© Semiconductor Components Industries, LLC, 2017
July, 2019 − Rev. 1
1Publication Order Number:
NSVJ6904DSB6/D
N-Channel JFET
−25 V, 20 to 40 mA, 40 mS, Dual
NSVJ6904DSB6
The NSVJ6904DSB6 is a composite type of JFET designed for
compact size and high efficiency which can achieve high gain
performance. This AEC−Q101 qualified and PPAP capable device is
suited for automotive applications.
Features
•Large | yfs |
•Small Ciss
•Ultralow Noise Figure
•CPH6 Package is Pin−Compatible with SC−74
•AEC−Q101 Qualified and PPAP Capable
•Mounting Area is Greatly Reduced by Incorporating Two JFETs of
the NSVJ3910SB3 in One Package of CPH6 Compared with Using
Two Separate Packages
Typical Applications
•AM Tuner RF Amplification
•Low Noise Amplifier
Specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbo
lValue Unit
Drain to Source Voltage VDSX 25 V
Gate to Drain Voltage VGDS −25 V
Gate Current IG10 mA
Drain Current ID50 mA
Allowable Power Dissipation 1 unit PD400 mW
Total Power Dissipation PT700 mW
Operating Junction and Storage Temperature TJ, TStg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING
DIAGRAM
www.onsemi.com
See detailed ordering, marking and shipping information in the
package dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
1 : Drain 1
2 : NC
3 : Drain 2
4 : Gate 2
5 : Source 1 / Source 2
6 : Gate 1
ELECTRICAL CONNECTION
N−Channel
CASE 318BD
CPH6
1P
LOT No
2
13
5
64
123
654
NSVJ6904DSB6
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C, (Note 1))
Characteristic Symbol Conditions Min Typ Max Unit
Gate to Drain Breakdown Voltage V(BR)GDS IG = −10 mA, VDS = 0 V −25 − − V
Gate to Source Leakage Current IGSS VGS = −10 V, VDS = 0 V − − −1.0 nA
Cutoff Voltage VGS(off) VDS = 5 V, ID = 100 mA−0.6 −1.2 −1.8 V
Zero−Gate Voltage Drain Current IDSS VDS = 5 V, VGS = 0 V 20 −40 mA
Forward Transfer Admittance | yfs | VDS = 5 V, VGS = 0 V, f = 1 kHz 30 40 −mS
Input Capacitance Ciss VDS = 5 V, VGS = 0 V, f = 1 MHz −6.0 −pF
Reverse Transfer Capacitance Crss −2.3 −pF
Noise Figure NF VDS = 5 V, VGS = 0 V, f = 100 MHz −2.1 2.8 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. The specifications shown above are for each individual JFET.
NSVJ6904DSB6
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3
CHARACTERISTICS
0
10
15
20
25
30
5
1.0 23 57
10 23 57
100
0 2.01.0 1.50.5
VGS = 0 V
−0.2 V
−0.4 V
−0.6 V
−0.8 V
VGS = 0 V
−0.2 V
−0.4 V
−0.6 V
−0.8 V
−1.0 V
−1.0 V
Figure 1. ID − VDS
DRAIN−TO−SOURCE VOLTAGE, VDS − V
DRAIN CURRENT, ID − mA
Figure 2. ID − VDS
DRAIN−TO−SOURCE VOLTAGE, VDS − V
DRAIN CURRENT, ID − mA
0
10
15
20
25
30
5
35
40
0246810
Figure 3. ID − VGS
GATE−TO−SOURCE VOLTAGE, VGS − V
DRAIN CURRENT, ID − mA
Figure 4. ID − VGS
GATE−TO−SOURCE VOLTAGE, VGS − V
DRAIN CURRENT, ID − mA
0
10
15
20
25
30
5
35
40
45
50
0
10
15
20
25
30
5
35
40
45
50
−2.0 0.5−1.0 −0.5−1.5 0−2.0 0.5−1.0 −0.5−1.5 0
VDS = 5 V VDS = 5 V
Ta = −25°C
75°C
25°C
30 mA
20 mA
IDSS = 40 mA
Figure 5. | yfs | − ID
DRAIN CURRENT, ID − mA
FORWARD TRANSFER ADMITTANCE, | yfs | − mS
Figure 6. | yfs | − IDSS
DRAIN CURRENT, IDSS − mA
FORWARD TRANSFER ADMITTANCE, | yfs | − mS
VDS = 5 V
f = 1 kHz
IDSS = 30 mA
VDS = 5 V
VGS = 0 V
f = 1 kHz
1.0
3
5
7
10
2
2
3
5
7
100
10 23 57
100
10
2
3
5
7
100
NSVJ6904DSB6
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4
CHARACTERISTICS
Figure 7. VGS(off) − IDSS
DRAIN CURRENT, IDSS − mA
CUTOFF VOLTAGE, VGS(off) − V
Figure 8. Ciss − VGDS
DRAIN−TO−SOURCE VOLTAGE, VDS − V
INPUT CAPACITANCE, Ciss − pF
VDS = 5 V
ID = 100 mA
VGS = 0 V
f = 1 MHz
10 23 57
100
0.1
3
5
7
1.0
2
2
3
5
7
10
1.0
2
3
5
7
10
1.0 23 57
10 23 57
100
Figure 9. Crss − VDS
DRAIN−TO−SOURCE VOLTAGE, VDS − V
REVERSE TRANSFER CAPACITANCE, Crss − pF
Figure 10. PD, PT − Ta
AMBIENT TEMPERATURE, Ta − °C
ALLOWABLE POWER DISSIPATION, PD, PT− mW
VGS = 0 V
f = 1 MHz PT
1 unit
20 40 60 80 100 120 140 160
0
100
200
300
400
500
600
700
800
0
1.0
2
3
5
7
10
1.0 23 57
10 23 57
100
ORDERING INFORMATION
Device Order Number Specific Device Marking Package Type Shipping
†
NSVJ6904DSB6T1G 1P CPH6
(Pb−Free / Halogen Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
CPH6
CASE 318BD
ISSUE O
DATE 30 NOV 2011
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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CPH6
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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