2SJ181(L)/(S) - Hitachi Semiconductor

2SJ181(L), 2SJ181(S)

Silicon P-Channel MOS FET

ADE-208-1183 (Z)

1st. Edition

Mar. 2001

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

123

DPAK-1

1. Gate

2. Drain

3. Source

4. Drain

2SJ181(L), 2SJ181(S)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS –600 V

Gate to source voltage VGSS ±15 V

Drain current ID–0.5 A

Drain peak current ID(pulse)*1–1.0 A

Body to drain diode reverse drain current IDR –0.5 A

Channel dissipation Pch*220 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW 10 µs, duty cycle 1%

2. Value at TC = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

voltage V(BR)DSS –600 — — V ID = –10 mA, VGS = 0

Gate to source breakdown

voltage V(BR)GSS ±15 — — V IG = ±100 µA, VDS = 0

Gate to source leak current IGSS — — ±10 µA VGS = ±12 V, VDS = 0

Zero gate voltage drain current IDSS — — –100 µA VDS = –500 V, VGS = 0

Gate to source cutoff voltage VGS(off) –2.0 — –4.0 V ID = –1 mA, VDS = –10 V

Static drain to source on state

resistance RDS(on) —1525 I

= –0.3 A, VGS = –10 V*1

Forward transfer admittance |yfs| 0.3 0.45 — S ID = –0.3 A, VDS = –20 V*1

Input capacitance Ciss — 220 — pF VDS = –10 V, VGS = 0,

Output capacitance Coss — 55 — pF f = 1 MHz

Reverse transfer capacitance Crss — 13 — pF

Turn-on delay time td(on) —7 —nsI

= –0.3 A, VGS = –10 V,

Rise time tr— 20 — ns RL = 100

Turn-off delay time td(off) —35—ns

Fall time tf—35—ns

Body to drain diode forward

voltage VDF — –0.85 — V IF = –0.5 A, VGS = 0

Body to drain diode reverse

recovery time trr — 230 — ns IF = –0.5 A, VGS = 0,

diF/dt = 50 A/µs

Note: 1. Pulse test

2SJ181(L), 2SJ181(S)

Channel Dissipation Pch (W)

50 100 150 200

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

Drain Current I (A)

Maximum Safe Operation Area

–10 –20 –50 –100 –200 –500 –1000

–10

–3

–1

–0.3

–0.1

–0.03

–0.01

Operation in

this area is

limited by RDS(on)

Ta = 25 °C

10 µs

DC Operation (Tc = 25 °C)

1 ms

100 µs

PW = 10 ms (1shot)

–1.0

–0.8

–0.6

–0.4

–0.2

0Drain to Source Voltage V (V)

Drain Current I (A)

Typical Output Characteristics

–10 –20 –30 –40 –50

–10 V

–5 V

Pulse Test

V = –4 V

–4.5 V

–6 V

–0.5

–0.4

–0.3

–0.2

–0.1

0Gate to Source Voltage V (V)

Drain Current I (A)

Typical Transfer Characteristics

–2 –4 –6 –8 –10

Tc = –25 °C

75 °C 25 °C

V = –20 V

Pulse Test

2SJ181(L), 2SJ181(S)

–20

–16

–12

–8

–4

0 –4 –8 12 –16 –20

Gate to Source Voltage V (V)

Pulse Test

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

–0.1 A

–0.2 A

I = –0.5 A

Drain Current I (A)

Drain to Source On State Resistance

R ( )Ω

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

500

200

100

–0.02 –0.05 –0.1 –0.2 –0.5 –1 –2

–15 V

V = –10 V

Pulse Test

–40 0 40 80 120 160

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

Ω

Static Drain to Source on State Resistance

vs. Temperature

Pulse Test

V = –10 V

–0.1 A

–0.2 A

I = –0.5 A

2SJ181(L), 2SJ181(S)

Drain Current I (A)

Forward Transfer Admittance |y | (S)

Forward Transfer Admittance vs.

Drain Current

0.2

0.5

0.1

0.02

0.05

–0.05 –0.1 –0.2 –0.5 –1 –2 –5

V = –20 V

Pulse Test

Tc = –25 °C

75 °C

25 °C

Reverse Drain Current I (A)

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

1000

200

500

100

–0.05 –0.1 –0.2 –0.5 –1 –2 –5

di / dt = 100 A / µs

V = 0, Ta = 25 °C

0 –10 –20 –30 -40 –50

Capacitance C (pF)

Drain to Source Voltage V (V)

Typical Capacitance vs.

Drain to Source Voltage

Ciss

Coss

Crss

V = 0

f = 1 MHz

1000

300

100

2SJ181(L), 2SJ181(S)

–200

–400

–600

–800

0Gate Charge Qg (nc)

Drain to Source Voltage V (V)

–4

–8

–12

–16

–20–1000

Gate to Source Voltage V (V)

Dynamic Input Characteristics

4 8 12 16 20

I = –0.5 A

V = –100 V

–250 V

–400 V

V = –100 V

–250 V

–400 V

500

200

100

Drain Current I (A)

Switching Time t (ns)

Switching Characteristics

–0.05 –0.1 –0.2 –0.5 –1 –2 –5

d(off)

d(on)

V = –10 V, V = –30 V

PW = 5 µs, duty < 1 %

GS DD

2SJ181(L), 2SJ181(S)

–1.0

–0.8

–0.6

–0.4

–0.2

Source to Drain Voltage V (V)

Pulse Test

0, 5 V

Reverse Drain Current I (A)

Reverse Drain Current vs.

Source to Drain Voltage

–0.2 –0.4 –0.6 –0.8 –1.0

V = –10 V

0.3

0.1

0.03

0.01

10 µ 100 µ 1 m 10 m

Pulse Width PW (S)

Normalized Transient Thermal Impedance

100 m 1 10

s (t)

D = PW

ch – c(t) = s (t) • ch – c

ch – c = 6.25 °C/W, Tc = 25 °C

θ γ θ

D = 1

0.5

0.2

0.01

0.02

0.1

0.05

1 shot Pulse

Tc = 25°C

Normalized Transient Thermal Impedance vs. Pulse Width

2SJ181(L), 2SJ181(S)

Vin Monitor

D.U.T.

Vin

–10 V

= –30 V

td(on)

Vin

90% 90%

10%

Vout

td(off)

Vout

Monitor

50Ω

90%

10%

Switching Time Test Circuit Waveforms

2SJ181(L), 2SJ181(S)

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (L)-(1)

—

Conforms

0.42 g

6.5 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

1.2 ± 0.3

0.55 ± 0.1

5.5 ± 0.5 1.7 ± 0.5

16.2 ± 0.5

3.1 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

2.29 ± 0.5 2.29 ± 0.5

0.8 ± 0.1

As of January, 2001

Unit: mm

2SJ181(L), 2SJ181(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (S)-(1),(2)

—

Conforms

0.28 g

As of January, 2001

Unit: mm

6.5 ± 0.5

5.4 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

0 – 0.25

0.55 ± 0.1

1.7 ± 0.5

5.5 ± 0.5

2.5 ± 0.5

1.15 ± 0.1

0.8 ± 0.1

2.29 ± 0.5

1.2 Max

(4.9)

(5.3)

2SJ181(L), 2SJ181(S)

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation

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