123.6 6.3 0.40 ~ 15.4 3.24 ~129.5 0.073 171.2 0.21 95.4 6.4 0.44 76.5 3.09 173.5 0.071 127.6 0.14 77.0 562 ate MTSE